CN103996755B - 一种氮化物发光二极管组件的制备方法 - Google Patents

一种氮化物发光二极管组件的制备方法 Download PDF

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CN103996755B
CN103996755B CN201410215285.0A CN201410215285A CN103996755B CN 103996755 B CN103996755 B CN 103996755B CN 201410215285 A CN201410215285 A CN 201410215285A CN 103996755 B CN103996755 B CN 103996755B
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董木森
申利莹
王笃祥
王良均
刘晓峰
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Tianjin Sanan Optoelectronics Co Ltd
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Abstract

本发明涉及一种氮化物发光二极管组件的制备方法，具有降低电子漏电，降低efficiency droop效应，增强空穴浓度，增强发光效率的优势，该方法是采用如下步骤实现的：（1）提供一过渡衬底；（2）在所述过渡衬底上依次生长P型半导体层和第一键合层；（3）提供一永久衬底；（4）在所述永久衬底上依次生长N型半导体层、发光层和第二键合层；（5）将生长有P型半导体层的过渡衬底以及生长有N型半导体层、发光层的永久衬底，通过第一键合层和第二键合层进行键合。

Description

一种氮化物发光二极管组件的制备方法
技术领域
本发明涉及氮化物半导体光电器件，具体是一种氮化物发光二极管组件的制备方法。
背景技术
近年来，发光二极管（英文简称为LED）组件着重于亮度提升，期望能应用于照明领域，以发挥节能减碳的功效。一般来说，传统的InGaN LED组件包括：具有在蓝宝石衬底上形成氮化物缓冲层，由Si掺杂GaN的n型接触层，由具有InGaN的多层量子井结构（英文为Multi-Quantum-Well，简称MQW）的发光层，由Mg掺杂AlGaN的电子阻挡层，由Mg掺杂的p型氮化物接触层依次堆叠而成的结构，该结构具有较高亮度的半导体组件特性。
由于通常InGaN LED结构 MQW发光层生长温度一般为750~850℃，P 型半导体层生长温度相对较高，一般为900~1000℃，但是P 型半导体层温度越高对发光层破坏越大，导致复合效率较低，影响发光性能，然而 P 型层温度降低又会导致P 型半导体层晶体质量降低，而目前来看，电子漏电和空穴浓度低是导致效率骤降（英文为efficiency droop）现象的重要原因，从而制约着其效率的提升及更广泛的应用。基于此，有必要发明一种全新的制备方法以解决上述存在的问题。
发明内容
针对上述问题，本发明提供一种既可以高温生长 P 型半导体层并且避免其对MQW 层产生破坏的氮化物发光二极管组件的制备方法，该方法是采用如下步骤实现的：（1）提供一过渡衬底；（2）在所述过渡衬底上依次生长P型半导体层和第一键合层；（3）提供一永久衬底；（4）在所述永久衬底上依次生长N型半导体层、发光层和第二键合层；（5）将生长有P型半导体层的过渡衬底以及生长有N型半导体层、发光层的永久衬底，通过第一键合层和第二键合层进行键合。
第一键合层和第二键合层进行键合的方式，可以选用晶片或管芯方式键合，优选晶片键合方式，可采用直接键合技术或介质键合技术，优选直接键合技术，又可分为热键合和低温真空键合技术；
优选地，将第一键合层和第二键合层进行键合后，去除过渡衬底；
优选地，去除过渡衬底后，再通过蚀刻工艺暴露出部分N型半导体层，分别在P型半导体层和裸露的N型半导体层上制作P电极和N电极；
优选地，所述第一键合层/第二键合层材料为Al1-x-yGaxInyN层，其中0≦x＜1，0≦y＜1。
优选地，所述过渡衬底选用氧化铝单晶（Sapphire）或SiC(6H-SiC或4H-SiC) 或Si或GaAs 或GaN或其组合；
优选地，所述永久衬底选用氧化铝单晶（Sapphire）或SiC(6H-SiC或4H-SiC) 或Si或GaAs 或GaN或其组合；
优选地，所述P型半导体层可以依次包括P型接触层、P型层和电子阻挡层；
优选地，所述过渡衬底和P型半导体层之间还可以包括透明导电层；
优选地，所述永久衬底和N型半导体层之间还可以包括缓冲层；
优选地，所述缓冲层可以包括低温缓冲层或高温缓冲层或其组合。
与现有制备氮化物发光二极管组件的方法相比，本发明所述的通过键合工艺制备氮化物发光二极管组件的方法，具有以下有益效果：
（1）可以避免直接生长P型半导体层对发光层的破坏，增强发光效率；
（2）可以升高P型半导体层的生长温度并利于掺杂，增强空穴浓度（P型半导体层生长条件的优化不受发光层限制）；
（3）通常InGaN LED结构的电子阻挡层界面具有诱导电子的正向极化面电荷，可以降低电子阻挡层势垒，从而导致电子漏出发光层，而本发明将电子阻挡层极化电荷被反向，即为负极化电荷，从而使电子被限制在发光层，降低电子漏电，增加复合效率，从而增强发光效率。
本发明具有降低电子漏电，增强空穴浓度，降低efficiency droop效应，增强发光效率的优势，适用于半导体器件的制造。
附图说明
附图用来提供对本发明的进一步理解，并且构成说明书的一部分，与本发明的实施例一起用于解释本发明，并不构成对本发明的限制。此外，附图数据是描述概要，不是按比例绘制。
图1~2为本发明实施例制作氮化物发光二极管组件的流程示意图。
图中标示：
100：过渡衬底；101：透明导电层；102：P型半导体层；102a：P型接触层；102b：P型层；102c：电子阻挡层；103a：第一GaN层；103b：第二GaN层；104：永久衬底；105a：低温缓冲层；105b：高温缓冲层；106： N型半导体层；107：发光层；108：N电极；109：P电极。
具体实施方式
下面结合附图和实施例对本发明的具体实施方式进行详细说明。
实施例
如图1和2所示，一种氮化物发光二极管组件的制备方法，该方法是采用如下步骤实现的：
（1）提供一过渡衬底100，所述过渡衬底选用氧化铝单晶（Sapphire）或SiC(6H-SiC或4H-SiC) 或Si或GaAs 或GaN或其组合，在本实施例优选为Si衬底；
（2）在所述过渡衬底100上形成透明导电层101，透明导电层可以选用ITO、IZO、ZnO、GZO、包含氧化硅的ITO等，在本实施例优选ITO；
（3）在所述透明导电层101上依次生长P型半导体层102和第一GaN层103a，其中所述P型半导体层包括P型接触层、P型层和电子阻挡层，第一GaN层103a厚度为1 ~100nm，优选10nm；
（4）提供一永久衬底104，所述永久衬底选用氧化铝单晶（Sapphire）或SiC(6H-SiC或4H-SiC) 或Si或GaAs 或GaN或其组合，晶格常数（lattice constant）接近于氮化物半导体的单晶氧化物也包含其中，在本实施例优选为Sapphire衬底；
（5）在所述永久衬底104上依次生长低温缓冲层105a、高温缓冲层105b、N型半导体层106、发光层107和第二GaN层103b，其中缓冲层材料为氮化铝镓铟（Al1-x-yGaxInyN），其中0≦x＜1，0≦y＜1，第二GaN层103b厚度为1~100nm，优选10nm；
（6）将生长有P型半导体层102的过渡衬底100以及生长有N型半导体层106、发光层107的永久衬底104，通过第一GaN层103a和第二GaN层103b进行低温真空键合，由于其在真空环境下通过等离子体对晶片表面清洁和活化处理，这样不仅可获得更加清洁平整和活性更强的表面，而且可进一步降低实现键合所需要的退火温度，因此，可以获得更好的键合效果，减少对键合层的损伤， 同时避免对发光层（MQW层）和P型半导体层的破坏。具体来说，键合的工艺参数为：键合温度100~600℃，优选300℃，要求温度小于发光层和键合层生长温度，键合真空度在10 -3 Pa以下，键合压力为10~1000 N/cm2 ，键合时间为1~100 min；
（7）去除过渡衬底100；
（8）再通过蚀刻工艺暴露出部分N型半导体层，分别在P型半导体层和裸露的N型半导体层上制作P电极109和N电极108，如此完成氮化物发光二极管组件的制备。
通过上述方法制备氮化物发光二极管组件，可以避免直接生长P型半导体层对发光层的破坏，增强发光效率，而且P型半导体层生长条件优化不受发光层限制，可以升高P型生长温度并利于掺杂，增强空穴浓度，同时，电子阻挡层极化电荷被反向，从而使电子被限制在发光层，降低电子漏电，增加复合。因此，本发明组件具有降低电子漏电，增强空穴浓度，降低efficiency droop效应，增强发光效率的优点。
需要指出的是，虽然上述实施例中的键合材料选用GaN层，其还可以选用其它半导体材料，如第一键合层/第二键合层材料为Al1-x-yGaxInyN层，其中0≦x＜1，0≦y＜1，该键合层材料可为P型掺杂（如Mg等）或是不掺杂。
应当理解的是，上述具体实施方案为本发明的优选实施例，本发明的范围不限于该实施例，凡依本发明所做的任何变更，皆属本发明的保护范围之内。

