KR20050089147A - 알킬-수소 실록산 분해 방지용 첨가제 - Google Patents

알킬-수소 실록산 분해 방지용 첨가제 Download PDF

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Publication number
KR20050089147A
KR20050089147A KR1020057004778A KR20057004778A KR20050089147A KR 20050089147 A KR20050089147 A KR 20050089147A KR 1020057004778 A KR1020057004778 A KR 1020057004778A KR 20057004778 A KR20057004778 A KR 20057004778A KR 20050089147 A KR20050089147 A KR 20050089147A
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KR
South Korea
Prior art keywords
linear
methylphenyl
branched
formula
ethyl
Prior art date
Application number
KR1020057004778A
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English (en)
Korean (ko)
Inventor
다니엘 제이. 테프
그레고리 비. 스미스
존 엘. 카골라
팀 에스. 안드레이카
Original Assignee
후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
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Application filed by 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. filed Critical 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨.
Publication of KR20050089147A publication Critical patent/KR20050089147A/ko

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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/05—Alcohols; Metal alcoholates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4402—Reduction of impurities in the source gas
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/13—Phenols; Phenolates
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane
KR1020057004778A 2002-09-18 2003-09-18 알킬-수소 실록산 분해 방지용 첨가제 KR20050089147A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41165102P 2002-09-18 2002-09-18
US60/411,651 2002-09-18

Publications (1)

Publication Number Publication Date
KR20050089147A true KR20050089147A (ko) 2005-09-07

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Family Applications (1)

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KR1020057004778A KR20050089147A (ko) 2002-09-18 2003-09-18 알킬-수소 실록산 분해 방지용 첨가제

Country Status (6)

Country Link
US (3) US7129311B2 (US20040127070A1-20040701-C00018.png)
EP (1) EP1573086A4 (US20040127070A1-20040701-C00018.png)
JP (1) JP2006516302A (US20040127070A1-20040701-C00018.png)
KR (1) KR20050089147A (US20040127070A1-20040701-C00018.png)
TW (1) TWI302908B (US20040127070A1-20040701-C00018.png)
WO (1) WO2004027110A2 (US20040127070A1-20040701-C00018.png)

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KR20110031309A (ko) * 2008-07-08 2011-03-25 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 환형 알켄 유도체의 분해 방지용 첨가제
KR101127908B1 (ko) * 2004-03-16 2012-03-21 스미또모 가가꾸 가부시끼가이샤 유기규소계 화합물 및 그 제조방법

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US8513448B2 (en) 2005-01-31 2013-08-20 Tosoh Corporation Cyclic siloxane compound, a material for forming Si-containing film, and its use
EP2256123B1 (en) * 2005-01-31 2013-08-14 Tosoh Corporation Cyclic siloxane compound, a material for forming Si-containing film, and its use
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KR102353030B1 (ko) 2014-01-27 2022-01-19 코닝 인코포레이티드 얇은 시트와 캐리어의 제어된 결합을 위한 물품 및 방법
EP3129221A1 (en) 2014-04-09 2017-02-15 Corning Incorporated Device modified substrate article and methods for making
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KR102524620B1 (ko) 2015-06-26 2023-04-21 코닝 인코포레이티드 시트 및 캐리어를 포함하는 방법들 및 물품들
WO2017141796A1 (ja) * 2016-02-15 2017-08-24 国立研究開発法人産業技術総合研究所 シロキサン及びその製造方法
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KR102567948B1 (ko) * 2021-09-23 2023-08-21 (주)제이아이테크 페놀 계열의 수소-규소 결합의 안정성 개선을 위한 첨가제

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101127908B1 (ko) * 2004-03-16 2012-03-21 스미또모 가가꾸 가부시끼가이샤 유기규소계 화합물 및 그 제조방법
KR20110031309A (ko) * 2008-07-08 2011-03-25 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 환형 알켄 유도체의 분해 방지용 첨가제

Also Published As

Publication number Publication date
WO2004027110A3 (en) 2006-04-06
WO2004027110A2 (en) 2004-04-01
TWI302908B (en) 2008-11-11
US20060159861A1 (en) 2006-07-20
JP2006516302A (ja) 2006-06-29
EP1573086A2 (en) 2005-09-14
TW200404769A (en) 2004-04-01
US7129311B2 (en) 2006-10-31
US7531590B2 (en) 2009-05-12
US20060270787A1 (en) 2006-11-30
EP1573086A4 (en) 2012-10-03
US20040127070A1 (en) 2004-07-01

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