KR20050052480A - 데칼 이송 마이크로 조직 - Google Patents
데칼 이송 마이크로 조직 Download PDFInfo
- Publication number
- KR20050052480A KR20050052480A KR1020057003410A KR20057003410A KR20050052480A KR 20050052480 A KR20050052480 A KR 20050052480A KR 1020057003410 A KR1020057003410 A KR 1020057003410A KR 20057003410 A KR20057003410 A KR 20057003410A KR 20050052480 A KR20050052480 A KR 20050052480A
- Authority
- KR
- South Korea
- Prior art keywords
- substrate
- silicon
- pattern
- containing elastomer
- elastomer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 124
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 123
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
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- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 5
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- FPGGTKZVZWFYPV-UHFFFAOYSA-M tetrabutylammonium fluoride Chemical compound [F-].CCCC[N+](CCCC)(CCCC)CCCC FPGGTKZVZWFYPV-UHFFFAOYSA-M 0.000 description 8
- 239000013536 elastomeric material Substances 0.000 description 7
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- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
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- 238000000845 micromoulding in capillary Methods 0.000 description 4
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- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
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- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 2
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- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
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- 241000252506 Characiformes Species 0.000 description 1
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- 241000408659 Darpa Species 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- 108010033040 Histones Proteins 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
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- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
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- 150000001408 amides Chemical class 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 235000019463 artificial additive Nutrition 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 239000012620 biological material Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
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- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical compound [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
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- PQPVPZTVJLXQAS-UHFFFAOYSA-N hydroxy-methyl-phenylsilicon Chemical compound C[Si](O)C1=CC=CC=C1 PQPVPZTVJLXQAS-UHFFFAOYSA-N 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
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- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
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- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
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- 229920003052 natural elastomer Polymers 0.000 description 1
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- 229920003986 novolac Polymers 0.000 description 1
- 102000039446 nucleic acids Human genes 0.000 description 1
- 108020004707 nucleic acids Proteins 0.000 description 1
- 150000007523 nucleic acids Chemical class 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
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- 125000004430 oxygen atom Chemical group O* 0.000 description 1
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- 238000005192 partition Methods 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
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- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920003225 polyurethane elastomer Polymers 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 102000004169 proteins and genes Human genes 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
