KR20050001780A - 액정표시장치 제조 방법 및 배선 구조 - Google Patents
액정표시장치 제조 방법 및 배선 구조 Download PDFInfo
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- KR20050001780A KR20050001780A KR1020030042074A KR20030042074A KR20050001780A KR 20050001780 A KR20050001780 A KR 20050001780A KR 1020030042074 A KR1020030042074 A KR 1020030042074A KR 20030042074 A KR20030042074 A KR 20030042074A KR 20050001780 A KR20050001780 A KR 20050001780A
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- Prior art keywords
- alloy
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- liquid crystal
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 85
- 229910052751 metal Inorganic materials 0.000 claims abstract description 84
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 62
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000010408 film Substances 0.000 claims abstract description 22
- 239000010409 thin film Substances 0.000 claims abstract description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 20
- 238000005530 etching Methods 0.000 claims abstract description 19
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 13
- 239000000956 alloy Substances 0.000 claims abstract description 13
- 239000011521 glass Substances 0.000 claims abstract description 11
- 238000002161 passivation Methods 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 3
- 239000010703 silicon Substances 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims description 45
- 230000008021 deposition Effects 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 238000005137 deposition process Methods 0.000 claims description 6
- 238000005275 alloying Methods 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 abstract 1
- 239000011651 chromium Substances 0.000 description 19
- 229910052750 molybdenum Inorganic materials 0.000 description 15
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 11
- 229910052804 chromium Inorganic materials 0.000 description 11
- 239000011733 molybdenum Substances 0.000 description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 229910018565 CuAl Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78663—Amorphous silicon transistors
- H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims (8)
- 투명성 유리 기판 상에 Al계 합금을 증착하고, Cu 금속을 증착하는 단계;상기 Cu 금속막이 증착된 기판 상에 포토레지스트를 도포하고, 마스크를 사용하여 노광 및 식각하여 게이트 배선을 형성하는 단계;상기 게이트 배선이 형성된 기판 상에 게이트 절연막, 비정질 실리콘, 도핑된 실리콘을 차례로 증착하고 식각하여 반도체 층을 형성하는 단계;상기 반도체 층이 형성된 기판 상에 Al 합금을 증착하고, Cu 금속을 증착하고, 노광 및 식각 공정을 진행하여 소오스/드레인 전극 및 데이터 버스 라인을 형성하는 단계;상기 소오스/드레인 전극과 데이터 버스 라인이 형성된 기판 상에 보호막을 도포하여 콘택홀 및 패드 오픈을 형성하는 단계; 및상기 보호막 상에 ITO 박막을 증착하고 식각하여 화소 전극을 형성하는 단계;를 포함하는 것을 특징으로 하는 액정표시장치 제조방법.
- 제 1 항에 있어서, 상기 Al계 합금은, Al 또는 Al에 도전성 금속을 합금한 금속인 것을 특징으로 하는 액정표시장치 제조방법.
- 제 1 항에 있어서, 상기 Al 합금 증착과 Cu 증착 공정은 챔버 내에서 연속해서 증착하는 것을 특징으로 하는 액정표시장치 제조방법.
- 제 1 항에 있어서, 상기 Al 합금 증착과 Cu 증착 공정은 Al 합금 증착 후, 대기에 노출 시켜 다시 Cu를 비연속적으로 증착하는 것을 특징으로 하는 액정표시장치 제조방법.
- 제 1 항에 있어서, 상기 Al 합금의 두께보다 Cu 두께를 두껍게 형성하는 것을 특징으로 하는 액정표시장치 제조방법.
- 액정표시장치에 있어서,어레이 기판 상에 배치되는 게이트 배선과, 상기 게이트 배선에 오버랩 되도록 배치되는 데이터 배선, 액정표시장치의 단위 화소 영역에 배치되어 있는 박막 트랜지스터의 소오스/드레인 전극은 Al 합금층과 Cu 층의 이중층을 갖는 것을 특징으로 하는 액정표시장치 배선 구조.
- 제 6 항에 있어서, 상기 Al 합금층은 Al 또는 Al과 도전성 금속의 합금인 것을 특징으로 하는 액정표시장치 배선 구조.
