KR20020058917A - 박막트랜지스터 및 그 제조방법 - Google Patents
박막트랜지스터 및 그 제조방법 Download PDFInfo
- Publication number
- KR20020058917A KR20020058917A KR1020000087051A KR20000087051A KR20020058917A KR 20020058917 A KR20020058917 A KR 20020058917A KR 1020000087051 A KR1020000087051 A KR 1020000087051A KR 20000087051 A KR20000087051 A KR 20000087051A KR 20020058917 A KR20020058917 A KR 20020058917A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- thin film
- channel
- gate electrode
- gate
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 20
- 239000010409 thin film Substances 0.000 title abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 10
- 238000002161 passivation Methods 0.000 description 9
- 238000000206 photolithography Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 4
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 241001239379 Calophysus macropterus Species 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
- 229910016024 MoTa Inorganic materials 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- -1 acryl organic compound Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 210000004027 cell Anatomy 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 210000002858 crystal cell Anatomy 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 206010047571 Visual impairment Diseases 0.000 description 1
- WGCXSIWGFOQDEG-UHFFFAOYSA-N [Zn].[Sn].[In] Chemical compound [Zn].[Sn].[In] WGCXSIWGFOQDEG-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
- 229960001296 zinc oxide Drugs 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims (4)
- 임의의 투명기판 상에 형성된 게이트전극과,상기 투명기판 상에 상기 게이트전극을 덮도록 형성된 게이트절연막과,상기 게이트절연막 상에 형성되며 상기 게이트전극과 대응하는 부분에 형성된 반도체층과,상기 반도체층상에 'ㄹ'자 형태로 형성된 채널과,상기 채널을 사이에 두고 형성된 소스전극 및 드레인전극을 구비하는 것을 특징으로 하는 박막트랜지스터.
- 제 1항에 있어서,상기 게이트 절연막상에 형성되는 활성층과,상기 활성층상에 형성되며 상기 채널과 대응하는 'ㄹ'자 형태의 홀이 형성된 오믹접촉층을 구비하는 것을 특징으로 하는 박막트랜지스터.
- 임의의 투명기판 상에 게이트전극을 형성하는 공정과,상기 투명기판 상에 상기 게이트전극을 덮도록 게이트절연막을 형성하는 공정과,상기 게이트절연막 상에 형성되며 상기 게이트전극과 대응하는 부분에 반도체층을 형성하는 공정과,상기 반도체층상에 'ㄹ'자 형태로 채널을 형성하는 공정과,상기 채널을 사이에 두고 소스전극 및 드레인전극을 형성하는 공정을 포함하는 것을 특징으로 하는 박막트랜지스터의 제조방법.
- 제 3항에 있어서,상기 게이트 절연막상에 활성층을 형성하는 공정과,상기 활성층상에 형성되며 상기 채널과 대응하는 'ㄹ'자 형태의 홀을 오믹접촉층에 형성하는 공정을 구비하는 것을 특징으로 하는 박막트랜지스터의 제조방법.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000087051A KR100776514B1 (ko) | 2000-12-30 | 2000-12-30 | 액정표시장치 및 그 제조방법 |
US09/893,976 US7053408B2 (en) | 2000-12-30 | 2001-06-29 | Liquid crystal display device having enlarged channel region and fabricating method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000087051A KR100776514B1 (ko) | 2000-12-30 | 2000-12-30 | 액정표시장치 및 그 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020058917A true KR20020058917A (ko) | 2002-07-12 |
KR100776514B1 KR100776514B1 (ko) | 2007-11-16 |
Family
ID=19704088
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020000087051A KR100776514B1 (ko) | 2000-12-30 | 2000-12-30 | 액정표시장치 및 그 제조방법 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7053408B2 (ko) |
KR (1) | KR100776514B1 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100475108B1 (ko) * | 2001-12-22 | 2005-03-10 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그 제조 방법 |
US7858451B2 (en) * | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
CN100461432C (zh) * | 2006-11-03 | 2009-02-11 | 北京京东方光电科技有限公司 | 一种薄膜晶体管沟道结构 |
CN100592181C (zh) * | 2007-05-30 | 2010-02-24 | 北京京东方光电科技有限公司 | 一种可修复的像素结构 |
KR102326555B1 (ko) * | 2015-04-29 | 2021-11-17 | 삼성디스플레이 주식회사 | 표시장치 |
CN110098259A (zh) * | 2019-04-10 | 2019-08-06 | 深圳市华星光电技术有限公司 | 非晶硅薄膜晶体管及其制作方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2585167B1 (fr) * | 1985-07-19 | 1993-05-07 | Gen Electric | Structures conductrices redondantes pour affichages a cristaux liquides commandes par des transistors a effet de champ en couche mince |
JP2525615B2 (ja) * | 1987-08-24 | 1996-08-21 | セイコーエプソン株式会社 | トランジスタ |
JPH0224631A (ja) * | 1988-07-13 | 1990-01-26 | Seikosha Co Ltd | 薄膜トランジスタアレイ |
JPH0258030A (ja) * | 1988-08-24 | 1990-02-27 | Hitachi Ltd | 液晶表示装置 |
ATE135496T1 (de) * | 1990-03-27 | 1996-03-15 | Canon Kk | Dünnschicht-halbleiterbauelement |
EP0449585B1 (en) * | 1990-03-27 | 1996-09-18 | Canon Kabushiki Kaisha | Thin film semiconductor device |
JPH0864824A (ja) * | 1994-08-24 | 1996-03-08 | Toshiba Corp | 薄膜トランジスタおよびその製造方法 |
US5777703A (en) * | 1994-09-30 | 1998-07-07 | Sanyo Electric Co., Ltd. | Active matrix type liquid crystal display apparatus with a projection part in the drain line |
JPH09251171A (ja) * | 1996-03-15 | 1997-09-22 | Toshiba Electron Eng Corp | 液晶表示装置およびその製造方法 |
US5789791A (en) * | 1996-08-27 | 1998-08-04 | National Semiconductor Corporation | Multi-finger MOS transistor with reduced gate resistance |
KR100439944B1 (ko) * | 1998-12-10 | 2004-11-03 | 엘지.필립스 엘시디 주식회사 | 박막트랜지스터형광감지센서,센서박막트랜지스터와그제조방법 |
JP2001051294A (ja) * | 1999-08-05 | 2001-02-23 | Internatl Business Mach Corp <Ibm> | 高精細tft液晶表示装置 |
WO2001017029A1 (en) * | 1999-08-31 | 2001-03-08 | E Ink Corporation | Transistor for an electronically driven display |
-
2000
- 2000-12-30 KR KR1020000087051A patent/KR100776514B1/ko active IP Right Grant
-
2001
- 2001-06-29 US US09/893,976 patent/US7053408B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR100776514B1 (ko) | 2007-11-16 |
US20020085139A1 (en) | 2002-07-04 |
US7053408B2 (en) | 2006-05-30 |
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