DE602007003216D1 - Fotovoltaische anordnung auf kupfer-indium-diselenidbasis und herstellungsverfahren dafür - Google Patents

Fotovoltaische anordnung auf kupfer-indium-diselenidbasis und herstellungsverfahren dafür

Info

Publication number
DE602007003216D1
DE602007003216D1 DE602007003216T DE602007003216T DE602007003216D1 DE 602007003216 D1 DE602007003216 D1 DE 602007003216D1 DE 602007003216 T DE602007003216 T DE 602007003216T DE 602007003216 T DE602007003216 T DE 602007003216T DE 602007003216 D1 DE602007003216 D1 DE 602007003216D1
Authority
DE
Germany
Prior art keywords
copper
indium
diselenid
manufacturing
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602007003216T
Other languages
German (de)
English (en)
Inventor
Thomas Duncan Barnard
Yukinari Harimoto
Hidekatsu Hatanaka
Maki Itoh
Dimitris Elias Katsoulis
Michitaka Suto
Bizhong Zhu
Lawrence M Woods
Joseph H Armstrong
Rosine M Ribelin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Toray Specialty Materials KK
ITN Energy Systems Inc
Dow Silicones Corp
Original Assignee
Dow Corning Toray Co Ltd
Dow Corning Corp
ITN Energy Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Toray Co Ltd, Dow Corning Corp, ITN Energy Systems Inc filed Critical Dow Corning Toray Co Ltd
Publication of DE602007003216D1 publication Critical patent/DE602007003216D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Silicon Polymers (AREA)
  • Photovoltaic Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
DE602007003216T 2006-04-18 2007-04-18 Fotovoltaische anordnung auf kupfer-indium-diselenidbasis und herstellungsverfahren dafür Active DE602007003216D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US79277006P 2006-04-18 2006-04-18
US79285206P 2006-04-18 2006-04-18
PCT/US2007/009359 WO2007123898A1 (en) 2006-04-18 2007-04-18 Copper indium diselenide-based photovoltaic device and method of preparing the same

Publications (1)

Publication Number Publication Date
DE602007003216D1 true DE602007003216D1 (de) 2009-12-24

Family

ID=38434840

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602007003216T Active DE602007003216D1 (de) 2006-04-18 2007-04-18 Fotovoltaische anordnung auf kupfer-indium-diselenidbasis und herstellungsverfahren dafür

Country Status (9)

Country Link
US (1) US20090084428A1 (enExample)
EP (1) EP2018669B1 (enExample)
JP (2) JP4933610B2 (enExample)
KR (1) KR20090003334A (enExample)
CN (1) CN102646724A (enExample)
AT (1) ATE448569T1 (enExample)
DE (1) DE602007003216D1 (enExample)
ES (1) ES2335551T3 (enExample)
WO (1) WO2007123898A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8207442B2 (en) 2006-04-18 2012-06-26 Itn Energy Systems, Inc. Reinforcing structures for thin-film photovoltaic device substrates, and associated methods
WO2008036769A2 (en) 2006-09-19 2008-03-27 Itn Energy Systems, Inc. Semi-transparent dual layer back contact for bifacial and tandem junction thin-film photovolataic devices
EP2125363A2 (en) 2007-02-22 2009-12-02 Dow Corning Corporation Composite article having excellent fire and impact resistance and method of making the same
PL2031082T3 (pl) * 2007-08-31 2015-03-31 Aperam Alloys Imphy Metalowe podłoże o teksturze krystalograficznej, układ o teksturze krystalograficznej, ogniowo fotowoltaiczne i moduł fotowoltaiczny zawierające taki układ i sposób powlekania cienkimi warstwami
US20100236607A1 (en) * 2008-06-12 2010-09-23 General Electric Company Monolithically integrated solar modules and methods of manufacture
US8134069B2 (en) * 2009-04-13 2012-03-13 Miasole Method and apparatus for controllable sodium delivery for thin film photovoltaic materials
US20110017289A1 (en) * 2009-07-24 2011-01-27 Electronics And Telecommunications Research Institute Cigs solar cell and method of fabricating the same
KR102090184B1 (ko) * 2016-01-13 2020-03-18 주식회사 메카로에너지 Cigs 광흡수층을 포함하는 태양전지 및 이의 제조방법
KR101956093B1 (ko) * 2017-01-24 2019-06-24 울산과학기술원 유전체-금속 나노입자 복합체를 포함하는 광 흡수체, 이의 제조방법 및 이를 포함하는 물분해 광전극