- 제 6 항에 있어서, 상기 Cu 층은 Al 합금 층보다 두꺼운 두께를 갖는 것을 특징으로 하는 액정표시장치 배선 구조.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020030042074A KR100905662B1 (ko) | 2003-06-26 | 2003-06-26 | 액정표시장치 제조 방법 및 배선 구조 |
US10/870,212 US7177003B2 (en) | 2003-06-26 | 2004-06-17 | LCD with gate and data lines formed of copper and an aluminum under-layer |
Applications Claiming Priority (1)
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KR1020030042074A KR100905662B1 (ko) | 2003-06-26 | 2003-06-26 | 액정표시장치 제조 방법 및 배선 구조 |
Publications (2)
Publication Number | Publication Date |
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KR20050001780A true KR20050001780A (ko) | 2005-01-07 |
KR100905662B1 KR100905662B1 (ko) | 2009-06-30 |
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KR1020030042074A KR100905662B1 (ko) | 2003-06-26 | 2003-06-26 | 액정표시장치 제조 방법 및 배선 구조 |
Country Status (2)
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US (1) | US7177003B2 (ko) |
KR (1) | KR100905662B1 (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100905662B1 (ko) * | 2003-06-26 | 2009-06-30 | 엘지디스플레이 주식회사 | 액정표시장치 제조 방법 및 배선 구조 |
KR101499237B1 (ko) * | 2007-12-24 | 2015-03-06 | 삼성디스플레이 주식회사 | 표시판 및 그 제조 방법 |
WO2010058541A1 (ja) * | 2008-11-18 | 2010-05-27 | パナソニック株式会社 | フレキシブル半導体装置およびその製造方法 |
US8270178B2 (en) * | 2010-03-22 | 2012-09-18 | Au Optronics Corporation | Active device array substrate |
EP2426720A1 (en) * | 2010-09-03 | 2012-03-07 | Applied Materials, Inc. | Staggered thin film transistor and method of forming the same |
KR102094841B1 (ko) | 2013-05-16 | 2020-03-31 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
CN107946322A (zh) * | 2017-12-15 | 2018-04-20 | 京东方科技集团股份有限公司 | 阵列基板及其制造方法、显示装置 |
CN110737308B (zh) * | 2019-10-16 | 2021-10-15 | Oppo广东移动通信有限公司 | 电子设备的屏幕组件及电子设备 |
CN114156394A (zh) * | 2020-09-07 | 2022-03-08 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示面板和背光模组 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3132310B2 (ja) * | 1994-11-18 | 2001-02-05 | 株式会社日立製作所 | アクティブマトリクス型液晶表示装置 |
JPH10133216A (ja) * | 1996-11-01 | 1998-05-22 | Hitachi Ltd | アクティブマトリクス型液晶表示装置 |
KR100464632B1 (ko) * | 1996-03-27 | 2005-02-28 | 하이닉스 세미컨덕터 아메리카 인코포레이티드 | 능동매트릭스디스플레이및그제조방법 |
JP3774855B2 (ja) * | 1997-04-25 | 2006-05-17 | 大林精工株式会社 | 液晶表示装置と製造方法. |
JP2001281698A (ja) * | 2000-03-30 | 2001-10-10 | Advanced Display Inc | 電気光学素子の製法 |
KR100806897B1 (ko) * | 2001-08-07 | 2008-02-22 | 삼성전자주식회사 | 액정 표시 장치 |
KR100905662B1 (ko) * | 2003-06-26 | 2009-06-30 | 엘지디스플레이 주식회사 | 액정표시장치 제조 방법 및 배선 구조 |
KR100971950B1 (ko) * | 2003-06-30 | 2010-07-23 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이기판과 제조방법 |
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2003
- 2003-06-26 KR KR1020030042074A patent/KR100905662B1/ko active IP Right Grant
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- 2004-06-17 US US10/870,212 patent/US7177003B2/en not_active Expired - Fee Related
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Publication number | Publication date |
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US7177003B2 (en) | 2007-02-13 |
KR100905662B1 (ko) | 2009-06-30 |
US20050007511A1 (en) | 2005-01-13 |
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