JP4784851B2 - 集積回路の製造中に光学的に蓄積電荷を消去する方法及び装置 - Google Patents

集積回路の製造中に光学的に蓄積電荷を消去する方法及び装置 Download PDF

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JP4784851B2
JP4784851B2 JP2003550278A JP2003550278A JP4784851B2 JP 4784851 B2 JP4784851 B2 JP 4784851B2 JP 2003550278 A JP2003550278 A JP 2003550278A JP 2003550278 A JP2003550278 A JP 2003550278A JP 4784851 B2 JP4784851 B2 JP 4784851B2
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gate electrode
radiation pattern
floating gate
integrated circuit
broadband radiation
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Japanese (ja)
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JP2005512324A5 (https=
JP2005512324A (ja
Inventor
ジェイノス アラン
ベリー アイヴァン
シノット アンソニー
スチュワート ケビン
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アクセリス テクノロジーズ インコーポレーテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0411—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H10D64/01338—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid with a treatment, e.g. annealing, after the formation of the conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

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  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Non-Volatile Memory (AREA)
JP2003550278A 2001-11-30 2002-12-02 集積回路の製造中に光学的に蓄積電荷を消去する方法及び装置 Expired - Fee Related JP4784851B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/000,772 2001-11-30
US10/000,772 US6605484B2 (en) 2001-11-30 2001-11-30 Process for optically erasing charge buildup during fabrication of an integrated circuit
PCT/US2002/038310 WO2003049182A2 (en) 2001-11-30 2002-12-02 Process for optically erasing charge buildup during fabrication of an integrated circuit

Publications (3)

Publication Number Publication Date
JP2005512324A JP2005512324A (ja) 2005-04-28
JP2005512324A5 JP2005512324A5 (https=) 2005-12-22
JP4784851B2 true JP4784851B2 (ja) 2011-10-05

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ID=21692962

Family Applications (1)

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JP2003550278A Expired - Fee Related JP4784851B2 (ja) 2001-11-30 2002-12-02 集積回路の製造中に光学的に蓄積電荷を消去する方法及び装置

Country Status (7)

Country Link
US (2) US6605484B2 (https=)
EP (1) EP1451868A2 (https=)
JP (1) JP4784851B2 (https=)
KR (1) KR20040068925A (https=)
CN (2) CN100565807C (https=)
AU (1) AU2002346599A1 (https=)
WO (1) WO2003049182A2 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6787484B2 (en) * 2002-12-17 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd Method of reducing visible light induced arcing in a semiconductor wafer manufacturing process
US20050250346A1 (en) * 2004-05-06 2005-11-10 Applied Materials, Inc. Process and apparatus for post deposition treatment of low k dielectric materials
US20060249175A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. High efficiency UV curing system
US20060251827A1 (en) * 2005-05-09 2006-11-09 Applied Materials, Inc. Tandem uv chamber for curing dielectric materials
CN103364706B (zh) * 2013-07-26 2017-03-08 上海华虹宏力半导体制造有限公司 验收测试装置及一次性可编程器件的验收测试方法
CN103820772B (zh) * 2014-02-12 2016-07-06 清华大学 去除pecvd装置的电荷的系统及其控制方法
US9576801B2 (en) * 2014-12-01 2017-02-21 Qualcomm Incorporated High dielectric constant/metal gate (HK/MG) compatible floating gate (FG)/ferroelectric dipole non-volatile memory

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JPH09251936A (ja) * 1996-03-14 1997-09-22 Orc Mfg Co Ltd ワークの電荷の消去中和装置およびその方法
US5712715A (en) * 1992-12-23 1998-01-27 Lucent Technologies Inc. Optical transmission system with spatially-varying Bragg reflector
WO1999054926A1 (en) * 1998-04-17 1999-10-28 Applied Materials, Inc. Improved endpoint detection for semiconductor processes

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IT1193733B (it) * 1980-05-30 1988-08-24 Gao Ges Automation Org Carta valori dotata di segni di autenticita sotto forma di sostanze luminescenti procedimento per il controllo della carta valori stessa ed apparecchio per l attuazione di tale procedimento
US4665426A (en) * 1985-02-01 1987-05-12 Advanced Micro Devices, Inc. EPROM with ultraviolet radiation transparent silicon nitride passivation layer
US4885047A (en) 1986-08-11 1989-12-05 Fusion Systems Corporation Apparatus for photoresist stripping
JPH01310577A (ja) 1988-06-08 1989-12-14 Seiko Instr Inc 半導体不揮発性メモリ
JPH04152519A (ja) * 1990-10-16 1992-05-26 Oki Electric Ind Co Ltd 半導体装置の製造方法
US5170091A (en) * 1990-12-10 1992-12-08 Ultraviolet Energy Generators, Inc. Linear ultraviolet flash lamp with self-replenishing cathode
US5117312A (en) * 1991-01-04 1992-05-26 Fusion Systems Corporation Apparatus including concave reflectors and a line of optical fibers
JPH08502381A (ja) * 1992-09-30 1996-03-12 フュージョン システムズ コーポレーション バルブ回転型無電極ランプ
US5541475A (en) 1993-04-16 1996-07-30 Fusion Lighting, Inc. Electrodeless lamp with profiled wall thickness
FR2707796B1 (fr) * 1993-06-30 1995-10-06 Sgs Thomson Microelectronics Procédé de gravure sous plasma d'une couche conductrice sur une tranche de silicium avec interposition d'une couche isolante mince.
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Publication number Priority date Publication date Assignee Title
US5712715A (en) * 1992-12-23 1998-01-27 Lucent Technologies Inc. Optical transmission system with spatially-varying Bragg reflector
JPH09199460A (ja) * 1996-01-22 1997-07-31 Dainippon Screen Mfg Co Ltd 基板処理装置
JPH09251936A (ja) * 1996-03-14 1997-09-22 Orc Mfg Co Ltd ワークの電荷の消去中和装置およびその方法
WO1999054926A1 (en) * 1998-04-17 1999-10-28 Applied Materials, Inc. Improved endpoint detection for semiconductor processes

Also Published As

Publication number Publication date
KR20040068925A (ko) 2004-08-02
AU2002346599A1 (en) 2003-06-17
WO2003049182A2 (en) 2003-06-12
US6803319B2 (en) 2004-10-12
EP1451868A2 (en) 2004-09-01
CN100336205C (zh) 2007-09-05
US20030104644A1 (en) 2003-06-05
US6605484B2 (en) 2003-08-12
US20030180976A1 (en) 2003-09-25
CN100565807C (zh) 2009-12-02
CN1596467A (zh) 2005-03-16
WO2003049182A3 (en) 2003-09-12
CN101145520A (zh) 2008-03-19
JP2005512324A (ja) 2005-04-28

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