KR20060050241A - 포토리소그래피용 마스크 블랭크 제조방법 및 마스크블랭크 - Google Patents

포토리소그래피용 마스크 블랭크 제조방법 및 마스크블랭크 Download PDF

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Publication number
KR20060050241A
KR20060050241A KR1020050071635A KR20050071635A KR20060050241A KR 20060050241 A KR20060050241 A KR 20060050241A KR 1020050071635 A KR1020050071635 A KR 1020050071635A KR 20050071635 A KR20050071635 A KR 20050071635A KR 20060050241 A KR20060050241 A KR 20060050241A
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KR
South Korea
Prior art keywords
layer
mask blank
substrate
atomic
photolithography
Prior art date
Application number
KR1020050071635A
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English (en)
Korean (ko)
Inventor
아쉬케 루츠
조벨 프랑크
헤스 귄터
벡커 한스
레노 마르쿠스
슈미트 프랑크
괴츠베르거 올리버
Original Assignee
쇼오트 아게
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쇼오트 아게 filed Critical 쇼오트 아게
Publication of KR20060050241A publication Critical patent/KR20060050241A/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/60—Substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020050071635A 2004-08-06 2005-08-05 포토리소그래피용 마스크 블랭크 제조방법 및 마스크블랭크 KR20060050241A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004038548A DE102004038548A1 (de) 2004-08-06 2004-08-06 Verfahren zur Herstellung eines Maskenblank für photolithographische Anwendungen und Maskenblank
DE102004038548.3 2004-08-06

Publications (1)

Publication Number Publication Date
KR20060050241A true KR20060050241A (ko) 2006-05-19

Family

ID=35853431

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050071635A KR20060050241A (ko) 2004-08-06 2005-08-05 포토리소그래피용 마스크 블랭크 제조방법 및 마스크블랭크

Country Status (4)

Country Link
JP (1) JP2006049910A (ja)
KR (1) KR20060050241A (ja)
DE (1) DE102004038548A1 (ja)
TW (1) TW200628969A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101396849B1 (ko) * 2007-09-28 2014-05-19 주식회사 에스앤에스텍 후면 적층막을 가지는 블랭크 마스크 및 포토마스크와 그제조방법
US8906582B2 (en) 2012-07-30 2014-12-09 SK Hynix Inc. Blank masks for extreme ultra violet lithography, methods of fabricating the same, and methods of correcting registration errors thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008072706A1 (ja) * 2006-12-15 2008-06-19 Asahi Glass Company, Limited Ｅｕｖリソグラフィ用反射型マスクブランク、および該マスクブランク用の機能膜付基板
JP5292747B2 (ja) * 2007-09-14 2013-09-18 凸版印刷株式会社 極端紫外線用反射型フォトマスク
DE102011079933A1 (de) * 2010-08-19 2012-02-23 Carl Zeiss Smt Gmbh Optisches Element für die UV- oder EUV-Lithographie
JP5609663B2 (ja) 2011-01-18 2014-10-22 旭硝子株式会社 ガラス基板保持手段、およびそれを用いたｅｕｖマスクブランクスの製造方法
US8658333B2 (en) * 2012-06-04 2014-02-25 Nanya Technology Corporation Reflective mask
JP6184026B2 (ja) * 2012-07-31 2017-08-23 Hoya株式会社 反射型マスクブランク及びその製造方法、反射型マスクの製造方法、並びに半導体装置の製造方法
JP2015025894A (ja) * 2013-07-25 2015-02-05 株式会社エスケーエレクトロニクス フォトマスク及びフォトマスクの製造方法
DE102016110351B4 (de) 2016-06-03 2019-08-29 Carl Zeiss Meditec Ag Verfahren zur Herstellung eines optischen Elements
JP7057248B2 (ja) * 2018-08-03 2022-04-19 Hoya株式会社 マスクブランク、およびインプリントモールドの製造方法
US11294271B2 (en) 2020-04-30 2022-04-05 Taiwan Semiconductor Manufacturing Co., Ltd. Mask for extreme ultraviolet photolithography

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JPS61151333U (ja) * 1985-03-12 1986-09-18
JPS6370524A (ja) * 1986-09-12 1988-03-30 Fujitsu Ltd レジスト塗布方法
JPH01142636A (ja) * 1987-11-30 1989-06-05 Hoya Corp 露光方法並びにこの露光方法に使用するフォトマスクブランク及びフォトマスクブランクの保持具
JPH021851A (ja) * 1988-06-09 1990-01-08 Nec Corp 電子線露光用マスクブランク
JPH03212916A (ja) * 1990-01-18 1991-09-18 Matsushita Electric Ind Co Ltd 多層薄膜コンデンサ
JPH0440456A (ja) * 1990-06-06 1992-02-10 Matsushita Electron Corp フォトマスクの製造方法
JP3193863B2 (ja) * 1996-01-31 2001-07-30 ホーヤ株式会社 転写マスクの製造方法
JPH09306808A (ja) * 1996-05-14 1997-11-28 Toshiba Mach Co Ltd マスクブランク導通機構
JPH11149152A (ja) * 1997-11-17 1999-06-02 Dainippon Printing Co Ltd 接地方法およびフォトマスクブランクス
AU5597000A (en) * 1999-06-07 2000-12-28 Regents Of The University Of California, The Coatings on reflective mask substrates
JP2001291661A (ja) * 2000-04-07 2001-10-19 Fujitsu Ltd 反射型マスク製造方法
JP3939132B2 (ja) * 2000-11-22 2007-07-04 Ｈｏｙａ株式会社 多層膜付き基板、露光用反射型マスクブランク、露光用反射型マスクおよびその製造方法、並びに半導体の製造方法
US6737201B2 (en) * 2000-11-22 2004-05-18 Hoya Corporation Substrate with multilayer film, reflection type mask blank for exposure, reflection type mask for exposure and production method thereof as well as production method of semiconductor device
US6803156B2 (en) * 2001-08-01 2004-10-12 Infineon Technologies Richmond, Lp Electrostatic damage (ESD) protected photomask
DE10239858B4 (de) * 2002-08-29 2005-08-11 Infineon Technologies Ag Verfahren und Anordnung zur Kompensation von Unebenheiten in der Oberfläche eines Substrates
DE10317792A1 (de) * 2003-04-16 2004-11-11 Schott Glas Maskenrohling zur Verwendung in der EUV-Lithographie und Verfahren zu dessen Herstellung

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101396849B1 (ko) * 2007-09-28 2014-05-19 주식회사 에스앤에스텍 후면 적층막을 가지는 블랭크 마스크 및 포토마스크와 그제조방법
US8906582B2 (en) 2012-07-30 2014-12-09 SK Hynix Inc. Blank masks for extreme ultra violet lithography, methods of fabricating the same, and methods of correcting registration errors thereof

Also Published As

Publication number Publication date
DE102004038548A1 (de) 2006-03-16
TW200628969A (en) 2006-08-16
JP2006049910A (ja) 2006-02-16

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