KR20030051182A - 반도체 장치 및 그 제조 방법 - Google Patents

반도체 장치 및 그 제조 방법 Download PDF

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Publication number
KR20030051182A
KR20030051182A KR1020020054859A KR20020054859A KR20030051182A KR 20030051182 A KR20030051182 A KR 20030051182A KR 1020020054859 A KR1020020054859 A KR 1020020054859A KR 20020054859 A KR20020054859 A KR 20020054859A KR 20030051182 A KR20030051182 A KR 20030051182A
Authority
KR
South Korea
Prior art keywords
peripheral circuit
gate electrode
memory cell
conductive layer
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020020054859A
Other languages
English (en)
Korean (ko)
Inventor
아라끼야스히로
시미즈사또시
Original Assignee
미쓰비시덴키 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시덴키 가부시키가이샤 filed Critical 미쓰비시덴키 가부시키가이샤
Publication of KR20030051182A publication Critical patent/KR20030051182A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/092—Manufacture or treatment of dielectric parts thereof by smoothing the dielectric parts

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1020020054859A 2001-12-14 2002-09-11 반도체 장치 및 그 제조 방법 Ceased KR20030051182A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001381095A JP2003188286A (ja) 2001-12-14 2001-12-14 半導体装置およびその製造方法
JPJP-P-2001-00381095 2001-12-14

Publications (1)

Publication Number Publication Date
KR20030051182A true KR20030051182A (ko) 2003-06-25

Family

ID=19187290

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020054859A Ceased KR20030051182A (ko) 2001-12-14 2002-09-11 반도체 장치 및 그 제조 방법

Country Status (4)

Country Link
US (1) US6621117B2 (https=)
JP (1) JP2003188286A (https=)
KR (1) KR20030051182A (https=)
TW (1) TW556334B (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100448911B1 (ko) * 2002-09-04 2004-09-16 삼성전자주식회사 더미 패턴을 갖는 비휘발성 기억소자
US7354464B2 (en) * 2004-12-17 2008-04-08 Texaco Inc. Apparatus and method for producing hydrogen
EP1863089A1 (en) * 2006-05-31 2007-12-05 STMicroelectronics S.r.l. Non-active electrically structures of integrated electronic circuit
KR101030101B1 (ko) 2006-06-30 2011-04-20 후지쯔 세미컨덕터 가부시키가이샤 반도체 장치와 반도체 장치의 제조 방법
KR101361828B1 (ko) * 2007-09-03 2014-02-12 삼성전자주식회사 반도체 디바이스, 반도체 패키지, 스택 모듈, 카드, 시스템및 반도체 디바이스의 제조 방법
JP4649487B2 (ja) 2008-03-17 2011-03-09 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
JP5364336B2 (ja) * 2008-11-04 2013-12-11 株式会社東芝 半導体記憶装置
KR101804420B1 (ko) 2010-06-14 2018-01-11 삼성전자주식회사 반도체 소자 및 그 제조 방법
JP2014056989A (ja) 2012-09-13 2014-03-27 Toshiba Corp 半導体記憶装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10229178A (ja) * 1997-02-13 1998-08-25 Mitsubishi Electric Corp 半導体装置の製造方法
JPH11284151A (ja) * 1998-03-27 1999-10-15 Toshiba Corp 半導体装置及びその製造方法
JP2000286350A (ja) * 1999-01-26 2000-10-13 Nec Corp 不揮発性半導体記憶装置およびその製造方法
KR20020082667A (ko) * 2001-04-25 2002-10-31 삼성전자 주식회사 더미패턴을 이용한 평탄화방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3586072B2 (ja) * 1997-07-10 2004-11-10 株式会社東芝 不揮発性半導体記憶装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10229178A (ja) * 1997-02-13 1998-08-25 Mitsubishi Electric Corp 半導体装置の製造方法
JPH11284151A (ja) * 1998-03-27 1999-10-15 Toshiba Corp 半導体装置及びその製造方法
JP2000286350A (ja) * 1999-01-26 2000-10-13 Nec Corp 不揮発性半導体記憶装置およびその製造方法
KR20020082667A (ko) * 2001-04-25 2002-10-31 삼성전자 주식회사 더미패턴을 이용한 평탄화방법

Also Published As

Publication number Publication date
US20030111671A1 (en) 2003-06-19
JP2003188286A (ja) 2003-07-04
US6621117B2 (en) 2003-09-16
TW556334B (en) 2003-10-01

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