KR20050091579A - 질화물계 발광소자 및 그 제조방법 - Google Patents
질화물계 발광소자 및 그 제조방법 Download PDFInfo
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- KR20050091579A KR20050091579A KR1020040017072A KR20040017072A KR20050091579A KR 20050091579 A KR20050091579 A KR 20050091579A KR 1020040017072 A KR1020040017072 A KR 1020040017072A KR 20040017072 A KR20040017072 A KR 20040017072A KR 20050091579 A KR20050091579 A KR 20050091579A
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- Prior art keywords
- layer
- light emitting
- nitride
- type cladding
- emitting device
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 238000005253 cladding Methods 0.000 claims abstract description 67
- 150000004767 nitrides Chemical class 0.000 claims abstract description 45
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052709 silver Inorganic materials 0.000 claims abstract description 24
- 239000004332 silver Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000004020 conductor Substances 0.000 claims abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 80
- 239000010931 gold Substances 0.000 claims description 54
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 36
- 239000011777 magnesium Substances 0.000 claims description 35
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 30
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 28
- 229910052737 gold Inorganic materials 0.000 claims description 28
- 229910052759 nickel Inorganic materials 0.000 claims description 27
- 239000010948 rhodium Substances 0.000 claims description 26
- 239000010949 copper Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 239000011651 chromium Substances 0.000 claims description 18
- 229910052749 magnesium Inorganic materials 0.000 claims description 18
- 239000010936 titanium Substances 0.000 claims description 18
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 16
- 238000010438 heat treatment Methods 0.000 claims description 16
- 239000011572 manganese Substances 0.000 claims description 16
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 15
- 229910045601 alloy Inorganic materials 0.000 claims description 13
- 239000000956 alloy Substances 0.000 claims description 13
- 239000002019 doping agent Substances 0.000 claims description 13
- 229910052703 rhodium Inorganic materials 0.000 claims description 13
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 12
- 229910052697 platinum Inorganic materials 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 229910052707 ruthenium Inorganic materials 0.000 claims description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 229910052763 palladium Inorganic materials 0.000 claims description 10
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 229910052790 beryllium Inorganic materials 0.000 claims description 9
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 150000002739 metals Chemical class 0.000 claims description 9
- 229910052706 scandium Inorganic materials 0.000 claims description 9
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 9
- 239000006104 solid solution Substances 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 8
- 230000002776 aggregation Effects 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910052793 cadmium Inorganic materials 0.000 claims description 8
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 8
- 229910017052 cobalt Inorganic materials 0.000 claims description 8
- 239000010941 cobalt Substances 0.000 claims description 8
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- 229910052741 iridium Inorganic materials 0.000 claims description 8
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 8
- 229910052746 lanthanum Inorganic materials 0.000 claims description 8
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 8
- 229910052748 manganese Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 238000005054 agglomeration Methods 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 6
- 239000012298 atmosphere Substances 0.000 claims description 5
- 230000002265 prevention Effects 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 3
- 238000004220 aggregation Methods 0.000 claims description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- 238000001994 activation Methods 0.000 abstract description 7
- 230000008901 benefit Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 185
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 23
- 229910002601 GaN Inorganic materials 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 14
- 239000010409 thin film Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 239000002356 single layer Substances 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 229910000480 nickel oxide Inorganic materials 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- -1 nitride compound Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910019080 Mg-H Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000007420 reactivation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (12)
- n형 클래드층과 p형 클래드층 사이에 활성층을 갖는 질화물계 발광소자에 있어서,상기 p형 클래드층 위에 전도성을 갖는 소재로 30마이크로미터 이하의 크기를 갖는 입자형 셀이 상호 이격되게 형성된 격자셀층과;상기 p형클래드층과 상기 격자셀 층 위에 형성된 오믹컨택트층;을 구비하는 것을 특징으로 하는 질화물계 발광소자.
