KR20050088159A - 웨이퍼 처리 장치 - Google Patents

웨이퍼 처리 장치 Download PDF

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Publication number
KR20050088159A
KR20050088159A KR1020057013158A KR20057013158A KR20050088159A KR 20050088159 A KR20050088159 A KR 20050088159A KR 1020057013158 A KR1020057013158 A KR 1020057013158A KR 20057013158 A KR20057013158 A KR 20057013158A KR 20050088159 A KR20050088159 A KR 20050088159A
Authority
KR
South Korea
Prior art keywords
coating layer
shaft
graphite
platform
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020057013158A
Other languages
English (en)
Korean (ko)
Inventor
존 토마스 매리너
티모시 제이 헤즐
더글라스 알랜 롱월스
제프리 레널츠
아지트 세인
앤드류 존 마세이
존 레이스트
토마스 이 드반
Original Assignee
제너럴 일렉트릭 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 제너럴 일렉트릭 캄파니 filed Critical 제너럴 일렉트릭 캄파니
Publication of KR20050088159A publication Critical patent/KR20050088159A/ko
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Resistance Heating (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020057013158A 2003-01-17 2004-01-16 웨이퍼 처리 장치 Withdrawn KR20050088159A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US44116503P 2003-01-17 2003-01-17
US60/441,165 2003-01-17
US44240903P 2003-01-24 2003-01-24
US60/442,409 2003-01-24

Publications (1)

Publication Number Publication Date
KR20050088159A true KR20050088159A (ko) 2005-09-01

Family

ID=32829769

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057013158A Withdrawn KR20050088159A (ko) 2003-01-17 2004-01-16 웨이퍼 처리 장치

Country Status (5)

Country Link
US (1) US7364624B2 (https=)
EP (1) EP1588404A2 (https=)
JP (1) JP2006517740A (https=)
KR (1) KR20050088159A (https=)
WO (1) WO2004068541A2 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
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KR101053788B1 (ko) * 2008-03-26 2011-08-03 (주)램피스 반도체 웨이퍼 히팅장치 및 이의 제조방법
KR101122719B1 (ko) * 2009-05-27 2012-03-23 (주)티티에스 기판 가열 장치 및 이의 제조 방법 그리고, 이를 포함하는 기판 처리 장치
KR101310521B1 (ko) * 2006-09-26 2013-09-23 제너럴 일렉트릭 캄파니 열 균일성을 강화시킨 가열 장치 및 이의 제조방법
KR20190090452A (ko) * 2018-01-25 2019-08-02 한국과학기술원 박막 코팅 방법 및 그에 따라 제조된 전자 소자
KR102725322B1 (ko) * 2024-03-05 2024-11-04 주식회사 미코세라믹스 세라믹 서셉터

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JP4590364B2 (ja) * 2005-03-16 2010-12-01 日本碍子株式会社 処理装置
JP4435742B2 (ja) 2005-08-09 2010-03-24 信越化学工業株式会社 加熱素子
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US9892941B2 (en) * 2005-12-01 2018-02-13 Applied Materials, Inc. Multi-zone resistive heater
KR101299495B1 (ko) * 2005-12-08 2013-08-29 신에쓰 가가꾸 고교 가부시끼가이샤 세라믹스 히터, 히터 급전 부품 및 세라믹스 히터의제조방법
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KR101329630B1 (ko) 2006-04-13 2013-11-14 신에쓰 가가꾸 고교 가부시끼가이샤 가열소자
JP4654153B2 (ja) 2006-04-13 2011-03-16 信越化学工業株式会社 加熱素子
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US7901509B2 (en) * 2006-09-19 2011-03-08 Momentive Performance Materials Inc. Heating apparatus with enhanced thermal uniformity and method for making thereof
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US8684256B2 (en) * 2011-11-30 2014-04-01 Component Re-Engineering Company, Inc. Method for hermetically joining plate and shaft devices including ceramic materials used in semiconductor processing
US8932690B2 (en) * 2011-11-30 2015-01-13 Component Re-Engineering Company, Inc. Plate and shaft device
CN107078086B (zh) * 2014-02-07 2021-01-26 恩特格里斯公司 静电夹具以及制造其之方法
US10154542B2 (en) 2015-10-19 2018-12-11 Watlow Electric Manufacturing Company Composite device with cylindrical anisotropic thermal conductivity
US9640514B1 (en) 2016-03-29 2017-05-02 Globalfoundries Inc. Wafer bonding using boron and nitrogen based bonding stack
US20180122679A1 (en) * 2016-10-28 2018-05-03 Applied Materials, Inc. Stress balanced electrostatic substrate carrier with contacts
CN106685375B (zh) * 2016-12-15 2023-07-18 合肥晶威特电子有限责任公司 一种smd石英晶体谐振器基座以及加工方法
KR102519544B1 (ko) 2017-12-07 2023-04-07 삼성전자주식회사 웨이퍼 로딩 장치 및 막 형성 장치
JP6702385B2 (ja) * 2018-09-27 2020-06-03 住友大阪セメント株式会社 静電チャック装置
JP6873178B2 (ja) * 2019-03-26 2021-05-19 日本碍子株式会社 半導体製造装置用部材、その製法及び成形型
JP7174159B2 (ja) * 2019-07-16 2022-11-17 日本碍子株式会社 シャフト付きセラミックヒータ
CN114175851B (zh) * 2019-07-16 2024-06-25 日本碍子株式会社 带轴的陶瓷加热器
US11665786B2 (en) * 2019-12-05 2023-05-30 Applied Materials, Inc. Solid state heater and method of manufacture
US20220076988A1 (en) * 2020-09-10 2022-03-10 Applied Materials, Inc. Back side design for flat silicon carbide susceptor
US11515195B2 (en) * 2020-10-26 2022-11-29 Applied Materials, Inc. Semiconductor chamber components with high-performance coating

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Publication number Priority date Publication date Assignee Title
KR101310521B1 (ko) * 2006-09-26 2013-09-23 제너럴 일렉트릭 캄파니 열 균일성을 강화시킨 가열 장치 및 이의 제조방법
KR101053788B1 (ko) * 2008-03-26 2011-08-03 (주)램피스 반도체 웨이퍼 히팅장치 및 이의 제조방법
KR101122719B1 (ko) * 2009-05-27 2012-03-23 (주)티티에스 기판 가열 장치 및 이의 제조 방법 그리고, 이를 포함하는 기판 처리 장치
KR20190090452A (ko) * 2018-01-25 2019-08-02 한국과학기술원 박막 코팅 방법 및 그에 따라 제조된 전자 소자
KR102725322B1 (ko) * 2024-03-05 2024-11-04 주식회사 미코세라믹스 세라믹 서셉터
US12604705B2 (en) 2024-03-05 2026-04-14 Mico Ceramics Ltd. Ceramic susceptor

Also Published As

Publication number Publication date
WO2004068541A3 (en) 2004-12-02
US20040173161A1 (en) 2004-09-09
JP2006517740A (ja) 2006-07-27
EP1588404A2 (en) 2005-10-26
WO2004068541A2 (en) 2004-08-12
US7364624B2 (en) 2008-04-29

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