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL131800C (enExample) * 1965-05-17
DE2709094C2 (de) * 1977-03-02 1984-11-22 Boehringer Mannheim Gmbh, 6800 Mannheim Adsorbens für die affinitätsspezifische Trennung von Nukleinsäuren, Verfahren zu seiner Herstellung und seine Verwendung
US4087585A (en) * 1977-05-23 1978-05-02 Dow Corning Corporation Self-adhering silicone compositions and preparations thereof
US4260780A (en) * 1979-11-27 1981-04-07 The United States Of America As Represented By The Secretary Of The Air Force Phenylmethylpolysilane polymers and process for their preparation
US4276424A (en) * 1979-12-03 1981-06-30 Petrarch Systems Methods for the production of organic polysilanes
US4314956A (en) * 1980-07-23 1982-02-09 Dow Corning Corporation High yield silicon carbide pre-ceramic polymers
US4324901A (en) * 1981-04-29 1982-04-13 Wisconsin Alumni Research Foundation Soluble polysilastyrene and method for preparation
EP0078541B1 (en) * 1981-11-04 1991-01-16 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Flexible photovoltaic device
US4530879A (en) * 1983-03-04 1985-07-23 Minnesota Mining And Manufacturing Company Radiation activated addition reaction
US4510094A (en) * 1983-12-06 1985-04-09 Minnesota Mining And Manufacturing Company Platinum complex
US4720856A (en) * 1986-09-02 1988-01-19 Motorola, Inc. Control circuit having a direct current control loop for controlling the gain of an attenuator
US4766176A (en) * 1987-07-20 1988-08-23 Dow Corning Corporation Storage stable heat curable organosiloxane compositions containing microencapsulated platinum-containing catalysts
JPH0214244A (ja) * 1988-06-30 1990-01-18 Toray Dow Corning Silicone Co Ltd 加熱硬化性オルガノポリシロキサン組成物
JP3029680B2 (ja) * 1991-01-29 2000-04-04 東レ・ダウコーニング・シリコーン株式会社 オルガノペンタシロキサンおよびその製造方法
DE4217432A1 (de) * 1992-05-26 1993-12-02 Inst Neue Mat Gemein Gmbh Verfahren zur Herstellung von Glas mit verbesserter Langzeitstandfähigkeit bei erhöhten Temperaturen
JP3169148B2 (ja) * 1992-09-30 2001-05-21 三井化学株式会社 防火ガラス
US5441897A (en) * 1993-04-12 1995-08-15 Midwest Research Institute Method of fabricating high-efficiency Cu(In,Ga)(SeS)2 thin films for solar cells
DE4423195A1 (de) * 1994-07-01 1996-01-04 Wacker Chemie Gmbh Triazenoxid-Übergangsmetall-Komplexe als Hydrosilylierungskatalysatoren
JP3825843B2 (ja) * 1996-09-12 2006-09-27 キヤノン株式会社 太陽電池モジュール
EP0850998B1 (en) * 1996-12-31 2004-04-28 Dow Corning Corporation Method for making rubber-modified rigid silicone resins and composites produced therefrom
US5985691A (en) * 1997-05-16 1999-11-16 International Solar Electric Technology, Inc. Method of making compound semiconductor films and making related electronic devices
DE19731416C1 (de) * 1997-07-22 1998-09-17 Vetrotech Saint Gobain Int Ag Brandschutzverglasung
JPH11289103A (ja) * 1998-02-05 1999-10-19 Canon Inc 半導体装置および太陽電池モジュ―ル及びその解体方法
US6447922B1 (en) * 2000-11-20 2002-09-10 General Electric Company Curable silicon adhesive compositions
US6846852B2 (en) * 2001-08-16 2005-01-25 Goldschmidt Ag Siloxane-containing compositions curable by radiation to silicone elastomers
US6537845B1 (en) * 2001-08-30 2003-03-25 Mccandless Brian E. Chemical surface deposition of ultra-thin semiconductors
US6660395B2 (en) * 2002-03-12 2003-12-09 Dow Corning Corporation Silicone resin based composites interleaved for improved toughness
JP4055053B2 (ja) * 2002-03-26 2008-03-05 本田技研工業株式会社 化合物薄膜太陽電池およびその製造方法
US7259803B2 (en) * 2002-05-27 2007-08-21 Nitto Denko Corporation Resin sheet, liquid crystal cell substrate comprising the same
JP3919001B2 (ja) * 2002-08-08 2007-05-23 信越化学工業株式会社 付加反応硬化型オルガノポリシロキサン組成物
US7037592B2 (en) * 2003-02-25 2006-05-02 Dow Coming Corporation Hybrid composite of silicone and organic resins
ATE539380T1 (de) * 2003-06-23 2012-01-15 Dow Corning Verklebungsverfahren mit grauskala photolithographie
KR20060066080A (ko) * 2003-08-01 2006-06-15 다우 코닝 코포레이션 광전지 어플리케이션을 위한 실리콘 기반의 유전성 코팅 및필름
JP2005089671A (ja) * 2003-09-19 2005-04-07 Shin Etsu Chem Co Ltd 硬化性シリコーン樹脂組成物
JP4503271B2 (ja) * 2003-11-28 2010-07-14 東レ・ダウコーニング株式会社 シリコーン積層体の製造方法
US8716592B2 (en) * 2004-07-12 2014-05-06 Quanex Ig Systems, Inc. Thin film photovoltaic assembly method
CA2586961A1 (en) * 2004-11-10 2006-05-18 Daystar Technologies, Inc. Thermal process for creation of an in-situ junction layer in cigs
US8092910B2 (en) * 2005-02-16 2012-01-10 Dow Corning Toray Co., Ltd. Reinforced silicone resin film and method of preparing same
EP1858981B1 (en) * 2005-02-16 2012-03-28 Dow Corning Corporation Reinforced silicone resin film and method of preparing same
US8207442B2 (en) * 2006-04-18 2012-06-26 Itn Energy Systems, Inc. Reinforcing structures for thin-film photovoltaic device substrates, and associated methods

Also Published As

Publication number Publication date
EP2018669A1 (en) 2009-01-28
JP2009534839A (ja) 2009-09-24
KR20090003334A (ko) 2009-01-09
EP2018669B1 (en) 2009-11-11
US20090084428A1 (en) 2009-04-02
WO2007123898A1 (en) 2007-11-01
CN102646724A (zh) 2012-08-22
JP2012069965A (ja) 2012-04-05
ES2335551T3 (es) 2010-03-29
ATE448569T1 (de) 2009-11-15
JP4933610B2 (ja) 2012-05-16

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