KR20080075561A - 기판에 질화 탄탈륨을 침착시키기 위한 아미드화 탄탈륨전구체 - Google Patents

기판에 질화 탄탈륨을 침착시키기 위한 아미드화 탄탈륨전구체 Download PDF

Info

Publication number
KR20080075561A
KR20080075561A KR1020087018548A KR20087018548A KR20080075561A KR 20080075561 A KR20080075561 A KR 20080075561A KR 1020087018548 A KR1020087018548 A KR 1020087018548A KR 20087018548 A KR20087018548 A KR 20087018548A KR 20080075561 A KR20080075561 A KR 20080075561A
Authority
KR
South Korea
Prior art keywords
formula
group
alkyl
tantalum
perfluoroalkyl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020087018548A
Other languages
English (en)
Korean (ko)
Inventor
토마스 에이취 바움
가우탐 반디리
Original Assignee
어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 filed Critical 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드
Publication of KR20080075561A publication Critical patent/KR20080075561A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/005—Compounds of elements of Group 5 of the Periodic Table without metal-carbon linkages
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
KR1020087018548A 1998-01-23 1999-01-21 기판에 질화 탄탈륨을 침착시키기 위한 아미드화 탄탈륨전구체 Ceased KR20080075561A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/012,679 US6015917A (en) 1998-01-23 1998-01-23 Tantalum amide precursors for deposition of tantalum nitride on a substrate
US09/012,679 1998-01-23

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020077014724A Division KR20070086743A (ko) 1998-01-23 1999-01-21 기판에 질화 탄탈륨을 침착시키기 위한 아미드화 탄탈륨전구체

Publications (1)

Publication Number Publication Date
KR20080075561A true KR20080075561A (ko) 2008-08-18

Family

ID=21756172

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020007007507A Ceased KR20010040324A (ko) 1998-01-23 1999-01-21 기판에 질화 탄탈륨을 침착시키기 위한 아미드화 탄탈륨전구체
KR1020077014724A Ceased KR20070086743A (ko) 1998-01-23 1999-01-21 기판에 질화 탄탈륨을 침착시키기 위한 아미드화 탄탈륨전구체
KR1020087018548A Ceased KR20080075561A (ko) 1998-01-23 1999-01-21 기판에 질화 탄탈륨을 침착시키기 위한 아미드화 탄탈륨전구체

Family Applications Before (2)

Application Number Title Priority Date Filing Date
KR1020007007507A Ceased KR20010040324A (ko) 1998-01-23 1999-01-21 기판에 질화 탄탈륨을 침착시키기 위한 아미드화 탄탈륨전구체
KR1020077014724A Ceased KR20070086743A (ko) 1998-01-23 1999-01-21 기판에 질화 탄탈륨을 침착시키기 위한 아미드화 탄탈륨전구체

Country Status (7)

Country Link
US (2) US6015917A (enExample)
JP (1) JP2002501075A (enExample)
KR (3) KR20010040324A (enExample)
AU (1) AU2332199A (enExample)
DE (1) DE19982730C2 (enExample)
GB (1) GB2354762B (enExample)
WO (1) WO1999037655A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017116124A1 (ko) * 2015-12-28 2017-07-06 주식회사 유피케미칼 탄탈럼 화합물, 이의 제조 방법, 이를 포함하는 막 증착용 전구체 조성물, 및 이를 이용하는 막의 증착 방법
US10134582B2 (en) 2015-12-21 2018-11-20 Samsung Electronics Co., Ltd. Tantalum compound and methods of forming thin film and fabricating integrated circuit device by using the same

