KR20060016129A - 단일 주파수 레이저 피닝방법 - Google Patents
단일 주파수 레이저 피닝방법 Download PDFInfo
- Publication number
- KR20060016129A KR20060016129A KR1020060009108A KR20060009108A KR20060016129A KR 20060016129 A KR20060016129 A KR 20060016129A KR 1020060009108 A KR1020060009108 A KR 1020060009108A KR 20060009108 A KR20060009108 A KR 20060009108A KR 20060016129 A KR20060016129 A KR 20060016129A
- Authority
- KR
- South Korea
- Prior art keywords
- pulse
- laser
- resonator
- substantially constant
- pulses
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 34
- 230000003287 optical effect Effects 0.000 claims description 34
- 230000008859 change Effects 0.000 claims description 8
- 230000010355 oscillation Effects 0.000 abstract description 42
- 230000001939 inductive effect Effects 0.000 abstract description 4
- 230000010287 polarization Effects 0.000 description 32
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 20
- 238000002310 reflectometry Methods 0.000 description 12
- 230000005855 radiation Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000005350 fused silica glass Substances 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 230000002745 absorbent Effects 0.000 description 2
- 239000002250 absorbent Substances 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 238000005480 shot peening Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910001008 7075 aluminium alloy Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- HQWUQSSKOBTIHZ-UHFFFAOYSA-N gadolinium terbium Chemical compound [Gd][Tb] HQWUQSSKOBTIHZ-UHFFFAOYSA-N 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000001976 improved effect Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000402 monopotassium phosphate Inorganic materials 0.000 description 1
- 235000019796 monopotassium phosphate Nutrition 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M1/00—Substation equipment, e.g. for use by subscribers
- H04M1/02—Constructional features of telephone sets
- H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
- H04M1/0206—Portable telephones comprising a plurality of mechanically joined movable body parts, e.g. hinged housings
- H04M1/0208—Portable telephones comprising a plurality of mechanically joined movable body parts, e.g. hinged housings characterized by the relative motions of the body parts
- H04M1/0214—Foldable telephones, i.e. with body parts pivoting to an open position around an axis parallel to the plane they define in closed position
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/115—Q-switching using intracavity electro-optic devices
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D10/00—Modifying the physical properties by methods other than heat treatment or deformation
- C21D10/005—Modifying the physical properties by methods other than heat treatment or deformation by laser shock processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/08—Construction or shape of optical resonators or components thereof
- H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors
- H01S3/083—Ring lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
- H01S3/2308—Amplifier arrangements, e.g. MOPA
- H01S3/2325—Multi-pass amplifiers, e.g. regenerative amplifiers
- H01S3/2333—Double-pass amplifiers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04M—TELEPHONIC COMMUNICATION
- H04M1/00—Substation equipment, e.g. for use by subscribers
- H04M1/02—Constructional features of telephone sets
- H04M1/0202—Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
- H04M1/0206—Portable telephones comprising a plurality of mechanically joined movable body parts, e.g. hinged housings
- H04M1/0208—Portable telephones comprising a plurality of mechanically joined movable body parts, e.g. hinged housings characterized by the relative motions of the body parts
- H04M1/0225—Rotatable telephones, i.e. the body parts pivoting to an open position around an axis perpendicular to the plane they define in closed position
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D2221/00—Treating localised areas of an article
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10038—Amplitude control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10076—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating using optical phase conjugation, e.g. phase conjugate reflection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/105—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling the mutual position or the reflecting properties of the reflectors of the cavity, e.g. by controlling the cavity length
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/107—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using electro-optic devices, e.g. exhibiting Pockels or Kerr effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/1305—Feedback control systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/136—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling devices placed within the cavity
- H01S3/137—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling devices placed within the cavity for stabilising of frequency
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thermal Sciences (AREA)
- Signal Processing (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Lasers (AREA)
- Laser Beam Processing (AREA)
- Laser Surgery Devices (AREA)
Abstract
Description
Claims (12)
- 단일 주파수를 가지며, 진폭과 펄스 폭이 실질적으로 일정한 연속된 시드 펄스를 생성하고;레이저 증폭기에 상기 연속된 시드 펄스를 공급하여 연속된 단일 주파수의 고 에너지 출력 펄스를 유도하고; 그리고상기 시편을 위치시켜 상기 출력 펄스의 도움으로 시편 표면의 타겟 영역을 피닝하는 것을 포함하여 구성되는시편 표면의 레이저 충격 피닝 방법.
