KR20090003334A - 구리 인듐 디셀레나이드-기재 광전지 장치 및 그의 제조 방법 - Google Patents

구리 인듐 디셀레나이드-기재 광전지 장치 및 그의 제조 방법 Download PDF

Info

Publication number
KR20090003334A
KR20090003334A KR1020087027938A KR20087027938A KR20090003334A KR 20090003334 A KR20090003334 A KR 20090003334A KR 1020087027938 A KR1020087027938 A KR 1020087027938A KR 20087027938 A KR20087027938 A KR 20087027938A KR 20090003334 A KR20090003334 A KR 20090003334A
Authority
KR
South Korea
Prior art keywords
sio
cis
silicon
silicone resin
photovoltaic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020087027938A
Other languages
English (en)
Korean (ko)
Inventor
토마스 던칸 반나드
유키나리 하리모토
히데카츄 하타나카
마키 이토흐
디미트리스 엘리아스 카트솔리스
미치타카 수토
비즈홍 쯔후
로렌스 엠. 우즈
조셉 에이치. 암스트롱
로진 엠. 리벨린
Original Assignee
다우 코닝 코포레이션
다우 코닝 도레이 캄파니 리미티드
아이티엔 에너지 시스템즈, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 다우 코닝 코포레이션, 다우 코닝 도레이 캄파니 리미티드, 아이티엔 에너지 시스템즈, 인코포레이티드 filed Critical 다우 코닝 코포레이션
Publication of KR20090003334A publication Critical patent/KR20090003334A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04Polysiloxanes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • H10F77/126Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16Photovoltaic cells having only PN heterojunction potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/12Polysiloxanes containing silicon bound to hydrogen
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/14Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/16Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • C08G77/20Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Silicon Polymers (AREA)
  • Photovoltaic Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1020087027938A 2006-04-18 2007-04-18 구리 인듐 디셀레나이드-기재 광전지 장치 및 그의 제조 방법 Ceased KR20090003334A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US79277006P 2006-04-18 2006-04-18
US79285206P 2006-04-18 2006-04-18
US60/792,852 2006-04-18
US60/792,770 2006-04-18

Publications (1)

Publication Number Publication Date
KR20090003334A true KR20090003334A (ko) 2009-01-09

Family

ID=38434840

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087027938A Ceased KR20090003334A (ko) 2006-04-18 2007-04-18 구리 인듐 디셀레나이드-기재 광전지 장치 및 그의 제조 방법

Country Status (9)

Country Link
US (1) US20090084428A1 (enExample)
EP (1) EP2018669B1 (enExample)
JP (2) JP4933610B2 (enExample)
KR (1) KR20090003334A (enExample)
CN (1) CN102646724A (enExample)
AT (1) ATE448569T1 (enExample)
DE (1) DE602007003216D1 (enExample)
ES (1) ES2335551T3 (enExample)
WO (1) WO2007123898A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8207442B2 (en) 2006-04-18 2012-06-26 Itn Energy Systems, Inc. Reinforcing structures for thin-film photovoltaic device substrates, and associated methods
WO2008036769A2 (en) 2006-09-19 2008-03-27 Itn Energy Systems, Inc. Semi-transparent dual layer back contact for bifacial and tandem junction thin-film photovolataic devices
EP2125363A2 (en) 2007-02-22 2009-12-02 Dow Corning Corporation Composite article having excellent fire and impact resistance and method of making the same
PL2031082T3 (pl) * 2007-08-31 2015-03-31 Aperam Alloys Imphy Metalowe podłoże o teksturze krystalograficznej, układ o teksturze krystalograficznej, ogniowo fotowoltaiczne i moduł fotowoltaiczny zawierające taki układ i sposób powlekania cienkimi warstwami
US20100236607A1 (en) * 2008-06-12 2010-09-23 General Electric Company Monolithically integrated solar modules and methods of manufacture
US8134069B2 (en) * 2009-04-13 2012-03-13 Miasole Method and apparatus for controllable sodium delivery for thin film photovoltaic materials
US20110017289A1 (en) * 2009-07-24 2011-01-27 Electronics And Telecommunications Research Institute Cigs solar cell and method of fabricating the same
KR102090184B1 (ko) * 2016-01-13 2020-03-18 주식회사 메카로에너지 Cigs 광흡수층을 포함하는 태양전지 및 이의 제조방법
KR101956093B1 (ko) * 2017-01-24 2019-06-24 울산과학기술원 유전체-금속 나노입자 복합체를 포함하는 광 흡수체, 이의 제조방법 및 이를 포함하는 물분해 광전극

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL131800C (enExample) * 1965-05-17
DE2709094C2 (de) * 1977-03-02 1984-11-22 Boehringer Mannheim Gmbh, 6800 Mannheim Adsorbens für die affinitätsspezifische Trennung von Nukleinsäuren, Verfahren zu seiner Herstellung und seine Verwendung
US4087585A (en) * 1977-05-23 1978-05-02 Dow Corning Corporation Self-adhering silicone compositions and preparations thereof
US4260780A (en) * 1979-11-27 1981-04-07 The United States Of America As Represented By The Secretary Of The Air Force Phenylmethylpolysilane polymers and process for their preparation
US4276424A (en) * 1979-12-03 1981-06-30 Petrarch Systems Methods for the production of organic polysilanes
US4314956A (en) * 1980-07-23 1982-02-09 Dow Corning Corporation High yield silicon carbide pre-ceramic polymers
US4324901A (en) * 1981-04-29 1982-04-13 Wisconsin Alumni Research Foundation Soluble polysilastyrene and method for preparation
EP0078541B1 (en) * 1981-11-04 1991-01-16 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Flexible photovoltaic device
US4530879A (en) * 1983-03-04 1985-07-23 Minnesota Mining And Manufacturing Company Radiation activated addition reaction
US4510094A (en) * 1983-12-06 1985-04-09 Minnesota Mining And Manufacturing Company Platinum complex
US4720856A (en) * 1986-09-02 1988-01-19 Motorola, Inc. Control circuit having a direct current control loop for controlling the gain of an attenuator
US4766176A (en) * 1987-07-20 1988-08-23 Dow Corning Corporation Storage stable heat curable organosiloxane compositions containing microencapsulated platinum-containing catalysts
JPH0214244A (ja) * 1988-06-30 1990-01-18 Toray Dow Corning Silicone Co Ltd 加熱硬化性オルガノポリシロキサン組成物
JP3029680B2 (ja) * 1991-01-29 2000-04-04 東レ・ダウコーニング・シリコーン株式会社 オルガノペンタシロキサンおよびその製造方法
DE4217432A1 (de) * 1992-05-26 1993-12-02 Inst Neue Mat Gemein Gmbh Verfahren zur Herstellung von Glas mit verbesserter Langzeitstandfähigkeit bei erhöhten Temperaturen
JP3169148B2 (ja) * 1992-09-30 2001-05-21 三井化学株式会社 防火ガラス
US5441897A (en) * 1993-04-12 1995-08-15 Midwest Research Institute Method of fabricating high-efficiency Cu(In,Ga)(SeS)2 thin films for solar cells
DE4423195A1 (de) * 1994-07-01 1996-01-04 Wacker Chemie Gmbh Triazenoxid-Übergangsmetall-Komplexe als Hydrosilylierungskatalysatoren
JP3825843B2 (ja) * 1996-09-12 2006-09-27 キヤノン株式会社 太陽電池モジュール
EP0850998B1 (en) * 1996-12-31 2004-04-28 Dow Corning Corporation Method for making rubber-modified rigid silicone resins and composites produced therefrom
US5985691A (en) * 1997-05-16 1999-11-16 International Solar Electric Technology, Inc. Method of making compound semiconductor films and making related electronic devices
DE19731416C1 (de) * 1997-07-22 1998-09-17 Vetrotech Saint Gobain Int Ag Brandschutzverglasung
JPH11289103A (ja) * 1998-02-05 1999-10-19 Canon Inc 半導体装置および太陽電池モジュ―ル及びその解体方法
US6447922B1 (en) * 2000-11-20 2002-09-10 General Electric Company Curable silicon adhesive compositions
US6846852B2 (en) * 2001-08-16 2005-01-25 Goldschmidt Ag Siloxane-containing compositions curable by radiation to silicone elastomers
US6537845B1 (en) * 2001-08-30 2003-03-25 Mccandless Brian E. Chemical surface deposition of ultra-thin semiconductors
US6660395B2 (en) * 2002-03-12 2003-12-09 Dow Corning Corporation Silicone resin based composites interleaved for improved toughness
JP4055053B2 (ja) * 2002-03-26 2008-03-05 本田技研工業株式会社 化合物薄膜太陽電池およびその製造方法
US7259803B2 (en) * 2002-05-27 2007-08-21 Nitto Denko Corporation Resin sheet, liquid crystal cell substrate comprising the same
JP3919001B2 (ja) * 2002-08-08 2007-05-23 信越化学工業株式会社 付加反応硬化型オルガノポリシロキサン組成物
US7037592B2 (en) * 2003-02-25 2006-05-02 Dow Coming Corporation Hybrid composite of silicone and organic resins
ATE539380T1 (de) * 2003-06-23 2012-01-15 Dow Corning Verklebungsverfahren mit grauskala photolithographie
KR20060066080A (ko) * 2003-08-01 2006-06-15 다우 코닝 코포레이션 광전지 어플리케이션을 위한 실리콘 기반의 유전성 코팅 및필름
JP2005089671A (ja) * 2003-09-19 2005-04-07 Shin Etsu Chem Co Ltd 硬化性シリコーン樹脂組成物
JP4503271B2 (ja) * 2003-11-28 2010-07-14 東レ・ダウコーニング株式会社 シリコーン積層体の製造方法
US8716592B2 (en) * 2004-07-12 2014-05-06 Quanex Ig Systems, Inc. Thin film photovoltaic assembly method
CA2586961A1 (en) * 2004-11-10 2006-05-18 Daystar Technologies, Inc. Thermal process for creation of an in-situ junction layer in cigs
US8092910B2 (en) * 2005-02-16 2012-01-10 Dow Corning Toray Co., Ltd. Reinforced silicone resin film and method of preparing same
EP1858981B1 (en) * 2005-02-16 2012-03-28 Dow Corning Corporation Reinforced silicone resin film and method of preparing same
US8207442B2 (en) * 2006-04-18 2012-06-26 Itn Energy Systems, Inc. Reinforcing structures for thin-film photovoltaic device substrates, and associated methods

