KR20070089883A - 펄스화된 ｒｆ 소스 전력을 이용하는 플라즈마 게이트 산화프로세스 - Google Patents

펄스화된 ｒｆ 소스 전력을 이용하는 플라즈마 게이트 산화프로세스 Download PDF

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Publication number
KR20070089883A
KR20070089883A KR1020077017552A KR20077017552A KR20070089883A KR 20070089883 A KR20070089883 A KR 20070089883A KR 1020077017552 A KR1020077017552 A KR 1020077017552A KR 20077017552 A KR20077017552 A KR 20077017552A KR 20070089883 A KR20070089883 A KR 20070089883A
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KR
South Korea
Prior art keywords
plasma
duty cycle
gate
insulating layer
limiting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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KR1020077017552A
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English (en)
Korean (ko)
Inventor
타이 쳉 추아
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20070089883A publication Critical patent/KR20070089883A/ko
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01338—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020077017552A 2005-02-02 2006-01-30 펄스화된 ｒｆ 소스 전력을 이용하는 플라즈마 게이트 산화프로세스 Abandoned KR20070089883A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/050,472 2005-02-02
US11/050,472 US7214628B2 (en) 2005-02-02 2005-02-02 Plasma gate oxidation process using pulsed RF source power

Publications (1)

Publication Number Publication Date
KR20070089883A true KR20070089883A (ko) 2007-09-03

Family

ID=36757158

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077017552A Abandoned KR20070089883A (ko) 2005-02-02 2006-01-30 펄스화된 ｒｆ 소스 전력을 이용하는 플라즈마 게이트 산화프로세스

Country Status (5)

Country Link
US (1) US7214628B2 (https=)
EP (1) EP1851788A4 (https=)
JP (1) JP5172353B2 (https=)
KR (1) KR20070089883A (https=)
WO (1) WO2006083858A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101341534B1 (ko) * 2011-07-27 2013-12-13 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마 처리 방법 및 플라즈마 처리 장치

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080011426A1 (en) * 2006-01-30 2008-01-17 Applied Materials, Inc. Plasma reactor with inductively coupled source power applicator and a high temperature heated workpiece support
US20080230008A1 (en) * 2007-03-21 2008-09-25 Alexander Paterson Plasma species and uniformity control through pulsed vhf operation
US7645709B2 (en) * 2007-07-30 2010-01-12 Applied Materials, Inc. Methods for low temperature oxidation of a semiconductor device
US20090104761A1 (en) * 2007-10-19 2009-04-23 Varian Semiconductor Equipment Associates, Inc. Plasma Doping System With Charge Control
WO2009114617A1 (en) * 2008-03-14 2009-09-17 Applied Materials, Inc. Methods for oxidation of a semiconductor device
DE102008036766B4 (de) 2008-08-07 2013-08-01 Alexander Gschwandtner Vorrichtung und Verfahren zum Erzeugen dielektrischer Schichten im Mikrowellenplasma
US8043981B2 (en) * 2009-04-21 2011-10-25 Applied Materials, Inc. Dual frequency low temperature oxidation of a semiconductor device
US20100297854A1 (en) * 2009-04-22 2010-11-25 Applied Materials, Inc. High throughput selective oxidation of silicon and polysilicon using plasma at room temperature
US8659335B2 (en) 2009-06-25 2014-02-25 Mks Instruments, Inc. Method and system for controlling radio frequency power
KR101893471B1 (ko) * 2011-02-15 2018-08-30 어플라이드 머티어리얼스, 인코포레이티드 멀티존 플라즈마 생성을 위한 방법 및 장치
US9401396B2 (en) * 2011-04-19 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device and plasma oxidation treatment method
KR102028779B1 (ko) 2012-02-13 2019-10-04 어플라이드 머티어리얼스, 인코포레이티드 기판의 선택적 산화를 위한 방법 및 장치
US9978606B2 (en) 2015-10-02 2018-05-22 Applied Materials, Inc. Methods for atomic level resolution and plasma processing control
US9788405B2 (en) 2015-10-03 2017-10-10 Applied Materials, Inc. RF power delivery with approximated saw tooth wave pulsing
US9741539B2 (en) 2015-10-05 2017-08-22 Applied Materials, Inc. RF power delivery regulation for processing substrates
US9754767B2 (en) 2015-10-13 2017-09-05 Applied Materials, Inc. RF pulse reflection reduction for processing substrates
US9614524B1 (en) 2015-11-28 2017-04-04 Applied Materials, Inc. Automatic impedance tuning with RF dual level pulsing

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4500563A (en) 1982-12-15 1985-02-19 Pacific Western Systems, Inc. Independently variably controlled pulsed R.F. plasma chemical vapor processing
US5312778A (en) * 1989-10-03 1994-05-17 Applied Materials, Inc. Method for plasma processing using magnetically enhanced plasma chemical vapor deposition
US5531834A (en) 1993-07-13 1996-07-02 Tokyo Electron Kabushiki Kaisha Plasma film forming method and apparatus and plasma processing apparatus
JP3350246B2 (ja) * 1994-09-30 2002-11-25 株式会社東芝 半導体装置の製造方法
JP3546977B2 (ja) * 1994-10-14 2004-07-28 富士通株式会社 半導体装置の製造方法と製造装置
JP2845163B2 (ja) 1994-10-27 1999-01-13 日本電気株式会社 プラズマ処理方法及びその装置
JPH0974196A (ja) * 1995-09-06 1997-03-18 Ricoh Co Ltd 半導体装置の製造方法
JP3411559B2 (ja) 1997-07-28 2003-06-03 マサチューセッツ・インスティチュート・オブ・テクノロジー シリコーン膜の熱分解化学蒸着法
JP3141827B2 (ja) 1997-11-20 2001-03-07 日本電気株式会社 半導体装置の製造方法
US6187682B1 (en) * 1998-05-26 2001-02-13 Motorola Inc. Inert plasma gas surface cleaning process performed insitu with physical vapor deposition (PVD) of a layer of material
US6355580B1 (en) 1998-09-03 2002-03-12 Micron Technology, Inc. Ion-assisted oxidation methods and the resulting structures
US6566272B2 (en) 1999-07-23 2003-05-20 Applied Materials Inc. Method for providing pulsed plasma during a portion of a semiconductor wafer process
WO2002075801A2 (en) * 2000-11-07 2002-09-26 Tokyo Electron Limited Method of fabricating oxides with low defect densities
US6458714B1 (en) * 2000-11-22 2002-10-01 Micron Technology, Inc. Method of selective oxidation in semiconductor manufacture
US6777037B2 (en) 2001-02-21 2004-08-17 Hitachi, Ltd. Plasma processing method and apparatus
US20030013314A1 (en) * 2001-07-06 2003-01-16 Chentsau Ying Method of reducing particulates in a plasma etch chamber during a metal etch process
JP4001498B2 (ja) * 2002-03-29 2007-10-31 東京エレクトロン株式会社 絶縁膜の形成方法及び絶縁膜の形成システム
JP2005530341A (ja) * 2002-06-12 2005-10-06 アプライド　マテリアルズ　インコーポレイテッド 基板を処理するためのプラズマ方法及び装置
US20040137243A1 (en) 2002-10-21 2004-07-15 Massachusetts Institute Of Technology Chemical vapor deposition of organosilicate thin films
US6689646B1 (en) * 2002-11-14 2004-02-10 Sharp Laboratories Of America, Inc. Plasma method for fabricating oxide thin films

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101341534B1 (ko) * 2011-07-27 2013-12-13 가부시키가이샤 히다치 하이테크놀로지즈 플라즈마 처리 방법 및 플라즈마 처리 장치
US8828254B2 (en) 2011-07-27 2014-09-09 Hitachi High-Technologies Corporation Plasma processing method
TWI500066B (zh) * 2011-07-27 2015-09-11 日立全球先端科技股份有限公司 Plasma processing device
US9349603B2 (en) 2011-07-27 2016-05-24 Hitachi High-Technologies Corporation Plasma processing method
US10600619B2 (en) 2011-07-27 2020-03-24 Hitachi High-Technologies Corporation Plasma processing apparatus
US11658011B2 (en) 2011-07-27 2023-05-23 Hitachi High-Tech Corporation Plasma processing apparatus

Also Published As

Publication number Publication date
EP1851788A2 (en) 2007-11-07
EP1851788A4 (en) 2009-06-17
JP2008530783A (ja) 2008-08-07
WO2006083858A2 (en) 2006-08-10
US20060172551A1 (en) 2006-08-03
WO2006083858A3 (en) 2007-02-01
JP5172353B2 (ja) 2013-03-27
US7214628B2 (en) 2007-05-08

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