CN1841770A - 固体摄像器件及其制造方法 - Google Patents

固体摄像器件及其制造方法 Download PDF

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Publication number
CN1841770A
CN1841770A CNA2006100719585A CN200610071958A CN1841770A CN 1841770 A CN1841770 A CN 1841770A CN A2006100719585 A CNA2006100719585 A CN A2006100719585A CN 200610071958 A CN200610071958 A CN 200610071958A CN 1841770 A CN1841770 A CN 1841770A
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CN
China
Prior art keywords
transfer
electrode
vertical
horizontal
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006100719585A
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English (en)
Chinese (zh)
Inventor
山田彻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN1841770A publication Critical patent/CN1841770A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H10F39/1515—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1534—Interline transfer

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CNA2006100719585A 2005-04-01 2006-04-03 固体摄像器件及其制造方法 Pending CN1841770A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP106681/2005 2005-04-01
JP2005106681A JP4680655B2 (ja) 2005-04-01 2005-04-01 固体撮像装置及びその製造方法

Publications (1)

Publication Number Publication Date
CN1841770A true CN1841770A (zh) 2006-10-04

Family

ID=36649584

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2006100719585A Pending CN1841770A (zh) 2005-04-01 2006-04-03 固体摄像器件及其制造方法

Country Status (5)

Country Link
US (1) US20060221219A1 (enExample)
EP (1) EP1708270A3 (enExample)
JP (1) JP4680655B2 (enExample)
KR (1) KR20060105459A (enExample)
CN (1) CN1841770A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101335286B (zh) * 2007-06-28 2012-05-09 夏普株式会社 固态图像捕获装置和电子信息设备

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007036860A (ja) * 2005-07-28 2007-02-08 Sanyo Electric Co Ltd 電荷結合素子の駆動装置及び電荷結合素子の駆動方法
JP4743265B2 (ja) * 2008-12-09 2011-08-10 ソニー株式会社 固体撮像素子及び固体撮像素子の製造方法
US20110020753A1 (en) * 2009-07-27 2011-01-27 International Business Machines Corporation Method for reversing tone of patterns on integrated circuit and patterning sub-lithography trenches
JP6306989B2 (ja) * 2014-09-09 2018-04-04 浜松ホトニクス株式会社 裏面入射型固体撮像装置
CN119789558A (zh) * 2018-06-14 2025-04-08 松下知识产权经营株式会社 具备控制电极、透明电极和连接层的图像传感器

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4155121A (en) * 1978-06-30 1979-05-15 International Business Machines Corporation Redundant charge-coupled device and method
US4847692A (en) * 1987-01-26 1989-07-11 Fuji Photo Film Co., Ltd. Solid-state image pickup device with CCDS in an interline transfer system and improved charge transfer electrode structure
JPH0773125B2 (ja) * 1987-01-26 1995-08-02 富士写真フイルム株式会社 固体撮像装置およびその製造方法
US5210433A (en) * 1990-02-26 1993-05-11 Kabushiki Kaisha Toshiba Solid-state CCD imaging device with transfer gap voltage controller
JP3123068B2 (ja) * 1990-09-05 2001-01-09 ソニー株式会社 固体撮像装置
FR2681738B1 (fr) * 1991-09-24 1993-11-05 Thomson Csf Lasers de puissance a filtre semiconducteur.
US5286987A (en) * 1991-11-26 1994-02-15 Sharp Kabushiki Kaisha Charge transfer device
JPH05267356A (ja) * 1992-03-23 1993-10-15 Sony Corp 半導体装置およびその製造方法
JPH06314706A (ja) * 1993-04-30 1994-11-08 Nec Corp 電荷転送装置、その駆動方法およびその製造方法
KR0151266B1 (ko) * 1995-06-22 1998-10-01 문정환 고체촬상소자
JPH0982943A (ja) * 1995-09-14 1997-03-28 Sony Corp 固体撮像素子
KR100209758B1 (ko) * 1996-06-26 1999-07-15 구본준 고체 촬상 소자 및 그의 제조 방법
JP3060979B2 (ja) * 1997-02-10 2000-07-10 日本電気株式会社 半導体装置およびその製造方法
JP3225939B2 (ja) * 1998-12-18 2001-11-05 日本電気株式会社 固体撮像装置及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101335286B (zh) * 2007-06-28 2012-05-09 夏普株式会社 固态图像捕获装置和电子信息设备

Also Published As

Publication number Publication date
US20060221219A1 (en) 2006-10-05
JP4680655B2 (ja) 2011-05-11
KR20060105459A (ko) 2006-10-11
EP1708270A3 (en) 2007-02-14
JP2006287059A (ja) 2006-10-19
EP1708270A2 (en) 2006-10-04

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Open date: 20061004