KR20030051197A - 포지티브 레지스트 조성물 - Google Patents

포지티브 레지스트 조성물 Download PDF

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Publication number
KR20030051197A
KR20030051197A KR1020020058670A KR20020058670A KR20030051197A KR 20030051197 A KR20030051197 A KR 20030051197A KR 1020020058670 A KR1020020058670 A KR 1020020058670A KR 20020058670 A KR20020058670 A KR 20020058670A KR 20030051197 A KR20030051197 A KR 20030051197A
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KR
South Korea
Prior art keywords
group
general formula
repeating unit
alicyclic hydrocarbon
resist composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020020058670A
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English (en)
Korean (ko)
Inventor
사토겐이치로
Original Assignee
후지 샤신 필름 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지 샤신 필름 가부시기가이샤 filed Critical 후지 샤신 필름 가부시기가이샤
Publication of KR20030051197A publication Critical patent/KR20030051197A/ko
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
KR1020020058670A 2001-09-28 2002-09-27 포지티브 레지스트 조성물 Ceased KR20030051197A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00300944 2001-09-28
JP2001300944A JP4149153B2 (ja) 2001-09-28 2001-09-28 ポジ型レジスト組成物

Publications (1)

Publication Number Publication Date
KR20030051197A true KR20030051197A (ko) 2003-06-25

Family

ID=19121434

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020058670A Ceased KR20030051197A (ko) 2001-09-28 2002-09-27 포지티브 레지스트 조성물

Country Status (3)

Country Link
JP (1) JP4149153B2 (enExample)
KR (1) KR20030051197A (enExample)
TW (1) TWI261147B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100613851B1 (ko) * 2004-06-03 2006-08-18 윤미숙 네트워크 기반의 근막마사지를 이용한 성형 서비스 시스템및 그 방법
KR100904068B1 (ko) * 2007-09-04 2009-06-23 제일모직주식회사 컬러필터용 감광성 수지 조성물 및 이를 이용한 컬러필터

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3890989B2 (ja) 2002-01-25 2007-03-07 住友化学株式会社 レジスト組成物
CN1603957A (zh) * 2003-10-03 2005-04-06 住友化学工业株式会社 化学放大型正光刻胶组合物及其树脂
JP2005234015A (ja) * 2004-02-17 2005-09-02 Fuji Photo Film Co Ltd 液浸露光用ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP4622579B2 (ja) * 2004-04-23 2011-02-02 住友化学株式会社 化学増幅型ポジ型レジスト組成物及び（メタ）アクリル酸誘導体とその製法
EP2046714B1 (en) 2006-06-20 2015-12-09 Allergan, Inc. Cyclopentane derivatives as antiglaucoma agents
CA2657625C (en) * 2006-07-10 2016-06-21 Allergan, Inc. Therapeutic compounds
JP5205027B2 (ja) * 2007-07-18 2013-06-05 東京応化工業株式会社 化合物の製造方法
JP5806800B2 (ja) 2008-03-28 2015-11-10 富士フイルム株式会社 ポジ型レジスト組成物およびそれを用いたパターン形成方法
JP5862657B2 (ja) * 2011-03-31 2016-02-16 Jsr株式会社 フォトレジスト組成物
JP5967082B2 (ja) * 2011-05-19 2016-08-10 Jsr株式会社 フォトレジスト組成物
JP5954332B2 (ja) * 2011-09-29 2016-07-20 Jsr株式会社 フォトレジスト組成物及びレジストパターン形成方法
JP6007913B2 (ja) * 2011-09-30 2016-10-19 Jsr株式会社 フォトレジスト組成物及びレジストパターン形成方法
JP5783111B2 (ja) * 2012-03-29 2015-09-24 Jsr株式会社 フォトレジスト組成物及びレジストパターン形成方法
JP6019677B2 (ja) * 2012-04-02 2016-11-02 Jsr株式会社 フォトレジスト組成物及びレジストパターン形成方法
KR20140055050A (ko) * 2012-10-30 2014-05-09 제일모직주식회사 레지스트 하층막용 조성물 및 상기 레지스트 하층막용 조성물을 사용한 패턴 형성 방법
JP6131793B2 (ja) * 2013-09-09 2017-05-24 Jsr株式会社 感放射線性樹脂組成物、レジストパターン形成方法、重合体及び化合物
JP6571177B2 (ja) * 2015-05-14 2019-09-04 富士フイルム株式会社 パターン形成方法、電子デバイスの製造方法、及び、感活性光線性又は感放射線性樹脂組成物
JP7101773B2 (ja) * 2018-06-28 2022-07-15 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、パターン形成方法、電子デバイスの製造方法、樹脂
US12282254B2 (en) 2021-09-30 2025-04-22 Dupont Electronic Materials International, Llc Photoresist compositions and pattern formation methods

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10239846A (ja) * 1997-02-27 1998-09-11 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JPH10274852A (ja) * 1997-01-29 1998-10-13 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
JP2000347408A (ja) * 1999-06-04 2000-12-15 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10274852A (ja) * 1997-01-29 1998-10-13 Sumitomo Chem Co Ltd 化学増幅型ポジ型レジスト組成物
JPH10239846A (ja) * 1997-02-27 1998-09-11 Fuji Photo Film Co Ltd ポジ型フォトレジスト組成物
JP2000347408A (ja) * 1999-06-04 2000-12-15 Fuji Photo Film Co Ltd 遠紫外線露光用ポジ型フォトレジスト組成物

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100613851B1 (ko) * 2004-06-03 2006-08-18 윤미숙 네트워크 기반의 근막마사지를 이용한 성형 서비스 시스템및 그 방법
KR100904068B1 (ko) * 2007-09-04 2009-06-23 제일모직주식회사 컬러필터용 감광성 수지 조성물 및 이를 이용한 컬러필터
US8263675B2 (en) 2007-09-04 2012-09-11 Cheil Industries Inc. Photosensitive resin composition for color filter and color filter made using the same

Also Published As

Publication number Publication date
JP4149153B2 (ja) 2008-09-10
TWI261147B (en) 2006-09-01
JP2003107709A (ja) 2003-04-09

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