KR20030058613A - 박막 트랜지스터 형성 방법 - Google Patents
박막 트랜지스터 형성 방법 Download PDFInfo
- Publication number
- KR20030058613A KR20030058613A KR1020010089127A KR20010089127A KR20030058613A KR 20030058613 A KR20030058613 A KR 20030058613A KR 1020010089127 A KR1020010089127 A KR 1020010089127A KR 20010089127 A KR20010089127 A KR 20010089127A KR 20030058613 A KR20030058613 A KR 20030058613A
- Authority
- KR
- South Korea
- Prior art keywords
- oxide film
- layer
- silicon oxide
- amorphous silicon
- film
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract description 31
- 239000010409 thin film Substances 0.000 title abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 30
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000005530 etching Methods 0.000 claims abstract description 10
- 238000002161 passivation Methods 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 56
- 239000002184 metal Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 11
- 238000005468 ion implantation Methods 0.000 claims description 5
- 239000011241 protective layer Substances 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 74
- 150000002500 ions Chemical class 0.000 abstract description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- 238000002425 crystallisation Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 6
- 230000008025 crystallization Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 206010048334 Mobility decreased Diseases 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
- G02F1/136245—Active matrix addressed cells having more than one switching element per pixel having complementary transistors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13625—Patterning using multi-mask exposure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/42—Arrangements for providing conduction through an insulating substrate
Landscapes
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
Claims (1)
- 절연 기판 상에 완충 산화막, 비정질 실리콘층 및 제 1실리콘 산화막을 진공상태에서 연속적으로 증착하는 단계와,상기 비정질 실리콘층과 제 1실리콘 산화막을 식각하여 활성층을 형성하는 단계와,상기 완충 산화막 상에 상기 잔류된 제 1실리콘 산화막을 덮도록 제 2실리콘 산화막과 게이트 형성용 도전막을 차례로 형성하는 단계와,상기 도전막을 식각하여 게이트를 형성하는 단계와,상기 잔류된 제 1실리콘 산화막 및 상기 제 2실리콘 산화막을 식각하여 게이트 절연막을 형성하는 단계와,상기 비정질 실리콘층에 이온 주입에 의해 각각의 엘디디영역 및 소오스/드레인영역을 형성하는 단계와,상기 엘디디영역 및 소오스/드레인영역을 포함한 비정질 실리콘층을 결정화시키는 단계와,상기 결과물을 덮으며, 상기 소오스/드레인영역을 노출시키는 각각의 콘택홀을 가진 보호막을 형성하는 단계와,상기 보호막 상에 각각의 콘택홀을 덮는 제 1및 제 2금속배선을 형성하는 단계를 포함하는 것을 특징으로 하는 박막 트랜지스터 형성 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010089127A KR100837883B1 (ko) | 2001-12-31 | 2001-12-31 | 박막 트랜지스터 형성 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020010089127A KR100837883B1 (ko) | 2001-12-31 | 2001-12-31 | 박막 트랜지스터 형성 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20030058613A true KR20030058613A (ko) | 2003-07-07 |
KR100837883B1 KR100837883B1 (ko) | 2008-06-12 |
Family
ID=32216512
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020010089127A KR100837883B1 (ko) | 2001-12-31 | 2001-12-31 | 박막 트랜지스터 형성 방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100837883B1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7528021B2 (en) | 2004-09-16 | 2009-05-05 | Samsung Electronics Co., Ltd. | Thin film transistor array panel and method of manufacturing the same |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000277738A (ja) * | 1999-03-19 | 2000-10-06 | Fujitsu Ltd | 薄膜トランジスタおよびその製造方法 |
KR100313125B1 (ko) * | 1999-12-08 | 2001-11-07 | 김순택 | 박막 트랜지스터의 제조 방법 |
-
2001
- 2001-12-31 KR KR1020010089127A patent/KR100837883B1/ko active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7528021B2 (en) | 2004-09-16 | 2009-05-05 | Samsung Electronics Co., Ltd. | Thin film transistor array panel and method of manufacturing the same |
US7803672B2 (en) | 2004-09-16 | 2010-09-28 | Samsung Electronics Co., Ltd. | Thin film transistor array panel and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
KR100837883B1 (ko) | 2008-06-12 |
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