JP6814902B1 - 半導体発光素子および半導体発光素子の製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 111
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000002019 doping agent Substances 0.000 claims abstract description 46
- 239000000463 material Substances 0.000 claims description 67
- 238000000034 method Methods 0.000 claims description 9
- 229910002704 AlGaN Inorganic materials 0.000 claims 11
- 238000010586 diagram Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 336
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 65
- 239000000758 substrate Substances 0.000 description 22
- 229910002601 GaN Inorganic materials 0.000 description 17
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 17
- 230000007423 decrease Effects 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 230000014616 translation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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Abstract
Description
Claims (8)
- n型AlGaN系半導体材料から構成されるn型クラッド層と、
前記n型クラッド層上に設けられ、波長240nm以上320nm以下の深紫外光を発するようにAlGaN系半導体材料から構成される活性層と、
前記活性層上に設けられ、AlN比率が50%以上であるp型AlGaN系半導体材料またはp型AlN系半導体材料から構成されるp型クラッド層と、
前記p型クラッド層上に接触して設けられ、AlN比率が5%以下のp型AlGaN系半導体材料またはp型GaN系半導体材料から構成され、8×1018/cm3以上5×1019/cm3以下のp型ドーパント濃度を有し、500nmより大きい厚さを有する第1p型コンタクト層と、
前記第1p型コンタクト層上に接触して設けられ、AlN比率が5%以下のp型AlGaN系半導体材料またはp型GaN系半導体材料から構成され、8×1019/cm3以上4×1020/cm3以下のp型ドーパント濃度を有し、8nm以上28nm以下の厚さを有する第2p型コンタクト層と、
前記第2p型コンタクト層上に接触して設けられ、前記第2p型コンタクト層に対するコンタクト抵抗が1×10−2Ω・cm2以下であるp側電極と、を備えることを特徴とする半導体発光素子。 - 前記第2p型コンタクト層は、1×1020/cm3以上2×1020/cm3以下のp型ドーパント濃度を有することを特徴とする請求項1に記載の半導体発光素子。
- 前記第2p型コンタクト層は、11nm以上20nm以下の厚さを有することを特徴とする請求項1または2に記載の半導体発光素子。
- 前記第1p型コンタクト層の厚さは、700nm以上1000nm以下であることを特徴とする請求項1から3のいずれか一項に記載の半導体発光素子。
- 前記p型クラッド層は、AlN比率が60%以上であるp型AlGaN系半導体材料から構成されることを特徴とする請求項1から4のいずれか一項に記載の半導体発光素子。
- 前記第1p型コンタクト層および前記第2p型コンタクト層は、p型GaNから構成されることを特徴とする請求項1から5のいずれか一項に記載の半導体発光素子。
- n型AlGaN系半導体材料から構成されるn型半導体層上に、波長240nm以上320nm以下の深紫外光を発するようにAlGaN系半導体材料から構成される活性層を形成する工程と、
前記活性層上に、AlN比率が50%以上であるp型AlGaN系半導体材料またはp型AlN系半導体材料から構成されるp型クラッド層を形成する工程と、
前記p型クラッド層上に接触するように、AlN比率が5%以下のp型AlGaN系半導体材料またはp型GaN系半導体材料から構成され、8×1018/cm3以上5×1019/cm3以下のp型ドーパント濃度を有し、500nmより大きい厚さを有する第1p型コンタクト層を形成する工程と、
前記第1p型コンタクト層上に接触するように、AlN比率が5%以下のp型AlGaN系半導体材料またはp型GaN系半導体材料から構成され、8×1019/cm3以上4×1020/cm3以下のp型ドーパント濃度を有し、8nm以上28nm以下の厚さを有する第2p型コンタクト層を形成する工程と、
前記第2p型コンタクト層上に接触するように、前記第2p型コンタクト層に対するコンタクト抵抗が1×10−2Ω・cm2以下であるp側電極を形成する工程と、を備えることを特徴とする半導体発光素子の製造方法。 - 前記第2p型コンタクト層の成長レートは、前記第1p型コンタクト層の成長レートの20%以上60%以下であることを特徴とする請求項7に記載の半導体発光素子の製造方法。
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JP2020077634A JP6814902B1 (ja) | 2020-04-24 | 2020-04-24 | 半導体発光素子および半導体発光素子の製造方法 |
TW110113865A TWI776472B (zh) | 2020-04-24 | 2021-04-19 | 半導體發光元件以及半導體發光元件的製造方法 |
US17/235,648 US20210336087A1 (en) | 2020-04-24 | 2021-04-20 | Semiconductor light-emitting element and method of manufacturing semiconductor light-emitting element |
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JP5177638B2 (ja) * | 2004-07-12 | 2013-04-03 | 三星電子株式会社 | フリップチップ型窒化物系発光素子 |
JP5232969B2 (ja) * | 2006-03-23 | 2013-07-10 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体発光素子の製造方法 |
JP5888132B2 (ja) * | 2012-06-08 | 2016-03-16 | 豊田合成株式会社 | 発光装置の製造方法 |
JP2014052606A (ja) * | 2012-09-10 | 2014-03-20 | Sharp Corp | 蛍光体基板、発光デバイス、表示装置、及び照明装置 |
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WO2015151471A1 (ja) * | 2014-03-31 | 2015-10-08 | パナソニック株式会社 | 紫外線発光素子及びそれを用いた電気機器 |
JP6257446B2 (ja) * | 2014-05-22 | 2018-01-10 | 日本山村硝子株式会社 | 有機−無機ハイブリッドポリマーで封止した紫外発光ダイオードおよびその製造方法 |
JP5953447B1 (ja) * | 2015-02-05 | 2016-07-20 | Dowaエレクトロニクス株式会社 | Iii族窒化物半導体発光素子およびその製造方法 |
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