CN103996755B - 一种氮化物发光二极管组件的制备方法 - Google Patents
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Abstract
本发明涉及一种氮化物发光二极管组件的制备方法,具有降低电子漏电,降低efficiency droop效应,增强空穴浓度,增强发光效率的优势,该方法是采用如下步骤实现的:(1)提供一过渡衬底;(2)在所述过渡衬底上依次生长P型半导体层和第一键合层;(3)提供一永久衬底;(4)在所述永久衬底上依次生长N型半导体层、发光层和第二键合层;(5)将生长有P型半导体层的过渡衬底以及生长有N型半导体层、发光层的永久衬底,通过第一键合层和第二键合层进行键合。
Description
技术领域
本发明涉及氮化物半导体光电器件,具体是一种氮化物发光二极管组件的制备方法。
背景技术
近年来,发光二极管(英文简称为LED)组件着重于亮度提升,期望能应用于照明领域,以发挥节能减碳的功效。一般来说,传统的InGaN LED组件包括:具有在蓝宝石衬底上形成氮化物缓冲层,由Si掺杂GaN的n型接触层,由具有InGaN的多层量子井结构(英文为Multi-Quantum-Well,简称MQW)的发光层,由Mg掺杂AlGaN的电子阻挡层,由Mg掺杂的p型氮化物接触层依次堆叠而成的结构,该结构具有较高亮度的半导体组件特性。
由于通常InGaN LED结构 MQW发光层生长温度一般为750~850℃,P 型半导体层生长温度相对较高,一般为900~1000℃,但是P 型半导体层温度越高对发光层破坏越大,导致复合效率较低,影响发光性能,然而 P 型层温度降低又会导致P 型半导体层晶体质量降低,而目前来看,电子漏电和空穴浓度低是导致效率骤降(英文为efficiency droop)现象的重要原因,从而制约着其效率的提升及更广泛的应用。基于此,有必要发明一种全新的制备方法以解决上述存在的问题。
发明内容
针对上述问题,本发明提供一种既可以高温生长 P 型半导体层并且避免其对MQW 层产生破坏的氮化物发光二极管组件的制备方法,该方法是采用如下步骤实现的:(1)提供一过渡衬底;(2)在所述过渡衬底上依次生长P型半导体层和第一键合层;(3)提供一永久衬底;(4)在所述永久衬底上依次生长N型半导体层、发光层和第二键合层;(5)将生长有P型半导体层的过渡衬底以及生长有N型半导体层、发光层的永久衬底,通过第一键合层和第二键合层进行键合。
第一键合层和第二键合层进行键合的方式,可以选用晶片或管芯方式键合,优选晶片键合方式,可采用直接键合技术或介质键合技术,优选直接键合技术,又可分为热键合和低温真空键合技术;
优选地,将第一键合层和第二键合层进行键合后,去除过渡衬底;
优选地,去除过渡衬底后,再通过蚀刻工艺暴露出部分N型半导体层,分别在P型半导体层和裸露的N型半导体层上制作P电极和N电极;
优选地,所述第一键合层/第二键合层材料为Al1-x-yGaxInyN层,其中0≦x<1,0≦y<1。
优选地,所述过渡衬底选用氧化铝单晶(Sapphire)或SiC(6H-SiC或4H-SiC) 或Si或GaAs 或GaN或其组合;
优选地,所述永久衬底选用氧化铝单晶(Sapphire)或SiC(6H-SiC或4H-SiC) 或Si或GaAs 或GaN或其组合;
优选地,所述P型半导体层可以依次包括P型接触层、P型层和电子阻挡层;
优选地,所述过渡衬底和P型半导体层之间还可以包括透明导电层;
优选地,所述永久衬底和N型半导体层之间还可以包括缓冲层;
优选地,所述缓冲层可以包括低温缓冲层或高温缓冲层或其组合。
与现有制备氮化物发光二极管组件的方法相比,本发明所述的通过键合工艺制备氮化物发光二极管组件的方法,具有以下有益效果:
(1)可以避免直接生长P型半导体层对发光层的破坏,增强发光效率;
(2)可以升高P型半导体层的生长温度并利于掺杂,增强空穴浓度(P型半导体层生长条件的优化不受发光层限制);
(3)通常InGaN LED结构的电子阻挡层界面具有诱导电子的正向极化面电荷,可以降低电子阻挡层势垒,从而导致电子漏出发光层,而本发明将电子阻挡层极化电荷被反向,即为负极化电荷,从而使电子被限制在发光层,降低电子漏电,增加复合效率,从而增强发光效率。
本发明具有降低电子漏电,增强空穴浓度,降低efficiency droop效应,增强发光效率的优势,适用于半导体器件的制造。
附图说明
附图用来提供对本发明的进一步理解,并且构成说明书的一部分,与本发明的实施例一起用于解释本发明,并不构成对本发明的限制。此外,附图数据是描述概要,不是按比例绘制。
图1~2为本发明实施例制作氮化物发光二极管组件的流程示意图。
图中标示:
100:过渡衬底;101:透明导电层;102:P型半导体层;102a:P型接触层;102b:P型层;102c:电子阻挡层;103a:第一GaN层;103b:第二GaN层;104:永久衬底;105a:低温缓冲层;105b:高温缓冲层;106: N型半导体层;107:发光层;108:N电极;109:P电极。
具体实施方式
下面结合附图和实施例对本发明的具体实施方式进行详细说明。
实施例
如图1和2所示,一种氮化物发光二极管组件的制备方法,该方法是采用如下步骤实现的:
(1)提供一过渡衬底100,所述过渡衬底选用氧化铝单晶(Sapphire)或SiC(6H-SiC或4H-SiC) 或Si或GaAs 或GaN或其组合,在本实施例优选为Si衬底;
(2)在所述过渡衬底100上形成透明导电层101,透明导电层可以选用ITO、IZO、ZnO、GZO、包含氧化硅的ITO等,在本实施例优选ITO;
