KR20090028581A - 박막 광기전 구조 및 그 제조 방법 - Google Patents
박막 광기전 구조 및 그 제조 방법 Download PDFInfo
- Publication number
- KR20090028581A KR20090028581A KR1020087032241A KR20087032241A KR20090028581A KR 20090028581 A KR20090028581 A KR 20090028581A KR 1020087032241 A KR1020087032241 A KR 1020087032241A KR 20087032241 A KR20087032241 A KR 20087032241A KR 20090028581 A KR20090028581 A KR 20090028581A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- semiconductor wafer
- photovoltaic
- release layer
- donor
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000010409 thin film Substances 0.000 title description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 217
- 238000000034 method Methods 0.000 claims abstract description 143
- 239000000758 substrate Substances 0.000 claims abstract description 143
- 238000004299 exfoliation Methods 0.000 claims abstract description 41
- 239000013078 crystal Substances 0.000 claims abstract description 36
- 239000012212 insulator Substances 0.000 claims abstract description 21
- 230000008569 process Effects 0.000 claims description 65
- 239000000463 material Substances 0.000 claims description 57
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 53
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 49
- 229910052710 silicon Inorganic materials 0.000 claims description 40
- 229910052732 germanium Inorganic materials 0.000 claims description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 33
- 239000010703 silicon Substances 0.000 claims description 33
- 238000007730 finishing process Methods 0.000 claims description 32
- 150000002500 ions Chemical class 0.000 claims description 31
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 28
- 238000005468 ion implantation Methods 0.000 claims description 26
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 17
- 238000005498 polishing Methods 0.000 claims description 14
- 239000011787 zinc oxide Substances 0.000 claims description 10
- 238000000407 epitaxy Methods 0.000 claims description 9
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 7
- 238000005868 electrolysis reaction Methods 0.000 claims description 7
- 230000005012 migration Effects 0.000 claims description 7
- 238000013508 migration Methods 0.000 claims description 7
- 230000032258 transport Effects 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 238000012545 processing Methods 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 239000002041 carbon nanotube Substances 0.000 claims description 5
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 5
- 229910003437 indium oxide Inorganic materials 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 5
- 238000012546 transfer Methods 0.000 claims description 5
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 4
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 230000037427 ion transport Effects 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 4
- 229910052787 antimony Inorganic materials 0.000 claims 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 4
- 229910052733 gallium Inorganic materials 0.000 claims 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 4
- 229910052737 gold Inorganic materials 0.000 claims 4
- 239000010931 gold Substances 0.000 claims 4
- 229910052738 indium Inorganic materials 0.000 claims 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 4
- 239000007769 metal material Substances 0.000 claims 4
- 229910052750 molybdenum Inorganic materials 0.000 claims 4
- 239000011733 molybdenum Substances 0.000 claims 4
- 229910052759 nickel Inorganic materials 0.000 claims 4
- 229910052763 palladium Inorganic materials 0.000 claims 4
- 229910052697 platinum Inorganic materials 0.000 claims 4
- 229910052709 silver Inorganic materials 0.000 claims 4
- 239000004332 silver Substances 0.000 claims 4
- 229910052718 tin Inorganic materials 0.000 claims 4
- 229910052719 titanium Inorganic materials 0.000 claims 4
- 239000010936 titanium Substances 0.000 claims 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 4
- 229910052721 tungsten Inorganic materials 0.000 claims 4
- 239000010937 tungsten Substances 0.000 claims 4
- 238000009740 moulding (composite fabrication) Methods 0.000 claims 2
- 238000003825 pressing Methods 0.000 claims 2
- 239000010410 layer Substances 0.000 description 235
- 235000012431 wafers Nutrition 0.000 description 103
- 239000011521 glass Substances 0.000 description 85
- 239000010408 film Substances 0.000 description 27
- 239000002241 glass-ceramic Substances 0.000 description 26
- 230000008859 change Effects 0.000 description 13
- 230000008901 benefit Effects 0.000 description 12
- 238000000151 deposition Methods 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
- 239000003513 alkali Substances 0.000 description 9
- 230000007547 defect Effects 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 238000000926 separation method Methods 0.000 description 8
- 230000009471 action Effects 0.000 description 7
- 150000001768 cations Chemical class 0.000 description 7
- 239000000075 oxide glass Substances 0.000 description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 6
- -1 oxygen ions Chemical class 0.000 description 6
- 230000001976 improved effect Effects 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 3
- 229910021334 nickel silicide Inorganic materials 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000010924 continuous production Methods 0.000 description 2
- 239000006059 cover glass Substances 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 241000710179 Potato virus S Species 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000005407 aluminoborosilicate glass Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000003416 augmentation Effects 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 208000018375 cerebral sinovenous thrombosis Diseases 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005328 electron beam physical vapour deposition Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229920006268 silicone film Polymers 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000008093 supporting effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 229910021352 titanium disilicide Inorganic materials 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
- C03C27/02—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing by fusing glass directly to metal
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
- C03C27/06—Joining glass to glass by processes other than fusing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Ceramic Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US81006106P | 2006-05-31 | 2006-05-31 | |
| US60/810,061 | 2006-05-31 | ||
| US11/511,041 US20070277875A1 (en) | 2006-05-31 | 2006-08-28 | Thin film photovoltaic structure |
| US11/511,040 | 2006-08-28 | ||
| US11/511,041 | 2006-08-28 | ||
| US11/511,040 US20070277874A1 (en) | 2006-05-31 | 2006-08-28 | Thin film photovoltaic structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20090028581A true KR20090028581A (ko) | 2009-03-18 |
Family
ID=38801981
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020087032241A KR20090028581A (ko) | 2006-05-31 | 2007-05-24 | 박막 광기전 구조 및 그 제조 방법 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP2022097A2 (fr) |
| JP (1) | JP2009539255A (fr) |
| KR (1) | KR20090028581A (fr) |
| TW (1) | TW200814341A (fr) |
| WO (1) | WO2007142865A2 (fr) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080070340A1 (en) * | 2006-09-14 | 2008-03-20 | Nicholas Francis Borrelli | Image sensor using thin-film SOI |
| EP2075850A3 (fr) * | 2007-12-28 | 2011-08-24 | Semiconductor Energy Laboratory Co, Ltd. | Dispositif de conversion photoélectrique et son procédé de fabrication |
| US7967936B2 (en) | 2008-12-15 | 2011-06-28 | Twin Creeks Technologies, Inc. | Methods of transferring a lamina to a receiver element |
| WO2010108151A1 (fr) * | 2009-03-20 | 2010-09-23 | Solar Implant Technologies, Inc. | Procédé de fabrication de pile solaire cristalline avancée à haute efficacité |
| US20100244108A1 (en) * | 2009-03-31 | 2010-09-30 | Glenn Eric Kohnke | Cmos image sensor on a semiconductor-on-insulator substrate and process for making same |