Families Citing this family (168)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7323581B1 (en) * 1990-07-06 2008-01-29 Advanced Technology Materials, Inc. Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition
US6153519A (en) * 1997-03-31 2000-11-28 Motorola, Inc. Method of forming a barrier layer
US6461675B2 (en) 1998-07-10 2002-10-08 Cvc Products, Inc. Method for forming a copper film on a substrate
US6190732B1 (en) 1998-09-03 2001-02-20 Cvc Products, Inc. Method and system for dispensing process gas for fabricating a device on a substrate
KR20000022003A (ko) * 1998-09-10 2000-04-25 이경수 금속과규소를포함한3성분질화물막의형성방법
US6974766B1 (en) * 1998-10-01 2005-12-13 Applied Materials, Inc. In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
US7012292B1 (en) * 1998-11-25 2006-03-14 Advanced Technology Materials, Inc Oxidative top electrode deposition process, and microelectronic device structure
US6294836B1 (en) 1998-12-22 2001-09-25 Cvc Products Inc. Semiconductor chip interconnect barrier material and fabrication method
US6616972B1 (en) * 1999-02-24 2003-09-09 Air Products And Chemicals, Inc. Synthesis of metal oxide and oxynitride
US6204204B1 (en) * 1999-04-01 2001-03-20 Cvc Products, Inc. Method and apparatus for depositing tantalum-based thin films with organmetallic precursor
US6245655B1 (en) 1999-04-01 2001-06-12 Cvc Products, Inc. Method for planarized deposition of a material
US6503561B1 (en) * 1999-07-08 2003-01-07 Air Products And Chemicals, Inc. Liquid precursor mixtures for deposition of multicomponent metal containing materials
US6238734B1 (en) * 1999-07-08 2001-05-29 Air Products And Chemicals, Inc. Liquid precursor mixtures for deposition of multicomponent metal containing materials
US6156743A (en) * 1999-10-18 2000-12-05 Whitcomb; John E. Method of decreasing fatigue
FI20000099A0 (fi) 2000-01-18 2000-01-18 Asm Microchemistry Ltd Menetelmä metalliohutkalvojen kasvattamiseksi
US6743473B1 (en) * 2000-02-16 2004-06-01 Applied Materials, Inc. Chemical vapor deposition of barriers from novel precursors
US6319766B1 (en) 2000-02-22 2001-11-20 Applied Materials, Inc. Method of tantalum nitride deposition by tantalum oxide densification
US6627995B2 (en) 2000-03-03 2003-09-30 Cvc Products, Inc. Microelectronic interconnect material with adhesion promotion layer and fabrication method
US6984591B1 (en) * 2000-04-20 2006-01-10 International Business Machines Corporation Precursor source mixtures
US20020003085A1 (en) * 2000-05-19 2002-01-10 Chandran Ravi R. Multilayer electrochemical cell technology using sol-gel processing applied to ceramic oxygen generator
US6620723B1 (en) * 2000-06-27 2003-09-16 Applied Materials, Inc. Formation of boride barrier layers using chemisorption techniques
US7405158B2 (en) * 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US6551929B1 (en) * 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US7101795B1 (en) * 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US6455421B1 (en) 2000-07-31 2002-09-24 Applied Materials, Inc. Plasma treatment of tantalum nitride compound films formed by chemical vapor deposition
US6444263B1 (en) 2000-09-15 2002-09-03 Cvc Products, Inc. Method of chemical-vapor deposition of a material
US20020036780A1 (en) * 2000-09-27 2002-03-28 Hiroaki Nakamura Image processing apparatus
US6573150B1 (en) * 2000-10-10 2003-06-03 Applied Materials, Inc. Integration of CVD tantalum oxide with titanium nitride and tantalum nitride to form MIM capacitors
JP3963078B2 (ja) * 2000-12-25 2007-08-22 株式会社高純度化学研究所 ターシャリーアミルイミドトリス（ジメチルアミド）タンタルとその製造方法及びそれを用いたｍｏｃｖｄ用原料溶液並びにそれを用いた窒化タンタル膜の形成方法
EP1414568B1 (en) * 2001-03-12 2007-08-22 The Queen's University of Belfast Use of metal bistriflimide compounds
US7005392B2 (en) * 2001-03-30 2006-02-28 Advanced Technology Materials, Inc. Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using same
US7084080B2 (en) * 2001-03-30 2006-08-01 Advanced Technology Materials, Inc. Silicon source reagent compositions, and method of making and using same for microelectronic device structure