- 제1항에 있어서, 상기 연속된 시드 펄스는 상기 표면의 타겟 영역에 피닝하기 위하여 위치시키는 동안 5% 이하의 진폭 변화를 갖는 레이저 충격 피닝 방법.
- 제1항에 있어서, 상기 연속된 시드 펄스는 상기 표면의 타겟 영역에 피닝하기 위하여 위치시키는 동안 5% 이하의 펄스 폭 변화를 갖는 레이저 충격 피닝 방법.
- 제1항에 있어서, 상기 연속된 시드 펄스는 상기 표면의 타겟 영역에 피닝하기 위하여 위치시키는 동안 1% 이하의 진폭 변화를 갖는 레이저 충격 피닝 방법.
- 제1항에 있어서, 상기 연속된 시드 펄스는 상기 표면의 타겟 영역에 피닝하기 위하여 위치시키는 동안 1% 이하의 펄스 폭 변화를 갖는 레이저 충격 피닝 방법.
- 제1항에 있어서, 상기 연속된 시드 펄스는 1초당 1펄스 이상의 반복율을 가지며, 다수의 시편이 피닝되는 작업 환경에서 중요한 시기에 대해 작업자가 광학적 파라미터를 조절하지 않고도 상기 시드 펄스 소스의 진폭과 펄스 폭을 실질적으로 일정하게 유지하는 레이저 충격 피닝 방법.
- 제1항에 있어서, 작업 환경의 다수 시편에 대해 3일 이상 동안 작업자가 상기 시드 펄스 소스의 광학적 파라미터를 조절하지 않고도 진폭과 펄스 폭을 실질적으로 일정하게 유지하는 레이저 충격 피닝 방법.
- 제1항에 있어서, 상기 연속된 시드 펄스는 작업 환경에서 적어도 1 백만 펄스의 연속된 동작에 대하여 진폭과 펄스 폭을 실질적으로 일정하게 유지하는 레이저 충격 피닝 방법.
- 제1항에 있어서, 상기 연속된 고전력 출력 펄스는 작업 환경에서 적어도 1 백만 펄스의 연속된 동작에 대하여 펄스당 약 10 - 100 jouls의 범위에서 실질적으로 일정한 에너지를 갖는 펄스를 포함하여 구성되는 레이저 충격 피닝 방법.
- 제1항에 있어서, 상기 연속된 고전력 출력 펄스는 작업 환경에서 적어도 1 백만 펄스의 연속된 동작에 대하여 약 20 - 30 nanoseconds의 범위에서 실질적으로 일정한 펄스 폭을 갖는 펄스를 포함하여 구성되는 레이저 충격 피닝 방법.
- 제1항에 있어서, 상기 연속된 고전력 출력 펄스는 작업 환경에서 중요한 시기동안 작업자의 개입없이 펄스당 약 10 - 100 jouls의 범위에서 실질적으로 일정한 에너지를 가지며 약 20 - 30 nanoseconds의 범위에서 실질적으로 일정한 펄스 폭을 갖는 펄스를 포함하여 구성되는 레이저 충격 피닝 방법.
- 제1항에 있어서, 상기 연속된 고전력 출력 펄스는 작업 환경에서 적어도 3일 동안 펄스당 약 10 - 100 jouls의 범위에서 실질적으로 일정한 에너지를 가지며 약 20 - 30 nanoseconds의 범위에서 실질적으로 일정한 펄스 폭을 갖는 펄스를 포함하여 구성되는 레이저 충격 피닝 방법.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US47149003P | 2003-05-16 | 2003-05-16 | |
US60/471,490 | 2003-05-16 | ||
US10/696,989 US7180918B2 (en) | 2003-05-16 | 2003-10-30 | Self-seeded single-frequency solid-state ring laser and system using same |
US10/696,989 | 2003-10-30 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040034954A Division KR100715371B1 (ko) | 2003-05-16 | 2004-05-17 | 자기-시드 단일 주파수 고상 링 레이저 및 이를 이용한 시스템 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060016129A true KR20060016129A (ko) | 2006-02-21 |
KR100945295B1 KR100945295B1 (ko) | 2010-03-04 |
Family
ID=33032731
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040034954A KR100715371B1 (ko) | 2003-05-16 | 2004-05-17 | 자기-시드 단일 주파수 고상 링 레이저 및 이를 이용한 시스템 |
KR1020060009108A KR100945295B1 (ko) | 2003-05-16 | 2006-01-27 | 단일 주파수 레이저 피닝 방법 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040034954A KR100715371B1 (ko) | 2003-05-16 | 2004-05-17 | 자기-시드 단일 주파수 고상 링 레이저 및 이를 이용한 시스템 |
Country Status (8)
Country | Link |
---|---|
US (3) | US7180918B2 (ko) |
EP (1) | EP1478062B1 (ko) |
JP (1) | JP4040601B2 (ko) |
KR (2) | KR100715371B1 (ko) |
AT (1) | ATE473530T1 (ko) |
DE (1) | DE602004027971D1 (ko) |
ES (1) | ES2347554T3 (ko) |
TW (1) | TWI244814B (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101898682B1 (ko) | 2017-06-28 | 2018-09-14 | 주식회사 풍산 | 강관의 레이저 피닝 장치 및 그 방법 |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050205529A1 (en) * | 2004-03-22 | 2005-09-22 | The Regents Of The University Of California | Calibration system for laser peening |
US20100193481A1 (en) * | 2004-11-29 | 2010-08-05 | Electro Scientific Industries, Inc. | Laser constructed with multiple output couplers to generate multiple output beams |
DE102005057077B4 (de) | 2004-11-30 | 2011-04-14 | Hyundai Motor Co. | Vorrichtung zum Scannen von Zuständen von Motoröl |
US8111986B1 (en) | 2004-12-22 | 2012-02-07 | Clariphy Communications, Inc. | Testing of transmitters for communication links by software simulation of reference channel and/or reference receiver |
US7853149B2 (en) * | 2005-03-08 | 2010-12-14 | Clariphy Communications, Inc. | Transmitter frequency peaking for optical fiber channels |
US7876803B1 (en) * | 2007-03-21 | 2011-01-25 | Lockheed Martin Corporation | High-power, pulsed ring fiber oscillator and method |
CA2632393A1 (en) * | 2005-12-05 | 2007-06-14 | Adelaide Research And Innovation Pty Ltd | Q-switched laser |
DE102005059501A1 (de) * | 2005-12-06 | 2007-06-14 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Mehrfachpuls-Lichtemissionsvorrichtung und Verfahren zur Erzeugung einer Pulsfolge von Laserlicht-Mehrfachpulsen |
DE102006006582B4 (de) * | 2006-02-13 | 2009-06-10 | Jenoptik Laser, Optik, Systeme Gmbh | Laser und Verfahren zur Erzeugung gepulster Laserstrahlung |
US7897895B2 (en) * | 2006-05-01 | 2011-03-01 | General Electric Company | System and method for controlling the power level of a laser apparatus in a laser shock peening process |
JP4811111B2 (ja) * | 2006-05-11 | 2011-11-09 | 三菱電機株式会社 | 再生増幅器およびレーザ装置 |
