KR20040089571A - Led 램프 및 이를 제조하는 방법 - Google Patents
Led 램프 및 이를 제조하는 방법 Download PDFInfo
- Publication number
- KR20040089571A KR20040089571A KR1020040025184A KR20040025184A KR20040089571A KR 20040089571 A KR20040089571 A KR 20040089571A KR 1020040025184 A KR1020040025184 A KR 1020040025184A KR 20040025184 A KR20040025184 A KR 20040025184A KR 20040089571 A KR20040089571 A KR 20040089571A
- Authority
- KR
- South Korea
- Prior art keywords
- light emitting
- resist
- frame member
- metal pattern
- substrate
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000000034 method Methods 0.000 title claims description 11
- 229920005989 resin Polymers 0.000 claims abstract description 74
- 239000011347 resin Substances 0.000 claims abstract description 74
- 239000002184 metal Substances 0.000 claims abstract description 66
- 229910052751 metal Inorganic materials 0.000 claims abstract description 66
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 63
- 239000010949 copper Substances 0.000 claims abstract description 55
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 52
- 229910052802 copper Inorganic materials 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000010931 gold Substances 0.000 claims abstract description 38
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052737 gold Inorganic materials 0.000 claims abstract description 35
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 30
- 239000000853 adhesive Substances 0.000 claims abstract description 26
- 230000001070 adhesive effect Effects 0.000 claims abstract description 26
- 230000008646 thermal stress Effects 0.000 abstract description 11
- 230000005540 biological transmission Effects 0.000 abstract 1
- 230000032798 delamination Effects 0.000 abstract 1
- 235000019592 roughness Nutrition 0.000 abstract 1
- 239000003822 epoxy resin Substances 0.000 description 9
- 229920000647 polyepoxide Polymers 0.000 description 9
- 238000007789 sealing Methods 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 6
- 230000035882 stress Effects 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000001029 thermal curing Methods 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 1
- 239000004840 adhesive resin Substances 0.000 description 1
- 229920006223 adhesive resin Polymers 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (5)
- LED 램프이며,순서적으로 연속하여 적층되는 구리(Cu), 니켈(Ni) 및 금(Au) 막을 포함하는 전기 도전부로서 형성된 금속 패턴으로 도포된 기판과,접착제를 통해 상기 기판 상에 고정된 수지 프레임 부재와,상기 금속 패턴에 전기 접속되도록 상기 기판 상의 상기 수지 프레임 부재의 프레임 내로 고정된 발광 소자와,상기 기판과 상기 수지 프레임 부재 사이에 적어도 부분적으로 놓여지는 구조를 형성하도록 상기 금속 패턴의 구리 막의 니켈이 없거나 또는 금이 없는 표면 상에 접착된 레지스트와,상기 발광 소자를 밀봉하기 위해 상기 수지 프레임 부재의 상기 프레임 내에 충진된 광 투과성 수지를 포함하는 LED 램프.
- 제1항에 있어서, 상기 수지 프레임 부재와 상기 기판 사이에 보유된 상기 레지스트의 내측 에지는 상기 수지 프레임 부재의 관통 구멍의 에지로부터 볼 수 있는 LED 램프.
- 제1항에 있어서, 상기 레지스트는 링 형상인 LED 램프.
- LED 램프를 제조하는 방법이며,발광 소자에 전기 접속된 금속 패턴의 최하단층으로서 제공되는 구리 막으로 기판을 도포하는 단계와,상기 발광 소자가 장착될 위치의 주위를 레지스트가 둘러싸도록 구리 막 상에 상기 레지스트를 접착시키는 단계와,상기 구리 막 상에 니켈 막을 형성하고 추가적으로 상기 니켈 막 상에 금 막을 형성하여 상기 금속 패턴을 완성시키는 단계와,상기 발광 소자가 장착될 위치의 주위를 수지 프레임 부재가 둘러쌀 때 상기 레지스트가 기판과 수지 프레임 부재 사이에 적어도 부분적으로 놓여지도록 접착제의 층을 통해 기판 상으로 수지 프레임 부재를 접착시키는 단계와,상기 발광 소자를 상기 금속 패턴에 전기 접속할 때 상기 금속 패턴 상에 상기 발광 소자를 장착하는 단계와,상기 발광 소자를 광 투과성 수지로 밀봉하기 위해 상기 수지 프레임 부재의 프레임 내에 광 투과성 수지를 충진시키는 단계를 포함하는 LED 램프 제조 방법.
- 제4항에 있어서, 상기 레지스트는 링 형상인 LED 램프 제조 방법.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003109279A JP4514413B2 (ja) | 2003-04-14 | 2003-04-14 | Ledランプ及びその製造方法 |
JPJP-P-2003-00109279 | 2003-04-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040089571A true KR20040089571A (ko) | 2004-10-21 |
KR100634928B1 KR100634928B1 (ko) | 2006-10-17 |
Family
ID=33470490
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040025184A KR100634928B1 (ko) | 2003-04-14 | 2004-04-13 | Led 램프 및 이를 제조하는 방법 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7332862B2 (ko) |
JP (1) | JP4514413B2 (ko) |
KR (1) | KR100634928B1 (ko) |
CN (1) | CN1327536C (ko) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI294699B (en) * | 2006-01-27 | 2008-03-11 | Epistar Corp | Light emitting device and method of forming the same |
JP4671745B2 (ja) * | 2005-04-18 | 2011-04-20 | 京セラ株式会社 | 発光装置およびそれを用いた照明装置 |
JP4681343B2 (ja) * | 2005-04-28 | 2011-05-11 | シチズン電子株式会社 | 発光ダイオードの製造方法 |
KR101093324B1 (ko) * | 2005-05-30 | 2011-12-14 | 엘지이노텍 주식회사 | 발광 다이오드를 구비한 백라이트 유닛 |
US8044412B2 (en) | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
TWI303115B (en) * | 2006-04-13 | 2008-11-11 | Epistar Corp | Semiconductor light emitting device |
CN102560683B (zh) * | 2010-12-29 | 2015-09-30 | 有研半导体材料有限公司 | 一种防止硅片在热处理过程中崩边的方法及石英舟 |
JP6553143B2 (ja) * | 2012-05-09 | 2019-07-31 | ローム株式会社 | 半導体発光装置 |
US9590155B2 (en) * | 2012-06-06 | 2017-03-07 | Cree, Inc. | Light emitting devices and substrates with improved plating |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4242842C2 (de) * | 1992-02-14 | 1999-11-04 | Sharp Kk | Lichtemittierendes Bauelement zur Oberflächenmontage und Verfahren zu dessen Herstellung |
US5612512A (en) * | 1992-11-11 | 1997-03-18 | Murata Manufacturing Co., Ltd. | High frequency electronic component having base substrate formed of bismaleimide-triazine resin and resistant film formed on base substrate |
JP3541491B2 (ja) * | 1994-06-22 | 2004-07-14 | セイコーエプソン株式会社 | 電子部品 |
JP3065509B2 (ja) | 1995-06-02 | 2000-07-17 | スタンレー電気株式会社 | 表面実装型発光ダイオード |
US6274890B1 (en) * | 1997-01-15 | 2001-08-14 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and its manufacturing method |
JP2976917B2 (ja) * | 1997-03-31 | 1999-11-10 | 日本電気株式会社 | 半導体装置 |
JP3871820B2 (ja) * | 1998-10-23 | 2007-01-24 | ローム株式会社 | 半導体発光素子 |
JP2000301762A (ja) * | 1999-04-23 | 2000-10-31 | Oki Data Corp | Ledプリントヘッド |
CN1173416C (zh) * | 2000-01-10 | 2004-10-27 | 詹宗文 | 圆弧平底凹杯之发光二极管的制作方法 |
JP2001196641A (ja) * | 2000-01-14 | 2001-07-19 | Matsushita Electric Ind Co Ltd | 表面実装型の半導体装置 |
US20020024299A1 (en) * | 2000-08-09 | 2002-02-28 | Tadahiro Okazaki | Chip-type light-emitting device |
-
2003
- 2003-04-14 JP JP2003109279A patent/JP4514413B2/ja not_active Expired - Fee Related
-
2004
- 2004-04-13 US US10/822,866 patent/US7332862B2/en not_active Expired - Fee Related
- 2004-04-13 KR KR1020040025184A patent/KR100634928B1/ko active IP Right Grant
- 2004-04-14 CN CNB2004100329068A patent/CN1327536C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7332862B2 (en) | 2008-02-19 |
CN1327536C (zh) | 2007-07-18 |
CN1538536A (zh) | 2004-10-20 |
US20040251828A1 (en) | 2004-12-16 |
JP2004319634A (ja) | 2004-11-11 |
JP4514413B2 (ja) | 2010-07-28 |
KR100634928B1 (ko) | 2006-10-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI389357B (zh) | 具有防水功能的表面黏著型發光二極體元件、具有防水功能的發光二極體模組以及其製作方法 | |
US10454003B2 (en) | Light emitting device and manufacturing method thereof | |
US8334585B2 (en) | LED package and fabrication method thereof | |
CN1871710B (zh) | 采用电表面安装的发光晶片封装 | |
JP5277085B2 (ja) | 発光装置及び発光装置の製造方法 | |
KR100355473B1 (ko) | 반도체발광장치및그제조방법 | |
TWI528508B (zh) | 高功率發光二極體陶瓷封裝之製造方法 | |
JP4754850B2 (ja) | Led実装用モジュールの製造方法及びledモジュールの製造方法 | |
JP2006294804A (ja) | 発光ダイオード | |
WO2013168802A1 (ja) | Ledモジュール | |
JP2010508652A (ja) | 照明デバイスパッケージ | |
JP5207807B2 (ja) | チップ部品型led | |
JP2003218398A (ja) | 表面実装型発光ダイオード及びその製造方法 | |
JP2012074753A (ja) | 発光ダイオードパッケージ | |
JP3991624B2 (ja) | 表面実装型発光装置及びその製造方法 | |
CN1909028A (zh) | Led二维发光模块及led显示屏 | |
JP6065586B2 (ja) | 発光装置及びその製造方法 | |
KR100634928B1 (ko) | Led 램프 및 이를 제조하는 방법 | |
JP2004207660A (ja) | 発光ダイオード | |
JP2008130735A (ja) | 発光装置の製造方法 | |
TWI482320B (zh) | 具有藉由單一囊封材料圍繞的反射體杯狀物之引線框架晶片載體封裝 | |
JP2004193357A (ja) | Led光源、led照明装置、およびled表示装置 | |
JP5350947B2 (ja) | 発光ダイオード | |
CN111987086A (zh) | 一种高对比度的led显示模组和封装方法 | |
KR101090991B1 (ko) | 엘이디 패키지 및 이의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20120924 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20130924 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20141001 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20150918 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20160921 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20170919 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20180918 Year of fee payment: 13 |