KR20030052022A - 반도체 소자의 제조방법 - Google Patents
반도체 소자의 제조방법 Download PDFInfo
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- KR20030052022A KR20030052022A KR1020010081825A KR20010081825A KR20030052022A KR 20030052022 A KR20030052022 A KR 20030052022A KR 1020010081825 A KR1020010081825 A KR 1020010081825A KR 20010081825 A KR20010081825 A KR 20010081825A KR 20030052022 A KR20030052022 A KR 20030052022A
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- Prior art keywords
- gate
- film
- layer
- semiconductor substrate
- forming
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 230000000903 blocking effect Effects 0.000 claims abstract description 23
- 238000002955 isolation Methods 0.000 claims abstract description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 21
- 239000010941 cobalt Substances 0.000 claims description 21
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 21
- 238000004519 manufacturing process Methods 0.000 claims description 12
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 4
- 239000011259 mixed solution Substances 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 238000000137 annealing Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000005380 borophosphosilicate glass Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 229910021332 silicide Inorganic materials 0.000 claims 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract 5
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 3
- 230000000593 degrading effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823835—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes silicided or salicided gate conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (7)
- 소자분리막이 형성된 반도체 기판상에 게이트를 형성하는 단계;상기 게이트를 포함한 반도체 기판의 표면상에 제 1 절연막과 제 2 절연막을 차례로 형성하고 게이트 양측면에만 남도록 상기 제 1, 2 절연막을 선택적으로 제거하여 절연막 측벽을 형성하는 단계;상기 게이트 및 절연막 측벽 양측의 반도체 기판에 소오스/드레인 영역을 형성하는 단계;상기 게이트 상면이 완전히 덮이도록 상기 반도체 기판상에 블로킹막을 평탄 형성하는 단계;게이트 및 절연막 측벽 상부가 소정 두께로 노출되도록 상기 블로킹막을 제거함과 동시에 상기 노출된 게이트 양측의 제 1 절연막을 제거하여 게이트 상부 양측면을 노출하는 단계;상기 노출된 게이트 상면 및 상부 양측면에 제 1 살리사이드막을 형성하는 단계;상기 블로킹막을 완전히 제거하여 상기 소오스/드레인 영역이 형성된 반도체 기판을 노출하는 단계;상기 게이트 상면과 소오스/드레인 영역이 형성된 반도체 기판의 표면에 제 2 살리사이드막을 형성하는 단계를 포함하여 형성함을 특징으로 하는 반도체 소자의 제조방법.
- 제 1항에 있어서, 상기 제 1 살리사이드막은 반도체 기판상에 제 1 코발트막(Co)과 제 1 티타늄 질화막(TiN)을 차례로 형성하고 300∼400℃에서 1차 열처리 공정을 실시하여 상기 게이트와 제 1 코발트막을 반응시키어 형성함을 특징으로 하는 반도체 소자의 제조방법.
- 제 1항에 있어서, 상기 제 2 살리사이드막은 반도체 기판상에 제 2 코발트막과 제 2 티타늄 질화막을 차례로 형성하고 400∼600℃에서 2차 열처리 공정을 실시하여 상기 게이트 및 상기 소오스/드레인 영역이 형성된 반도체 기판과 상기 제 2 코발트막을 반응시키어 형성함을 특징으로 하는 반도체 소자의 제조방법.
- 제 1항에 있어서, 상기 블로킹막은 3900∼4100Å 두께의 BPSG막으로 형성함을 특징으로 하는 반도체 소자의 제조방법.
- 제 1항에 있어서, 상기 블로킹막은 750∼850℃의 온도에서 30∼60분 동안 어닐링 공정을 실시하여 평탄화시키는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제 1항에 있어서, 상기 블로킹막에 대한 식각 타겟을 2300∼2500Å으로 하는 에치백 공정으로 상기 게이트 및 절연막 측벽 상부를 노출키는 것을 특징으로 하는 반도체 소자의 제조방법.
- 제 2항에 있어서, 상기 제 1 실리사이드막을 형성한 후에 잔류하는 제 1 티타늄 질화막과 제 1 코발트막을 NH4OH, H2O2,H2O의 혼합 용액을 이용하여 10∼15분간 처리한 후, HCl, H2O2, H2O 혼합 용액을 이용하여 10∼15분간 처리하여 제거하는 공정을 더 포함하여 형성함을 특징으로 하는 반도체 소자의 제조방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2001-0081825A KR100404231B1 (ko) | 2001-12-20 | 2001-12-20 | 반도체 소자의 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR10-2001-0081825A KR100404231B1 (ko) | 2001-12-20 | 2001-12-20 | 반도체 소자의 제조방법 |
Publications (2)
Publication Number | Publication Date |
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KR20030052022A true KR20030052022A (ko) | 2003-06-26 |
KR100404231B1 KR100404231B1 (ko) | 2003-11-05 |
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KR10-2001-0081825A KR100404231B1 (ko) | 2001-12-20 | 2001-12-20 | 반도체 소자의 제조방법 |
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Families Citing this family (1)
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KR20230020702A (ko) | 2021-08-04 | 2023-02-13 | 금오공과대학교 산학협력단 | 화분 관리를 위한 급수기 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH10223889A (ja) * | 1997-02-04 | 1998-08-21 | Mitsubishi Electric Corp | Misトランジスタおよびその製造方法 |
JPH10335651A (ja) * | 1997-05-28 | 1998-12-18 | Oki Electric Ind Co Ltd | Mosfet及びmosfetの製造方法 |
KR100320446B1 (ko) * | 1999-04-15 | 2002-01-15 | 김영환 | 반도체 소자의 실리사이드 형성방법 |
KR100537275B1 (ko) * | 1999-12-03 | 2005-12-19 | 주식회사 하이닉스반도체 | 반도체 소자 제조방법 |
KR100318311B1 (ko) * | 2000-01-12 | 2001-12-22 | 박종섭 | 반도체장치의 실리사이드층 형성방법 |
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- 2001-12-20 KR KR10-2001-0081825A patent/KR100404231B1/ko active IP Right Grant
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