US7732731B2 (en) * | 2006-09-15 | 2010-06-08 | Gsi Group Corporation | Method and system for laser processing targets of different types on a workpiece |
US7692854B2 (en) * | 2007-10-22 | 2010-04-06 | Coherent, Inc. | Repetitively pulsed laser and amplifier with dual resonator for pulse-energy management |
US7649924B2 (en) * | 2006-11-15 | 2010-01-19 | Coherent, Inc. | First-pulse suppression in a regenerative amplifier |
US8723073B2 (en) * | 2008-02-07 | 2014-05-13 | Cymer, Llc | Illumination apparatus and method for controlling energy of a laser source |
GB0813980D0 (en) | 2008-07-31 | 2008-09-10 | Univ St Andrews | Control of relaxation oscillations in intracavity optical parametric oscillato rs |
GB0906482D0 (en) | 2009-04-15 | 2009-05-20 | Univ St Andrews | intra-cavity optical parametric oscillator |
KR101049195B1 (ko) * | 2009-09-09 | 2011-07-14 | 주식회사 자원메디칼 | 레이저 장치 |
JP5765730B2 (ja) * | 2010-03-11 | 2015-08-19 | ギガフォトン株式会社 | 極端紫外光生成装置 |
WO2011133358A2 (en) * | 2010-04-19 | 2011-10-27 | Massachusetts Institute Of Technology | Mode-locking with reduced nonlinearity using gain-matched output couplers |
JP2012038866A (ja) * | 2010-08-05 | 2012-02-23 | High Energy Accelerator Research Organization | レーザー発振装置 |
JP2013065804A (ja) * | 2010-12-20 | 2013-04-11 | Gigaphoton Inc | レーザ装置およびそれを備える極端紫外光生成システム |
WO2013082566A1 (en) * | 2011-12-01 | 2013-06-06 | Huawei Technologies Co., Ltd. | Self-seeded colorless burst-mode transmitter using reflective semiconductor optical amplifier and injection-locked fabry-perot laser |
CN103203543B (zh) * | 2013-02-04 | 2015-03-11 | 中国航空工业集团公司北京航空制造工程研究所 | 一种用于激光冲击强化叶片的水约束层的喷射方法和装置 |
JP6246561B2 (ja) * | 2013-11-01 | 2017-12-13 | 株式会社ディスコ | レーザー加工方法およびレーザー加工装置 |
US11858065B2 (en) | 2015-01-09 | 2024-01-02 | Lsp Technologies, Inc. | Method and system for use in laser shock peening and laser bond inspection process |
CA2973382A1 (en) | 2015-01-09 | 2016-07-14 | Lsp Technologies, Inc. | Method and apparatus for use in laser shock peening processes |
WO2017171595A1 (en) * | 2016-03-30 | 2017-10-05 | Saab Ab | Q-switched laser with stabilized output energy |
US10633881B1 (en) | 2017-03-24 | 2020-04-28 | Jeanne Cairns Sinquefield | Easy to assemble, above ground extreme weather shelter |
US10361537B2 (en) | 2017-10-23 | 2019-07-23 | Microsoft Technology Licensing, Llc | Dynamic supply voltage control circuit for laser diode |
US10658814B2 (en) | 2017-10-23 | 2020-05-19 | Microsoft Technology Licensing, Llc | Laser diode priming to reduce latency |
KR102496546B1 (ko) * | 2017-12-19 | 2023-02-06 | 비아 메카닉스 가부시키가이샤 | 레이저 가공장치, 레이저 가공방법 및 이를 위한 프로그램을 기록한 기록매체 |
CN112355483B (zh) * | 2020-10-30 | 2021-08-24 | 北京理工大学 | 一种飞秒激光在硅表面制备亚微米同心圆环的方法 |
Family Cites Families (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3478280A (en) * | 1966-10-14 | 1969-11-11 | Gen Electric | Pulse width modulated laser |
US3824492A (en) * | 1972-06-22 | 1974-07-16 | United Aircraft Corp | Solid state single frequency laser |
US3724930A (en) * | 1972-07-21 | 1973-04-03 | Us Air Force | Method of forming and cooling pinhole spatial filter for high power laser |
US3836866A (en) * | 1973-01-29 | 1974-09-17 | Gte Sylvania Inc | Q-switched laser mode selection system |
