TW200538881A - Immersion lithography technique and product - Google Patents
Immersion lithography technique and product Download PDFInfo
- Publication number
- TW200538881A TW200538881A TW094104674A TW94104674A TW200538881A TW 200538881 A TW200538881 A TW 200538881A TW 094104674 A TW094104674 A TW 094104674A TW 94104674 A TW94104674 A TW 94104674A TW 200538881 A TW200538881 A TW 200538881A
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- photoresist
- shielding layer
- exposure
- medium
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 57
- 238000000671 immersion lithography Methods 0.000 title claims abstract description 31
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 80
- 239000000463 material Substances 0.000 claims abstract description 43
- 238000007654 immersion Methods 0.000 claims abstract description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 16
- 238000001459 lithography Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 230000003287 optical effect Effects 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 8
- 239000013067 intermediate product Substances 0.000 claims description 6
- 238000011161 development Methods 0.000 claims description 3
- 238000004090 dissolution Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000000047 product Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000004744 fabric Substances 0.000 claims 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 239000007788 liquid Substances 0.000 abstract description 9
- 230000015556 catabolic process Effects 0.000 abstract description 2
- 238000006731 degradation reaction Methods 0.000 abstract description 2
- 229920001577 copolymer Polymers 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 12
- 239000000243 solution Substances 0.000 description 9
- 238000005470 impregnation Methods 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 239000007864 aqueous solution Substances 0.000 description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 5
- 238000007598 dipping method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 230000009931 harmful effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- XLLXMBCBJGATSP-UHFFFAOYSA-N 2-phenylethenol Chemical compound OC=CC1=CC=CC=C1 XLLXMBCBJGATSP-UHFFFAOYSA-N 0.000 description 1
- LBSXSAXOLABXMF-UHFFFAOYSA-N 4-Vinylaniline Chemical compound NC1=CC=C(C=C)C=C1 LBSXSAXOLABXMF-UHFFFAOYSA-N 0.000 description 1
- -1 4-hydroxyphenylene Chemical group 0.000 description 1
- 244000025254 Cannabis sativa Species 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- BAVYZALUXZFZLV-UHFFFAOYSA-O Methylammonium ion Chemical compound [NH3+]C BAVYZALUXZFZLV-UHFFFAOYSA-O 0.000 description 1
- 206010033799 Paralysis Diseases 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- ISQINHMJILFLAQ-UHFFFAOYSA-N argon hydrofluoride Chemical compound F.[Ar] ISQINHMJILFLAQ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229920006037 cross link polymer Polymers 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- JESXATFQYMPTNL-UHFFFAOYSA-N mono-hydroxyphenyl-ethylene Natural products OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP04290429A EP1564592A1 (en) | 2004-02-17 | 2004-02-17 | Protection of resist for immersion lithography technique |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200538881A true TW200538881A (en) | 2005-12-01 |
Family
ID=34684792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094104674A TW200538881A (en) | 2004-02-17 | 2005-02-17 | Immersion lithography technique and product |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20080171285A1 (https=) |
| EP (2) | EP1564592A1 (https=) |
| JP (1) | JP2007529881A (https=) |
| KR (1) | KR20060133976A (https=) |
| CN (1) | CN101558357A (https=) |
| TW (1) | TW200538881A (https=) |
| WO (1) | WO2005078525A2 (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050161644A1 (en) | 2004-01-23 | 2005-07-28 | Peng Zhang | Immersion lithography fluids |
| TWI259319B (en) | 2004-01-23 | 2006-08-01 | Air Prod & Chem | Immersion lithography fluids |
| JP4551701B2 (ja) * | 2004-06-14 | 2010-09-29 | 富士フイルム株式会社 | 液浸露光用保護膜形成組成物及びそれを用いたパターン形成方法 |
| WO2006009169A1 (ja) | 2004-07-21 | 2006-01-26 | Nikon Corporation | 露光方法及びデバイス製造方法 |
| JP4696558B2 (ja) * | 2005-01-07 | 2011-06-08 | Ｊｓｒ株式会社 | フォトレジストパターン形成方法、及びフォトレジストパターン形成用基板 |
| US20070084793A1 (en) * | 2005-10-18 | 2007-04-19 | Nigel Wenden | Method and apparatus for producing ultra-high purity water |
| JP2009117832A (ja) * | 2007-11-06 | 2009-05-28 | Asml Netherlands Bv | リソグラフィの基板を準備する方法、基板、デバイス製造方法、密封コーティングアプリケータ及び密封コーティング測定装置 |
| JP6400161B1 (ja) * | 2017-08-08 | 2018-10-03 | キヤノン株式会社 | 成膜方法、ドライフィルムの製造方法、および液体吐出ヘッドの製造方法 |
| PT117491B (pt) * | 2021-09-30 | 2024-03-12 | Univ De Coimbra | Copolímero cromogénico, seu método de obtenção, produtos que o incorporam e método de deteção de contrafação e autenticaçao de produtos |
| CN116263564A (zh) * | 2021-12-13 | 2023-06-16 | 长鑫存储技术有限公司 | 光刻胶图案的形成方法和光刻胶结构 |
| US12607935B2 (en) | 2021-12-13 | 2026-04-21 | Changxin Memory Technologies, Inc. | Method of forming photoresist pattern, and photoresist structure |
| CN115047728B (zh) * | 2022-07-01 | 2025-04-08 | 中国科学院光电技术研究所 | 等离子体共振腔透镜光刻的成像结构保护方法及其结构 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
| JPH06130657A (ja) * | 1991-08-20 | 1994-05-13 | Mitsubishi Rayon Co Ltd | ドライフィルムレジスト |
| JP3281053B2 (ja) * | 1991-12-09 | 2002-05-13 | 株式会社東芝 | パターン形成方法 |
| JP3158710B2 (ja) * | 1992-09-16 | 2001-04-23 | 日本ゼオン株式会社 | 化学増幅レジストパターンの形成方法 |
| US6727047B2 (en) * | 1999-04-16 | 2004-04-27 | Applied Materials, Inc. | Method of extending the stability of a photoresist during direct writing of an image upon the photoresist |
| US20010044077A1 (en) * | 1999-04-16 | 2001-11-22 | Zoilo Chen Ho Tan | Stabilization of chemically amplified resist coating |
| US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
| US7432042B2 (en) * | 2003-12-03 | 2008-10-07 | United Microelectronics Corp. | Immersion lithography process and mask layer structure applied in the same |
| US20060008746A1 (en) * | 2004-07-07 | 2006-01-12 | Yasunobu Onishi | Method for manufacturing semiconductor device |
-
2004
- 2004-02-17 EP EP04290429A patent/EP1564592A1/en not_active Withdrawn
-
2005
- 2005-02-15 CN CNA2005800013797A patent/CN101558357A/zh active Pending
- 2005-02-15 US US10/595,762 patent/US20080171285A1/en not_active Abandoned
- 2005-02-15 JP JP2006552572A patent/JP2007529881A/ja not_active Withdrawn
- 2005-02-15 EP EP05707399A patent/EP1716453A2/en not_active Withdrawn
- 2005-02-15 KR KR1020067009317A patent/KR20060133976A/ko not_active Withdrawn
- 2005-02-15 WO PCT/EP2005/001511 patent/WO2005078525A2/en not_active Ceased
- 2005-02-17 TW TW094104674A patent/TW200538881A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| WO2005078525A2 (en) | 2005-08-25 |
| CN101558357A (zh) | 2009-10-14 |
| EP1716453A2 (en) | 2006-11-02 |
| JP2007529881A (ja) | 2007-10-25 |
| US20080171285A1 (en) | 2008-07-17 |
| KR20060133976A (ko) | 2006-12-27 |
| WO2005078525A3 (en) | 2005-10-27 |
| EP1564592A1 (en) | 2005-08-17 |
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