(3)在所述透明导电层101上依次生长P型半导体层102和第一GaN层103a,其中所述P型半导体层包括P型接触层、P型层和电子阻挡层,第一GaN层103a厚度为1 ~100nm,优选10nm;
(4)提供一永久衬底104,所述永久衬底选用氧化铝单晶(Sapphire)或SiC(6H-SiC或4H-SiC) 或Si或GaAs 或GaN或其组合,晶格常数(lattice constant)接近于氮化物半导体的单晶氧化物也包含其中,在本实施例优选为Sapphire衬底;
(5)在所述永久衬底104上依次生长低温缓冲层105a、高温缓冲层105b、N型半导体层106、发光层107和第二GaN层103b,其中缓冲层材料为氮化铝镓铟(Al1-x-yGaxInyN),其中0≦x<1,0≦y<1,第二GaN层103b厚度为1~100nm,优选10nm;
(6)将生长有P型半导体层102的过渡衬底100以及生长有N型半导体层106、发光层107的永久衬底104,通过第一GaN层103a和第二GaN层103b进行低温真空键合,由于其在真空环境下通过等离子体对晶片表面清洁和活化处理,这样不仅可获得更加清洁平整和活性更强的表面,而且可进一步降低实现键合所需要的退火温度,因此,可以获得更好的键合效果,减少对键合层的损伤, 同时避免对发光层(MQW层)和P型半导体层的破坏。具体来说,键合的工艺参数为:键合温度100~600℃,优选300℃,要求温度小于发光层和键合层生长温度,键合真空度在10 -3 Pa以下,键合压力为10~1000 N/cm2 ,键合时间为1~100 min;
(7)去除过渡衬底100;
(8)再通过蚀刻工艺暴露出部分N型半导体层,分别在P型半导体层和裸露的N型半导体层上制作P电极109和N电极108,如此完成氮化物发光二极管组件的制备。
通过上述方法制备氮化物发光二极管组件,可以避免直接生长P型半导体层对发光层的破坏,增强发光效率,而且P型半导体层生长条件优化不受发光层限制,可以升高P型生长温度并利于掺杂,增强空穴浓度,同时,电子阻挡层极化电荷被反向,从而使电子被限制在发光层,降低电子漏电,增加复合。因此,本发明组件具有降低电子漏电,增强空穴浓度,降低efficiency droop效应,增强发光效率的优点。
需要指出的是,虽然上述实施例中的键合材料选用GaN层,其还可以选用其它半导体材料,如第一键合层/第二键合层材料为Al1-x-yGaxInyN层,其中0≦x<1,0≦y<1,该键合层材料可为P型掺杂(如Mg等)或是不掺杂。
应当理解的是,上述具体实施方案为本发明的优选实施例,本发明的范围不限于该实施例,凡依本发明所做的任何变更,皆属本发明的保护范围之内。
Claims (10)
1.一种氮化物发光二极管组件的制备方法,其特征在于:包括如下步骤:
(1)提供一过渡衬底;
(2)在所述过渡衬底上依次生长P型半导体层和第一键合层;
(3)提供一永久衬底;
(4)在所述永久衬底上依次生长N型半导体层、发光层和第二键合层;
(5)将生长有P型半导体层的过渡衬底以及生长有N型半导体层、发光层的永久衬底,通过第一键合层和第二键合层进行键合。
2.根据权利要求1所述的氮化物发光二极管组件的制备方法,其特征在于:所述第一键合层/第二键合层材料为Al1-x-yGaxInyN层,其中0≦x<1,0≦y<1。
3.根据权利要求1所述的氮化物发光二极管组件的制备方法,其特征在于:所述键合方式选用直接键合或介质键合或二者组合。
4.根据权利要求3所述的氮化物发光二极管组件的制备方法,其特征在于:所述直接键合为热键合或低温真空键合。
5.根据权利要求1所述的氮化物发光二极管组件的制备方法,其特征在于:将所述第一键合层和第二键合层进行键合后,去除过渡衬底。
6.根据权利要求5所述的氮化物发光二极管组件的制备方法,其特征在于:还包括去除过渡衬底后,再通过蚀刻工艺暴露出部分N型半导体层,分别在P型半导体层和裸露的N型半导体层上制作P电极和N电极。
7.根据权利要求1所述的氮化物发光二极管组件的制备方法,其特征在于:所述过渡衬底/永久衬底选用氧化铝单晶(Sapphire)或SiC或Si或GaAs 或GaN或其组合。
8.根据权利要求1所述的氮化物发光二极管组件的制备方法,其特征在于:所述P型半导体层包括P型接触层、P型层和电子阻挡层。
9.根据权利要求1所述的氮化物发光二极管组件的制备方法,其特征在于:在所述过渡衬底和P型半导体层之间包括透明导电层。
10.根据权利要求1所述的氮化物发光二极管组件的制备方法,其特征在于:在所述永久衬底和N型半导体层之间包括缓冲层。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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CN201410215285.0A CN103996755B (zh) | 2014-05-21 | 2014-05-21 | 一种氮化物发光二极管组件的制备方法 |
PCT/CN2014/094874 WO2015176532A1 (zh) | 2014-05-21 | 2014-12-25 | 一种氮化物发光二极管组件的制备方法 |
US15/235,092 US20160351750A1 (en) | 2014-05-21 | 2016-08-11 | Fabrication Method of Nitride Light Emitting Diodes |