JPS6025133B2 (ja) * | 1976-04-28 | 1985-06-17 | 旭光学工業株式会社 | マニピユレタ− |
US4191928A (en) * | 1978-01-11 | 1980-03-04 | The United States Of America As Represented By The United States Department Of Energy | Laser system using regenerative amplifier |
US4401477A (en) * | 1982-05-17 | 1983-08-30 | Battelle Development Corporation | Laser shock processing |
US4539462A (en) * | 1983-01-24 | 1985-09-03 | Westinghouse Electric Corp. | Robotic laser beam delivery apparatus |
US4623229A (en) * | 1983-09-29 | 1986-11-18 | Photon Sources, Inc. | Articulated laser arm |
US4698479A (en) * | 1984-02-06 | 1987-10-06 | Spectra-Physics, Inc. | Beam delivery system for a CO2 laser |
US4794222A (en) * | 1986-06-30 | 1988-12-27 | Manabu Funayama | Laser beam machining apparatus |
JPS6343384A (ja) | 1986-08-09 | 1988-02-24 | Fuji Electric Co Ltd | 固体レ−ザ発振装置の集光装置 |
US4803694A (en) * | 1987-07-08 | 1989-02-07 | Amada Company, Limited | Laser resonator |
GB8813315D0 (en) * | 1988-06-06 | 1988-07-13 | Serrano J P | Beam delivery system |
JPH02108489A (ja) * | 1988-10-17 | 1990-04-20 | Fanuc Ltd | 多関節型レーザロボットの手首機構 |
JPH02260479A (ja) | 1989-03-30 | 1990-10-23 | Toshiba Corp | レーザ発振装置 |
US4937421A (en) * | 1989-07-03 | 1990-06-26 | General Electric Company | Laser peening system and method |
US5022033A (en) * | 1989-10-30 | 1991-06-04 | The United States Of America As Represented By The United States Department Of Energy | Ring laser having an output at a single frequency |
DE69020581T4 (de) * | 1990-01-11 | 1996-06-13 | Battelle Memorial Institute | Verbesserung von materialeigenschaften. |
US5075893A (en) * | 1990-12-07 | 1991-12-24 | Battelle Memorial Institute | Unpolarized laser oscillators |
CA2103670A1 (en) * | 1991-02-28 | 1992-08-29 | Harold M. Epstein | Laser systems |
US5142118A (en) * | 1991-05-14 | 1992-08-25 | Progressive Tool & Industries Co. | Laser welding unit |
DE4129278A1 (de) * | 1991-09-03 | 1993-03-11 | Weidmueller Interface | Werkzeugkopf mit automatisch verstellbarer fokussierungsoptik |
US5285310A (en) * | 1992-01-21 | 1994-02-08 | Regents Of The University Of California | High power regenerative laser amplifier |
US5239408A (en) * | 1992-01-21 | 1993-08-24 | Regents Of The University Of California | High power, high beam quality regenerative amplifier |
GB2276973A (en) * | 1993-03-20 | 1994-10-12 | Gec Ferranti Defence Syst | A pulsed laser |
JPH0745897A (ja) * | 1993-07-30 | 1995-02-14 | Matsushita Electric Ind Co Ltd | ポッケルスセルqスイッチ付きyagレーザ発振器 |
US5449879A (en) * | 1993-10-07 | 1995-09-12 | Laser Machining, Inc. | Laser beam delivery system for heat treating work surfaces |
EP0964067B1 (en) * | 1993-12-07 | 2002-09-04 | Toyota Jidosha Kabushiki Kaisha | Laser shock processing method utilizing light absorbing material film |
JP3373638B2 (ja) | 1994-03-09 | 2003-02-04 | 株式会社東芝 | レーザーピーニング方法 |
JPH08148740A (ja) * | 1994-11-21 | 1996-06-07 | Miyachi Technos Corp | 固体レーザマーキング装置 |
JP3141715B2 (ja) * | 1994-12-22 | 2001-03-05 | 松下電器産業株式会社 | レーザ加工方法 |
US6215097B1 (en) * | 1994-12-22 | 2001-04-10 | General Electric Company | On the fly laser shock peening |
US5525429A (en) * | 1995-03-06 | 1996-06-11 | General Electric Company | Laser shock peening surface enhancement for gas turbine engine high strength rotor alloy repair |
US5569018A (en) * | 1995-03-06 | 1996-10-29 | General Electric Company | Technique to prevent or divert cracks |
FR2735056B1 (fr) * | 1995-06-09 | 1997-08-22 | Bouygues Offshore | Installation pour travailler une zone d'un tube au moyen d'un faisceau laser et application aux tubes d'une canalisation sur une barge de pose en mer ou de recuperation de cette canalisation. |
US5689363A (en) * | 1995-06-12 | 1997-11-18 | The Regents Of The University Of California | Long-pulse-width narrow-bandwidth solid state laser |
US5741559A (en) * | 1995-10-23 | 1998-04-21 | Lsp Technologies, Inc. | Laser peening process and apparatus |
JP3728006B2 (ja) * | 1996-03-29 | 2005-12-21 | ゼネラル・エレクトリック・カンパニイ | ガスタービン機関のファンの羽根 |
US5674328A (en) * | 1996-04-26 | 1997-10-07 | General Electric Company | Dry tape covered laser shock peening |
US5674329A (en) * | 1996-04-26 | 1997-10-07 | General Electric Company | Adhesive tape covered laser shock peening |
JPH10242913A (ja) * | 1997-02-24 | 1998-09-11 | Ando Electric Co Ltd | 光周波数安定化光源 |
US5986234A (en) * | 1997-03-28 | 1999-11-16 | The Regents Of The University Of California | High removal rate laser-based coating removal system |
JPH1197782A (ja) | 1997-09-24 | 1999-04-09 | Hamamatsu Photonics Kk | 固体レーザ装置 |
US6064035A (en) * | 1997-12-30 | 2000-05-16 | Lsp Technologies, Inc. | Process chamber for laser peening |
US6188704B1 (en) * | 1998-01-26 | 2001-02-13 | Rocky Mountain Instrument Co. | Diode-pumped laser drive |
US7099593B1 (en) * | 1998-02-17 | 2006-08-29 | University Of Michigan | Self-synchronization of an optical packet network using seed pulses extracted from within the packets |
US6122097A (en) * | 1998-04-16 | 2000-09-19 | Positive Light, Inc. | System and method for amplifying an optical pulse using a diode-pumped, Q-switched, extracavity frequency-doubled laser to pump an optical amplifier |
US6198069B1 (en) * | 1998-08-13 | 2001-03-06 | The Regents Of The University Of California | Laser beam temporal and spatial tailoring for laser shock processing |
JP2000117480A (ja) * | 1998-10-15 | 2000-04-25 | Fanuc Ltd | レーザ加工機 |
US6373876B1 (en) * | 1998-10-26 | 2002-04-16 | Lsp Technologies, Inc. | Single mode oscillator for a laser peening laser |
US6259055B1 (en) * | 1998-10-26 | 2001-07-10 | Lsp Technologies, Inc. | Apodizers for laser peening systems |
JP3940504B2 (ja) * | 1998-10-30 | 2007-07-04 | 株式会社東芝 | 光ファイバ伝送式レーザ装置、パルスレーザ発振器および光ファイバ導光装置 |
JP2000164958A (ja) | 1998-11-26 | 2000-06-16 | Matsushita Electric Ind Co Ltd | Ld励起レーザ発振方法とレーザ発振器、これによるレーザ加工装置 |
US6282224B1 (en) * | 1999-01-13 | 2001-08-28 | Raytheon Company | Non-planar Q-switched ring laser system |
US6197133B1 (en) * | 1999-02-16 | 2001-03-06 | General Electric Company | Short-pulse high-peak laser shock peening |
US6381391B1 (en) * | 1999-02-19 | 2002-04-30 | The Regents Of The University Of Michigan | Method and system for generating a broadband spectral continuum and continuous wave-generating system utilizing same |
US6198756B1 (en) * | 1999-04-15 | 2001-03-06 | Coherent, Inc. | CW far-UV laser system with two active resonators |
US6392192B1 (en) * | 1999-09-15 | 2002-05-21 | W. A. Whitney Co. | Real time control of laser beam characteristics in a laser-equipped machine tool |
US6384368B1 (en) * | 1999-05-05 | 2002-05-07 | Lsp Technologies, Inc. | Laser amplifier with variable and matched wavelength pumping |
US6281471B1 (en) * | 1999-12-28 | 2001-08-28 | Gsi Lumonics, Inc. | Energy-efficient, laser-based method and system for processing target material |
GB0024533D0 (en) | 2000-10-06 | 2000-11-22 | Geola Uab | A laser system |
US6693928B2 (en) * | 2000-10-10 | 2004-02-17 | Spectrasensors, Inc. | Technique for filtering chirp from optical signals |
JP2002208750A (ja) * | 2000-11-10 | 2002-07-26 | Keyence Corp | レーザー発振器およびそのレーザーパルス制御方法 |
JP3383832B2 (ja) * | 2000-12-25 | 2003-03-10 | 川崎重工業株式会社 | レーザ照射装置 |
JP2002208749A (ja) | 2001-01-12 | 2002-07-26 | Mitsubishi Heavy Ind Ltd | 波長変換素子を有するレーザ装置 |
US6657160B2 (en) | 2001-01-25 | 2003-12-02 | The Regents Of The University Of California | Laser peening of components of thin cross-section |
JP2002246677A (ja) * | 2001-02-14 | 2002-08-30 | Toshiba Corp | レーザ発振器とレーザ加工装置 |
US6528763B1 (en) * | 2001-04-30 | 2003-03-04 | Lsp Technologies, Inc. | Laser search peening for exfoliation corrosion detection |
US6867390B2 (en) * | 2001-04-30 | 2005-03-15 | Lsp Technologies, Inc | Automated positioning of mobile laser peening head |
JP2002344051A (ja) | 2001-05-11 | 2002-11-29 | Japan Atom Energy Res Inst | 光共振器、それを備えたレーザー発振器及び波長変換装置 |
KR100415088B1 (ko) * | 2001-10-15 | 2004-01-13 | 주식회사 하이닉스반도체 | 반도체장치의 제조방법 |
-
2003
- 2003-10-30 US US10/696,989 patent/US7180918B2/en not_active Expired - Lifetime
-
2004
- 2004-05-06 TW TW093112757A patent/TWI244814B/zh not_active IP Right Cessation
- 2004-05-10 ES ES04252704T patent/ES2347554T3/es not_active Expired - Lifetime
- 2004-05-10 DE DE602004027971T patent/DE602004027971D1/de not_active Expired - Lifetime
- 2004-05-10 AT AT04252704T patent/ATE473530T1/de not_active IP Right Cessation
- 2004-05-10 EP EP04252704A patent/EP1478062B1/en not_active Expired - Lifetime
- 2004-05-12 JP JP2004142668A patent/JP4040601B2/ja not_active Expired - Lifetime
- 2004-05-17 KR KR1020040034954A patent/KR100715371B1/ko active IP Right Grant
-
2005
- 2005-10-26 US US11/258,807 patent/US7573001B2/en not_active Expired - Lifetime
-
2006
- 2006-01-27 KR KR1020060009108A patent/KR100945295B1/ko active IP Right Grant
-
2009
- 2009-07-21 US US12/506,530 patent/US8207474B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101898682B1 (ko) | 2017-06-28 | 2018-09-14 | 주식회사 풍산 | 강관의 레이저 피닝 장치 및 그 방법 |
Also Published As
Publication number | Publication date |
---|---|
KR100715371B1 (ko) | 2007-05-08 |
ES2347554T3 (es) | 2010-11-02 |
US20060043079A1 (en) | 2006-03-02 |
EP1478062A3 (en) | 2006-04-26 |
JP4040601B2 (ja) | 2008-01-30 |
US8207474B2 (en) | 2012-06-26 |
EP1478062A2 (en) | 2004-11-17 |
TWI244814B (en) | 2005-12-01 |
ATE473530T1 (de) | 2010-07-15 |
US20040228376A1 (en) | 2004-11-18 |
US7573001B2 (en) | 2009-08-11 |
KR100945295B1 (ko) | 2010-03-04 |
US7180918B2 (en) | 2007-02-20 |
DE602004027971D1 (de) | 2010-08-19 |
JP2005045211A (ja) | 2005-02-17 |
EP1478062B1 (en) | 2010-07-07 |
TW200522456A (en) | 2005-07-01 |