- 제1항에 있어서, 상기 격자셀층은 니켈(Ni), 팔라듐(Pd), 백금(Pt), 금(Au), 루세늄(Ru), 은(Ag), 타이타늄(Ti), 망간(Mn), 코발트(Co), 구리(Cu), 이리듐(Ir), 크롬(Cr), 로듐(Rh), 스칸디움(Sc), 아연(Zn), 카드뮴(Cd), 마그네슘(Mg), 베릴륨(Be), 란탄(La) 원소계열의 금속 또는 이들 중 적어도 하나를 포함하는 합금 또는 고용체 중에서 선택된 적어도 하나의 소재를 적용하여 적어도 한층 이상으로 형성된 것을 특징으로 하는 질화물계 발광소자.
- 제1항 또는 제2항에 있어서, 상기 격자셀층은 50나노미터 이하의 두께로 형성된 것을 특징으로 하는 질화물계 발광소자.
- 제1항에 있어서, 상기 오믹컨택트층은 빛을 투과시킬 수 있는 투명 오믹컨택트층이고, 니켈(Ni), 팔라듐(Pd), 백금(Pt), 금(Au), 은(Ag), 루세늄(Ru), 망간(Mn), 코발트(Co), 구리(Cu), 이리듐(Ir), 크롬(Cr), 로듐(Rh), 스칸디움(Sc), 아연(Zn), 카드뮴(Cd), 마그네슘(Mg), 베릴륨(Be), 란탄(La) 원소계열의 금속 및 이들 중 적어도 하나를 포함하는 합금 또는 고용체, 투명 전도성 산화물, 투명 전도성 질화물 중에서 선택된 적어도 하나의 소재를 적용하여 적어도 한 층 이상으로 형성된 것을 특징으로 하는 질화물계 발광소자.
- 제4항에 있어서, 상기 투명 전도성 산화물은 인듐(In), 주석(Sn), 아연(Zn), 갈륨(Ga), 카드뮴(Cd), 마그네슘(Mg), 베릴륨(Be), 은(Ag), 몰리브덴(Mo), 바나듐(V), 구리(Cu), 이리듐(Ir), 로듐(Rh), 루세늄(Ru), 텅스텐(W), 코발트(Co), 니켈(Ni), 망간(Mn), 알루미늄(Al), 란탄(La) 원소계열의 금속들 중에서 적어도 하나 이상의 성분과 산소(O)가 결합된 것을 포함하고,상기 투명 전도성 질화물은 타이타늄(Ti)과 질소(N)를 함유하여 형성된 것을 특징으로 하는 질화물계 발광소자.
- 제1항에 있어서,상기 오믹컨택트층은 입사된 빛을 상기 p형 클래드층으로 반사시킬 수 있는 반사형 오믹컨택트층이고, 금(Au), 루세늄(Ru), 크롬(Cr), 로듐(Rh), 스칸디움(Sc), 아연(Zn), 마그네슘(Mg), 은(Ag), 알루미늄(Al) 또는 이들 중 적어도 하나를 포함하는 합금 또는 고용체 중에서 선택된 적어도 하나의 소재를 적용하여 적어도 한 층 이상으로 형성된 것을 특징으로 하는 질화물계 발광소자.
- 제6항에 있어서,상기 반사형 오믹컨택트층 위에 손상을 방지할 수 있는 집괴 방지층을 더 구비하고,상기 집괴방지층은 구리(Cu), 실리콘(Si), 저메늄(Ge), 아연(Zn), 마그네슘(Mg), 타이티늄(Ti), 텅스텐(W), 또는 리튬(Li)과 이들로 형성된 합금 중 적어도 하나 이상으로 형성된 것을 특징으로 하는 질화물계 발광소자.
- n형 클래드층과 p형 클래드층 사이에 활성층을 갖는 질화물계 발광소자의 제조방법에 있어서,가. 기판 위에 n형 클래드층, 활성층 및 p형 클래드층이 순차적으로 적층된 발광구조체의 상기 p형 클래드층 위에 격자셀층 형성용 물질을 증착하는 단계와;나. 상기 격자셀층이 다수의 입자형 셀로 상호 이격되게 분산 될 수 있도록 열처리하는 단계와;다. 상기 격자셀층 위에 오믹컨택트층을 형성하는 단계;를 포함하는 것을 특징으로 하는 질화물계 발광소자의 제조방법.