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- 238000000926 separation method Methods 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/0046—Surface micromachining, i.e. structuring layers on the substrate using stamping, e.g. imprinting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/03—Processes for manufacturing substrate-free structures
- B81C2201/034—Moulding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24562—Interlaminar spaces
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24628—Nonplanar uniform thickness material
Landscapes
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Micromachines (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
- Laminated Bodies (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/230,882 US6805809B2 (en) | 2002-08-28 | 2002-08-28 | Decal transfer microfabrication |
| US10/230,882 | 2002-08-28 |
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| KR20050052480A true KR20050052480A (ko) | 2005-06-02 |
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|---|---|
| US (2) | US6805809B2 (https=) |
| EP (1) | EP1539638A2 (https=) |
| JP (1) | JP2005537141A (https=) |
| KR (1) | KR20050052480A (https=) |
| CN (2) | CN100413778C (https=) |
| AU (1) | AU2003260094A1 (https=) |
| CA (1) | CA2495978A1 (https=) |
| SG (1) | SG170619A1 (https=) |
| WO (1) | WO2004021084A2 (https=) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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Families Citing this family (55)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7951392B2 (en) * | 2002-08-16 | 2011-05-31 | Boston Scientific Scimed, Inc. | Microarray drug delivery coatings |
| US6805809B2 (en) * | 2002-08-28 | 2004-10-19 | Board Of Trustees Of University Of Illinois | Decal transfer microfabrication |
| US8222072B2 (en) * | 2002-12-20 | 2012-07-17 | The Trustees Of Princeton University | Methods of fabricating devices by low pressure cold welding |
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| ATE480601T1 (de) * | 2003-12-22 | 2010-09-15 | Dow Corning | Siliconzusammensetzungen und deren verwendung bei der gezielten ablösung oder übertragung von gedruckten oder geformten strukturen und übertragungsverfahren dafür |
| ATE490567T1 (de) | 2004-03-08 | 2010-12-15 | Univ Illinois | Mikrofluidische elektrochemische reaktoren |
| US7741003B2 (en) * | 2004-03-30 | 2010-06-22 | Hitachi Global Storage Technologies Netherlands B.V. | Photoresist transfer pads |
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| GB2437328A (en) * | 2006-04-10 | 2007-10-24 | Cambridge Display Tech Ltd | Electric devices and methods of manufacture |
| CN101126898B (zh) * | 2007-08-31 | 2011-03-16 | 中国科学院光电技术研究所 | 一种利用金属层缩小π位相偏移光刻特征尺寸的方法 |
| EP2252467A1 (en) * | 2008-02-06 | 2010-11-24 | Nano Terra Inc. | Stencils with removable backings for forming micron-sized features on surfaces and methods of making and using the same |
| US8764993B2 (en) * | 2008-04-03 | 2014-07-01 | General Electric Company | SiOC membranes and methods of making the same |
| US8361840B2 (en) * | 2008-09-24 | 2013-01-29 | Eastman Kodak Company | Thermal barrier layer for integrated circuit manufacture |
| US8034663B2 (en) * | 2008-09-24 | 2011-10-11 | Eastman Kodak Company | Low cost die release wafer |
| US7772042B2 (en) | 2008-09-24 | 2010-08-10 | Eastman Kodak Company | Solvent softening to allow die placement |
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| US8679888B2 (en) | 2008-09-24 | 2014-03-25 | The Board Of Trustees Of The University Of Illinois | Arrays of ultrathin silicon solar microcells |
| US20100072490A1 (en) * | 2008-09-24 | 2010-03-25 | Kerr Roger S | Low cost flexible display sheet |
