KR20080045652A - 반도체 디바이스에 금속 함유 필름을 집적하는 방법 - Google Patents

반도체 디바이스에 금속 함유 필름을 집적하는 방법 Download PDF

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Publication number
KR20080045652A
KR20080045652A KR1020070118450A KR20070118450A KR20080045652A KR 20080045652 A KR20080045652 A KR 20080045652A KR 1020070118450 A KR1020070118450 A KR 1020070118450A KR 20070118450 A KR20070118450 A KR 20070118450A KR 20080045652 A KR20080045652 A KR 20080045652A
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South Korea
Prior art keywords
substrate
containing film
film
metal
tungsten
Prior art date
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Ceased
Application number
KR1020070118450A
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English (en)
Korean (ko)
Inventor
시게오 아시가키
히데아키 야마사키
도모유키 사코다
미키오 스즈키
겐지 나카무라
게리트 제이 레우싱크
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication date
Application filed by 도쿄엘렉트론가부시키가이샤 filed Critical 도쿄엘렉트론가부시키가이샤
Publication of KR20080045652A publication Critical patent/KR20080045652A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01316—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of elemental metal contacting the insulator, e.g. Ta, W, Mo or Al
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum
    • H10D64/666—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum the conductor further comprising additional layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/418—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials the conductive layers comprising transition metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]

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  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020070118450A 2006-11-20 2007-11-20 반도체 디바이스에 금속 함유 필름을 집적하는 방법 Ceased KR20080045652A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/561,810 US7674710B2 (en) 2006-11-20 2006-11-20 Method of integrating metal-containing films into semiconductor devices
US11/561,810 2006-11-20

Publications (1)

Publication Number Publication Date
KR20080045652A true KR20080045652A (ko) 2008-05-23

Family

ID=39417437

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070118450A Ceased KR20080045652A (ko) 2006-11-20 2007-11-20 반도체 디바이스에 금속 함유 필름을 집적하는 방법

Country Status (3)

Country Link
US (1) US7674710B2 (https=)
JP (1) JP2008131050A (https=)
KR (1) KR20080045652A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101414849B1 (ko) * 2011-09-26 2014-07-03 다이닛뽕스크린 세이조오 가부시키가이샤 열처리방법 및 열처리장치

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110005880A (ko) 2008-05-19 2011-01-19 닛본 덴끼 가부시끼가이샤 2 차 전지
CN102112649A (zh) * 2008-08-05 2011-06-29 东京毅力科创株式会社 载置台构造
US8866271B2 (en) * 2010-10-07 2014-10-21 Hitachi Kokusai Electric Inc. Semiconductor device manufacturing method, substrate processing apparatus and semiconductor device
US8822350B2 (en) 2010-11-19 2014-09-02 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, substrate processing method and substrate processing apparatus
KR20140003154A (ko) * 2012-06-29 2014-01-09 에스케이하이닉스 주식회사 반도체 장치 제조 방법
US11043386B2 (en) 2012-10-26 2021-06-22 Applied Materials, Inc. Enhanced spatial ALD of metals through controlled precursor mixing
US9230815B2 (en) 2012-10-26 2016-01-05 Appled Materials, Inc. Methods for depositing fluorine/carbon-free conformal tungsten
JP6308584B2 (ja) * 2013-02-28 2018-04-11 株式会社日立国際電気 半導体装置の製造方法、基板処理装置、基板処理システム及びプログラム
US11761081B2 (en) 2018-10-10 2023-09-19 Entegris, Inc. Methods for depositing tungsten or molybdenum films
JP7539480B2 (ja) * 2020-09-23 2024-08-23 株式会社Kokusai Electric 基板処理方法、プログラム、基板処理装置及び半導体装置の製造方法

Family Cites Families (12)

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JPH02225670A (ja) * 1989-02-23 1990-09-07 Toyota Motor Corp Ｃｖｄ法による金属薄膜の成膜方法
JPH0427136A (ja) * 1990-04-11 1992-01-30 Mitsubishi Electric Corp 有機金属ガス利用薄膜形成装置
JP2726149B2 (ja) * 1990-11-02 1998-03-11 三菱電機株式会社 薄膜形成装置
US5789312A (en) * 1996-10-30 1998-08-04 International Business Machines Corporation Method of fabricating mid-gap metal gates compatible with ultra-thin dielectrics
US6218301B1 (en) * 2000-07-31 2001-04-17 Applied Materials, Inc. Deposition of tungsten films from W(CO)6
JP3786569B2 (ja) * 2000-08-14 2006-06-14 松下電器産業株式会社 半導体装置の製造方法
US20020132473A1 (en) * 2001-03-13 2002-09-19 Applied Materials ,Inc. Integrated barrier layer structure for copper contact level metallization
JP4126219B2 (ja) * 2002-11-06 2008-07-30 東京エレクトロン株式会社 成膜方法
JP2005243664A (ja) * 2004-02-24 2005-09-08 Renesas Technology Corp 半導体装置およびその製造方法
US7189431B2 (en) * 2004-09-30 2007-03-13 Tokyo Electron Limited Method for forming a passivated metal layer
JP4372021B2 (ja) * 2005-01-28 2009-11-25 株式会社東芝 半導体装置の製造方法
JP2006257551A (ja) * 2005-03-15 2006-09-28 Asm Internatl Nv Ａｌｄによる貴金属の促進された堆積

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101414849B1 (ko) * 2011-09-26 2014-07-03 다이닛뽕스크린 세이조오 가부시키가이샤 열처리방법 및 열처리장치
US8852966B2 (en) 2011-09-26 2014-10-07 Dainippon Screen Mfg. Co., Ltd. Heat treatment method and heat treatment apparatus of thin film

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Publication number Publication date
US7674710B2 (en) 2010-03-09
US20080119033A1 (en) 2008-05-22
JP2008131050A (ja) 2008-06-05

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