JP5172353B2 - パルス化高周波源電力を使用するプラズマゲート酸化プロセス - Google Patents

パルス化高周波源電力を使用するプラズマゲート酸化プロセス Download PDF

Info

Publication number
JP5172353B2
JP5172353B2 JP2007554165A JP2007554165A JP5172353B2 JP 5172353 B2 JP5172353 B2 JP 5172353B2 JP 2007554165 A JP2007554165 A JP 2007554165A JP 2007554165 A JP2007554165 A JP 2007554165A JP 5172353 B2 JP5172353 B2 JP 5172353B2
Authority
JP
Japan
Prior art keywords
plasma
oxide
limiting
duty cycle
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007554165A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008530783A5 (https=
JP2008530783A (ja
Inventor
タイ， チェン シュア，
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2008530783A publication Critical patent/JP2008530783A/ja
Publication of JP2008530783A5 publication Critical patent/JP2008530783A5/ja
Application granted granted Critical
Publication of JP5172353B2 publication Critical patent/JP5172353B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01338—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2007554165A 2005-02-02 2006-01-30 パルス化高周波源電力を使用するプラズマゲート酸化プロセス Expired - Fee Related JP5172353B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/050,472 2005-02-02
US11/050,472 US7214628B2 (en) 2005-02-02 2005-02-02 Plasma gate oxidation process using pulsed RF source power
PCT/US2006/003388 WO2006083858A2 (en) 2005-02-02 2006-01-30 Plasma gate oxidation process using pulsed rf source power

Publications (3)

Publication Number Publication Date
JP2008530783A JP2008530783A (ja) 2008-08-07
JP2008530783A5 JP2008530783A5 (https=) 2012-09-13
JP5172353B2 true JP5172353B2 (ja) 2013-03-27

Family

ID=36757158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007554165A Expired - Fee Related JP5172353B2 (ja) 2005-02-02 2006-01-30 パルス化高周波源電力を使用するプラズマゲート酸化プロセス

Country Status (5)

Country Link
US (1) US7214628B2 (https=)
EP (1) EP1851788A4 (https=)
JP (1) JP5172353B2 (https=)
KR (1) KR20070089883A (https=)
WO (1) WO2006083858A2 (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080011426A1 (en) * 2006-01-30 2008-01-17 Applied Materials, Inc. Plasma reactor with inductively coupled source power applicator and a high temperature heated workpiece support
US20080230008A1 (en) * 2007-03-21 2008-09-25 Alexander Paterson Plasma species and uniformity control through pulsed vhf operation
US7645709B2 (en) * 2007-07-30 2010-01-12 Applied Materials, Inc. Methods for low temperature oxidation of a semiconductor device
US20090104761A1 (en) * 2007-10-19 2009-04-23 Varian Semiconductor Equipment Associates, Inc. Plasma Doping System With Charge Control
WO2009114617A1 (en) * 2008-03-14 2009-09-17 Applied Materials, Inc. Methods for oxidation of a semiconductor device
DE102008036766B4 (de) 2008-08-07 2013-08-01 Alexander Gschwandtner Vorrichtung und Verfahren zum Erzeugen dielektrischer Schichten im Mikrowellenplasma
US8043981B2 (en) * 2009-04-21 2011-10-25 Applied Materials, Inc. Dual frequency low temperature oxidation of a semiconductor device
US20100297854A1 (en) * 2009-04-22 2010-11-25 Applied Materials, Inc. High throughput selective oxidation of silicon and polysilicon using plasma at room temperature
US8659335B2 (en) 2009-06-25 2014-02-25 Mks Instruments, Inc. Method and system for controlling radio frequency power
KR101893471B1 (ko) * 2011-02-15 2018-08-30 어플라이드 머티어리얼스, 인코포레이티드 멀티존 플라즈마 생성을 위한 방법 및 장치
US9401396B2 (en) * 2011-04-19 2016-07-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device and plasma oxidation treatment method
TWI450308B (zh) 2011-07-27 2014-08-21 日立全球先端科技股份有限公司 Plasma processing method
KR102028779B1 (ko) 2012-02-13 2019-10-04 어플라이드 머티어리얼스, 인코포레이티드 기판의 선택적 산화를 위한 방법 및 장치
US9978606B2 (en) 2015-10-02 2018-05-22 Applied Materials, Inc. Methods for atomic level resolution and plasma processing control
US9788405B2 (en) 2015-10-03 2017-10-10 Applied Materials, Inc. RF power delivery with approximated saw tooth wave pulsing
US9741539B2 (en) 2015-10-05 2017-08-22 Applied Materials, Inc. RF power delivery regulation for processing substrates
US9754767B2 (en) 2015-10-13 2017-09-05 Applied Materials, Inc. RF pulse reflection reduction for processing substrates
US9614524B1 (en) 2015-11-28 2017-04-04 Applied Materials, Inc. Automatic impedance tuning with RF dual level pulsing