| TW201119019A (en) * | 2009-04-30 | 2011-06-01 | Corning Inc | CMOS image sensor on stacked semiconductor-on-insulator substrate and process for making same |
| US8749053B2 (en) | 2009-06-23 | 2014-06-10 | Intevac, Inc. | Plasma grid implant system for use in solar cell fabrications |
| CN103597614B (zh) * | 2011-06-15 | 2017-03-01 | 3M创新有限公司 | 具有改善的转换效率的太阳能电池 |
| EP2777069A4 (fr) | 2011-11-08 | 2015-01-14 | Intevac Inc | Système et procédé de traitement de substrat |
| MY178951A (en) | 2012-12-19 | 2020-10-23 | Intevac Inc | Grid for plasma ion implant |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4152535A (en) * | 1976-07-06 | 1979-05-01 | The Boeing Company | Continuous process for fabricating solar cells and the product produced thereby |
| US5395481A (en) * | 1993-10-18 | 1995-03-07 | Regents Of The University Of California | Method for forming silicon on a glass substrate |
| JPH114008A (ja) * | 1997-06-11 | 1999-01-06 | Nippon Telegr & Teleph Corp <Ntt> | 薄膜太陽電池の製造方法 |
| US6306729B1 (en) * | 1997-12-26 | 2001-10-23 | Canon Kabushiki Kaisha | Semiconductor article and method of manufacturing the same |
| JP2000349264A (ja) * | 1998-12-04 | 2000-12-15 | Canon Inc | 半導体ウエハの製造方法、使用方法および利用方法 |
| US7176528B2 (en) * | 2003-02-18 | 2007-02-13 | Corning Incorporated | Glass-based SOI structures |
| JP4115859B2 (ja) * | 2003-02-28 | 2008-07-09 | 株式会社日立製作所 | 陽極接合方法および電子装置 |
| US7410883B2 (en) * | 2005-04-13 | 2008-08-12 | Corning Incorporated | Glass-based semiconductor on insulator structures and methods of making same |
-
2007
- 2007-05-24 EP EP07809181A patent/EP2022097A2/fr not_active Withdrawn
- 2007-05-24 KR KR1020087032241A patent/KR20090028581A/ko not_active Application Discontinuation
- 2007-05-24 WO PCT/US2007/012422 patent/WO2007142865A2/fr active Application Filing
- 2007-05-24 JP JP2009513192A patent/JP2009539255A/ja not_active Abandoned
- 2007-05-29 TW TW096119237A patent/TW200814341A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TW200814341A (en) | 2008-03-16 |
| EP2022097A2 (fr) | 2009-02-11 |
| WO2007142865A3 (fr) | 2008-05-08 |
| JP2009539255A (ja) | 2009-11-12 |
| WO2007142865A2 (fr) | 2007-12-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20070277874A1 (en) | Thin film photovoltaic structure | |
| US20070277875A1 (en) | Thin film photovoltaic structure | |
| KR20090028581A (ko) | 박막 광기전 구조 및 그 제조 방법 | |
| US10374120B2 (en) | High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials | |
| US9837571B2 (en) | Tandem nanofilm photovoltaic cells joined by wafer bonding | |
| KR102361057B1 (ko) | 전력 및 rf 애플리케이션을 위한 가공된 기판 구조체 | |
| KR101362688B1 (ko) | 광전 변환 장치 및 그 제조 방법 | |
| US7846759B2 (en) | Multi-junction solar cells and methods of making same using layer transfer and bonding techniques | |
| US7964431B2 (en) | Method to make electrical contact to a bonded face of a photovoltaic cell | |
| US20090194152A1 (en) | Thin-film solar cell having hetero-junction of semiconductor and method for fabricating the same | |
| EP2399300B1 (fr) | Procede de formation d'une cellule photovoltaique | |
| EP1981092B1 (fr) | Procédé de fabrication d'une cellule solaire en silicium monocristallin | |
| US20100112784A1 (en) | Large area semiconductor on glass insulator | |
| KR20080109711A (ko) | 광전 변환 소자용 기판의 제조 방법 | |
| KR19980064201A (ko) | 반도체 부재의 제조방법 | |
| TW201340351A (zh) | 具有寬能帶間隙半導體材料之射極區的太陽能電池 | |
| EP2751846A1 (fr) | Cellule solaire | |
| CN101467245A (zh) | 薄膜光伏结构及其制造 | |
| EP2831928A1 (fr) | Fabrication de dispositifs de cellule solaire multi-jonctions | |
| Marti et al. | Wafer-bonding and film transfer for advanced PV cells C Jaussaud, E Jalaguier and D Mencaraglia | |
| Jaussaud et al. | Wafer bonding and film transfer for advanced PV cells | |
| KR20130143100A (ko) | 얇은 반도체 라미나 상에 지지 요소를 구성함으로써 장치를 형성하는 방법 | |
| WO2013143852A1 (fr) | Fabrication de dispositifs de cellule solaire multi-jonctions | |
| WO2011056090A1 (fr) | Substrat pour cellules solaires en cascade |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |