KR20060082855A - 다목적 금속 실링 - Google Patents
다목적 금속 실링 Download PDFInfo
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- KR20060082855A KR20060082855A KR1020067004346A KR20067004346A KR20060082855A KR 20060082855 A KR20060082855 A KR 20060082855A KR 1020067004346 A KR1020067004346 A KR 1020067004346A KR 20067004346 A KR20067004346 A KR 20067004346A KR 20060082855 A KR20060082855 A KR 20060082855A
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- 238000007789 sealing Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 90
- 238000000034 method Methods 0.000 claims abstract description 36
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 42
- 239000010931 gold Substances 0.000 claims description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 30
- 239000010703 silicon Substances 0.000 claims description 30
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 28
- 229910052737 gold Inorganic materials 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 27
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 25
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 238000009792 diffusion process Methods 0.000 claims description 14
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- 239000010936 titanium Substances 0.000 claims description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 11
- 230000004888 barrier function Effects 0.000 claims description 11
- 229910052697 platinum Inorganic materials 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 9
- 239000011651 chromium Substances 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 239000010948 rhodium Substances 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 229910052703 rhodium Inorganic materials 0.000 claims description 5
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910001199 N alloy Inorganic materials 0.000 claims description 3
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical group [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 claims description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000005693 optoelectronics Effects 0.000 claims description 2
- 230000001066 destructive effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 110
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 18
- 229910002601 GaN Inorganic materials 0.000 description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 16
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 12
- 229910010271 silicon carbide Inorganic materials 0.000 description 12
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 11
- 239000010408 film Substances 0.000 description 11
- 229910052594 sapphire Inorganic materials 0.000 description 11
- 239000010980 sapphire Substances 0.000 description 11
- 238000000926 separation method Methods 0.000 description 11
- 229910045601 alloy Inorganic materials 0.000 description 10
- 239000000956 alloy Substances 0.000 description 10
- 238000003486 chemical etching Methods 0.000 description 9
- 238000000407 epitaxy Methods 0.000 description 8
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 235000012431 wafers Nutrition 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 108091008695 photoreceptors Proteins 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910015365 Au—Si Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- BYDQGSVXQDOSJJ-UHFFFAOYSA-N [Ge].[Au] Chemical group [Ge].[Au] BYDQGSVXQDOSJJ-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- BVSHTEBQPBBCFT-UHFFFAOYSA-N gallium(iii) sulfide Chemical compound [S-2].[S-2].[S-2].[Ga+3].[Ga+3] BVSHTEBQPBBCFT-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02032—Preparing bulk and homogeneous wafers by reclaiming or re-processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (23)
- 기판(107) 상에 반도체 재료로 된 박층(104)을 제작하는 방법으로서,상기 기판(107)은 최종 기판으로 명명되고, 상기 최종 기판은 실리콘 기판이거나 실리콘 필름으로 코팅된 도전성 기판이며,상기 방법이,최초 서포트(101)로 명명된 서포트 상에 상기 반도체 재료로 된 박층을 형성하는 단계;상기 박층 및 상기 최종 기판을 금속 본딩에 의해 조립하는 단계;금속 본딩을 목적으로, 상기 박층 및 상기 최종 기판 상에 금속 적층물(105, 106)을 생성하는 단계; 및약한 인터페이스(103)를 따라 상기 최초 서포트를 기계적으로 골절시키는 단계를 포함하는 것을 특징으로 하는 기판 상에 반도체 재료로 된 박층을 제작하는 방법.
- 제1항에 있어서,상기 박층(104)이 에피텍시 성장에 의해 생성되는 것을 특징으로 하는 기판 상에 반도체 재료로 된 박층을 제작하는 방법.
- 제2항에 있어서,상기 최초 서포트가 기판(101) 및 에피텍시 성장한 층(102)을 포함하는 것을 특징으로 하는 기판 상에 반도체 재료로 된 박층을 제작하는 방법.
- 제3항에 있어서,상기 기계적으로 분리하는 단계가 상기 약한 인터페이스를 따라 전체를 분리함을 포함하는 것을 특징으로 하는 기판 상에 반도체 재료로 된 박층을 제작하는 방법.
- 제1항 내지 제4항 중 어느 한 항에 있어서,옴 컨택 층, 반사층 및 금 또는 알루미늄 기반 층을 포함하는 층(105, 106)들의 스택을 이용하여 금속 본딩이 달성되는 것을 특징으로 하는 기판 상에 반도체 재료로 된 박층을 제작하는 방법.
- 제5항에 있어서,상기 반사층은 은, 알루미늄, 로듐, 금 또는 백금에 기반한 것을 특징으로 하는 기판 상에 반도체 재료로 된 박층을 제작하는 방법.
- 제1항 내지 제6항 중 어느 한 항에 있어서,금속 본딩은 공융상의 형성을 포함하는 것을 특징으로 하는 기판 상에 반도체 재료로 된 박층을 제작하는 방법.
- 제7항에 있어서,상기 공융상은 금-실리콘 또는 알루미늄-실리콘인 것을 특징으로 하는 기판 상에 반도체 재료로 된 박층을 제작하는 방법.
- 제5항 내지 제8항 중 어느 한 항에 있어서,상기 층들의 스택은 확산 장벽을 형성하는 층을 더 포함하는 것을 특징으로 하는 기판 상에 반도체 재료로 된 박층을 제작하는 방법.
- 제9항에 있어서,상기 확산 장벽은 텅스텐, 티타늄, 크롬, 백금 또는 탄탈을 포함하는 것을 특징으로 하는 기판 상에 반도체 재료로 된 박층을 제작하는 방법.
- 제1항 내지 제10항 중 어느 한 항에 있어서,상기 기계적으로 분리하는 단계 이후에, 상기 반도체 재료로 된 층 상에 컨택 핀(108)을 형성하는 단계를 더 포함하는 것을 특징으로 하는 기판 상에 반도체 재료로 된 박층을 제작하는 방법.
- 제11항에 있어서,상기 핀이 투명하거나, 상기 반도체 재료로 된 층의 전체 표면을 덮지 않는 것을 특징으로 하는 기판 상에 반도체 재료로 된 박층을 제작하는 방법.
- 제1항 내지 제12항 중 어느 한 항에 있어서,상기 박층(104)의 반도체 재료는, 0≤ x ≤ 1 및 0≤ y ≤ 1인 조건에서의 AlxGa1-x-yInyP 또는 AlxGa1 -x- yInyN 합금인 것을 특징으로 하는 기판 상에 반도체 재료로 된 박층을 제작하는 방법.
- 실리콘 기판이거나, 실리콘 필름으로 코팅된 도전성 기판인 기판(107), 및금속 본딩을 통해 본딩된 반도체 재료로부터 형성된 박층(104)을 포함하는 중간 기판.
- 제14항에 있어서,상기 금속 본딩은 금속층(105, 106)들의 스택을 포함하는 것을 특징으로 하는 중간 기판.
- 제15항에 있어서,상기 금속층들의 스택은 옴 컨택 층, 반사층 및 금 또는 알루미늄에 기반한 층을 포함하는 것을 특징으로 하는 중간 기판.
- 제16항에 있어서,상기 반사층은 은, 알루미늄, 로듐, 금 또는 백금에 기반한 것을 특징으로 하는 중간 기판.
- 제16항 또는 제17항에 있어서,상기 금속층들의 스택은 확산 장벽을 형성하는 층을 더 포함하는 것을 특징으로 하는 중간 기판.
- 제18항에 있어서,상기 확산 장벽 층은 텅스텐, 티타늄, 크롬, 백금 또는 탄탈을 포함하는 것을 특징으로 하는 중간 기판.
- 제14항 내지 제19항 중 어느 한 항에 있어서,반도체 재료로 된 박층(104) 상의 컨택 핀(108)을 더 포함하는 것을 특징으로 하는 중간 기판.
- 제20항에 있어서,상기 핀이 투명하거나, 상기 반도체 재료로 된 층의 전체 표면을 덮지 않는 것을 특징으로 하는 중간 기판.
- 제14항 내지 제21항 중 어느 한 항에 있어서,상기 박층(104)의 반도체 재료는, 0≤ x ≤ 1 및 0≤ y ≤ 1인 조건에서의 AlxGa1-x-yInyP 또는 AlxGa1 -x- yInyN 합금인 것을 특징으로 하는 중간 기판.
- 제14항 내지 제22항 중 어느 한 항에 따른 중간 기판을 포함하는 광전자공학 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0310369 | 2003-09-02 | ||
FR0310369A FR2859312B1 (fr) | 2003-09-02 | 2003-09-02 | Scellement metallique multifonction |
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EP (1) | EP1661175A1 (ko) |
JP (1) | JP4490424B2 (ko) |
KR (2) | KR100896095B1 (ko) |
CN (1) | CN1856874A (ko) |
FR (1) | FR2859312B1 (ko) |
TW (1) | TWI267167B (ko) |
WO (1) | WO2005024934A1 (ko) |
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US7232739B2 (en) | 2007-06-19 |
FR2859312B1 (fr) | 2006-02-17 |
KR20080055877A (ko) | 2008-06-19 |
KR100896095B1 (ko) | 2009-05-06 |
TW200531205A (en) | 2005-09-16 |
JP2007504658A (ja) | 2007-03-01 |
JP4490424B2 (ja) | 2010-06-23 |
KR100878915B1 (ko) | 2009-01-15 |
US7189632B2 (en) | 2007-03-13 |
WO2005024934A1 (fr) | 2005-03-17 |
US20060228820A1 (en) | 2006-10-12 |
FR2859312A1 (fr) | 2005-03-04 |
US20050048739A1 (en) | 2005-03-03 |
TWI267167B (en) | 2006-11-21 |
CN1856874A (zh) | 2006-11-01 |
EP1661175A1 (fr) | 2006-05-31 |
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