KR20060105459A - 고체 촬상 장치 및 그 제조 방법 - Google Patents

고체 촬상 장치 및 그 제조 방법 Download PDF

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Publication number
KR20060105459A
KR20060105459A KR1020060027287A KR20060027287A KR20060105459A KR 20060105459 A KR20060105459 A KR 20060105459A KR 1020060027287 A KR1020060027287 A KR 1020060027287A KR 20060027287 A KR20060027287 A KR 20060027287A KR 20060105459 A KR20060105459 A KR 20060105459A
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KR
South Korea
Prior art keywords
transfer
transfer electrode
vertical
horizontal
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020060027287A
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English (en)
Korean (ko)
Inventor
도오루 야마다
Original Assignee
마쯔시다덴기산교 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 마쯔시다덴기산교 가부시키가이샤 filed Critical 마쯔시다덴기산교 가부시키가이샤
Publication of KR20060105459A publication Critical patent/KR20060105459A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H10F39/1515—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1534—Interline transfer

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020060027287A 2005-04-01 2006-03-27 고체 촬상 장치 및 그 제조 방법 Withdrawn KR20060105459A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00106681 2005-04-01
JP2005106681A JP4680655B2 (ja) 2005-04-01 2005-04-01 固体撮像装置及びその製造方法

Publications (1)

Publication Number Publication Date
KR20060105459A true KR20060105459A (ko) 2006-10-11

Family

ID=36649584

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060027287A Withdrawn KR20060105459A (ko) 2005-04-01 2006-03-27 고체 촬상 장치 및 그 제조 방법

Country Status (5)

Country Link
US (1) US20060221219A1 (enExample)
EP (1) EP1708270A3 (enExample)
JP (1) JP4680655B2 (enExample)
KR (1) KR20060105459A (enExample)
CN (1) CN1841770A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007036860A (ja) * 2005-07-28 2007-02-08 Sanyo Electric Co Ltd 電荷結合素子の駆動装置及び電荷結合素子の駆動方法
JP4712767B2 (ja) * 2007-06-28 2011-06-29 シャープ株式会社 固体撮像装置および電子情報機器
JP4743265B2 (ja) * 2008-12-09 2011-08-10 ソニー株式会社 固体撮像素子及び固体撮像素子の製造方法
US20110020753A1 (en) * 2009-07-27 2011-01-27 International Business Machines Corporation Method for reversing tone of patterns on integrated circuit and patterning sub-lithography trenches
JP6306989B2 (ja) * 2014-09-09 2018-04-04 浜松ホトニクス株式会社 裏面入射型固体撮像装置
CN119789558A (zh) * 2018-06-14 2025-04-08 松下知识产权经营株式会社 具备控制电极、透明电极和连接层的图像传感器

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4155121A (en) * 1978-06-30 1979-05-15 International Business Machines Corporation Redundant charge-coupled device and method
US4847692A (en) * 1987-01-26 1989-07-11 Fuji Photo Film Co., Ltd. Solid-state image pickup device with CCDS in an interline transfer system and improved charge transfer electrode structure
JPH0773125B2 (ja) * 1987-01-26 1995-08-02 富士写真フイルム株式会社 固体撮像装置およびその製造方法
US5210433A (en) * 1990-02-26 1993-05-11 Kabushiki Kaisha Toshiba Solid-state CCD imaging device with transfer gap voltage controller
JP3123068B2 (ja) * 1990-09-05 2001-01-09 ソニー株式会社 固体撮像装置
FR2681738B1 (fr) * 1991-09-24 1993-11-05 Thomson Csf Lasers de puissance a filtre semiconducteur.
US5286987A (en) * 1991-11-26 1994-02-15 Sharp Kabushiki Kaisha Charge transfer device
JPH05267356A (ja) * 1992-03-23 1993-10-15 Sony Corp 半導体装置およびその製造方法
JPH06314706A (ja) * 1993-04-30 1994-11-08 Nec Corp 電荷転送装置、その駆動方法およびその製造方法
KR0151266B1 (ko) * 1995-06-22 1998-10-01 문정환 고체촬상소자
JPH0982943A (ja) * 1995-09-14 1997-03-28 Sony Corp 固体撮像素子
KR100209758B1 (ko) * 1996-06-26 1999-07-15 구본준 고체 촬상 소자 및 그의 제조 방법
JP3060979B2 (ja) * 1997-02-10 2000-07-10 日本電気株式会社 半導体装置およびその製造方法
JP3225939B2 (ja) * 1998-12-18 2001-11-05 日本電気株式会社 固体撮像装置及びその製造方法

Also Published As

Publication number Publication date
US20060221219A1 (en) 2006-10-05
JP4680655B2 (ja) 2011-05-11
CN1841770A (zh) 2006-10-04
EP1708270A3 (en) 2007-02-14
JP2006287059A (ja) 2006-10-19
EP1708270A2 (en) 2006-10-04

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20060327

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid