KR20060133976A - 침액 리소그래피 방법 및 그 중간 생성물 - Google Patents

침액 리소그래피 방법 및 그 중간 생성물 Download PDF

Info

Publication number
KR20060133976A
KR20060133976A KR1020067009317A KR20067009317A KR20060133976A KR 20060133976 A KR20060133976 A KR 20060133976A KR 1020067009317 A KR1020067009317 A KR 1020067009317A KR 20067009317 A KR20067009317 A KR 20067009317A KR 20060133976 A KR20060133976 A KR 20060133976A
Authority
KR
South Korea
Prior art keywords
shield layer
immersion
photoresist layer
photoresist
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020067009317A
Other languages
English (en)
Korean (ko)
Inventor
카일 패터슨
커크 스트로제우스키
Original Assignee
프리스케일 세미컨덕터, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 프리스케일 세미컨덕터, 인크. filed Critical 프리스케일 세미컨덕터, 인크.
Publication of KR20060133976A publication Critical patent/KR20060133976A/ko
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Materials For Photolithography (AREA)
KR1020067009317A 2004-02-17 2005-02-15 침액 리소그래피 방법 및 그 중간 생성물 Withdrawn KR20060133976A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04290429A EP1564592A1 (en) 2004-02-17 2004-02-17 Protection of resist for immersion lithography technique
EP04290429.2 2004-02-17

Publications (1)

Publication Number Publication Date
KR20060133976A true KR20060133976A (ko) 2006-12-27

Family

ID=34684792

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067009317A Withdrawn KR20060133976A (ko) 2004-02-17 2005-02-15 침액 리소그래피 방법 및 그 중간 생성물

Country Status (7)

Country Link
US (1) US20080171285A1 (https=)
EP (2) EP1564592A1 (https=)
JP (1) JP2007529881A (https=)
KR (1) KR20060133976A (https=)
CN (1) CN101558357A (https=)
TW (1) TW200538881A (https=)
WO (1) WO2005078525A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101029761B1 (ko) * 2007-11-06 2011-04-19 에이에스엠엘 네델란즈 비.브이. 리소그래피 용 기판 준비방법, 기판, 디바이스 제조방법, 실링 코팅 어플리케이터 및 실링 코팅 측정장치

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050161644A1 (en) 2004-01-23 2005-07-28 Peng Zhang Immersion lithography fluids
TWI259319B (en) 2004-01-23 2006-08-01 Air Prod & Chem Immersion lithography fluids
JP4551701B2 (ja) * 2004-06-14 2010-09-29 富士フイルム株式会社 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法
WO2006009169A1 (ja) 2004-07-21 2006-01-26 Nikon Corporation 露光方法及びデバイス製造方法
JP4696558B2 (ja) * 2005-01-07 2011-06-08 Ｊｓｒ株式会社 フォトレジストパターン形成方法、及びフォトレジストパターン形成用基板
US20070084793A1 (en) * 2005-10-18 2007-04-19 Nigel Wenden Method and apparatus for producing ultra-high purity water
JP6400161B1 (ja) * 2017-08-08 2018-10-03 キヤノン株式会社 成膜方法、ドライフィルムの製造方法、および液体吐出ヘッドの製造方法
PT117491B (pt) * 2021-09-30 2024-03-12 Univ De Coimbra Copolímero cromogénico, seu método de obtenção, produtos que o incorporam e método de deteção de contrafação e autenticaçao de produtos
CN116263564A (zh) * 2021-12-13 2023-06-16 长鑫存储技术有限公司 光刻胶图案的形成方法和光刻胶结构
US12607935B2 (en) 2021-12-13 2026-04-21 Changxin Memory Technologies, Inc. Method of forming photoresist pattern, and photoresist structure
CN115047728B (zh) * 2022-07-01 2025-04-08 中国科学院光电技术研究所 等离子体共振腔透镜光刻的成像结构保护方法及其结构

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPH06130657A (ja) * 1991-08-20 1994-05-13 Mitsubishi Rayon Co Ltd ドライフィルムレジスト
JP3281053B2 (ja) * 1991-12-09 2002-05-13 株式会社東芝 パターン形成方法
JP3158710B2 (ja) * 1992-09-16 2001-04-23 日本ゼオン株式会社 化学増幅レジストパターンの形成方法
US6727047B2 (en) * 1999-04-16 2004-04-27 Applied Materials, Inc. Method of extending the stability of a photoresist during direct writing of an image upon the photoresist
US20010044077A1 (en) * 1999-04-16 2001-11-22 Zoilo Chen Ho Tan Stabilization of chemically amplified resist coating
US6788477B2 (en) * 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
US7432042B2 (en) * 2003-12-03 2008-10-07 United Microelectronics Corp. Immersion lithography process and mask layer structure applied in the same
US20060008746A1 (en) * 2004-07-07 2006-01-12 Yasunobu Onishi Method for manufacturing semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101029761B1 (ko) * 2007-11-06 2011-04-19 에이에스엠엘 네델란즈 비.브이. 리소그래피 용 기판 준비방법, 기판, 디바이스 제조방법, 실링 코팅 어플리케이터 및 실링 코팅 측정장치

Also Published As

Publication number Publication date
WO2005078525A2 (en) 2005-08-25
CN101558357A (zh) 2009-10-14
EP1716453A2 (en) 2006-11-02
JP2007529881A (ja) 2007-10-25
US20080171285A1 (en) 2008-07-17
TW200538881A (en) 2005-12-01
WO2005078525A3 (en) 2005-10-27
EP1564592A1 (en) 2005-08-17

Similar Documents

Publication Publication Date Title
US8895234B2 (en) Immersion lithography watermark reduction
CN100355024C (zh) 抗蚀剂图形的形成方法和半导体器件的制造方法
US7862982B2 (en) Chemical trim of photoresist lines by means of a tuned overcoat material
US8518628B2 (en) Surface switchable photoresist
CN100456421C (zh) 阻挡膜形成用材料及使用它的图案形成方法
JP5306755B2 (ja) 基板処理液およびそれを用いたレジスト基板処理方法
US6472127B1 (en) Method of forming a photoresist pattern
KR20040030853A (ko) 광학적으로 이미징된 고성능 포토마스크의 제조 방법
JP4105106B2 (ja) 微細パターン形成方法
KR20060133976A (ko) 침액 리소그래피 방법 및 그 중간 생성물
WO2010073390A1 (ja) パターンの形成方法及び半導体装置の製造方法、並びにレジストパターンの被覆層の形成材料
CN1439119A (zh) 防止显影缺陷的方法和材料
KR100599081B1 (ko) 포토레지스트 조성물 및 이를 사용한 패턴 형성방법
KR100642416B1 (ko) 상부 반사방지막 조성물 및 이를 이용한 반도체 소자의패턴 형성 방법
US5611850A (en) Composition for anti-reflective coating on resist
US5962196A (en) Deep ultraviolet light photoresist processing
KR100827506B1 (ko) 이머젼 리소그라피 공정을 이용한 반도체 소자 제조방법
KR100764374B1 (ko) 이머젼 리소그라피 용액 제거용 조성물 및 이를 이용한이머젼 리소그라피 공정을 포함하는 반도체 소자 제조방법
KR20080106696A (ko) 탑코팅 패턴을 보조 식각마스크로 활용하는 반도체 소자의제조방법
US7468235B2 (en) Barrier coating compositions containing fluorine and methods of forming photoresist patterns using such compositions
KR20070109467A (ko) 이머젼 리소그라피 공정을 이용한 반도체 소자 제조방법
JP2010128464A (ja) レジストパターン形成方法
KR20070017061A (ko) 이머션 리소그래피 워터마크 감소
KR20080009939A (ko) 이머젼 리소그라피 공정을 이용한 반도체 소자 제조방법
JPH09258452A (ja) 反射防止組成物及びパターン形成方法

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20060512

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid