KR20090037277A - 크로스 포인트 메모리 어레이 - Google Patents

크로스 포인트 메모리 어레이 Download PDF

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Publication number
KR20090037277A
KR20090037277A KR1020080020588A KR20080020588A KR20090037277A KR 20090037277 A KR20090037277 A KR 20090037277A KR 1020080020588 A KR1020080020588 A KR 1020080020588A KR 20080020588 A KR20080020588 A KR 20080020588A KR 20090037277 A KR20090037277 A KR 20090037277A
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KR
South Korea
Prior art keywords
electrode
conductive layer
oxide
electrode line
memory
Prior art date
Application number
KR1020080020588A
Other languages
English (en)
Korean (ko)
Inventor
이창범
박영수
이명재
스테파노비치 겐리치
김기환
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to US12/155,511 priority Critical patent/US20090095985A1/en
Priority to CN2008101297804A priority patent/CN101409303B/zh
Priority to JP2008220184A priority patent/JP2009094483A/ja
Priority to EP08163599A priority patent/EP2048713A3/en
Publication of KR20090037277A publication Critical patent/KR20090037277A/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
KR1020080020588A 2007-10-10 2008-03-05 크로스 포인트 메모리 어레이 KR20090037277A (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US12/155,511 US20090095985A1 (en) 2007-10-10 2008-06-05 Multi-layer electrode, cross point memory array and method of manufacturing the same
CN2008101297804A CN101409303B (zh) 2007-10-10 2008-08-18 多层电极、交叉点存储器阵列
JP2008220184A JP2009094483A (ja) 2007-10-10 2008-08-28 クロスポイントメモリアレイ
EP08163599A EP2048713A3 (en) 2007-10-10 2008-09-03 Multi-layer electrode, cross point memory array and method of manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20070102146 2007-10-10
KR1020070102146 2007-10-10

Publications (1)

Publication Number Publication Date
KR20090037277A true KR20090037277A (ko) 2009-04-15

Family

ID=40572200

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080020588A KR20090037277A (ko) 2007-10-10 2008-03-05 크로스 포인트 메모리 어레이

Country Status (2)

Country Link
KR (1) KR20090037277A (zh)
CN (1) CN101409303B (zh)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011096940A1 (en) * 2010-02-08 2011-08-11 Hewlett-Packard Development Company, L.P. Memory resistor having multi-layer electrodes
KR20130077514A (ko) * 2011-12-29 2013-07-09 에스케이하이닉스 주식회사 가변 저항 메모리 장치
KR101340570B1 (ko) * 2011-12-23 2013-12-11 광주과학기술원 비휘발성 저항 스위칭 메모리 소자 및 이의 제조방법
KR101423930B1 (ko) * 2012-04-17 2014-07-28 광주과학기술원 문턱 스위칭과 메모리 스위칭 특성을 동시에 갖는 저항 변화 메모리 소자, 이의 제조방법, 및 이를 포함하는 저항 변화 메모리 소자 어레이

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102484128B (zh) * 2009-09-04 2016-08-03 惠普发展公司，有限责任合伙企业 具有用电压相关电阻器形成的本征二极管的可开关结
US20110084248A1 (en) * 2009-10-13 2011-04-14 Nanya Technology Corporation Cross point memory array devices
KR20110054088A (ko) * 2009-11-17 2011-05-25 삼성전자주식회사 비휘발성 메모리 소자
CN102779941B (zh) * 2012-08-22 2015-02-18 中国科学院上海微系统与信息技术研究所 低功耗相变存储单元及其制备方法
TWI568042B (zh) * 2015-08-03 2017-01-21 華邦電子股份有限公司 電阻式隨機存取記憶體
US20170133588A1 (en) * 2015-11-06 2017-05-11 HGST Netherlands B.V. Resistive ram cell with focused electric field
KR102410947B1 (ko) * 2015-11-20 2022-06-22 에스케이하이닉스 주식회사 문턱 스위칭 장치 및 이를 포함하는 전자 장치
US11916127B2 (en) * 2021-06-16 2024-02-27 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-layer electrode to improve performance of ferroelectric memory device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070132049A1 (en) * 2005-12-12 2007-06-14 Stipe Barry C Unipolar resistance random access memory (RRAM) device and vertically stacked architecture

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011096940A1 (en) * 2010-02-08 2011-08-11 Hewlett-Packard Development Company, L.P. Memory resistor having multi-layer electrodes
US8737113B2 (en) 2010-02-08 2014-05-27 Hewlett-Packard Development Company, L.P. Memory resistor having multi-layer electrodes
KR101340570B1 (ko) * 2011-12-23 2013-12-11 광주과학기술원 비휘발성 저항 스위칭 메모리 소자 및 이의 제조방법
KR20130077514A (ko) * 2011-12-29 2013-07-09 에스케이하이닉스 주식회사 가변 저항 메모리 장치
KR101423930B1 (ko) * 2012-04-17 2014-07-28 광주과학기술원 문턱 스위칭과 메모리 스위칭 특성을 동시에 갖는 저항 변화 메모리 소자, 이의 제조방법, 및 이를 포함하는 저항 변화 메모리 소자 어레이

Also Published As

Publication number Publication date
CN101409303A (zh) 2009-04-15
CN101409303B (zh) 2013-01-30

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