KR100418580B1 (ko) 2001-06-12 2004-02-21 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조방법
KR100422565B1 (ko) 2001-06-12 2004-03-12 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조방법
KR100410389B1 (ko) 2001-06-12 2003-12-18 주식회사 하이닉스반도체 반도체 소자의 캐패시터 제조방법
US7098131B2 (en) * 2001-07-19 2006-08-29 Samsung Electronics Co., Ltd. Methods for forming atomic layers and thin films including tantalum nitride and devices including the same
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
JP2005504885A (ja) 2001-07-25 2005-02-17 アプライド　マテリアルズ　インコーポレイテッド 新規なスパッタ堆積方法を使用したバリア形成
US20030029715A1 (en) * 2001-07-25 2003-02-13 Applied Materials, Inc. An Apparatus For Annealing Substrates In Physical Vapor Deposition Systems
US20090004850A1 (en) 2001-07-25 2009-01-01 Seshadri Ganguli Process for forming cobalt and cobalt silicide materials in tungsten contact applications
US8110489B2 (en) * 2001-07-25 2012-02-07 Applied Materials, Inc. Process for forming cobalt-containing materials
US20080268635A1 (en) * 2001-07-25 2008-10-30 Sang-Ho Yu Process for forming cobalt and cobalt silicide materials in copper contact applications
US6718126B2 (en) * 2001-09-14 2004-04-06 Applied Materials, Inc. Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition
US7049226B2 (en) * 2001-09-26 2006-05-23 Applied Materials, Inc. Integration of ALD tantalum nitride for copper metallization
US6936906B2 (en) * 2001-09-26 2005-08-30 Applied Materials, Inc. Integration of barrier layer and seed layer
US7780785B2 (en) 2001-10-26 2010-08-24 Applied Materials, Inc. Gas delivery apparatus for atomic layer deposition
US7204886B2 (en) 2002-11-14 2007-04-17 Applied Materials, Inc. Apparatus and method for hybrid chemical processing
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6773507B2 (en) * 2001-12-06 2004-08-10 Applied Materials, Inc. Apparatus and method for fast-cycle atomic layer deposition
US7081271B2 (en) * 2001-12-07 2006-07-25 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
US6939801B2 (en) * 2001-12-21 2005-09-06 Applied Materials, Inc. Selective deposition of a barrier layer on a dielectric material
US6998014B2 (en) 2002-01-26 2006-02-14 Applied Materials, Inc. Apparatus and method for plasma assisted deposition
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6833161B2 (en) * 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US6972267B2 (en) * 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US6846516B2 (en) * 2002-04-08 2005-01-25 Applied Materials, Inc. Multiple precursor cyclical deposition system
US6720027B2 (en) * 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US7279432B2 (en) * 2002-04-16 2007-10-09 Applied Materials, Inc. System and method for forming an integrated barrier layer
US20040033371A1 (en) * 2002-05-16 2004-02-19 Hacker Nigel P. Deposition of organosilsesquioxane films
KR100505043B1 (ko) * 2002-05-25 2005-07-29 삼성전자주식회사 커패시터 형성 방법
US7041335B2 (en) * 2002-06-04 2006-05-09 Applied Materials, Inc. Titanium tantalum nitride silicide layer
US6552209B1 (en) * 2002-06-24 2003-04-22 Air Products And Chemicals, Inc. Preparation of metal imino/amino complexes for metal oxide and metal nitride thin films
US6838125B2 (en) * 2002-07-10 2005-01-04 Applied Materials, Inc. Method of film deposition using activated precursor gases
US20040009336A1 (en) * 2002-07-11 2004-01-15 Applied Materials, Inc. Titanium silicon nitride (TISIN) barrier layer for copper diffusion
US7186385B2 (en) * 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US6955211B2 (en) 2002-07-17 2005-10-18 Applied Materials, Inc. Method and apparatus for gas temperature control in a semiconductor processing system
US7066194B2 (en) * 2002-07-19 2006-06-27 Applied Materials, Inc. Valve design and configuration for fast delivery system
US6772072B2 (en) 2002-07-22 2004-08-03 Applied Materials, Inc. Method and apparatus for monitoring solid precursor delivery
US6915592B2 (en) 2002-07-29 2005-07-12 Applied Materials, Inc. Method and apparatus for generating gas to a processing chamber