- 제8항에 있어서, 상기 가 단계 이전에 노출되게 형성된 n형 클래드층 위에 n형 전극층을 증착하되 어닐링은 생략하는 단계를 더 포함하고,상기 n형전극층은 상기 나 단계의 열처리과정을 통해 어닐링처리되게 하는 것을 특징으로 하는 질화물계 발광소자의 제조방법.
- 제8항에 있어서, 상기 나 단계에서 적용되는 가열온도는 상기 p형클래드층의 도판트가 활성화 될 수 있는 온도를 적용하는 것을 특징으로 하는 질화물계 발광소자의 제조방법.
- 제8항 또는 제10항에 있어서,상기 나단계는 300도 내지 900도에서 질소, 산소, 또는 진공 분위기에서 수행되는 것을 특징으로 하는 질화물계 발광소자의 제조방법.
- 제8항에 있어서,상기 가 단계는 상기 격자셀 형성용 물질을 1 나노미터 내지 50 나노미터의 두께로 증착하는 것을 특징으로 하는 질화물계 발광소자의 제조방법.
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- 2004-03-12 KR KR1020040017072A patent/KR100634503B1/ko active IP Right Grant
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2005
- 2005-03-11 JP JP2005069399A patent/JP2005260245A/ja active Pending
- 2005-03-11 US US11/077,536 patent/US7485897B2/en active Active
- 2005-03-14 CN CNB2005100685404A patent/CN100481536C/zh active Active
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2008
- 2008-11-21 US US12/275,484 patent/US20090124030A1/en not_active Abandoned
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101154848B1 (ko) * | 2005-06-18 | 2012-06-18 | 엘지전자 주식회사 | 갈륨나이트라이드계 광소자 및 그의 제조 방법 |
WO2007069871A1 (en) * | 2005-12-16 | 2007-06-21 | Samsung Electronics Co., Ltd. | Optical device and method of fabricating the same |
KR100794304B1 (ko) * | 2005-12-16 | 2008-01-11 | 삼성전자주식회사 | 광학 소자 및 그 제조 방법 |
US8487344B2 (en) | 2005-12-16 | 2013-07-16 | Samsung Display Co., Ltd. | Optical device and method of fabricating the same |
WO2007074969A1 (en) * | 2005-12-27 | 2007-07-05 | Samsung Electronics Co., Ltd. | Group-iii nitride-based light emitting device |
KR100794305B1 (ko) * | 2005-12-27 | 2008-01-11 | 삼성전자주식회사 | 광학 소자 및 그 제조 방법 |
KR100794306B1 (ko) * | 2005-12-27 | 2008-01-11 | 삼성전자주식회사 | 발광 소자 및 그 제조 방법 |
US7910935B2 (en) | 2005-12-27 | 2011-03-22 | Samsung Electronics Co., Ltd. | Group-III nitride-based light emitting device |
KR100770586B1 (ko) * | 2007-03-21 | 2007-10-26 | (주)에피플러스 | 발광 다이오드 및 그 형성방법 |
KR100954729B1 (ko) * | 2008-06-12 | 2010-04-23 | 주식회사 세미콘라이트 | InN 양자섬 캡핑층을 구비한 질화물계 발광소자 |
US9142724B2 (en) | 2012-12-28 | 2015-09-22 | Samsung Electronics Co., Ltd. | Nitride-based semiconductor light-emitting device |
Also Published As
Publication number | Publication date |
---|---|
US7485897B2 (en) | 2009-02-03 |
JP5502170B2 (ja) | 2014-05-28 |
JP2013065856A (ja) | 2013-04-11 |
CN1677703A (zh) | 2005-10-05 |
CN100481536C (zh) | 2009-04-22 |
JP2005260245A (ja) | 2005-09-22 |
US20090124030A1 (en) | 2009-05-14 |
KR100634503B1 (ko) | 2006-10-16 |
US20050199895A1 (en) | 2005-09-15 |
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