KR20040005977A - 미리 규정된 층 두께 프로파일을 가진 층의 제조 방법 - Google Patents
미리 규정된 층 두께 프로파일을 가진 층의 제조 방법 Download PDFInfo
- Publication number
- KR20040005977A KR20040005977A KR10-2003-7015186A KR20037015186A KR20040005977A KR 20040005977 A KR20040005977 A KR 20040005977A KR 20037015186 A KR20037015186 A KR 20037015186A KR 20040005977 A KR20040005977 A KR 20040005977A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- ion beam
- predefined
- thickness profile
- layer thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims description 15
- 238000009826 distribution Methods 0.000 claims description 6
- 238000005259 measurement Methods 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- 239000003990 capacitor Substances 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000000151 deposition Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000002848 electrochemical method Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000009885 systemic effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5826—Treatment with charged particles
- C23C14/5833—Ion beam bombardment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5873—Removal of material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/56—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
- H01C17/24—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material
- H01C17/2404—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming by removing or adding resistive material by charged particle impact, e.g. by electron or ion beam milling, sputtering, plasma etching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Powder Metallurgy (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2001/005889 WO2002095085A1 (de) | 2001-05-22 | 2001-05-22 | Frequenzabgleich für bulk-acoustic-wave resonatoren durch lokales ionenstrahlätzen |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20040005977A true KR20040005977A (ko) | 2004-01-16 |
Family
ID=8164429
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2003-7015186A Ceased KR20040005977A (ko) | 2001-05-22 | 2001-05-22 | 미리 규정된 층 두께 프로파일을 가진 층의 제조 방법 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20040212459A1 (cg-RX-API-DMAC10.html) |
| EP (2) | EP1390559B1 (cg-RX-API-DMAC10.html) |
| JP (1) | JP2004527972A (cg-RX-API-DMAC10.html) |
| KR (1) | KR20040005977A (cg-RX-API-DMAC10.html) |
| DE (2) | DE50112976D1 (cg-RX-API-DMAC10.html) |
| WO (1) | WO2002095085A1 (cg-RX-API-DMAC10.html) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004054895B4 (de) * | 2004-11-12 | 2007-04-19 | Infineon Technologies Ag | Dünnschicht-BAW-Filter sowie Verfahren zur Herstellung eines Dünnschicht-BAW-Filters |
| JP2008098528A (ja) * | 2006-10-13 | 2008-04-24 | Toshiba Corp | 半導体装置の製造方法 |
| US7535324B2 (en) | 2007-06-15 | 2009-05-19 | Avago Technologies Wireless Ip, Pte. Ltd. | Piezoelectric resonator structure and method for manufacturing a coupled resonator device |
| FR2941878B1 (fr) * | 2009-02-10 | 2011-05-06 | Quertech Ingenierie | Procede de traitement par un faisceau d'ions d'une couche metallique deposee sur un substrat |
| US8479363B2 (en) * | 2010-05-11 | 2013-07-09 | Hao Zhang | Methods for wafer level trimming of acoustically coupled resonator filter |
| JP6719178B2 (ja) * | 2015-05-22 | 2020-07-08 | エスアイアイ・クリスタルテクノロジー株式会社 | 圧電振動片の製造方法及び圧電振動子の製造方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2877338A (en) * | 1954-10-22 | 1959-03-10 | James Knights Company | Method of adjusting the operating frequency of sealed piezoelectric crystals |
| US3699334A (en) * | 1969-06-16 | 1972-10-17 | Kollsman Instr Corp | Apparatus using a beam of positive ions for controlled erosion of surfaces |