GB2391555A (en) * 2002-08-09 2004-02-11 Epichem Ltd Vapour phase deposition of silicate and oxide films
US6967159B2 (en) 2002-08-28 2005-11-22 Micron Technology, Inc. Systems and methods for forming refractory metal nitride layers using organic amines
US6995081B2 (en) * 2002-08-28 2006-02-07 Micron Technology, Inc. Systems and methods for forming tantalum silicide layers
US6794284B2 (en) 2002-08-28 2004-09-21 Micron Technology, Inc. Systems and methods for forming refractory metal nitride layers using disilazanes
US6821563B2 (en) 2002-10-02 2004-11-23 Applied Materials, Inc. Gas distribution system for cyclical layer deposition
US20040065255A1 (en) * 2002-10-02 2004-04-08 Applied Materials, Inc. Cyclical layer deposition system
US6905737B2 (en) * 2002-10-11 2005-06-14 Applied Materials, Inc. Method of delivering activated species for rapid cyclical deposition
US7262133B2 (en) * 2003-01-07 2007-08-28 Applied Materials, Inc. Enhancement of copper line reliability using thin ALD tan film to cap the copper line
US7244683B2 (en) * 2003-01-07 2007-07-17 Applied Materials, Inc. Integration of ALD/CVD barriers with porous low k materials
US6989457B2 (en) * 2003-01-16 2006-01-24 Advanced Technology Materials, Inc. Chemical vapor deposition precursors for deposition of tantalum-based materials
US6753248B1 (en) 2003-01-27 2004-06-22 Applied Materials, Inc. Post metal barrier/adhesion film
US20040253386A1 (en) * 2003-06-13 2004-12-16 Sarojini Deevi Preparation of intermetallics by metallo-organic decomposition
JP2007523994A (ja) * 2003-06-18 2007-08-23 アプライド　マテリアルズ　インコーポレイテッド バリヤ物質の原子層堆積
US7208427B2 (en) * 2003-08-18 2007-04-24 Advanced Technology Materials, Inc. Precursor compositions and processes for MOCVD of barrier materials in semiconductor manufacturing
US6964911B2 (en) * 2003-09-23 2005-11-15 Freescale Semiconductor, Inc. Method for forming a semiconductor device having isolation regions
US20050067103A1 (en) * 2003-09-26 2005-03-31 Applied Materials, Inc. Interferometer endpoint monitoring device
US6960675B2 (en) * 2003-10-14 2005-11-01 Advanced Technology Materials, Inc. Tantalum amide complexes for depositing tantalum-containing films, and method of making same
US20050104142A1 (en) * 2003-11-13 2005-05-19 Vijav Narayanan CVD tantalum compounds for FET get electrodes
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US20060153995A1 (en) * 2004-05-21 2006-07-13 Applied Materials, Inc. Method for fabricating a dielectric stack
US20060062917A1 (en) * 2004-05-21 2006-03-23 Shankar Muthukrishnan Vapor deposition of hafnium silicate materials with tris(dimethylamino)silane
US20060019033A1 (en) * 2004-05-21 2006-01-26 Applied Materials, Inc. Plasma treatment of hafnium-containing materials
US8323754B2 (en) * 2004-05-21 2012-12-04 Applied Materials, Inc. Stabilization of high-k dielectric materials
US7166732B2 (en) * 2004-06-16 2007-01-23 Advanced Technology Materials, Inc. Copper (I) compounds useful as deposition precursors of copper thin films
US7241686B2 (en) * 2004-07-20 2007-07-10 Applied Materials, Inc. Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA
CN101052615B (zh) 2004-11-02 2010-07-14 株式会社艾迪科 金属化合物、薄膜形成用原料及薄膜的制造方法
US20060102895A1 (en) * 2004-11-16 2006-05-18 Hendrix Bryan C Precursor compositions for forming tantalum-containing films, and tantalum-containing barrier films and copper-metallized semiconductor device structures
US7429402B2 (en) * 2004-12-10 2008-09-30 Applied Materials, Inc. Ruthenium as an underlayer for tungsten film deposition
JP5053543B2 (ja) * 2005-02-02 2012-10-17 東ソー株式会社 タンタル化合物、その製造方法、タンタル含有薄膜、及びその形成方法
US7247594B2 (en) * 2005-04-13 2007-07-24 Chevron Phillips Chemical Co. Lp Catalysts for olefin polymerization
US7410927B2 (en) * 2005-04-13 2008-08-12 Chevron Phillips Chemical Company, Lp Catalysts for olefin polymerization
US9312557B2 (en) * 2005-05-11 2016-04-12 Schlumberger Technology Corporation Fuel cell apparatus and method for downhole power systems
