KR20050037797A - 반도체 소자의 금속배선 형성방법 - Google Patents
반도체 소자의 금속배선 형성방법 Download PDFInfo
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- KR20050037797A KR20050037797A KR1020030073067A KR20030073067A KR20050037797A KR 20050037797 A KR20050037797 A KR 20050037797A KR 1020030073067 A KR1020030073067 A KR 1020030073067A KR 20030073067 A KR20030073067 A KR 20030073067A KR 20050037797 A KR20050037797 A KR 20050037797A
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- film
- contact hole
- forming
- metal
- wiring
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 84
- 239000002184 metal Substances 0.000 title claims abstract description 84
- 238000000034 method Methods 0.000 title claims abstract description 61
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 239000010410 layer Substances 0.000 claims abstract description 61
- 238000000151 deposition Methods 0.000 claims abstract description 34
- 230000004888 barrier function Effects 0.000 claims abstract description 33
- 230000008021 deposition Effects 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 239000011229 interlayer Substances 0.000 claims abstract description 20
- 238000001465 metallisation Methods 0.000 claims abstract description 20
- 229910004469 SiHx Inorganic materials 0.000 claims abstract description 19
- 230000002265 prevention Effects 0.000 claims abstract description 19
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 31
- 229910052721 tungsten Inorganic materials 0.000 claims description 31
- 239000010937 tungsten Substances 0.000 claims description 31
- 239000010949 copper Substances 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 238000009832 plasma treatment Methods 0.000 claims description 9
- 230000001131 transforming effect Effects 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 117
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- 239000010936 titanium Substances 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 238000006722 reduction reaction Methods 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000011066 ex-situ storage Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- TUTOKIOKAWTABR-UHFFFAOYSA-N dimethylalumane Chemical compound C[AlH]C TUTOKIOKAWTABR-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000013212 metal-organic material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000012421 spiking Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
- H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
- H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (13)
- 반도체 기판 상에 기판의 일부를 노출시키는 콘택홀을 구비한 층간절연막을 형성하는 단계;콘택홀 저부 및 상부 표면에 장벽금속막을 형성하는 단계;상기 콘택홀을 포함하는 기판 표면에 비정질 시드층을 형성하는 단계;상기 콘택홀 상부의 시드층을 금속증착 방지막으로 변형시키는 단계;상기 시드층을 이용하여 선택적 증착에 의해 상기 콘택홀 저부 및 측부에 밀착층을 형성하는 단계; 및상기 콘택홀 내부에 선택적 증착에 의해 금속 플러그를 형성하는 단계를 포함하는 반도체 소자의 금속배선 형성방법.
- 제 1 항에 있어서,상기 시드층은 SiHx막인 것을 특징으로 하는 반도체 소자의 금속배선 형성방법.
- 제 2 항에 있어서,상기 SiHx막은 SiH4 개스 처리에 의해 10㎚ 이하의 두께로 형성하는 것을 특징으로 하는 반도체 소자의 금속배선 형성방법.
- 제 1 항에 있어서,상기 금속증착 방지막은 NH3 또는 O2 플라즈마 처리에 의해 형성하는 것을 특징으로 하는 반도체 소자의 금속배선 형성방법.
- 제 1 항에 있어서,상기 플러그는 텅스텐막으로 이루어진 것을 특징으로 하는 반도체 소자의 금속배선 형성방법.
- 제 1 항에 있어서,상기 플러그는 알루미늄막으로 이루어진 것을 특징으로 하는 반도체 소자의 금속배선 형성방법.
- 제 6 항에 있어서,상기 밀착층을 형성한 후 상기 금속 플러그를 형성하기 전에,상기 밀착층을 리모트 NH3 또는 N2 플라즈마 처리하는 것을 특징으로 하는 반도체 소자의 금속배선 형성방법.
- 반도체 기판 상에 기판의 일부를 노출시키는 배선 형상의 콘택홀을 구비한 층간절연막을 형성하는 단계;콘택홀 저부 및 상부 표면에 제 1 장벽금속막을 형성하는 단계;상기 콘택홀을 포함하는 기판 표면에 비정질 시드층을 형성하는 단계;상기 콘택홀 상부의 시드층을 금속증착 방지막으로 변형시키는 단계;상기 시드층을 이용하여 상기 콘택홀 저부 및 측부에 제 2 장벽금속막을 형성하는 단계; 및상기 콘택홀 내부에 선택적 증착에 의해 배선을 형성하는 단계를 포함하는 반도체 소자의 금속배선 형성방법.
- 제 8 항에 있어서,상기 시드층은 SiHx막인 것을 특징으로 하는 반도체 소자의 금속배선 형성방법.
- 제 9 항에 있어서,상기 SiHx막은 SiH4 개스 처리에 의해 10㎚ 이하의 두께로 형성하는 것을 특징으로 하는 반도체 소자의 금속배선 형성방법.
- 제 8 항에 있어서,상기 금속증착 방지막은 NH3 또는 O2 플라즈마 처리에 의해 형성하는 것을 특징으로 하는 반도체 소자의 금속배선 형성방법.
- 제 8 항에 있어서,상기 제 2 장벽금속막의 형성은 상기 시드층을 이용하여 상기 콘택홀 저부 및 측부에 금속막을 증착한 후 리모트 NH3 플라즈마 처리하는 것을 이루어진 것을 특징으로 하는 반도체 소자의 금속배선 형성방법.
- 제 8 항에 있어서,상기 배선은 구리 또는 알루미늄으로 이루어진 것을 특징으로 하는 반도체 소자의 금속배선 형성방법.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030073067A KR100599434B1 (ko) | 2003-10-20 | 2003-10-20 | 반도체 소자의 금속배선 형성방법 |
US10/878,288 US7135403B2 (en) | 2003-10-20 | 2004-06-29 | Method for forming metal interconnection line in semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030073067A KR100599434B1 (ko) | 2003-10-20 | 2003-10-20 | 반도체 소자의 금속배선 형성방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050037797A true KR20050037797A (ko) | 2005-04-25 |
KR100599434B1 KR100599434B1 (ko) | 2006-07-14 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020030073067A KR100599434B1 (ko) | 2003-10-20 | 2003-10-20 | 반도체 소자의 금속배선 형성방법 |
Country Status (2)
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US (1) | US7135403B2 (ko) |
KR (1) | KR100599434B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100744247B1 (ko) * | 2005-12-28 | 2007-07-30 | 동부일렉트로닉스 주식회사 | 구리 배선 형성 방법 |
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