KR20040077746A - 열처리 장치 및 열처리 방법 - Google Patents
열처리 장치 및 열처리 방법 Download PDFInfo
- Publication number
- KR20040077746A KR20040077746A KR10-2004-7011221A KR20047011221A KR20040077746A KR 20040077746 A KR20040077746 A KR 20040077746A KR 20047011221 A KR20047011221 A KR 20047011221A KR 20040077746 A KR20040077746 A KR 20040077746A
- Authority
- KR
- South Korea
- Prior art keywords
- susceptor
- heat treatment
- ring
- preheating ring
- center
- Prior art date
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 120
- 238000000034 method Methods 0.000 title claims description 17
- 239000000758 substrate Substances 0.000 claims description 23
- 239000010409 thin film Substances 0.000 claims description 9
- 230000002093 peripheral effect Effects 0.000 claims description 8
- 238000007740 vapor deposition Methods 0.000 claims 1
- 239000010419 fine particle Substances 0.000 description 23
- 239000007789 gas Substances 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 238000005530 etching Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 4
- 239000011859 microparticle Substances 0.000 description 4
- 239000012495 reaction gas Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000001947 vapour-phase growth Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- JOHWNGGYGAVMGU-UHFFFAOYSA-N trifluorochlorine Chemical compound FCl(F)F JOHWNGGYGAVMGU-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (7)
- 열처리 용기 내에 회전 가능하게 구비되고, 기판이 배치되는 서셉터와;상기 열처리 용기 내에 설치되는 지지수단에 의해서 지지되고, 상기 서셉터에 근접하고 또한 비접촉이 되도록, 상기 서셉터의 주위를 둘러싸는 예열 링과;상기 서셉터에 배치되는 기판을 가열하는 가열장치가 구비되어 있는 열처리 장치에 있어서,상기 예열 링은 내주 중심이 상기 예열 링의 외주에 대하여, 편심하도록 형성되어 있는 것을 특징으로 하는 열처리 장치.
- 제 1 항에 있어서, 상기 지지수단은 상기 예열 링을 배치하기 위한 포켓이 형성된 베이스인 것을 특징으로 하는 열처리 장치.
- 제 1 항에 있어서, 상기 예열 링의 내주 중심과 상기 서셉터의 중심이 일치하는 것을 특징으로 하는 열처리 장치.
- 제 2 항에 있어서, 상기 베이스의 포켓 내주와, 상기 예열 링의 외주 사이에 소정의 틈이 생기도록, 상기 예열 링의 외경의 크기 및 상기 베이스의 포켓의 크기가 설정되는 것을 특징으로 하는 열처리 장치.
- 제 1 항에 기재된 열처리 장치에 있어서의 상기 지지수단에 의해서 지지되기 상기 예열 링을 상기 서셉터의 주위로 이동시켜, 상기 예열 링의 내주의 중심과 상기 서셉터의 중심의 거리가 최소가 되도록 상기 예열 링을 위치 결정하고, 그 후, 상기 서셉터에 기판을 배치하여, 상기 기판에 열처리를 실시하는 것을 특징으로 하는 열처리 방법.
- 제 2 항에 기재된 열처리 장치에 있어서의 베이스에 배치된 상기 예열 링을 상기 포켓 내로 이동시켜, 상기 예열 링의 내주의 중심과 상기 서셉터의 중심의 거리가 최소가 되도록 상기 예열 링을 위치 결정하고, 그 후, 상기 서셉터에 기판을 배치하여, 상기 기판에 열처리를 실시하는 것을 특징으로 하는 열처리 방법.
- 제 5 항 또는 제 6 항에 있어서, 상기 예열 링을 위치 결정한 후, 상기 서셉터에 기판을 배치하고, 상기 기판에 박막의 기상 성장을 실시하는 것을 특징으로 하는 열처리 방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002014715A JP3758579B2 (ja) | 2002-01-23 | 2002-01-23 | 熱処理装置および熱処理方法 |
JPJP-P-2002-00014715 | 2002-01-23 | ||
PCT/JP2003/000558 WO2003073486A1 (fr) | 2002-01-23 | 2003-01-22 | Dispositif et procede de traitement thermique |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040077746A true KR20040077746A (ko) | 2004-09-06 |
KR100941013B1 KR100941013B1 (ko) | 2010-02-05 |
Family
ID=27651314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020047011221A KR100941013B1 (ko) | 2002-01-23 | 2003-01-22 | 열처리 장치 및 열처리 방법 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7060944B2 (ko) |
EP (1) | EP1475823B1 (ko) |
JP (1) | JP3758579B2 (ko) |
KR (1) | KR100941013B1 (ko) |
DE (1) | DE60322669D1 (ko) |
TW (1) | TWI258189B (ko) |
WO (1) | WO2003073486A1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101525210B1 (ko) * | 2013-12-20 | 2015-06-05 | 주식회사 유진테크 | 기판 처리장치 |
KR20190100365A (ko) * | 2017-03-07 | 2019-08-28 | 가부시키가이샤 사무코 | 에피택셜 성장 장치 및 프리히트 링 그리고 그들을 이용한 에피택셜 웨이퍼의 제조 방법 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4348542B2 (ja) * | 2004-08-24 | 2009-10-21 | 信越半導体株式会社 | 石英治具及び半導体製造装置 |
JP5521561B2 (ja) * | 2010-01-12 | 2014-06-18 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法 |
US9171702B2 (en) * | 2010-06-30 | 2015-10-27 | Lam Research Corporation | Consumable isolation ring for movable substrate support assembly of a plasma processing chamber |
US9890455B2 (en) * | 2010-10-29 | 2018-02-13 | Applied Materials, Inc. | Pre-heat ring designs to increase deposition uniformity and substrate throughput |
DE102011007632B3 (de) * | 2011-04-18 | 2012-02-16 | Siltronic Ag | Verfahren und Vorrichtung zum Abscheiden einer von Prozessgas stammenden Materialschicht auf einer Substratscheibe |
US9481838B2 (en) | 2012-06-18 | 2016-11-01 | General Electric Company | Capture and storage of emissions from a gasifier |
JP5343162B1 (ja) * | 2012-10-26 | 2013-11-13 | エピクルー株式会社 | エピタキシャル成長装置 |
TWI648427B (zh) * | 2013-07-17 | 2019-01-21 | 應用材料股份有限公司 | 用於交叉流動類型的熱cvd腔室之改良的氣體活化的結構 |
US10047457B2 (en) | 2013-09-16 | 2018-08-14 | Applied Materials, Inc. | EPI pre-heat ring |
KR101539298B1 (ko) * | 2013-11-25 | 2015-07-29 | 주식회사 엘지실트론 | 에피택셜 웨이퍼 성장 장치 |
JP6444641B2 (ja) * | 2014-07-24 | 2018-12-26 | 株式会社ニューフレアテクノロジー | 成膜装置、サセプタ、及び成膜方法 |
SG11201701465QA (en) * | 2014-09-05 | 2017-03-30 | Applied Materials Inc | Susceptor and pre-heat ring for thermal processing of substrates |
CN108603290B (zh) | 2015-10-01 | 2021-09-10 | 环球晶圆股份有限公司 | Cvd设备 |
JP6789100B2 (ja) * | 2016-12-27 | 2020-11-25 | 昭和電工株式会社 | サセプタ、気相成長装置及び気相成長方法 |
JP6521140B2 (ja) * | 2018-04-24 | 2019-05-29 | 株式会社Sumco | エピタキシャル成長装置およびプリヒートリングならびにそれらを用いたエピタキシャルウェーハの製造方法 |
JP2020191346A (ja) * | 2019-05-21 | 2020-11-26 | クアーズテック株式会社 | サセプタおよびエピタキシャル成長装置 |
CN111477565B (zh) * | 2020-03-26 | 2023-06-16 | 北京北方华创微电子装备有限公司 | 一种外延设备 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS6052575B2 (ja) * | 1979-06-26 | 1985-11-20 | 株式会社日立国際電気 | 半導体気相成長装置 |
US5421957A (en) * | 1993-07-30 | 1995-06-06 | Applied Materials, Inc. | Low temperature etching in cold-wall CVD systems |
JP3122364B2 (ja) * | 1996-02-06 | 2001-01-09 | 東京エレクトロン株式会社 | ウエハボート |
US6153260A (en) * | 1997-04-11 | 2000-11-28 | Applied Materials, Inc. | Method for heating exhaust gas in a substrate reactor |
US6022587A (en) * | 1997-05-13 | 2000-02-08 | Applied Materials, Inc. | Method and apparatus for improving film deposition uniformity on a substrate |
US6176929B1 (en) * | 1997-07-22 | 2001-01-23 | Ebara Corporation | Thin-film deposition apparatus |
JPH1167670A (ja) * | 1997-08-14 | 1999-03-09 | Furukawa Electric Co Ltd:The | 気相成長装置 |
US6489241B1 (en) * | 1999-09-17 | 2002-12-03 | Applied Materials, Inc. | Apparatus and method for surface finishing a silicon film |
-
2002
- 2002-01-23 JP JP2002014715A patent/JP3758579B2/ja not_active Expired - Fee Related
-
2003
- 2003-01-22 EP EP03743012A patent/EP1475823B1/en not_active Expired - Lifetime
- 2003-01-22 US US10/500,122 patent/US7060944B2/en not_active Expired - Lifetime
- 2003-01-22 KR KR1020047011221A patent/KR100941013B1/ko active IP Right Grant
- 2003-01-22 WO PCT/JP2003/000558 patent/WO2003073486A1/ja active IP Right Grant
- 2003-01-22 TW TW092101373A patent/TWI258189B/zh not_active IP Right Cessation
- 2003-01-22 DE DE60322669T patent/DE60322669D1/de not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101525210B1 (ko) * | 2013-12-20 | 2015-06-05 | 주식회사 유진테크 | 기판 처리장치 |
KR20190100365A (ko) * | 2017-03-07 | 2019-08-28 | 가부시키가이샤 사무코 | 에피택셜 성장 장치 및 프리히트 링 그리고 그들을 이용한 에피택셜 웨이퍼의 제조 방법 |
US10975495B2 (en) | 2017-03-07 | 2021-04-13 | Sumco Corporation | Epitaxial growth apparatus, preheat ring, and method of manufacturing epitaxial wafer using these |
Also Published As
Publication number | Publication date |
---|---|
EP1475823A4 (en) | 2007-08-08 |
TW200302525A (en) | 2003-08-01 |
EP1475823A1 (en) | 2004-11-10 |
JP3758579B2 (ja) | 2006-03-22 |
US7060944B2 (en) | 2006-06-13 |
EP1475823B1 (en) | 2008-08-06 |
US20050106524A1 (en) | 2005-05-19 |
TWI258189B (en) | 2006-07-11 |
WO2003073486A1 (fr) | 2003-09-04 |
DE60322669D1 (de) | 2008-09-18 |
KR100941013B1 (ko) | 2010-02-05 |
JP2003218039A (ja) | 2003-07-31 |
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