WO2007005088A2 (en) * 2005-07-01 2007-01-11 Honeywell International Inc. Vaporizable metalorganic compounds for deposition of metals and metal-containing thin films
US20070020890A1 (en) * 2005-07-19 2007-01-25 Applied Materials, Inc. Method and apparatus for semiconductor processing
US7521356B2 (en) * 2005-09-01 2009-04-21 Micron Technology, Inc. Atomic layer deposition systems and methods including silicon-containing tantalum precursor compounds
US20070065578A1 (en) * 2005-09-21 2007-03-22 Applied Materials, Inc. Treatment processes for a batch ALD reactor
US7547796B2 (en) * 2005-09-29 2009-06-16 Praxair Technology, Inc. Organometallic compounds, processes for the preparation thereof and methods of use thereof
US7550385B2 (en) * 2005-09-30 2009-06-23 Intel Corporation Amine-free deposition of metal-nitride films
US8993055B2 (en) 2005-10-27 2015-03-31 Asm International N.V. Enhanced thin film deposition
US20070099422A1 (en) * 2005-10-28 2007-05-03 Kapila Wijekoon Process for electroless copper deposition
US20070119370A1 (en) * 2005-11-04 2007-05-31 Paul Ma Apparatus and process for plasma-enhanced atomic layer deposition
US20070194470A1 (en) * 2006-02-17 2007-08-23 Aviza Technology, Inc. Direct liquid injector device
US20070252299A1 (en) * 2006-04-27 2007-11-01 Applied Materials, Inc. Synchronization of precursor pulsing and wafer rotation
US20070259111A1 (en) * 2006-05-05 2007-11-08 Singh Kaushal K Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film
US7798096B2 (en) * 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
EP2047502A4 (en) * 2006-06-30 2009-12-30 Applied Materials Inc NANOCRYSTAL FORMATION
US7959986B2 (en) * 2006-08-09 2011-06-14 Praxair Technology, Inc. Organometallic compounds, processes for the preparation thereof and methods of use thereof
US7956207B2 (en) * 2006-09-28 2011-06-07 Praxair Technology, Inc. Heteroleptic organometallic compounds
EP1916253A1 (en) * 2006-10-26 2008-04-30 L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude New group V metal containing precursors and their use for metal containing film deposition
US20080099436A1 (en) * 2006-10-30 2008-05-01 Michael Grimbergen Endpoint detection for photomask etching
US8158526B2 (en) 2006-10-30 2012-04-17 Applied Materials, Inc. Endpoint detection for photomask etching
US7775508B2 (en) * 2006-10-31 2010-08-17 Applied Materials, Inc. Ampoule for liquid draw and vapor draw with a continuous level sensor
US7611751B2 (en) 2006-11-01 2009-11-03 Asm America, Inc. Vapor deposition of metal carbide films
TW200825200A (en) * 2006-12-05 2008-06-16 Advanced Tech Materials Metal aminotroponiminates, bis-oxazolinates and guanidinates
US7750173B2 (en) * 2007-01-18 2010-07-06 Advanced Technology Materials, Inc. Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
US8821637B2 (en) * 2007-01-29 2014-09-02 Applied Materials, Inc. Temperature controlled lid assembly for tungsten nitride deposition
US20100112211A1 (en) * 2007-04-12 2010-05-06 Advanced Technology Materials, Inc. Zirconium, hafnium, titanium, and silicon precursors for ald/cvd
US20100209610A1 (en) * 2007-07-16 2010-08-19 Advanced Technology Materials, Inc. Group iv complexes as cvd and ald precursors for forming metal-containing thin films
US7585762B2 (en) * 2007-09-25 2009-09-08 Applied Materials, Inc. Vapor deposition processes for tantalum carbide nitride materials
US7678298B2 (en) * 2007-09-25 2010-03-16 Applied Materials, Inc. Tantalum carbide nitride materials by vapor deposition processes
US7824743B2 (en) * 2007-09-28 2010-11-02 Applied Materials, Inc. Deposition processes for titanium nitride barrier and aluminum
US20090087561A1 (en) * 2007-09-28 2009-04-02 Advanced Technology Materials, Inc. Metal and metalloid silylamides, ketimates, tetraalkylguanidinates and dianionic guanidinates useful for cvd/ald of thin films
JP5551681B2 (ja) 2008-04-16 2014-07-16 エーエスエム アメリカ インコーポレイテッド アルミニウム炭化水素化合物を使用する金属炭化物膜の原子層堆積
US20090275164A1 (en) * 2008-05-02 2009-11-05 Advanced Technology Materials, Inc. Bicyclic guanidinates and bridging diamides as cvd/ald precursors
WO2010012595A1 (en) 2008-08-01 2010-02-04 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of forming a tantalum-containing layer on a substrate
US20100062149A1 (en) * 2008-09-08 2010-03-11 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
US8491967B2 (en) * 2008-09-08 2013-07-23 Applied Materials, Inc. In-situ chamber treatment and deposition process
ATE535534T1 (de) 2008-10-07 2011-12-15 Air Liquide Metall-organische niobium- und vanadium-vorläufer zur dünnschichtablagerung
US8146896B2 (en) * 2008-10-31 2012-04-03 Applied Materials, Inc. Chemical precursor ampoule for vapor deposition processes
WO2010065874A2 (en) 2008-12-05 2010-06-10 Atmi High concentration nitrogen-containing germanium telluride based memory devices and processes of making
US9012876B2 (en) 2010-03-26 2015-04-21 Entegris, Inc. Germanium antimony telluride materials and devices incorporating same
US9190609B2 (en) 2010-05-21 2015-11-17 Entegris, Inc. Germanium antimony telluride materials and devices incorporating same
US8778204B2 (en) 2010-10-29 2014-07-15 Applied Materials, Inc. Methods for reducing photoresist interference when monitoring a target layer in a plasma process
US8961804B2 (en) 2011-10-25 2015-02-24 Applied Materials, Inc. Etch rate detection for photomask etching
US8808559B2 (en) 2011-11-22 2014-08-19 Applied Materials, Inc. Etch rate detection for reflective multi-material layers etching
US8900469B2 (en) 2011-12-19 2014-12-02 Applied Materials, Inc. Etch rate detection for anti-reflective coating layer and absorber layer etching
WO2013192220A1 (en) * 2012-06-18 2013-12-27 University Of Florida Research Foundation, Inc. Tungsten nitrido precursors for the cvd of tungsten nitride, carbonitride, and oxide films
US9805939B2 (en) 2012-10-12 2017-10-31 Applied Materials, Inc. Dual endpoint detection for advanced phase shift and binary photomasks
CN103794596B (zh) * 2012-10-29 2016-08-10 中芯国际集成电路制造(上海)有限公司 标准晶片及其制造方法
US9640757B2 (en) 2012-10-30 2017-05-02 Entegris, Inc. Double self-aligned phase change memory device structure
US8778574B2 (en) 2012-11-30 2014-07-15 Applied Materials, Inc. Method for etching EUV material layers utilized to form a photomask
US9412602B2 (en) 2013-03-13 2016-08-09 Asm Ip Holding B.V. Deposition of smooth metal nitride films
US8846550B1 (en) 2013-03-14 2014-09-30 Asm Ip Holding B.V. Silane or borane treatment of metal thin films
US8841182B1 (en) 2013-03-14 2014-09-23 Asm Ip Holding B.V. Silane and borane treatments for titanium carbide films
US9394609B2 (en) 2014-02-13 2016-07-19 Asm Ip Holding B.V. Atomic layer deposition of aluminum fluoride thin films
US10643925B2 (en) 2014-04-17 2020-05-05 Asm Ip Holding B.V. Fluorine-containing conductive films
US10002936B2 (en) 2014-10-23 2018-06-19 Asm Ip Holding B.V. Titanium aluminum and tantalum aluminum thin films
US9941425B2 (en) 2015-10-16 2018-04-10 Asm Ip Holdings B.V. Photoactive devices and materials
US9786491B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US9786492B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
KR102378021B1 (ko) 2016-05-06 2022-03-23 에이에스엠 아이피 홀딩 비.브이. SiOC 박막의 형성
US10847529B2 (en) 2017-04-13 2020-11-24 Asm Ip Holding B.V. Substrate processing method and device manufactured by the same
US10504901B2 (en) 2017-04-26 2019-12-10 Asm Ip Holding B.V. Substrate processing method and device manufactured using the same
KR102627238B1 (ko) 2017-05-05 2024-01-19 에이에스엠 아이피 홀딩 비.브이. 산소 함유 박막의 형성을 제어하기 위한 플라즈마 강화 증착 공정
KR20190065962A (ko) 2017-12-04 2019-06-12 에이에스엠 아이피 홀딩 비.브이. 유전체와 금속 표면 상에 SiOC의 균일한 증착
US12359315B2 (en) 2019-02-14 2025-07-15 Asm Ip Holding B.V. Deposition of oxides and nitrides
US12341005B2 (en) 2020-01-17 2025-06-24 Asm Ip Holding B.V. Formation of SiCN thin films
US12142479B2 (en) 2020-01-17 2024-11-12 Asm Ip Holding B.V. Formation of SiOCN thin films
TW202200828A (zh) 2020-06-24 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 含鉬薄膜的氣相沉積