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CN103996755B (zh) * | 2014-05-21 | 2016-08-17 | 天津三安光电有限公司 | 一种氮化物发光二极管组件的制备方法 |
CN105720144B (zh) * | 2016-03-24 | 2021-09-24 | 晶能光电(江西)有限公司 | 一种硅衬底氮化物紫外led芯片结构及其实现方法 |
CN106206866B (zh) * | 2016-07-15 | 2018-08-10 | 华灿光电(浙江)有限公司 | 一种发光二极管的制造方法及发光二极管 |
CN108269890B (zh) * | 2018-01-25 | 2019-06-07 | 扬州乾照光电有限公司 | 一种led芯片及其制作方法 |
CN113179667B (zh) * | 2019-11-26 | 2022-04-29 | 重庆康佳光电技术研究院有限公司 | 复合式微型发光二极管、显示面板、及电子设备 |
CN112289904B (zh) * | 2020-09-16 | 2022-06-17 | 华灿光电(苏州)有限公司 | 红光led的制作方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6809341B2 (en) * | 2002-03-12 | 2004-10-26 | Opto Tech University | Light-emitting diode with enhanced brightness and method for fabricating the same |
CN1856874A (zh) * | 2003-09-02 | 2006-11-01 | S.O.I.探测硅绝缘技术公司 | 多用途金属密封 |
CN101964385A (zh) * | 2010-10-28 | 2011-02-02 | 映瑞光电科技(上海)有限公司 | 发光二极管及其形成方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW497277B (en) * | 2000-03-10 | 2002-08-01 | Toshiba Corp | Semiconductor light emitting device and method for manufacturing the same |
US6869820B2 (en) * | 2002-01-30 | 2005-03-22 | United Epitaxy Co., Ltd. | High efficiency light emitting diode and method of making the same |
US6786390B2 (en) * | 2003-02-04 | 2004-09-07 | United Epitaxy Company Ltd. | LED stack manufacturing method and its structure thereof |
US20080258166A1 (en) * | 2004-05-11 | 2008-10-23 | Mitsuhiko Sakai | Semiconductor Light Emitting Device and Method for Manufacturing the Same |
JP2006086361A (ja) * | 2004-09-16 | 2006-03-30 | Stanley Electric Co Ltd | 半導体発光素子及びその製造方法 |
CN101276863B (zh) * | 2007-03-29 | 2011-02-09 | 晶元光电股份有限公司 | 发光二极管及其制造方法 |
CN102099976B (zh) * | 2008-05-30 | 2013-06-12 | 加利福尼亚大学董事会 | 在降低的温度下制造的(Al、Ga、In)N二极管激光器 |
WO2012176369A1 (ja) * | 2011-06-24 | 2012-12-27 | パナソニック株式会社 | 窒化ガリウム系半導体発光素子、光源および凹凸構造形成方法 |
WO2014057748A1 (ja) * | 2012-10-12 | 2014-04-17 | 住友電気工業株式会社 | Iii族窒化物複合基板およびその製造方法、ならびにiii族窒化物半導体デバイスの製造方法 |
CN103996755B (zh) * | 2014-05-21 | 2016-08-17 | 天津三安光电有限公司 | 一种氮化物发光二极管组件的制备方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6809341B2 (en) * | 2002-03-12 | 2004-10-26 | Opto Tech University | Light-emitting diode with enhanced brightness and method for fabricating the same |
CN1856874A (zh) * | 2003-09-02 | 2006-11-01 | S.O.I.探测硅绝缘技术公司 | 多用途金属密封 |
CN101964385A (zh) * | 2010-10-28 | 2011-02-02 | 映瑞光电科技(上海)有限公司 | 发光二极管及其形成方法 |
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