KR20060053097A - 반도체장치 및 그 제조방법 - Google Patents

반도체장치 및 그 제조방법 Download PDF

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Publication number
KR20060053097A
KR20060053097A KR1020050075625A KR20050075625A KR20060053097A KR 20060053097 A KR20060053097 A KR 20060053097A KR 1020050075625 A KR1020050075625 A KR 1020050075625A KR 20050075625 A KR20050075625 A KR 20050075625A KR 20060053097 A KR20060053097 A KR 20060053097A
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KR
South Korea
Prior art keywords
body contact
insulating film
silicide
semiconductor layer
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020050075625A
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English (en)
Korean (ko)
Inventor
타카시 이뽀시
토시아키 이와마쓰
시게토 마에가와
Original Assignee
가부시끼가이샤 르네사스 테크놀로지
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 가부시끼가이샤 르네사스 테크놀로지 filed Critical 가부시끼가이샤 르네사스 테크놀로지
Publication of KR20060053097A publication Critical patent/KR20060053097A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
KR1020050075625A 2004-08-27 2005-08-18 반도체장치 및 그 제조방법 Withdrawn KR20060053097A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004248181A JP2006066691A (ja) 2004-08-27 2004-08-27 半導体装置およびその製造方法
JPJP-P-2004-00248181 2004-08-27

Publications (1)

Publication Number Publication Date
KR20060053097A true KR20060053097A (ko) 2006-05-19

Family

ID=35941866

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050075625A Withdrawn KR20060053097A (ko) 2004-08-27 2005-08-18 반도체장치 및 그 제조방법

Country Status (5)

Country Link
US (2) US7402865B2 (cg-RX-API-DMAC7.html)
JP (1) JP2006066691A (cg-RX-API-DMAC7.html)
KR (1) KR20060053097A (cg-RX-API-DMAC7.html)
CN (1) CN1741277A (cg-RX-API-DMAC7.html)
TW (1) TW200625648A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10153334B2 (en) 2015-09-10 2018-12-11 Samsung Display Co., Ltd. Display apparatus and method of manufacturing the same

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006015076B4 (de) * 2006-03-31 2014-03-20 Advanced Micro Devices, Inc. Halbleiterbauelement mit SOI-Transistoren und Vollsubstrattransistoren und ein Verfahren zur Herstellung
JP5171232B2 (ja) * 2006-12-15 2013-03-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100857229B1 (ko) 2007-05-28 2008-09-05 삼성전자주식회사 반도체 소자 및 그 형성방법
JP5286701B2 (ja) 2007-06-27 2013-09-11 ソニー株式会社 半導体装置および半導体装置の製造方法
JP2009032962A (ja) * 2007-07-27 2009-02-12 Panasonic Corp 半導体装置及びその製造方法
US7910995B2 (en) * 2008-04-24 2011-03-22 Fairchild Semiconductor Corporation Structure and method for semiconductor power devices
US7964897B2 (en) * 2008-07-22 2011-06-21 Honeywell International Inc. Direct contact to area efficient body tie process flow
US7999320B2 (en) * 2008-12-23 2011-08-16 International Business Machines Corporation SOI radio frequency switch with enhanced signal fidelity and electrical isolation
US8680617B2 (en) * 2009-10-06 2014-03-25 International Business Machines Corporation Split level shallow trench isolation for area efficient body contacts in SOI MOSFETS
US8741725B2 (en) 2010-11-10 2014-06-03 International Business Machines Corporation Butted SOI junction isolation structures and devices and method of fabrication
JP5736808B2 (ja) * 2011-02-02 2015-06-17 富士通セミコンダクター株式会社 半導体装置及びその製造方法
CN102522365B (zh) * 2012-01-12 2013-12-11 重庆大学 碲基复合薄膜作为soi材料的应用及其功率器件
KR20140026846A (ko) 2012-08-23 2014-03-06 삼성전자주식회사 광소자
KR20150047285A (ko) * 2013-10-24 2015-05-04 에스케이하이닉스 주식회사 반도체 장치와 이의 제조방법 및 동작방법
US9177968B1 (en) 2014-09-19 2015-11-03 Silanna Semiconductor U.S.A., Inc. Schottky clamped radio frequency switch

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3184348B2 (ja) 1992-12-28 2001-07-09 三菱電機株式会社 半導体装置およびその製造方法
US5559368A (en) * 1994-08-30 1996-09-24 The Regents Of The University Of California Dynamic threshold voltage mosfet having gate to body connection for ultra-low voltage operation
US5573961A (en) * 1995-11-09 1996-11-12 Taiwan Semiconductor Manufacturing Company Ltd. Method of making a body contact for a MOSFET device fabricated in an SOI layer
US5753955A (en) * 1996-12-19 1998-05-19 Honeywell Inc. MOS device having a gate to body connection with a body injection current limiting feature for use on silicon on insulator substrates
JP3216591B2 (ja) * 1997-10-29 2001-10-09 日本電気株式会社 電界効果型トランジスタ
TW362258B (en) * 1998-03-20 1999-06-21 United Microelectronics Corp Silicon trench contact structure on the insulation layer
JP4540146B2 (ja) * 1998-12-24 2010-09-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2001077368A (ja) * 1999-09-03 2001-03-23 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2002033484A (ja) * 2000-07-18 2002-01-31 Mitsubishi Electric Corp 半導体装置
US6664598B1 (en) * 2002-09-05 2003-12-16 International Business Machines Corporation Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10153334B2 (en) 2015-09-10 2018-12-11 Samsung Display Co., Ltd. Display apparatus and method of manufacturing the same

Also Published As

Publication number Publication date
US20060043494A1 (en) 2006-03-02
JP2006066691A (ja) 2006-03-09
US20080261387A1 (en) 2008-10-23
CN1741277A (zh) 2006-03-01
TW200625648A (en) 2006-07-16
US7402865B2 (en) 2008-07-22

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