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2839421A (en) * 1955-04-06 1958-06-17 Du Pont An alkoxy aluminum chelate, a dispersion of it in an organic liquid and a water repellant porous object
GB976573A (en) * 1959-12-30 1964-11-25 Union Carbide Corp Improvements in and relating to metal plating
US3076834A (en) * 1960-03-04 1963-02-05 Dow Chemical Co Chelate-phenol adducts
US3288829A (en) * 1961-01-19 1966-11-29 Ethyl Corp Process for preparing cyclopentadienyl group vb and vib metal hydrides
US3437516A (en) * 1966-04-28 1969-04-08 Us Air Force Vapor deposition from perfluoroorganometallic compounds
US4147556A (en) * 1972-01-12 1979-04-03 Ppg Industries, Inc. Nonflammable beta diketonate composition
US3988332A (en) * 1974-05-20 1976-10-26 E. I. Du Pont De Nemours And Company Hydrocarbylidene compounds of niobium and tantalum
US4529427A (en) * 1977-05-19 1985-07-16 At&T Bell Laboratories Method for making low-loss optical waveguides on an industrial scale
US4401474A (en) * 1979-12-03 1983-08-30 Ppg Industries, Inc. Pyrolytic coating reactant for defect and durability control
US4281037A (en) * 1980-08-08 1981-07-28 Dap, Inc. Cleaning and priming composition containing titanium acetylacetonate and method
JPS58203443A (ja) * 1982-05-24 1983-11-26 Hitachi Ltd ホトマスクの白点欠陥修正用組成物
JPS60140880A (ja) * 1983-12-28 1985-07-25 Hitachi Ltd 太陽電池の製造方法
FR2575936B1 (fr) * 1985-01-15 1987-02-13 Rhone Poulenc Spec Chim Procede de purification de solutions aqueuses de sels de terres rares par extraction liquide-liquide
US4898842A (en) * 1986-03-03 1990-02-06 International Business Machines Corporation Organometallic-derived cordierite and other compounds comprising oxides of silicon
JP2729373B2 (ja) * 1987-01-07 1998-03-18 東京応化工業 株式会社 金属酸化膜形成用塗布液
US5034372A (en) * 1987-12-07 1991-07-23 Mitsubishi Denki Kabushiki Kaisha Plasma based method for production of superconductive oxide layers
JP2615469B2 (ja) * 1988-04-21 1997-05-28 松下電器産業株式会社 金属硫化物薄膜の製造方法
US5120703A (en) * 1990-04-17 1992-06-09 Alfred University Process for preparing oxide superconducting films by radio-frequency generated aerosol-plasma deposition in atmosphere
US5225561A (en) * 1990-07-06 1993-07-06 Advanced Technology Materials, Inc. Source reagent compounds for MOCVD of refractory films containing group IIA elements
US5280012A (en) * 1990-07-06 1994-01-18 Advanced Technology Materials Inc. Method of forming a superconducting oxide layer by MOCVD
US5711816A (en) * 1990-07-06 1998-01-27 Advanced Technolgy Materials, Inc. Source reagent liquid delivery apparatus, and chemical vapor deposition system comprising same
US5204314A (en) * 1990-07-06 1993-04-20 Advanced Technology Materials, Inc. Method for delivering an involatile reagent in vapor form to a CVD reactor
US5165960A (en) * 1991-07-29 1992-11-24 Ford Motor Company Deposition of magnesium fluoride films
US5376409B1 (en) * 1992-12-21 1997-06-03 Univ New York State Res Found Process and apparatus for the use of solid precursor sources in liquid form for vapor deposition of materials
US5412129A (en) * 1994-06-17 1995-05-02 Dicarolis; Stephen A. Stabilization of precursors for thin film deposition
US5591483A (en) * 1994-08-31 1997-01-07 Wayne State University Process for the preparation of metal nitride coatings from single source precursors
US5679815A (en) * 1994-09-16 1997-10-21 Advanced Technology Materials, Inc. Tantalum and niobium reagents useful in chemical vapor deposition processes, and process for depositing coatings using the same
US5668054A (en) * 1996-01-11 1997-09-16 United Microelectronics Corporation Process for fabricating tantalum nitride diffusion barrier for copper matallization

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10134582B2 (en) 2015-12-21 2018-11-20 Samsung Electronics Co., Ltd. Tantalum compound and methods of forming thin film and fabricating integrated circuit device by using the same
US10651031B2 (en) 2015-12-21 2020-05-12 Samsung Electronics Co., Ltd. Tantalum compound
WO2017116124A1 (ko) * 2015-12-28 2017-07-06 주식회사 유피케미칼 탄탈럼 화합물, 이의 제조 방법, 이를 포함하는 막 증착용 전구체 조성물, 및 이를 이용하는 막의 증착 방법

Also Published As

Publication number Publication date
AU2332199A (en) 1999-08-09
WO1999037655A1 (en) 1999-07-29
US6015917A (en) 2000-01-18
KR20010040324A (ko) 2001-05-15
GB0015192D0 (en) 2000-08-09
US6379748B1 (en) 2002-04-30
DE19982730C2 (de) 2002-01-31
KR20070086743A (ko) 2007-08-27
DE19982730T1 (de) 2001-07-26
GB2354762B (en) 2003-03-26
GB2354762A (en) 2001-04-04
JP2002501075A (ja) 2002-01-15

Similar Documents

Publication Publication Date Title
KR20080075561A (ko) 기판에 질화 탄탈륨을 침착시키기 위한 아미드화 탄탈륨전구체
US7838073B2 (en) Tantalum amide complexes for depositing tantalum-containing films, and method of making same
US6399208B1 (en) Source reagent composition and method for chemical vapor deposition formation or ZR/HF silicate gate dielectric thin films
US5187300A (en) Volatile precursors for copper CVD
TW467963B (en) Liquid precursor mixtures for deposition of multicomponent metal containing materials
US7754906B2 (en) Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides
US5866205A (en) Process for titanium nitride deposition using five- and six-coordinate titanium complexes
US5908947A (en) Difunctional amino precursors for the deposition of films comprising metals
US6350686B1 (en) Organometallic compound mixtures in chemical vapor deposition
US6102993A (en) Copper precursor composition and process for manufacture of microelectronic device structures
US6214729B1 (en) Metal complexes with chelating C-, N-donor ligands for forming metal-containing films
EP1640475A2 (en) Precursor compounds for deposition of ceramic and metal films and preparation methods thereof
US6979370B2 (en) Methods, complexes, and system for forming metal-containing films
US20090032952A1 (en) TANTALUM AMIDO-COMPLEXES WITH CHELATE LIGANDS USEFUL FOR CVD AND ALD OF TaN AND Ta205 THIN FILMS
KR100479519B1 (ko) 고접착성 구리 박막을 금속 질화물 기판 상에 증착시키는방법
US6589329B1 (en) Composition and process for production of copper circuitry in microelectronic device structures
KR100700632B1 (ko) 금속을 포함하는 박막의 화학기상증착 또는 원자층증착을위한 다용도 유기금속화합물과 그 제조방법
WO2025151572A1 (en) Group 2 metal containing film forming compositions and vapor deposition of the films using the same

Legal Events

Date Code Title Description
A107 Divisional application of patent
PA0104 Divisional application for international application

Comment text: Divisional Application for International Patent

Patent event code: PA01041R01D

Patent event date: 20080728

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20080826

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20081112

Patent event code: PE09021S01D

E601 Decision to refuse application
PE0601 Decision on rejection of patent

Patent event date: 20090708

Comment text: Decision to Refuse Application

Patent event code: PE06012S01D

Patent event date: 20081112

Comment text: Notification of reason for refusal

Patent event code: PE06011S01I