| US8062507B2 (en) * | 2008-09-25 | 2011-11-22 | Uop Llc | Stripping process with multi-sloped baffles |
| US8097926B2 (en) | 2008-10-07 | 2012-01-17 | Mc10, Inc. | Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy |
| JP5646492B2 (ja) | 2008-10-07 | 2014-12-24 | エムシー１０ インコーポレイテッドＭｃ１０，Ｉｎｃ． | 伸縮可能な集積回路およびセンサアレイを有する装置 |
| US8886334B2 (en) | 2008-10-07 | 2014-11-11 | Mc10, Inc. | Systems, methods, and devices using stretchable or flexible electronics for medical applications |
| WO2010065071A2 (en) | 2008-11-25 | 2010-06-10 | Regents Of The University Of Minnesota | Replication of patterned thin-film structures for use in plasmonics and metamaterials |
| US7927904B2 (en) * | 2009-01-05 | 2011-04-19 | Dalsa Semiconductor Inc. | Method of making BIOMEMS devices |
| US8398868B2 (en) * | 2009-05-19 | 2013-03-19 | International Business Machines Corporation | Directed self-assembly of block copolymers using segmented prepatterns |
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| US9757050B2 (en) | 2011-08-05 | 2017-09-12 | Mc10, Inc. | Catheter balloon employing force sensing elements |
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| US9295842B2 (en) | 2012-07-05 | 2016-03-29 | Mc10, Inc. | Catheter or guidewire device including flow sensing and use thereof |
| CA2881826C (en) | 2012-08-17 | 2021-03-30 | Visual Physics, Llc | A process for transferring microstructures to a final substrate |
| US9171794B2 (en) | 2012-10-09 | 2015-10-27 | Mc10, Inc. | Embedding thin chips in polymer |
| US9711744B2 (en) | 2012-12-21 | 2017-07-18 | 3M Innovative Properties Company | Patterned structured transfer tape |
| JP6170378B2 (ja) * | 2013-08-29 | 2017-07-26 | 東京エレクトロン株式会社 | エッチング方法 |
| CN104555904A (zh) * | 2013-10-14 | 2015-04-29 | 北京大学 | 基于bcb转印工艺实现mems器件圆片级封装的方法 |
| FR3029433B1 (fr) * | 2014-12-04 | 2017-01-13 | Commissariat Energie Atomique | Procede de transfert d'au moins une partie d'un film composite sur une membrane souple en polymere |
| CN105241635B (zh) * | 2015-09-01 | 2018-06-26 | 中国科学院苏州生物医学工程技术研究所 | 用于测试分辨率的荧光纳米标准板的制备方法 |
| CN105731365B (zh) * | 2016-02-29 | 2017-05-24 | 天津大学 | 基于交联控制转移印刷的pdms弹性体微纳加工方法 |
| GB201613051D0 (en) * | 2016-07-28 | 2016-09-14 | Landa Labs (2012) Ltd | Applying an electrical conductor to a substrate |
| KR102890564B1 (ko) | 2019-01-29 | 2025-11-24 | 램 리써치 코포레이션 | 기판들의 환경에 민감한 표면들을 위한 희생적 보호 층 |
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| CN114375489A (zh) | 2019-09-04 | 2022-04-19 | 朗姆研究公司 | 刺激响应聚合物膜和制剂 |
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| WO2021099459A1 (en) * | 2019-11-21 | 2021-05-27 | Norsk Titanium As | Distortion mitigation in directed energy deposition |
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| US12600159B2 (en) * | 2022-02-25 | 2026-04-14 | Intel Corporation | Reusable composite stencil for spray processes |
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| CN115417371B (zh) * | 2022-09-14 | 2025-01-14 | 哈尔滨工业大学 | 一种空气油下都能实现表面粘附力调控的方法 |
Family Cites Families (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3682633A (en) * | 1967-01-06 | 1972-08-08 | Minnesota Mining & Mfg | Color proofing method |
| US3764248A (en) | 1971-09-03 | 1973-10-09 | Stewart Rubber Co | Transfer mold for reducing ram flash |
| JPS535255A (en) | 1976-07-05 | 1978-01-18 | Hitachi Ltd | Mold for molding resin |
| US4764244A (en) * | 1985-06-11 | 1988-08-16 | The Foxboro Company | Resonant sensor and method of making same |
| US5071597A (en) | 1989-06-02 | 1991-12-10 | American Bank Note Holographics, Inc. | Plastic molding of articles including a hologram or other microstructure |
| US5260123A (en) | 1991-06-28 | 1993-11-09 | Bridgestone Corporation | Block copolymers of polysiloxanes and copolymers of conjugated dienes and aromatic vinyl compounds, and multilayer structures containing same |
| DE69224937T2 (de) | 1991-07-01 | 1998-10-22 | Gen Electric | Polycarbonat-Polysiloxan-Blockcopolymere |
