JP4933610B2 - 銅インジウム二セレン化物をベースとする光起電デバイス及びその光起電デバイスを作製する方法 - Google Patents

銅インジウム二セレン化物をベースとする光起電デバイス及びその光起電デバイスを作製する方法 Download PDF

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Publication number
JP4933610B2
JP4933610B2 JP2009506541A JP2009506541A JP4933610B2 JP 4933610 B2 JP4933610 B2 JP 4933610B2 JP 2009506541 A JP2009506541 A JP 2009506541A JP 2009506541 A JP2009506541 A JP 2009506541A JP 4933610 B2 JP4933610 B2 JP 4933610B2
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Prior art keywords
sio
silicone resin
silicone
alternatively
layer
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Expired - Fee Related
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JP2009506541A
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Japanese (ja)
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JP2009534839A (ja
JP2009534839A5 (enExample
Inventor
トーマス・ダンカン・バーナード
志成 張原
秀克 畑中
真樹 伊藤
ディミトリス・エリアス・カツォーリス
通孝 須藤
ビゾング・ズー
ローレンス・エム・ウッズ
ジョセフ・エイチ・アームストロング
ローザイン・エム・リベリン
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DuPont Toray Specialty Materials KK
Dow Silicones Corp
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Dow Corning Toray Co Ltd
Dow Corning Corp
Dow Silicones Corp
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C08G77/16—Polysiloxanes containing silicon bound to oxygen-containing groups to hydroxyl groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Silicon Polymers (AREA)
  • Photovoltaic Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP2009506541A 2006-04-18 2007-04-18 銅インジウム二セレン化物をベースとする光起電デバイス及びその光起電デバイスを作製する方法 Expired - Fee Related JP4933610B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US79277006P 2006-04-18 2006-04-18
US79285206P 2006-04-18 2006-04-18
US60/792,852 2006-04-18
US60/792,770 2006-04-18
PCT/US2007/009359 WO2007123898A1 (en) 2006-04-18 2007-04-18 Copper indium diselenide-based photovoltaic device and method of preparing the same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011231726A Division JP2012069965A (ja) 2006-04-18 2011-10-21 銅インジウム二セレン化物をベースとする光起電デバイス及びその光起電デバイスを作製する方法

Publications (3)

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JP2009534839A JP2009534839A (ja) 2009-09-24
JP2009534839A5 JP2009534839A5 (enExample) 2010-06-03
JP4933610B2 true JP4933610B2 (ja) 2012-05-16

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JP2009506541A Expired - Fee Related JP4933610B2 (ja) 2006-04-18 2007-04-18 銅インジウム二セレン化物をベースとする光起電デバイス及びその光起電デバイスを作製する方法
JP2011231726A Pending JP2012069965A (ja) 2006-04-18 2011-10-21 銅インジウム二セレン化物をベースとする光起電デバイス及びその光起電デバイスを作製する方法

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JP2011231726A Pending JP2012069965A (ja) 2006-04-18 2011-10-21 銅インジウム二セレン化物をベースとする光起電デバイス及びその光起電デバイスを作製する方法

Country Status (9)

Country Link
US (1) US20090084428A1 (enExample)
EP (1) EP2018669B1 (enExample)
JP (2) JP4933610B2 (enExample)
KR (1) KR20090003334A (enExample)
CN (1) CN102646724A (enExample)
AT (1) ATE448569T1 (enExample)
DE (1) DE602007003216D1 (enExample)
ES (1) ES2335551T3 (enExample)
WO (1) WO2007123898A1 (enExample)

Families Citing this family (9)

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US8207442B2 (en) 2006-04-18 2012-06-26 Itn Energy Systems, Inc. Reinforcing structures for thin-film photovoltaic device substrates, and associated methods
US8124870B2 (en) 2006-09-19 2012-02-28 Itn Energy System, Inc. Systems and processes for bifacial collection and tandem junctions using a thin-film photovoltaic device
CN101646559A (zh) 2007-02-22 2010-02-10 陶氏康宁公司 具有优良的耐火性和抗冲击性的复合制品及其制备方法
EP2031082B1 (fr) * 2007-08-31 2014-09-03 Aperam Alloys Imphy Substrat métallique texture cristallographiquement, dispositif texture cristallographiquement, cellule et module photovoltaique comprenant un tel dispositif et procédé de dépot de couches minces
US20100236607A1 (en) * 2008-06-12 2010-09-23 General Electric Company Monolithically integrated solar modules and methods of manufacture
US8134069B2 (en) * 2009-04-13 2012-03-13 Miasole Method and apparatus for controllable sodium delivery for thin film photovoltaic materials
US20110017289A1 (en) * 2009-07-24 2011-01-27 Electronics And Telecommunications Research Institute Cigs solar cell and method of fabricating the same
KR102090184B1 (ko) * 2016-01-13 2020-03-18 주식회사 메카로에너지 Cigs 광흡수층을 포함하는 태양전지 및 이의 제조방법
KR101956093B1 (ko) * 2017-01-24 2019-06-24 울산과학기술원 유전체-금속 나노입자 복합체를 포함하는 광 흡수체, 이의 제조방법 및 이를 포함하는 물분해 광전극

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EP1489666A1 (en) * 2002-03-26 2004-12-22 Honda Giken Kogyo Kabushiki Kaisha Compound thin-film solar cell and process for producing the same
WO2005017058A1 (en) * 2003-08-01 2005-02-24 Dow Corning Corporation Silicone based dielectric coatings and films for photovoltaic applications
US20050061437A1 (en) * 2003-09-19 2005-03-24 Shin-Etsu Chemical Co., Ltd. Curable silicone resin composition
WO2005052078A1 (en) * 2003-11-28 2005-06-09 Dow Corning Toray Co., Ltd. A method of manufacturing a layered silicone composite material

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Publication number Priority date Publication date Assignee Title
EP0078541A2 (en) * 1981-11-04 1983-05-11 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Flexible photovoltaic device
EP0881695A2 (en) * 1997-05-16 1998-12-02 International Solar Electric Technology, Inc. A method of making group IB-IIIA-VIA compund semiconductor films and method of fabricating a photovoltaic device
EP1207188A2 (en) * 2000-11-20 2002-05-22 General Electric Company Curable silicone adhesive compositions
EP1489666A1 (en) * 2002-03-26 2004-12-22 Honda Giken Kogyo Kabushiki Kaisha Compound thin-film solar cell and process for producing the same
EP1388572A1 (en) * 2002-08-08 2004-02-11 Shin-Etsu Chemical Co., Ltd. Addition reaction curable organopolysiloxane composition
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WO2005052078A1 (en) * 2003-11-28 2005-06-09 Dow Corning Toray Co., Ltd. A method of manufacturing a layered silicone composite material

Also Published As

Publication number Publication date
US20090084428A1 (en) 2009-04-02
KR20090003334A (ko) 2009-01-09
EP2018669A1 (en) 2009-01-28
EP2018669B1 (en) 2009-11-11
ES2335551T3 (es) 2010-03-29
JP2012069965A (ja) 2012-04-05
JP2009534839A (ja) 2009-09-24
ATE448569T1 (de) 2009-11-15
DE602007003216D1 (de) 2009-12-24
WO2007123898A1 (en) 2007-11-01
CN102646724A (zh) 2012-08-22

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