WO2011056090A1 - Substrat pour cellules solaires en cascade - Google Patents

Substrat pour cellules solaires en cascade Download PDF

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Publication number
WO2011056090A1
WO2011056090A1 PCT/RU2010/000533 RU2010000533W WO2011056090A1 WO 2011056090 A1 WO2011056090 A1 WO 2011056090A1 RU 2010000533 W RU2010000533 W RU 2010000533W WO 2011056090 A1 WO2011056090 A1 WO 2011056090A1
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WO
WIPO (PCT)
Prior art keywords
substrate
germanium
stripes
film
width
Prior art date
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PCT/RU2010/000533
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English (en)
Inventor
Evgeny Invievich Givargizov
Mikhail Evgenievich Givargizov
Original Assignee
Evgeny Invievich Givargizov
Mikhail Evgenievich Givargizov
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Application filed by Evgeny Invievich Givargizov, Mikhail Evgenievich Givargizov filed Critical Evgeny Invievich Givargizov
Publication of WO2011056090A1 publication Critical patent/WO2011056090A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/1808—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table including only Ge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Definitions

  • the invention relates to materials science, preferentially to electronic materials, in particular to solar energetic.
  • the most simple version of the PSC is the p-n junction in silicon.
  • the silicon solar cells (SSC) have the efficiency -15%, and the value can not be larger because SSC are based on the only p-n junction.
  • a 3 B 5 compounds e.g., gallium arsenide and related ones
  • a B compounds e.g., ZnSe and related ones
  • the entrant, in respect to the solar light, semiconductor layer must have the largest forbidden energy gap.
  • a remarkable feature of the families of the semiconductor compounds consists in the fact that the compounds have various energy gaps, the compounds overlap almost all the solar spectrum, whereas the crystal lattices of the compounds in the families differ insignificantly so that it is possible to realize their rather perfect epitaxial growth.
  • the Ge substrate represents a crucial factor because Ge is a rare chemical element in the Earth crust. On this reason, it is rather expensive. However, the high price is not the only problem. The situation becomes far more complicated when a mass solar energetic is developed that takes place currently. The resource limit is considered as a threatening circumstance.
  • the US germanium reservoir is estimated to last for 25 years at the current consumption. An anxiety on this is expressed in (S.Kurtz, "Opportunities and Challenges for Development of a Mature Concentrating Photovoltaic Power Industry", Technical Report NRLE, Sept. 2008, 19pp).
  • the price of Ge substrate in the international market is l$/cm 2 .
  • the Ge wafer was thinned down to 200 ⁇ from the initial circa 500-1000 ⁇ (the solar cells were intended for using in cosmos, e.g., in feeding the cosmic station: there the weight of the PSC is decreased maximally).
  • the initial Ge wafer should be more thick, e.g., 500 ⁇ in any case: when it must be thinned (for using in cosmos) or it is necessary for terrestrial applications when the weight problem is absent.
  • the layer can be formed by chemical vapor deposition at decomposition of Ge compound that can be obtained by a treatment of germanium raw material:
  • the Ge film 5 ⁇ in thickness was deposited on wafers of polycrystalline alumina, fused quartz, or polycrystalline Si from vapor phase and then underwent to annealing during 10-30 min at high temperatures, 800-950°C (in order to anneal the Ge film above 940°C, the melting point of Ge; the Ge film was coated by a layer of refractory material, such as tungsten or Si0 2 ).
  • refractory material such as tungsten or Si0 2
  • the design of Ge film that has not such failures is proposed.
  • the substrate proposed for PSC allows to decrease significantly its price.
  • the design proposed can be created by techniques known in modern microelectronics.
  • the substrate for cascade solar cells is formed as single crystalline germanium film with thickness no more than 5 ⁇ on a basic insulator wafer.
  • the Ge film has a striated form where uncoated substrate areas (clearances) take less than 5% of general substrate area, the width of the clearances being less than 5 ⁇ .
  • the germanium stripes have the form of rectangulars; perpendicularly to them rectangular electrocontact platforms with width equal to the width of the germanium stripes are deposited, the distances between the platforms at least ten times exceeding the width of the stripes.
  • the electrocontact platforms are passed either on lower surface of the stripes (between the germanium film and the initial basic insulator wafer), or on upper surface of the stripes.
  • the single crystalline germanium film is created by deposition on the basic wafers and subsequent recrystallization.
  • Fig. 1 A scheme of cascade PSC with triple p-n junction on basis of germanium substrate according to M.Yamaguchi, "Multi-junction solar cells and novel structures for solar cell applications” Physica E14 (2002) 84-90.
  • Fig. 2 A scheme of cascade PSC with triple p-n junction on basis of germanium substrate according to Zh.I.Alferov, V.M.Andreev, V.D.Rumyantsev, "Trends and perspectives for developments of solar energetics", Physics and Technique of Semiconductors, 38 (2004) 937-947.
  • Fig. 3. A scheme of stripe germanium film according to the given invention (view from above);
  • Fig. 5 Structure of germanium stripes in gross-section. Flat p-n junctions are parallel to the initial silicon wafer. Electrical contact platforms are parallel to p-n junctions.
  • the germanium film less than 5 micrometers in thickness is deposited on a cheap substrate, e.g. silicon wafer with the crystallographic orientation (100) or (1 11) (or on a polycrystalline silicon wafer) 0.3-0.5 mm in thickness.
  • the silicon wafer is preliminary thermally coated by Si0 2 film 0.3-0.5 in thickness.
  • the deposition of the germanium film can be done by various techniques, e.g., by chemical vapor deposition (CVD), by evaporation I vacuum, by magnetron sputtering, etc.
  • the germanium film is underwent to directional recrystallization that resulted in formation of well-oriented single-crystalline film.
  • a central part of the rectangular stripes represents an ideally perfect single crystal.
  • FIG. 3 view from above
  • Fig.4 cross-section of the stripe germanium film
  • an epitaxial layer of the semiconductor compound A B or a relative compound of the same family is deposited on the germanium film.
  • the material must have more broad forbidden gap than germanium.
  • one more layer of a semiconductor A 3 B 5 compound with more broad forbidden gap than the previous layer is deposited, again epitaxially.
  • epitaxial layer of semiconductor compound A 2 B 6 e.g., zinc selenide ZnSe that is isoelectronic to gallium arsenide is deposited on all the previous layers.
  • This material has a broad forbidden gap, about 3.2 eV.
  • a layer of ZnO is deposited as the A 2 B 6 compound, also above the ZnSe layer. The material has forbidden gap 3.37 eV so that it is able to absorb sun light of near ultraviolet spectrum.
  • the multilayered epitaxial formed on the basis of the germanium substrate is able to absorb almost all the sun light that fall on the Earth.
  • the layers of the semiconductor compounds A3B5 and A2B6 can be deposited by any known techniques: molecular-beam epitaxy (MBE), chemical vapor deposition (CVD), from mixtures of metal-organic compounds (MOCVD), liquid epitaxy, by magnetron sputtering etc.
  • MBE molecular-beam epitaxy
  • CVD chemical vapor deposition
  • MOCVD metal-organic compounds
  • liquid epitaxy by magnetron sputtering etc.
  • the electric contact with the germanium is created as a thin film of refractory metal, e.g., molybdenum or tungsten.
  • refractory metal e.g., molybdenum or tungsten.
  • zinc selenide or zinc oxide
  • the generated voltage can be taken also by the contacts attached to several semiconductor layers. In such a way more efficient taking the voltages appeared on various areas of PSC can be realized.
  • FIG. 5 A total cross-section of the formed PSC, including the initial silicon wafer, electrical structure of the grown epitaxial structures and contact areas are shown in Fig. 5.

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention concerne un substrat en germanium destiné au dépôt par épitaxie de composés semiconducteurs A3B5 et A2B6 pour cellules solaires multi-‌jonctions, ledit substrat étant préparé sous la forme d'un film monocristallin dont l'épaisseur ne dépasse pas 5 micromètres. Le film se présente sous la forme de rectangles où des zones de substrat non revêtu (dégagements) n'occupent pas plus de 5% de la surface totale du substrat, la largeur des dégagements étant inférieure à 5 micromètres. Le film est mis en œuvre par dépôt suivi d'une recristallisation.
PCT/RU2010/000533 2009-11-06 2010-09-27 Substrat pour cellules solaires en cascade WO2011056090A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU2009140907/28A RU2449421C2 (ru) 2009-11-06 2009-11-06 Подложка для каскадных солнечных элементов
RU2009140907 2009-11-06

Publications (1)

Publication Number Publication Date
WO2011056090A1 true WO2011056090A1 (fr) 2011-05-12

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PCT/RU2010/000533 WO2011056090A1 (fr) 2009-11-06 2010-09-27 Substrat pour cellules solaires en cascade

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WO (1) WO2011056090A1 (fr)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4370510A (en) * 1980-09-26 1983-01-25 California Institute Of Technology Gallium arsenide single crystal solar cell structure and method of making
DE10205618A1 (de) * 2002-02-11 2003-08-28 Daimler Chrysler Ag Silizium-Germanium Solarzelle mit hohem Wirkungsgrad und Verfahren zu deren Herstellung
US6670544B2 (en) * 2000-12-08 2003-12-30 Daimlerchrysler Ag Silicon-germanium solar cell having a high power efficiency
US7456057B2 (en) * 2005-12-31 2008-11-25 Corning Incorporated Germanium on glass and glass-ceramic structures

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100873432B1 (ko) * 2004-10-28 2008-12-11 미마스 한도타이 고교 가부시키가이샤 반도체기판의 제조방법, 솔라용 반도체기판 및 에칭액
RU2368038C1 (ru) * 2007-12-07 2009-09-20 Физико-технический институт им. А.Ф. Иоффе РАН Способ изготовления чипов многослойных фотопреобразователей

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4370510A (en) * 1980-09-26 1983-01-25 California Institute Of Technology Gallium arsenide single crystal solar cell structure and method of making
US6670544B2 (en) * 2000-12-08 2003-12-30 Daimlerchrysler Ag Silicon-germanium solar cell having a high power efficiency
DE10205618A1 (de) * 2002-02-11 2003-08-28 Daimler Chrysler Ag Silizium-Germanium Solarzelle mit hohem Wirkungsgrad und Verfahren zu deren Herstellung
US7456057B2 (en) * 2005-12-31 2008-11-25 Corning Incorporated Germanium on glass and glass-ceramic structures

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MICHAEL G. MAUK ET AL: "Large-grain (>1-mm), recrystallized germanium filns on alumina, fused silica, oxide-coated silicon substrates for III-V solar cell applications", JOURNAL OF CRYSTAL GROWTH, vol. 250, 2003, pages 50 - 56, XP004412902, DOI: doi:10.1016/S0022-0248(02)02213-3 *

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Publication number Publication date
RU2009140907A (ru) 2011-05-20
RU2449421C2 (ru) 2012-04-27

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