| DE4219667C2 (de) | 1992-06-16 | 1994-12-01 | Kernforschungsz Karlsruhe | Werkzeug und Verfahren zur Herstellung einer mikrostrukturierten Kunststoffschicht |
| US5932677A (en) | 1993-05-27 | 1999-08-03 | General Electric Company | Terpolymer having aromatic polyester, polysiloxane and polycarbonate segments |
| US5538674A (en) | 1993-11-19 | 1996-07-23 | Donnelly Corporation | Method for reproducing holograms, kinoforms, diffractive optical elements and microstructures |
| US5502144A (en) | 1994-07-15 | 1996-03-26 | University Of Cincinnati | Composition and method for preparing silicone elastomers |
| US6403710B1 (en) | 1994-08-29 | 2002-06-11 | The Dow Chemical Company | Block copolymer compositions containing substantially inert thermoelastic extenders |
| US5534609A (en) | 1995-02-03 | 1996-07-09 | Osi Specialties, Inc. | Polysiloxane compositions |
| US5670598A (en) | 1995-03-24 | 1997-09-23 | Minnesota Mining And Manufacturing Company | Diblock and triblock polydiorganosiloxane-polyurea block copolymers |
| US5618903A (en) | 1995-06-06 | 1997-04-08 | Shell Oil Company | Anionically polymerized block copolymers of ethylene and cyclic siloxane monomers |
| DE69630118T2 (de) | 1995-06-06 | 2004-07-08 | Kanegafuchi Kagaku Kogyo K.K. | Statistisches siloxan-copolymer, verfahren zu dessen herstellung und das copolymer enthaltende zusammensetzung |
| US5661092A (en) * | 1995-09-01 | 1997-08-26 | The University Of Connecticut | Ultra thin silicon oxide and metal oxide films and a method for the preparation thereof |
| US5637668A (en) | 1996-04-01 | 1997-06-10 | Dow Corning Corporation | Preparation of polyorganosiloxanes by interfacial polymerization |
| DE69701201T2 (de) | 1996-04-15 | 2000-06-21 | Dow Corning Asia, Ltd. | Copolymer aus Polypropylene und einem Organopolysiloxan und Verfahren zu seiner Herstellung |
| US5789487A (en) | 1996-07-10 | 1998-08-04 | Carnegie-Mellon University | Preparation of novel homo- and copolymers using atom transfer radical polymerization |
| EP0821018A3 (de) | 1996-07-22 | 1998-09-30 | PCD-Polymere Gesellschaft m.b.H. | Vernetzbare olefinische Polymere und Verfahren zu ihrer Herstellung |
| EP0857746A4 (en) | 1996-08-21 | 1999-11-24 | Kaneka Corp | PROCESS FOR PREPARING SILOXANE COPOLYMERS AND RESIN COMPOSITIONS CONTAINING SILOXANE COPOLYMERS PREPARED ACCORDING TO SAID PROCESS |
| JPH10135528A (ja) * | 1996-10-31 | 1998-05-22 | Matsushita Electric Ind Co Ltd | 電子部品用誘電体膜シート、その製造方法および誘電体素子 |
| US5741859A (en) | 1997-02-03 | 1998-04-21 | Dow Corning Corporation | Block copolymers of polyisobutylene and polydimethylsiloxane |
| US6013715A (en) | 1997-04-22 | 2000-01-11 | Dow Corning Corporation | Thermoplastic silicone elastomers |
| US6013711A (en) | 1997-06-18 | 2000-01-11 | Ck Witco Corporation | Hydrophilic polysiloxane compositions |
| US6007914A (en) | 1997-12-01 | 1999-12-28 | 3M Innovative Properties Company | Fibers of polydiorganosiloxane polyurea copolymers |
| US6033202A (en) | 1998-03-27 | 2000-03-07 | Lucent Technologies Inc. | Mold for non - photolithographic fabrication of microstructures |
| US6344521B1 (en) | 1998-05-20 | 2002-02-05 | Fmc Corporation | Protected functionalized diene and alkenyl substituted aromatic silicone triblock copolymers and processes for making the same |
| US6387597B1 (en) * | 1998-06-05 | 2002-05-14 | Creo Srl | Method for exposing features on non-planar resists |
| US6252253B1 (en) | 1998-06-10 | 2001-06-26 | Agere Systems Optoelectronics Guardian Corp. | Patterned light emitting diode devices |
| JP2000025224A (ja) * | 1998-07-08 | 2000-01-25 | Brother Ind Ltd | 液体吐出装置及び液体吐出装置製造方法 |
| US6153691A (en) | 1998-10-07 | 2000-11-28 | Dow Corning Corporation | Thermoplastic silicone vulcanizates prepared by condensation cure |
| US6235863B1 (en) | 1998-12-03 | 2001-05-22 | Shell Oil Company | Production of saturated siloxane polymers from aromatic monomers |