Also Published As

Publication number Publication date
EP2018669A1 (en) 2009-01-28
JP2009534839A (ja) 2009-09-24
EP2018669B1 (en) 2009-11-11
US20090084428A1 (en) 2009-04-02
WO2007123898A1 (en) 2007-11-01
CN102646724A (zh) 2012-08-22
JP2012069965A (ja) 2012-04-05
DE602007003216D1 (de) 2009-12-24
ES2335551T3 (es) 2010-03-29
ATE448569T1 (de) 2009-11-15
JP4933610B2 (ja) 2012-05-16

Similar Documents

Publication Publication Date Title
US8207442B2 (en) Reinforcing structures for thin-film photovoltaic device substrates, and associated methods
EP2016625B1 (en) Copper indium diselenide-based photovoltaic device and method of preparing the same
EP2333841A2 (en) Cadmium telluride-based photovoltaic device and method of preparing the same
JP4933610B2 (ja) 銅インジウム二セレン化物をベースとする光起電デバイス及びその光起電デバイスを作製する方法
JP5357046B2 (ja) 硬化シリコーン組成物で被覆またはラミネートされたガラス基板
JP5091249B2 (ja) 多層の硬化シリコーン樹脂組成物で被覆またはラミネートされたガラス基板
EP2485276A2 (en) Photovoltaic Cell Module and Method of Forming
CN101589483B (zh) 含阳离子敏感层的复合制品
EP2265666A1 (en) Silicone composition, silicone adhesive, coated and laminated substrates
CN101473447B (zh) 硒化铟铜基光伏器件及其制造方法
WO2014105981A1 (en) Method of preparing electroactive article and electroactive article formed in accordance therewith

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20081114

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20120312

Comment text: Request for Examination of Application

PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20130612

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20131031

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20130612

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I