KR20070095362A - 노광 방법, 요철 패턴의 형성 방법, 및 광학 소자의 제조방법 - Google Patents

노광 방법, 요철 패턴의 형성 방법, 및 광학 소자의 제조방법 Download PDF

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Publication number
KR20070095362A
KR20070095362A KR1020077016977A KR20077016977A KR20070095362A KR 20070095362 A KR20070095362 A KR 20070095362A KR 1020077016977 A KR1020077016977 A KR 1020077016977A KR 20077016977 A KR20077016977 A KR 20077016977A KR 20070095362 A KR20070095362 A KR 20070095362A
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KR
South Korea
Prior art keywords
substrate
exposure
laser beam
stamper
manufacturing
Prior art date
Application number
KR1020077016977A
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English (en)
Korean (ko)
Inventor
요시히토 호도사와
지카라 에가미
Original Assignee
후지필름 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 후지필름 가부시키가이샤 filed Critical 후지필름 가부시키가이샤
Publication of KR20070095362A publication Critical patent/KR20070095362A/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020077016977A 2005-01-24 2006-01-24 노광 방법, 요철 패턴의 형성 방법, 및 광학 소자의 제조방법 KR20070095362A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00015799 2005-01-24
JP2005015799 2005-01-24

Publications (1)

Publication Number Publication Date
KR20070095362A true KR20070095362A (ko) 2007-09-28

Family

ID=36692432

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077016977A KR20070095362A (ko) 2005-01-24 2006-01-24 노광 방법, 요철 패턴의 형성 방법, 및 광학 소자의 제조방법

Country Status (4)

Country Link
EP (1) EP1842100A4 (de)
KR (1) KR20070095362A (de)
CN (1) CN101133365B (de)
WO (1) WO2006078073A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101154779B1 (ko) * 2011-03-11 2012-06-18 하이디스 테크놀로지 주식회사 포토 리소그래피 방법

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2920554A1 (fr) * 2007-08-31 2009-03-06 Commissariat Energie Atomique Procede de lithographie d'une image par ecriture directe continue
JP5336793B2 (ja) * 2008-08-29 2013-11-06 富士フイルム株式会社 パターン形成体の製造方法および電磁ビーム加工装置
GB201016046D0 (en) * 2010-09-24 2010-11-10 Renishaw Plc A method of forming an optical device
CN107290934B (zh) * 2016-04-01 2018-09-11 川宝科技股份有限公司 曝光机的扫描光源的控制方法及电脑程序产品

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0410614A (ja) * 1990-04-27 1992-01-14 Ntn Corp レーザ描画装置
US6013401A (en) * 1997-03-31 2000-01-11 Svg Lithography Systems, Inc. Method of controlling illumination field to reduce line width variation
JP2000210782A (ja) 1998-02-19 2000-08-02 Ricoh Microelectronics Co Ltd 加工方法及びその装置
JP2001144009A (ja) * 1999-11-18 2001-05-25 Nikon Corp 露光方法及び露光装置、並びにデバイス製造方法
US6555783B2 (en) * 2000-02-03 2003-04-29 Canon Kabushiki Kaisha Laser processing method and laser processing apparatus
JP2001212799A (ja) * 2000-02-03 2001-08-07 Canon Inc レーザ加工方法
JP2001338445A (ja) * 2000-05-25 2001-12-07 Nippon Columbia Co Ltd スタンパ製造方法、光記録媒体製造方法及び支持板
US20030071016A1 (en) * 2001-10-11 2003-04-17 Wu-Sheng Shih Patterned structure reproduction using nonsticking mold
JP2004134590A (ja) * 2002-10-10 2004-04-30 National Institute For Materials Science 粒子線描画パターン高精度化法
JP4363837B2 (ja) * 2002-11-07 2009-11-11 大日本印刷株式会社 曲面への微細な凹凸の形成方法、及び光学部材

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101154779B1 (ko) * 2011-03-11 2012-06-18 하이디스 테크놀로지 주식회사 포토 리소그래피 방법

Also Published As

Publication number Publication date
EP1842100A1 (de) 2007-10-10
WO2006078073A1 (en) 2006-07-27
CN101133365A (zh) 2008-02-27
CN101133365B (zh) 2010-08-11
EP1842100A4 (de) 2009-04-29

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