Claims (10)

1.一种氮化物发光二极管组件的制备方法，其特征在于：包括如下步骤：
（1）提供一过渡衬底；
（2）在所述过渡衬底上依次生长P型半导体层和第一键合层；
（3）提供一永久衬底；
（4）在所述永久衬底上依次生长N型半导体层、发光层和第二键合层；
（5）将生长有P型半导体层的过渡衬底以及生长有N型半导体层、发光层的永久衬底，通过第一键合层和第二键合层进行键合。
2.根据权利要求1所述的氮化物发光二极管组件的制备方法，其特征在于：所述第一键合层/第二键合层材料为Al1-x-yGaxInyN层，其中0≦x＜1，0≦y＜1。
3.根据权利要求1所述的氮化物发光二极管组件的制备方法，其特征在于：所述键合方式选用直接键合或介质键合或二者组合。
4.根据权利要求3所述的氮化物发光二极管组件的制备方法，其特征在于：所述直接键合为热键合或低温真空键合。
5.根据权利要求1所述的氮化物发光二极管组件的制备方法，其特征在于：将所述第一键合层和第二键合层进行键合后，去除过渡衬底。
6.根据权利要求5所述的氮化物发光二极管组件的制备方法，其特征在于：还包括去除过渡衬底后，再通过蚀刻工艺暴露出部分N型半导体层，分别在P型半导体层和裸露的N型半导体层上制作P电极和N电极。
7.根据权利要求1所述的氮化物发光二极管组件的制备方法，其特征在于：所述过渡衬底/永久衬底选用氧化铝单晶（Sapphire）或SiC或Si或GaAs 或GaN或其组合。
8.根据权利要求1所述的氮化物发光二极管组件的制备方法，其特征在于：所述P型半导体层包括P型接触层、P型层和电子阻挡层。
9.根据权利要求1所述的氮化物发光二极管组件的制备方法，其特征在于：在所述过渡衬底和P型半导体层之间包括透明导电层。
10.根据权利要求1所述的氮化物发光二极管组件的制备方法，其特征在于：在所述永久衬底和N型半导体层之间包括缓冲层。
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