| FR2354617A1 (fr) * | 1976-06-08 | 1978-01-06 | Electro Resistance | Procede pour la fabrication de resistances electriques a partir de feuilles ou de films metalliques et resistances obtenues |
| JPS58106750A (ja) * | 1981-12-18 | 1983-06-25 | Toshiba Corp | フオ−カスイオンビ−ム加工方法 |
| JPS6042832A (ja) * | 1983-08-18 | 1985-03-07 | Matsushita Electric Ind Co Ltd | イオンビ−ム装置 |
| JPS61137327A (ja) * | 1984-12-10 | 1986-06-25 | Nec Corp | 層間絶縁膜のエツチング方法 |
| DE3688860T2 (de) * | 1985-05-28 | 1993-11-25 | Rikagaku Kenkyusho | Mittels Elektronenstrahl angeregte Ionenstrahlquelle. |
| JP2713923B2 (ja) * | 1987-10-07 | 1998-02-16 | 株式会社日立製作所 | 集束イオンビームを用いたデバイス加工方法 |
| JPH04196610A (ja) * | 1990-11-26 | 1992-07-16 | Seiko Epson Corp | 圧電振動子の周波数調整方法 |
| US5266529A (en) * | 1991-10-21 | 1993-11-30 | Trw Inc. | Focused ion beam for thin film resistor trim on aluminum nitride substrates |
| JPH0773834A (ja) * | 1993-08-31 | 1995-03-17 | Nippon Steel Corp | 透過電子顕微鏡用薄膜試料作製方法 |
| US5876860A (en) * | 1997-12-09 | 1999-03-02 | N.V. Interturbine | Thermal barrier coating ceramic structure |
| JP3473538B2 (ja) * | 1999-05-14 | 2003-12-08 | 株式会社村田製作所 | 圧電部品の周波数調整装置及び周波数調整方法 |
| US6529311B1 (en) * | 1999-10-28 | 2003-03-04 | The Trustees Of Boston University | MEMS-based spatial-light modulator with integrated electronics |
| US6307447B1 (en) * | 1999-11-01 | 2001-10-23 | Agere Systems Guardian Corp. | Tuning mechanical resonators for electrical filter |
| WO2002005315A2 (en) * | 2000-07-10 | 2002-01-17 | Epion Corporation | System and method for improving thin films by gas cluster ion be am processing |
| US6456173B1 (en) * | 2001-02-15 | 2002-09-24 | Nokia Mobile Phones Ltd. | Method and system for wafer-level tuning of bulk acoustic wave resonators and filters |
| US6456011B1 (en) * | 2001-02-23 | 2002-09-24 | Front Range Fakel, Inc. | Magnetic field for small closed-drift ion source |
| US6874211B2 (en) * | 2001-03-05 | 2005-04-05 | Agilent Technologies, Inc. | Method for producing thin film bulk acoustic resonators (FBARs) with different frequencies on the same substrate by subtracting method and apparatus embodying the method |
| US6441702B1 (en) * | 2001-04-27 | 2002-08-27 | Nokia Mobile Phones Ltd. | Method and system for wafer-level tuning of bulk acoustic wave resonators and filters |
-
2001
- 2001-05-22 KR KR10-2003-7015186A patent/KR20040005977A/ko not_active Ceased
- 2001-05-22 EP EP01962685A patent/EP1390559B1/de not_active Expired - Lifetime
- 2001-05-22 DE DE50112976T patent/DE50112976D1/de not_active Expired - Lifetime
- 2001-05-22 US US10/478,751 patent/US20040212459A1/en not_active Abandoned
- 2001-05-22 WO PCT/EP2001/005889 patent/WO2002095085A1/de not_active Ceased
- 2001-05-22 DE DE50114591T patent/DE50114591D1/de not_active Expired - Lifetime
- 2001-05-22 EP EP07008531A patent/EP1816233B1/de not_active Expired - Lifetime
- 2001-05-22 JP JP2002591547A patent/JP2004527972A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| EP1390559B1 (de) | 2007-09-05 |
| DE50114591D1 (de) | 2009-01-29 |
| EP1390559A1 (de) | 2004-02-25 |
| EP1816233A3 (de) | 2007-08-22 |
| DE50112976D1 (de) | 2007-10-18 |
| JP2004527972A (ja) | 2004-09-09 |
| EP1816233A2 (de) | 2007-08-08 |
| US20040212459A1 (en) | 2004-10-28 |
| WO2002095085A1 (de) | 2002-11-28 |
| WO2002095085A8 (de) | 2002-12-19 |
| EP1816233B1 (de) | 2008-12-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0105 | International application |
Patent event date: 20031121 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PA0201 | Request for examination | ||
| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20050830 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20060228 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20050830 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |