KR20060049695A - 산성 에칭액 재생방법 및 산성 에칭액 재생장치 - Google Patents
산성 에칭액 재생방법 및 산성 에칭액 재생장치 Download PDFInfo
- Publication number
- KR20060049695A KR20060049695A KR1020050055145A KR20050055145A KR20060049695A KR 20060049695 A KR20060049695 A KR 20060049695A KR 1020050055145 A KR1020050055145 A KR 1020050055145A KR 20050055145 A KR20050055145 A KR 20050055145A KR 20060049695 A KR20060049695 A KR 20060049695A
- Authority
- KR
- South Korea
- Prior art keywords
- acid
- etching solution
- permeate
- etching
- oxalic acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000005530 etching Methods 0.000 title claims abstract description 152
- 238000011069 regeneration method Methods 0.000 title claims abstract description 35
- 239000002253 acid Substances 0.000 title claims description 51
- 230000008929 regeneration Effects 0.000 title claims description 23
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims abstract description 191
- 235000006408 oxalic acid Nutrition 0.000 claims abstract description 64
- 239000007788 liquid Substances 0.000 claims abstract description 62
- 239000012466 permeate Substances 0.000 claims abstract description 46
- 239000012528 membrane Substances 0.000 claims abstract description 22
- 238000001914 filtration Methods 0.000 claims abstract description 17
- 230000002378 acidificating effect Effects 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 12
- 238000002835 absorbance Methods 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 238000005259 measurement Methods 0.000 claims description 4
- 230000001172 regenerating effect Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 48
- 238000001728 nano-filtration Methods 0.000 description 37
- 229910052738 indium Inorganic materials 0.000 description 27
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 27
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 24
- 238000011084 recovery Methods 0.000 description 20
- 239000007864 aqueous solution Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- -1 oxalic acid ions Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- 229940071870 hydroiodic acid Drugs 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 229910001449 indium ion Inorganic materials 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- VXAPDXVBDZRZKP-UHFFFAOYSA-N nitric acid phosphoric acid Chemical compound O[N+]([O-])=O.OP(O)(O)=O VXAPDXVBDZRZKP-UHFFFAOYSA-N 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910001432 tin ion Inorganic materials 0.000 description 1
- 238000004448 titration Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/46—Regeneration of etching compositions
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
- Separation Using Semi-Permeable Membranes (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004188579A JP2006013158A (ja) | 2004-06-25 | 2004-06-25 | 酸性エッチング液再生方法及び酸性エッチング液再生装置 |
| JPJP-P-2004-00188579 | 2004-06-25 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20060049695A true KR20060049695A (ko) | 2006-05-19 |
Family
ID=35718358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020050055145A Withdrawn KR20060049695A (ko) | 2004-06-25 | 2005-06-24 | 산성 에칭액 재생방법 및 산성 에칭액 재생장치 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2006013158A (enExample) |
| KR (1) | KR20060049695A (enExample) |
| CN (1) | CN1712567A (enExample) |
| TW (1) | TW200613582A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100790370B1 (ko) * | 2006-11-09 | 2008-01-02 | 주식회사 에스씨티 | 폐에칭액의 재생장치 및 그 재생방법 |
| KR101021784B1 (ko) * | 2008-10-22 | 2011-03-17 | 주식회사 에스씨티 | 나노막필터를 이용한 에칭액의 재생 장치 및 그 재생방법 |
| KR20160010258A (ko) * | 2014-07-17 | 2016-01-27 | 가부시키가이샤 히라마 리카 켄큐쇼 | 에칭액 처리장치, 에칭액 관리방법 및 에칭액의 성분농도 측정방법 |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008208396A (ja) * | 2007-02-23 | 2008-09-11 | Kobelco Eco-Solutions Co Ltd | インジウムの回収方法とその装置 |
| JP5340760B2 (ja) * | 2009-02-12 | 2013-11-13 | 倉敷紡績株式会社 | 流体制御方法及び流体制御装置 |
| JP2011166006A (ja) * | 2010-02-12 | 2011-08-25 | Sumitomo Precision Prod Co Ltd | エッチング方法 |
| JP2012178424A (ja) * | 2011-02-25 | 2012-09-13 | Dainippon Screen Mfg Co Ltd | エッチング液濃度管理装置 |
| JP5795983B2 (ja) | 2012-03-27 | 2015-10-14 | 株式会社Screenホールディングス | 基板処理装置 |
| CN105278566A (zh) * | 2014-07-17 | 2016-01-27 | 株式会社平间理化研究所 | 蚀刻液管理装置、溶解金属浓度测定装置及测定方法 |
| KR20160010257A (ko) * | 2014-07-17 | 2016-01-27 | 가부시키가이샤 히라마 리카 켄큐쇼 | 에칭액 관리장치, 용해금속 농도 측정장치 및 용해금속 농도 측정방법 |
| KR20160010259A (ko) | 2014-07-17 | 2016-01-27 | 가부시키가이샤 히라마 리카 켄큐쇼 | 고체입자 회수 제거장치, 액체 관리장치 및 에칭액 관리장치 |
| CN105845604B (zh) * | 2016-03-10 | 2019-05-07 | 深圳市华星光电技术有限公司 | 一种蚀刻过程中酸浓度的监控方法及系统 |
| CN106399984B (zh) * | 2016-08-30 | 2019-06-25 | 嘉善天晟精密铸件有限公司 | 一种金属铸件表面钝化装置和方法 |
| CN106399998B (zh) * | 2016-08-30 | 2019-03-12 | 嘉善天晟精密铸件有限公司 | 一种金属铸件表面钝化方法 |
| CN106245010B (zh) * | 2016-08-30 | 2019-02-19 | 嘉善天晟精密铸件有限公司 | 一种金属铸件表面钝化装置 |
| CN106399999B (zh) * | 2016-08-30 | 2019-07-16 | 嘉善天晟精密铸件有限公司 | 一种用于金属铸件表面处理的回收组件 |
| CN110072342B (zh) * | 2019-04-30 | 2024-03-01 | 昆山沪利微电有限公司 | 一种用于pcb板制作的加工装置 |
| EP3771749A1 (de) | 2019-07-29 | 2021-02-03 | Ewald Dörken Ag | Verfahren zur passivierung metallischer substrate |
| CN113046563A (zh) * | 2021-03-11 | 2021-06-29 | 苏州晶洲装备科技有限公司 | 一种刻蚀液再生装置、刻蚀系统装置和刻蚀方法 |
| CN116153812A (zh) * | 2022-12-29 | 2023-05-23 | 华灿光电(浙江)有限公司 | 湿法刻蚀装置和湿法刻蚀的控制方法 |
-
2004
- 2004-06-25 JP JP2004188579A patent/JP2006013158A/ja active Pending
-
2005
- 2005-06-21 TW TW094120661A patent/TW200613582A/zh unknown
- 2005-06-24 CN CNA2005100809375A patent/CN1712567A/zh active Pending
- 2005-06-24 KR KR1020050055145A patent/KR20060049695A/ko not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100790370B1 (ko) * | 2006-11-09 | 2008-01-02 | 주식회사 에스씨티 | 폐에칭액의 재생장치 및 그 재생방법 |
| KR101021784B1 (ko) * | 2008-10-22 | 2011-03-17 | 주식회사 에스씨티 | 나노막필터를 이용한 에칭액의 재생 장치 및 그 재생방법 |
| KR20160010258A (ko) * | 2014-07-17 | 2016-01-27 | 가부시키가이샤 히라마 리카 켄큐쇼 | 에칭액 처리장치, 에칭액 관리방법 및 에칭액의 성분농도 측정방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006013158A (ja) | 2006-01-12 |
| TW200613582A (en) | 2006-05-01 |
| CN1712567A (zh) | 2005-12-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 20050624 |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |