KR20070089182A - 원자외선용 포토레지스트 조성물 및 이의 이미지화 방법 - Google Patents

원자외선용 포토레지스트 조성물 및 이의 이미지화 방법 Download PDF

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Publication number
KR20070089182A
KR20070089182A KR1020077013992A KR20077013992A KR20070089182A KR 20070089182 A KR20070089182 A KR 20070089182A KR 1020077013992 A KR1020077013992 A KR 1020077013992A KR 20077013992 A KR20077013992 A KR 20077013992A KR 20070089182 A KR20070089182 A KR 20070089182A
Authority
KR
South Korea
Prior art keywords
alkyl
group
cyclic
unsubstituted
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020077013992A
Other languages
English (en)
Korean (ko)
Inventor
프랜시스 엠. 하울리한
랄프 알. 다멜
앤드류 알. 로마노
무니라트나 패드매나반
달릴 엠. 라만
Original Assignee
에이제트 일렉트로닉 머트리얼즈 유에스에이 코프.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 에이제트 일렉트로닉 머트리얼즈 유에스에이 코프. filed Critical 에이제트 일렉트로닉 머트리얼즈 유에스에이 코프.
Publication of KR20070089182A publication Critical patent/KR20070089182A/ko
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/02—Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
    • C08F290/04—Polymers provided for in subclasses C08C or C08F
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020077013992A 2004-11-22 2005-11-21 원자외선용 포토레지스트 조성물 및 이의 이미지화 방법 Ceased KR20070089182A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/994,745 2004-11-22
US10/994,745 US7537879B2 (en) 2004-11-22 2004-11-22 Photoresist composition for deep UV and process thereof

Publications (1)

Publication Number Publication Date
KR20070089182A true KR20070089182A (ko) 2007-08-30

Family

ID=35892397

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077013992A Ceased KR20070089182A (ko) 2004-11-22 2005-11-21 원자외선용 포토레지스트 조성물 및 이의 이미지화 방법

Country Status (7)

Country Link
US (1) US7537879B2 (enExample)
EP (1) EP1828843A1 (enExample)
JP (1) JP2008521039A (enExample)
KR (1) KR20070089182A (enExample)
CN (1) CN101061434A (enExample)
TW (1) TW200632554A (enExample)
WO (1) WO2006054173A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101529940B1 (ko) * 2008-02-12 2015-06-19 한양대학교 산학협력단 플루오로알킬술폰늄염의 광산발생기가 측쇄에 도입된단량체 제조방법

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JPWO2006075646A1 (ja) * 2005-01-12 2008-06-12 三菱レイヨン株式会社 化合物、重合体および光学部品
US7399581B2 (en) * 2005-02-24 2008-07-15 International Business Machines Corporation Photoresist topcoat for a photolithographic process
EP1720072B1 (en) * 2005-05-01 2019-06-05 Rohm and Haas Electronic Materials, L.L.C. Compositons and processes for immersion lithography
JP4861767B2 (ja) * 2005-07-26 2012-01-25 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
JP5002137B2 (ja) * 2005-07-28 2012-08-15 富士フイルム株式会社 化学増幅型レジスト組成物及びその製造方法
US20070092829A1 (en) * 2005-10-21 2007-04-26 Christoph Noelscher Photosensitive coating for enhancing a contrast of a photolithographic exposure
TWI347495B (en) * 2006-01-08 2011-08-21 Rohm & Haas Elect Mat Coating compositions for photoresists
JP4912733B2 (ja) * 2006-02-17 2012-04-11 東京応化工業株式会社 液浸露光用レジスト組成物およびレジストパターン形成方法
US7550249B2 (en) * 2006-03-10 2009-06-23 Az Electronic Materials Usa Corp. Base soluble polymers for photoresist compositions
US7799507B2 (en) * 2006-05-18 2010-09-21 Tokyo Ohka Co., Ltd. Positive resist composition for immersion lithography and method for forming resist pattern
JP2008053622A (ja) * 2006-08-28 2008-03-06 Nec Electronics Corp 液浸露光用液浸液
US7416834B2 (en) * 2006-09-27 2008-08-26 Az Electronic Materials Usa Corp. Antireflective coating compositions
US7759046B2 (en) 2006-12-20 2010-07-20 Az Electronic Materials Usa Corp. Antireflective coating compositions
JP4752794B2 (ja) * 2007-03-08 2011-08-17 Ｊｓｒ株式会社 感放射線性樹脂組成物及び感放射線性樹脂組成物用重合体
US20090104373A1 (en) * 2007-10-23 2009-04-23 Xerox Corporation Methods for applying fluorescent ultraviolet curable varnishes
KR20090049862A (ko) * 2007-11-14 2009-05-19 주식회사 동진쎄미켐 감광성 화합물 및 이를 포함하는 포토레지스트 조성물
JP5398248B2 (ja) * 2008-02-06 2014-01-29 東京応化工業株式会社 液浸露光用レジスト組成物およびそれを用いたレジストパターン形成方法
JP5248138B2 (ja) * 2008-02-22 2013-07-31 株式会社クラレ 新規なアクリル酸エステル誘導体、およびその製造方法
JP5548406B2 (ja) 2008-08-22 2014-07-16 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法、高分子化合物
JP5337576B2 (ja) * 2008-10-07 2013-11-06 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
EP2189846B1 (en) * 2008-11-19 2015-04-22 Rohm and Haas Electronic Materials LLC Process for photolithography applying a photoresist composition comprising a block copolymer
EP2189847A3 (en) * 2008-11-19 2010-07-21 Rohm and Haas Electronic Materials LLC Compositions comprising hetero-substituted carbocyclic aryl component and processes for photolithography
JP5337579B2 (ja) * 2008-12-04 2013-11-06 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法
JP5232663B2 (ja) * 2009-01-14 2013-07-10 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、高分子化合物及び化合物
JP5232675B2 (ja) * 2009-01-26 2013-07-10 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法、並びに高分子化合物
JP5308871B2 (ja) * 2009-03-06 2013-10-09 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法
JP5292133B2 (ja) * 2009-03-09 2013-09-18 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
JP5308874B2 (ja) * 2009-03-09 2013-10-09 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法、高分子化合物、化合物
JP5308877B2 (ja) * 2009-03-10 2013-10-09 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法
JP5308876B2 (ja) * 2009-03-10 2013-10-09 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法
JP5346627B2 (ja) * 2009-03-10 2013-11-20 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
JP5264575B2 (ja) 2009-03-11 2013-08-14 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP5520515B2 (ja) * 2009-04-15 2014-06-11 東京応化工業株式会社 ポジ型レジスト組成物およびレジストパターン形成方法
JP5386236B2 (ja) * 2009-06-01 2014-01-15 東京応化工業株式会社 ポジ型レジスト組成物及びレジストパターン形成方法
JP5568258B2 (ja) 2009-07-03 2014-08-06 東京応化工業株式会社 ポジ型レジスト組成物およびそれを用いたレジストパターン形成方法、並びに含フッ素高分子化合物
JP5516195B2 (ja) 2009-08-04 2014-06-11 信越化学工業株式会社 パターン形成方法及びレジスト材料
JP5470053B2 (ja) * 2010-01-05 2014-04-16 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法
JP5496715B2 (ja) * 2010-03-10 2014-05-21 株式会社クラレ アクリル酸エステル誘導体、高分子化合物およびフォトレジスト組成物
JP5655579B2 (ja) * 2011-01-17 2015-01-21 Jsr株式会社 感放射線性樹脂組成物、パターン形成方法、重合体及び化合物
JP4945688B2 (ja) * 2011-02-07 2012-06-06 富士フイルム株式会社 化学増幅型レジスト組成物及びその製造方法
KR101855507B1 (ko) 2011-07-11 2018-05-08 주식회사 동진쎄미켐 네가티브 톤 현상액으로 현상된 포토레지스트 패턴 코팅용 조성물 및 이를 이용한 미세패턴 형성 방법
JP6002378B2 (ja) 2011-11-24 2016-10-05 東京応化工業株式会社 高分子化合物の製造方法
JP5820719B2 (ja) 2011-12-21 2015-11-24 東京応化工業株式会社 レジストパターン形成方法
US8795947B2 (en) 2012-03-22 2014-08-05 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
US8795948B2 (en) 2012-03-22 2014-08-05 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern and polymeric compound
PL3349290T3 (pl) * 2015-09-09 2024-04-02 Sumitomo Seika Chemicals Co., Ltd. Dodatek dla niewodnych roztworów elektrolitów, niewodny roztwór elektrolitu i urządzenie do magazynowania energii elektrycznej
JPWO2020196667A1 (enExample) * 2019-03-27 2020-10-01
JP7546353B2 (ja) * 2019-12-11 2024-09-06 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法
JP7718088B2 (ja) * 2021-03-31 2025-08-05 三菱ケミカル株式会社 ３－（メタ）アクリロイルスルホランの製造方法
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101529940B1 (ko) * 2008-02-12 2015-06-19 한양대학교 산학협력단 플루오로알킬술폰늄염의 광산발생기가 측쇄에 도입된단량체 제조방법

Also Published As

Publication number Publication date
EP1828843A1 (en) 2007-09-05
US20060110677A1 (en) 2006-05-25
JP2008521039A (ja) 2008-06-19
CN101061434A (zh) 2007-10-24
TW200632554A (en) 2006-09-16
WO2006054173A1 (en) 2006-05-26
US7537879B2 (en) 2009-05-26

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