KR20070110390A - 막두께 모니터링을 위한 헤테로다인 반사계 및 실행방법 - Google Patents

막두께 모니터링을 위한 헤테로다인 반사계 및 실행방법 Download PDF

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Publication number
KR20070110390A
KR20070110390A KR1020077022039A KR20077022039A KR20070110390A KR 20070110390 A KR20070110390 A KR 20070110390A KR 1020077022039 A KR1020077022039 A KR 1020077022039A KR 20077022039 A KR20077022039 A KR 20077022039A KR 20070110390 A KR20070110390 A KR 20070110390A
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KR
South Korea
Prior art keywords
phase shift
thickness
signal
frequency
polarization beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020077022039A
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English (en)
Korean (ko)
Inventor
아룬 아난스 아이어 아이어
마크 에이. 메로니
케네스 씨. 하르베이
앤드류 윅스 쿠에니
Original Assignee
베러티 인스트루먼트, 인코퍼레이티드
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Publication date
Priority claimed from US11/066,933 external-priority patent/US7339682B2/en
Application filed by 베러티 인스트루먼트, 인코퍼레이티드 filed Critical 베러티 인스트루먼트, 인코퍼레이티드
Publication of KR20070110390A publication Critical patent/KR20070110390A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B2290/00—Aspects of interferometers not specifically covered by any group under G01B9/02
    • G01B2290/30—Grating as beam-splitter

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
KR1020077022039A 2005-02-25 2006-02-21 막두께 모니터링을 위한 헤테로다인 반사계 및 실행방법 Ceased KR20070110390A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US11/066,933 2005-02-25
US11/066,933 US7339682B2 (en) 2005-02-25 2005-02-25 Heterodyne reflectometer for film thickness monitoring and method for implementing
US11/178,856 2005-07-10
US11/178,856 US20060285120A1 (en) 2005-02-25 2005-07-10 Method for monitoring film thickness using heterodyne reflectometry and grating interferometry

Publications (1)

Publication Number Publication Date
KR20070110390A true KR20070110390A (ko) 2007-11-16

Family

ID=36941619

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077022039A Ceased KR20070110390A (ko) 2005-02-25 2006-02-21 막두께 모니터링을 위한 헤테로다인 반사계 및 실행방법

Country Status (5)

Country Link
US (1) US20060285120A1 (cg-RX-API-DMAC7.html)
JP (1) JP4819065B2 (cg-RX-API-DMAC7.html)
KR (1) KR20070110390A (cg-RX-API-DMAC7.html)
TW (1) TWI285257B (cg-RX-API-DMAC7.html)
WO (1) WO2006093709A2 (cg-RX-API-DMAC7.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9583402B2 (en) 2014-07-28 2017-02-28 Samsung Electronics Co., Ltd. Method of manufacturing a semiconductor device using semiconductor measurement system
KR20200118218A (ko) * 2018-02-28 2020-10-14 지고 코포레이션 다층 스택의 계측
US20220107178A1 (en) * 2019-02-20 2022-04-07 Stefan Böttger Method and Apparatus for Determining a Layer Thickness of a Layer Applied to a Substrate

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070059849A1 (en) * 2005-09-12 2007-03-15 Interuniversitair Microelktronica Centrum (Imec) Method and system for BARC optimization for high numerical aperture applications
US7781349B2 (en) * 2005-09-12 2010-08-24 Imec Method and system for optimizing a BARC stack
US7589843B2 (en) * 2005-09-27 2009-09-15 Verity Instruments, Inc. Self referencing heterodyne reflectometer and method for implementing
US7823440B2 (en) * 2007-08-16 2010-11-02 Micron Technology, Inc. Systems and methods for characterizing thickness and topography of microelectronic workpiece layers
US20100122456A1 (en) * 2008-11-17 2010-05-20 Chen-Hua Yu Integrated Alignment and Bonding System
KR101126382B1 (ko) * 2010-05-10 2012-03-28 주식회사 케이씨텍 화학 기계식 연마시스템의 컨디셔너
US8908161B2 (en) * 2011-08-25 2014-12-09 Palo Alto Research Center Incorporated Removing aluminum nitride sections
US9400172B2 (en) * 2011-10-26 2016-07-26 Mitsubishi Electric Corporation Film thickness measurement method
JP6079697B2 (ja) * 2013-07-11 2017-02-15 株式会社村田製作所 電子部品の厚さ測定方法、これを用いる電子部品連の製造方法、これによって製造された電子部品連、および、電子部品の検査装置
WO2017211545A1 (en) * 2016-06-09 2017-12-14 Asml Netherlands B.V. Metrology apparatus
JP6800800B2 (ja) * 2017-04-06 2020-12-16 株式会社ニューフレアテクノロジー 成長速度測定装置および成長速度検出方法
JP6285597B1 (ja) * 2017-06-05 2018-02-28 大塚電子株式会社 光学測定装置および光学測定方法
JP6919458B2 (ja) * 2017-09-26 2021-08-18 オムロン株式会社 変位計測装置、計測システム、および変位計測方法
CN110715931B (zh) * 2019-10-29 2022-04-12 上海御微半导体技术有限公司 一种透明样品缺陷自动检测方法和检测装置
CN114787580B (zh) 2019-11-26 2024-06-04 浜松光子学株式会社 光学单元及膜厚测量装置
IL307209B2 (en) 2021-03-26 2024-09-01 Arun Anath Aiyer Optical sensor for surface inspection and metrology
CN114894712B (zh) * 2022-03-25 2023-08-25 业成科技（成都）有限公司 光学量测设备及其校正方法
CN115451839A (zh) * 2022-08-25 2022-12-09 中钞印制技术研究院有限公司 安全产品表面涂层厚度的检测方法
TWI812482B (zh) * 2022-09-23 2023-08-11 中國鋼鐵股份有限公司 旋轉機械系統與平衡方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4688940A (en) * 1985-03-12 1987-08-25 Zygo Corporation Heterodyne interferometer system
JPS63128211A (ja) * 1986-11-19 1988-05-31 Hitachi Ltd スペ−シング測定方法
JPH0221203A (ja) * 1988-07-09 1990-01-24 Brother Ind Ltd 位相差検出装置
JP3042225B2 (ja) * 1992-10-30 2000-05-15 キヤノン株式会社 表面状態検査方法及びそれを用いた表面状態検査装置
US5450205A (en) * 1993-05-28 1995-09-12 Massachusetts Institute Of Technology Apparatus and method for real-time measurement of thin film layer thickness and changes thereof
US5548401A (en) * 1993-08-23 1996-08-20 Nippon Telegraph And Telephone Public Corporation Photomask inspecting method and apparatus
FR2716531B1 (fr) * 1994-02-18 1996-05-03 Saint Gobain Cinematique Contr Procédé de mesure d'épaisseur d'un matériau transparent.
CN1131741A (zh) * 1995-03-22 1996-09-25 载歌公司 光学间隙测量装置和方法
US6172752B1 (en) * 1996-08-04 2001-01-09 Matsushita Electric Industrial Co., Ltd. Method and apparatus for simultaneously interferometrically measuring optical characteristics in a noncontact manner
FR2780778B3 (fr) * 1998-07-03 2000-08-11 Saint Gobain Vitrage Procede et dispositif pour la mesure de l'epaisseur d'un materiau transparent
US6261152B1 (en) * 1998-07-16 2001-07-17 Nikon Research Corporation Of America Heterdoyne Thickness Monitoring System
US6710881B1 (en) * 1999-09-28 2004-03-23 Nanyang Technological University Heterodyne interferometry for small spacing measurement
US7339682B2 (en) * 2005-02-25 2008-03-04 Verity Instruments, Inc. Heterodyne reflectometer for film thickness monitoring and method for implementing

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9583402B2 (en) 2014-07-28 2017-02-28 Samsung Electronics Co., Ltd. Method of manufacturing a semiconductor device using semiconductor measurement system
KR20200118218A (ko) * 2018-02-28 2020-10-14 지고 코포레이션 다층 스택의 계측
US20220107178A1 (en) * 2019-02-20 2022-04-07 Stefan Böttger Method and Apparatus for Determining a Layer Thickness of a Layer Applied to a Substrate

Also Published As

Publication number Publication date
TWI285257B (en) 2007-08-11
TW200710370A (en) 2007-03-16
JP2008533447A (ja) 2008-08-21
US20060285120A1 (en) 2006-12-21
WO2006093709A2 (en) 2006-09-08
JP4819065B2 (ja) 2011-11-16
WO2006093709A3 (en) 2007-05-31

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