KR20060081506A - 박막트랜지스터 - Google Patents
박막트랜지스터 Download PDFInfo
- Publication number
- KR20060081506A KR20060081506A KR1020050001851A KR20050001851A KR20060081506A KR 20060081506 A KR20060081506 A KR 20060081506A KR 1020050001851 A KR1020050001851 A KR 1020050001851A KR 20050001851 A KR20050001851 A KR 20050001851A KR 20060081506 A KR20060081506 A KR 20060081506A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- gate electrode
- semiconductor layer
- insulating film
- thin film
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 37
- 239000010408 film Substances 0.000 claims abstract description 43
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 59
- 229920005591 polysilicon Polymers 0.000 claims description 59
- 238000000034 method Methods 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 11
- 230000000149 penetrating effect Effects 0.000 claims description 3
- -1 step coverage Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 137
- 229910021417 amorphous silicon Inorganic materials 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (9)
- 기판상에 형성된 반도체층과,상기 반도체층을 포함한 상기 기판상에 형성된 제1 절연막과,상기 제1 절연막을 사이에 두고 상기 반도체층 상부의 상기 제1 절연막상에 상기 반도체층과 접촉하도록 형성된 게이트전극과,상기 게이트전극을 포함한 상기 제1 절연막 상에 형성된 상기 제2 절연막을 포함하는 박막트랜지스터.
- 제1항에 있어서,상기 게이트전극폭이 상기 반도체층 폭보다 적게 형성되는 박막트랜지스터.
- 제1항에 있어서,상기 게이트전극은 상기 반도체층의 중앙영역에서 대칭을 이루도록 정렬되는 박막트랜지시터.
- 제2항에 있어서,상기 게이트전극폭은 상기 반도체층폭보다 0.1㎛ 이상 적은 폭을 갖는 박막트랜지스터.
- 제2항에 있어서,상기 게이트전극폭 양단부 각각은 상기 반도체층의 양단부 각각으로부터 적어도 0.05㎛ 내측에 위치하도록 정렬되는 박막트랜지스터.
- 제1항에 있어서,상기 반도체층은 상기 기판상에 형성된 폴리실리콘층인 박막트랜지스터.
- 제1항에 있어서,상기 제2 절연막에는 적어도 하나의 콘택홀이 형성되며,상기 제2 절연막 상에 형성되어 상기 콘택홀을 통해 상기 게이트전극과 콘택되는 소스/드레인금속층을 더 포함하는 박막트랜지스터.
- 제7항에 있어서,상기 소스/드레인금속층은 제2 절연막과 제1 절연막을 관통하는 콘택홀을 통해 반도체층과 콘택되는 박막트랜지스터.
- 제1항에 있어서,상기 기판상에 상기 반도체층을 포함한 제1 절연막 하부에 형성되는 버퍼층을 더 포함하는 박막트랜지스터.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050001851A KR100703467B1 (ko) | 2005-01-07 | 2005-01-07 | 박막트랜지스터 |
US11/327,384 US20060151790A1 (en) | 2005-01-07 | 2006-01-09 | Thin film transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050001851A KR100703467B1 (ko) | 2005-01-07 | 2005-01-07 | 박막트랜지스터 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060081506A true KR20060081506A (ko) | 2006-07-13 |
KR100703467B1 KR100703467B1 (ko) | 2007-04-03 |
Family
ID=36652404
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020050001851A KR100703467B1 (ko) | 2005-01-07 | 2005-01-07 | 박막트랜지스터 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20060151790A1 (ko) |
KR (1) | KR100703467B1 (ko) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101847910B1 (ko) * | 2011-05-26 | 2018-04-13 | 삼성디스플레이 주식회사 | 픽셀부 요철간 간격 조절방법 및 이를 이용한 표시장치 제조방법 |
CN104576761B (zh) * | 2015-02-06 | 2018-05-08 | 合肥京东方光电科技有限公司 | 薄膜晶体管及其制造方法、显示基板和显示装置 |
CN107134461A (zh) * | 2017-06-28 | 2017-09-05 | 深圳市华星光电技术有限公司 | 薄膜晶体管阵列基板及其制备方法、oled显示装置 |
US10566401B2 (en) | 2017-06-28 | 2020-02-18 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Thin film transistor array substrate and preparing method therefor, and OLED display device |
CN107342297A (zh) * | 2017-06-28 | 2017-11-10 | 深圳市华星光电半导体显示技术有限公司 | 薄膜晶体管阵列基板及其制备方法、显示装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60213062A (ja) * | 1984-04-09 | 1985-10-25 | Hosiden Electronics Co Ltd | 薄膜トランジスタの製造方法 |
KR950026032A (ko) * | 1994-02-25 | 1995-09-18 | 김광호 | 다결정실리콘 박막트랜지스터의 제조방법 |
JP3002099B2 (ja) * | 1994-10-13 | 2000-01-24 | 株式会社フロンテック | 薄膜トランジスタおよびそれを用いた液晶表示装置 |
KR100205521B1 (ko) * | 1996-04-08 | 1999-07-01 | 구자홍 | 박막트랜지스터 및 그 제조방법 |
GB0000292D0 (en) * | 2000-01-07 | 2000-03-01 | Koninkl Philips Electronics Nv | Top gate thin-film transistor and method of producing the same |
JP2004071696A (ja) * | 2002-08-02 | 2004-03-04 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
KR100611224B1 (ko) * | 2003-11-22 | 2006-08-09 | 삼성에스디아이 주식회사 | 금속 유도 측면 결정화 방법을 이용한 박막 트랜지스터 및그의 제조 방법 |
JP2005159162A (ja) * | 2003-11-27 | 2005-06-16 | Toshiba Matsushita Display Technology Co Ltd | 表示装置及びその製造方法 |
-
2005
- 2005-01-07 KR KR1020050001851A patent/KR100703467B1/ko active IP Right Grant
-
2006
- 2006-01-09 US US11/327,384 patent/US20060151790A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
KR100703467B1 (ko) | 2007-04-03 |
US20060151790A1 (en) | 2006-07-13 |
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