KR20040068925A - 집적 회로 제조 동안 전하 축적을 광학적으로 제거하는 공정 - Google Patents

집적 회로 제조 동안 전하 축적을 광학적으로 제거하는 공정 Download PDF

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Publication number
KR20040068925A
KR20040068925A KR10-2004-7008048A KR20047008048A KR20040068925A KR 20040068925 A KR20040068925 A KR 20040068925A KR 20047008048 A KR20047008048 A KR 20047008048A KR 20040068925 A KR20040068925 A KR 20040068925A
Authority
KR
South Korea
Prior art keywords
integrated circuit
radiation pattern
broadband radiation
gate electrode
floating gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR10-2004-7008048A
Other languages
English (en)
Korean (ko)
Inventor
제이노스알란
베리이반
신노트안쏘니
스튜어트케빈
Original Assignee
액셀리스 테크놀로지스, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 액셀리스 테크놀로지스, 인크. filed Critical 액셀리스 테크놀로지스, 인크.
Publication of KR20040068925A publication Critical patent/KR20040068925A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01338—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

Landscapes

  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Non-Volatile Memory (AREA)
KR10-2004-7008048A 2001-11-30 2002-12-02 집적 회로 제조 동안 전하 축적을 광학적으로 제거하는 공정 Ceased KR20040068925A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/000,772 2001-11-30
US10/000,772 US6605484B2 (en) 2001-11-30 2001-11-30 Process for optically erasing charge buildup during fabrication of an integrated circuit
PCT/US2002/038310 WO2003049182A2 (en) 2001-11-30 2002-12-02 Process for optically erasing charge buildup during fabrication of an integrated circuit

Publications (1)

Publication Number Publication Date
KR20040068925A true KR20040068925A (ko) 2004-08-02

Family

ID=21692962

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2004-7008048A Ceased KR20040068925A (ko) 2001-11-30 2002-12-02 집적 회로 제조 동안 전하 축적을 광학적으로 제거하는 공정

Country Status (7)

Country Link
US (2) US6605484B2 (https=)
EP (1) EP1451868A2 (https=)
JP (1) JP4784851B2 (https=)
KR (1) KR20040068925A (https=)
CN (2) CN100565807C (https=)
AU (1) AU2002346599A1 (https=)
WO (1) WO2003049182A2 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6787484B2 (en) * 2002-12-17 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd Method of reducing visible light induced arcing in a semiconductor wafer manufacturing process
US20050250346A1 (en) * 2004-05-06 2005-11-10 Applied Materials, Inc. Process and apparatus for post deposition treatment of low k dielectric materials
US20060249175A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. High efficiency UV curing system
US20060251827A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. Tandem uv chamber for curing dielectric materials
CN103364706B (zh) * 2013-07-26 2017-03-08 上海华虹宏力半导体制造有限公司 验收测试装置及一次性可编程器件的验收测试方法
CN103820772B (zh) * 2014-02-12 2016-07-06 清华大学 去除pecvd装置的电荷的系统及其控制方法
US9576801B2 (en) * 2014-12-01 2017-02-21 Qualcomm Incorporated High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memory

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US4179627A (en) * 1977-06-10 1979-12-18 Tom Swift Enterprises, Inc. Electrical apparatus
IT1193733B (it) * 1980-05-30 1988-08-24 Gao Ges Automation Org Carta valori dotata di segni di autenticita sotto forma di sostanze luminescenti procedimento per il controllo della carta valori stessa ed apparecchio per l attuazione di tale procedimento
US4665426A (en) * 1985-02-01 1987-05-12 Advanced Micro Devices, Inc. EPROM with ultraviolet radiation transparent silicon nitride passivation layer
US4885047A (en) 1986-08-11 1989-12-05 Fusion Systems Corporation Apparatus for photoresist stripping
JPH01310577A (ja) 1988-06-08 1989-12-14 Seiko Instr Inc 半導体不揮発性メモリ
JPH04152519A (ja) * 1990-10-16 1992-05-26 Oki Electric Ind Co Ltd 半導体装置の製造方法
US5170091A (en) * 1990-12-10 1992-12-08 Ultraviolet Energy Generators, Inc. Linear ultraviolet flash lamp with self-replenishing cathode
US5117312A (en) * 1991-01-04 1992-05-26 Fusion Systems Corporation Apparatus including concave reflectors and a line of optical fibers
JPH08502381A (ja) * 1992-09-30 1996-03-12 フュージョン システムズ コーポレーション バルブ回転型無電極ランプ
US5712715A (en) * 1992-12-23 1998-01-27 Lucent Technologies Inc. Optical transmission system with spatially-varying Bragg reflector
US5541475A (en) 1993-04-16 1996-07-30 Fusion Lighting, Inc. Electrodeless lamp with profiled wall thickness
FR2707796B1 (fr) * 1993-06-30 1995-10-06 Sgs Thomson Microelectronics Procédé de gravure sous plasma d'une couche conductrice sur une tranche de silicium avec interposition d'une couche isolante mince.
US5530247A (en) * 1994-08-05 1996-06-25 Trw Inc. Millimeter wave imager device using pyroelectric effect
US5587330A (en) * 1994-10-20 1996-12-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US5633424A (en) * 1994-12-29 1997-05-27 Graves; Clinton G. Device and methods for plasma sterilization
US5656521A (en) * 1995-01-12 1997-08-12 Advanced Micro Devices, Inc. Method of erasing UPROM transistors
US5648669A (en) * 1995-05-26 1997-07-15 Cypress Semiconductor High speed flash memory cell structure and method
JP3502498B2 (ja) * 1996-01-22 2004-03-02 大日本スクリーン製造株式会社 基板処理装置
JP3872535B2 (ja) * 1996-03-14 2007-01-24 株式会社オーク製作所 ワークの電荷の消去中和装置
EP0848422B1 (en) * 1996-12-16 2002-03-27 STMicroelectronics S.r.l. Process for the manufacture of floating-gate non-volatile memories
US6081334A (en) * 1998-04-17 2000-06-27 Applied Materials, Inc Endpoint detection for semiconductor processes
US6369420B1 (en) * 1998-07-02 2002-04-09 Silicon Storage Technology, Inc. Method of self-aligning a floating gate to a control gate and to an isolation in an electrically erasable and programmable memory cell, and a cell made thereby
US6091652A (en) * 1998-12-11 2000-07-18 Lsi Logic Corporation Testing semiconductor devices for data retention
US6207989B1 (en) 1999-03-16 2001-03-27 Vantis Corporation Non-volatile memory device having a high-reliability composite insulation layer
US6350651B1 (en) * 1999-06-10 2002-02-26 Intel Corporation Method for making flash memory with UV opaque passivation layer
US6350699B1 (en) * 2000-05-30 2002-02-26 Sharp Laboratories Of America, Inc. Method for anisotropic plasma etching using non-chlorofluorocarbon, fluorine-based chemistry

Also Published As

Publication number Publication date
AU2002346599A1 (en) 2003-06-17
WO2003049182A2 (en) 2003-06-12
US6803319B2 (en) 2004-10-12
EP1451868A2 (en) 2004-09-01
CN100336205C (zh) 2007-09-05
US20030104644A1 (en) 2003-06-05
US6605484B2 (en) 2003-08-12
JP4784851B2 (ja) 2011-10-05
US20030180976A1 (en) 2003-09-25
CN100565807C (zh) 2009-12-02
CN1596467A (zh) 2005-03-16
WO2003049182A3 (en) 2003-09-12
CN101145520A (zh) 2008-03-19
JP2005512324A (ja) 2005-04-28

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