| US6090902A (en) | 1998-12-21 | 2000-07-18 | Dow Corning Corporation | Organopolysiloxane-modified graft copolymers |
| US7144616B1 (en) * | 1999-06-28 | 2006-12-05 | California Institute Of Technology | Microfabricated elastomeric valve and pump systems |
| US6664126B1 (en) | 1999-09-03 | 2003-12-16 | University Of Maryland, College Park | Process for fabrication of 3-dimensional micromechanisms |
| US6339131B1 (en) | 1999-12-06 | 2002-01-15 | General Electric Company | Synthesis of poly (arylene ether)-poly(organosiloxane) copolymers |
| US6363183B1 (en) | 2000-01-04 | 2002-03-26 | Seungug Koh | Reconfigurable and scalable intergrated optic waveguide add/drop multiplexing element using micro-opto-electro-mechanical systems and methods of fabricating thereof |
| US6686184B1 (en) * | 2000-05-25 | 2004-02-03 | President And Fellows Of Harvard College | Patterning of surfaces utilizing microfluidic stamps including three-dimensionally arrayed channel networks |
| US6645432B1 (en) * | 2000-05-25 | 2003-11-11 | President & Fellows Of Harvard College | Microfluidic systems including three-dimensionally arrayed channel networks |
| US6362288B1 (en) | 2000-07-26 | 2002-03-26 | Dow Corning Corporation | Thermoplastic silicone elastomers from compatibilized polyamide resins |
| FR2814064B1 (fr) | 2000-09-20 | 2005-06-17 | Oreal | Composition de lavage comprenant des particules d'oxyde d'aluminium, au moins un agent conditionneur et au moins un tensioactif detergent |
| EP1331997B1 (en) * | 2000-11-06 | 2004-06-16 | Nanostream, Inc. | Microfluidic flow control devices |
| US6663820B2 (en) * | 2001-03-14 | 2003-12-16 | The Procter & Gamble Company | Method of manufacturing microneedle structures using soft lithography and photolithography |
| KR100442413B1 (ko) * | 2001-08-04 | 2004-07-30 | 학교법인 포항공과대학교 | 표면에 금속 미세 패턴을 가진 플라스틱 기판의 제조방법 |
| US6805809B2 (en) * | 2002-08-28 | 2004-10-19 | Board Of Trustees Of University Of Illinois | Decal transfer microfabrication |
| US7662545B2 (en) * | 2004-10-14 | 2010-02-16 | The Board Of Trustees Of The University Of Illinois | Decal transfer lithography |
-
2002
- 2002-08-28 US US10/230,882 patent/US6805809B2/en not_active Expired - Lifetime
-
2003
- 2003-08-28 SG SG200802867-2A patent/SG170619A1/en unknown
- 2003-08-28 AU AU2003260094A patent/AU2003260094A1/en not_active Abandoned
- 2003-08-28 JP JP2004531513A patent/JP2005537141A/ja active Pending
- 2003-08-28 CA CA002495978A patent/CA2495978A1/en not_active Abandoned
- 2003-08-28 CN CNB038234440A patent/CN100413778C/zh not_active Expired - Fee Related
- 2003-08-28 EP EP03791812A patent/EP1539638A2/en not_active Withdrawn
- 2003-08-28 CN CNA2008101356893A patent/CN101327904A/zh active Pending
- 2003-08-28 WO PCT/US2003/026751 patent/WO2004021084A2/en not_active Ceased
- 2003-08-28 KR KR1020057003410A patent/KR20050052480A/ko not_active Abandoned
-
2004
- 2004-08-04 US US10/911,049 patent/US20050199584A1/en not_active Abandoned
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8557619B2 (en) | 2009-08-07 | 2013-10-15 | Siltron Inc. | Light emitting diode display and method of manufacturing the same |
| US8980673B2 (en) | 2009-09-17 | 2015-03-17 | Lg Siltron Incorporated | Solar cell and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| US6805809B2 (en) | 2004-10-19 |
| SG170619A1 (en) | 2011-05-30 |
| JP2005537141A (ja) | 2005-12-08 |
| CA2495978A1 (en) | 2004-03-11 |
| WO2004021084A3 (en) | 2004-06-17 |
| AU2003260094A1 (en) | 2004-03-19 |
| CN101327904A (zh) | 2008-12-24 |
| US20050199584A1 (en) | 2005-09-15 |
| CN1684902A (zh) | 2005-10-19 |
| AU2003260094A8 (en) | 2004-03-19 |
| EP1539638A2 (en) | 2005-06-15 |
| WO2004021084A2 (en) | 2004-03-11 |
| US20040040653A1 (en) | 2004-03-04 |
| CN100413778C (zh) | 2008-08-27 |
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