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4500563A (en) 1982-12-15 1985-02-19 Pacific Western Systems, Inc. Independently variably controlled pulsed R.F. plasma chemical vapor processing
US5312778A (en) * 1989-10-03 1994-05-17 Applied Materials, Inc. Method for plasma processing using magnetically enhanced plasma chemical vapor deposition
US5531834A (en) 1993-07-13 1996-07-02 Tokyo Electron Kabushiki Kaisha Plasma film forming method and apparatus and plasma processing apparatus
JP3350246B2 (ja) * 1994-09-30 2002-11-25 株式会社東芝 半導体装置の製造方法
JP3546977B2 (ja) * 1994-10-14 2004-07-28 富士通株式会社 半導体装置の製造方法と製造装置
JP2845163B2 (ja) 1994-10-27 1999-01-13 日本電気株式会社 プラズマ処理方法及びその装置
JPH0974196A (ja) * 1995-09-06 1997-03-18 Ricoh Co Ltd 半導体装置の製造方法
JP3411559B2 (ja) 1997-07-28 2003-06-03 マサチューセッツ・インスティチュート・オブ・テクノロジー シリコーン膜の熱分解化学蒸着法
JP3141827B2 (ja) 1997-11-20 2001-03-07 日本電気株式会社 半導体装置の製造方法
US6187682B1 (en) * 1998-05-26 2001-02-13 Motorola Inc. Inert plasma gas surface cleaning process performed insitu with physical vapor deposition (PVD) of a layer of material
US6355580B1 (en) 1998-09-03 2002-03-12 Micron Technology, Inc. Ion-assisted oxidation methods and the resulting structures
US6566272B2 (en) 1999-07-23 2003-05-20 Applied Materials Inc. Method for providing pulsed plasma during a portion of a semiconductor wafer process
WO2002075801A2 (en) * 2000-11-07 2002-09-26 Tokyo Electron Limited Method of fabricating oxides with low defect densities
US6458714B1 (en) * 2000-11-22 2002-10-01 Micron Technology, Inc. Method of selective oxidation in semiconductor manufacture
US6777037B2 (en) 2001-02-21 2004-08-17 Hitachi, Ltd. Plasma processing method and apparatus
US20030013314A1 (en) * 2001-07-06 2003-01-16 Chentsau Ying Method of reducing particulates in a plasma etch chamber during a metal etch process
JP4001498B2 (ja) * 2002-03-29 2007-10-31 東京エレクトロン株式会社 絶縁膜の形成方法及び絶縁膜の形成システム
JP2005530341A (ja) * 2002-06-12 2005-10-06 アプライド　マテリアルズ　インコーポレイテッド 基板を処理するためのプラズマ方法及び装置
US20040137243A1 (en) 2002-10-21 2004-07-15 Massachusetts Institute Of Technology Chemical vapor deposition of organosilicate thin films
US6689646B1 (en) * 2002-11-14 2004-02-10 Sharp Laboratories Of America, Inc. Plasma method for fabricating oxide thin films

Also Published As

Publication number Publication date
KR20070089883A (ko) 2007-09-03
EP1851788A2 (en) 2007-11-07
EP1851788A4 (en) 2009-06-17
JP2008530783A (ja) 2008-08-07
WO2006083858A2 (en) 2006-08-10
US20060172551A1 (en) 2006-08-03
WO2006083858A3 (en) 2007-02-01
US7214628B2 (en) 2007-05-08

Similar Documents

Publication Publication Date Title
JP5172352B2 (ja) パルス化高周波源電力を使用する選択プラズマ再酸化プロセス
JP5172353B2 (ja) パルス化高周波源電力を使用するプラズマゲート酸化プロセス
US7645709B2 (en) Methods for low temperature oxidation of a semiconductor device
US10566206B2 (en) Systems and methods for anisotropic material breakthrough
US9190290B2 (en) Halogen-free gas-phase silicon etch
US8043981B2 (en) Dual frequency low temperature oxidation of a semiconductor device
KR102264784B1 (ko) 고 밀도 저 에너지 플라즈마에 의한 반도체 표면들의 인터페이스 처리
US20140342569A1 (en) Near surface etch selectivity enhancement
US20080011426A1 (en) Plasma reactor with inductively coupled source power applicator and a high temperature heated workpiece support
US20100297854A1 (en) High throughput selective oxidation of silicon and polysilicon using plasma at room temperature
CN101401194B (zh) 使用低能量等离子体系统制造高介电常数晶体管栅极的方法和装置
JPWO2005076336A1 (ja) 半導体装置の製造方法および絶縁膜のエッチング方法
JP2008529314A5 (https=)
JP2008530783A5 (https=)
US20240290623A1 (en) Processing methods to improve etched silicon-and-germanium-containing material surface roughness
WO2010088348A2 (en) Methods for forming conformal oxide layers on semiconductor devices
US10818507B2 (en) Method of etching silicon nitride layers for the manufacture of microelectronic workpieces
US12394631B2 (en) Selective etching of silicon-and-germanium-containing materials with increased surface purities
US20260005030A1 (en) Selective etching between silicon-and-germanium-containing materials with varying germanium concentrations
US20240282585A1 (en) Treatments to improve etched silicon-and-germanium-containing material surface roughness
WO2025226465A1 (en) Self-limited etching of low-k materials
JP2026513040A (ja) 表面純度が上がったシリコンとゲルマニウムとを含有する材料の選択的エッチング
TWI442474B (zh) 用於在半導體裝置上形成共形氧化層的方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20081031

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20101130

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20101210

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120425

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20120724

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20120925

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20121127

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20121226

LAPS Cancellation because of no payment of annual fees