US20090294424A1 (en) | 2009-12-03 |
KR20040099177A (ko) | 2004-11-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100945295B1 (ko) | 단일 주파수 레이저 피닝 방법 | |
EP1905140B1 (en) | Cw-pumped multipass amplifier for a sliced train of mode-locked laser pulses | |
US8130800B2 (en) | Mode-locked solid state lasers using diode laser excitation | |
Zavadilová et al. | Picosecond optical parametric oscillator pumped synchronously, intracavity, by a mode-locked Nd: YVO4 laser | |
KR20160148553A (ko) | 다결정질 tm:ii-vi 재료로 이루어진 수직 입사 장착형 중간 적외선 케르 렌즈 모드 잠금형 레이저 및 다결정질 tm:ii-vi 케르 렌즈 모드 잠금형 레이저의 매개변수를 제어하기 위한 방법 | |
CN110752503B (zh) | 单纵模与非单纵模双脉冲激光交替调q输出方法及激光器 | |
Holder et al. | One joule per Q-switched pulse diode-pumped laser | |
Chen et al. | Joule-level double-pulsed Ho: Tm: LuLF Master-Oscillator-Power-Amplifier (MOPA) for potential spaceborne lidar applications | |
CN111029893B (zh) | 双波长交替调q单纵模输出群脉冲激光器及激光输出方法 | |
CN111048986B (zh) | 一种单纵模调q双脉冲激光输出方法及激光器 | |
GB2401719A (en) | Single frequency ring laser | |
Wang et al. | Fiber coupled 1 kW repetitively acousto-optic Q-switched cw-pumped Nd: YAG rod laser | |
CN110932070A (zh) | 双波长交替调q窄脉冲激光器及输出方法 | |
Wu et al. | Passive Q-switching of a diode-pumped a-cut Nd: YVO4 laser with Cr4+: YAG saturable absorber in a plano-concave cavity | |
Schmitt et al. | Design and performance of a high-repetition-rate single-frequency Yb: YAG microlaser | |
Šulc et al. | Influence of V: YAG saturable absorber orientation on linearly polarized laser Q-switching | |
Eichler et al. | Multi-amplifier arrangements with phase conjugation for power scaling of solid state lasers with high beam qualtiy | |
Dehn et al. | Phase conjugation for high-power solid state lasers with repetition rates in the kHz range | |
Larionov et al. | 50-kHz, 400-μJ, sub-100-fs pulses from a thin disk laser amplifier | |
Maleki et al. | High peak power side diode-pumped pulsed Nd: YAG laser with concave–concave stable resonator | |
Cabaret et al. | Single mode injection seeded Nd: YAG oscillator with an adjustable pulse length between 20 and 50 ns | |
Bakanas et al. | Frequency doubled pulsed single longitudinal mode Nd: YAG laser at 1319 nm with pulse build-up negative feedback controls | |
Mashko et al. | Diode-pumped solid-state lasers with controlled parameters for spectroscopic applications | |
Kong et al. | Coherent Beam Combining Using Phase‐Controlled Stimulated Brillouin Scattering Phase Conjugate Mirror | |
Jelínek et al. | Quasi-continuously pumped passively mode-locked 2.4% doped Nd: YAG oscillator-amplifier system in a bounce geometry |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A107 | Divisional application of patent | ||
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130208 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20140210 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20150206 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20160205 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20170221 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20180208 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20190212 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20200219 Year of fee payment: 11 |