KR100799465B1 - 액정표시장치 및 그 제조방법 - Google Patents
액정표시장치 및 그 제조방법 Download PDFInfo
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- KR100799465B1 KR100799465B1 KR1020010015745A KR20010015745A KR100799465B1 KR 100799465 B1 KR100799465 B1 KR 100799465B1 KR 1020010015745 A KR1020010015745 A KR 1020010015745A KR 20010015745 A KR20010015745 A KR 20010015745A KR 100799465 B1 KR100799465 B1 KR 100799465B1
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 230000001681 protective effect Effects 0.000 claims abstract description 32
- 230000004888 barrier function Effects 0.000 claims abstract description 29
- 239000010408 film Substances 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 239000004020 conductor Substances 0.000 claims abstract description 11
- 210000002858 crystal cell Anatomy 0.000 claims abstract description 5
- 239000010409 thin film Substances 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 82
- 239000000758 substrate Substances 0.000 claims description 20
- 239000011241 protective layer Substances 0.000 claims description 13
- 238000000059 patterning Methods 0.000 claims description 12
- 239000007769 metal material Substances 0.000 claims description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 239000011733 molybdenum Substances 0.000 claims description 7
- 238000002161 passivation Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 238000000151 deposition Methods 0.000 description 13
- 210000004027 cell Anatomy 0.000 description 8
- 239000011651 chromium Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000011810 insulating material Substances 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- BCCOBQSFUDVTJQ-UHFFFAOYSA-N octafluorocyclobutane Chemical compound FC1(F)C(F)(F)C(F)(F)C1(F)F BCCOBQSFUDVTJQ-UHFFFAOYSA-N 0.000 description 4
- 235000019407 octafluorocyclobutane Nutrition 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- -1 acryl organic compounds Chemical class 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims (9)
- 데이터신호가 공급되는 데이터라인과, 스캔신호가 공급되는 게이트라인과, 액정셀을 구동하기 위한 화소전극과, 상기 스캔신호에 응답하여 상기 데이터신호를 상기 화소전극으로 절환하기 위한 박막트랜지스터를 포함하는 액정표시장치에 있어서,단일금속층으로 이루어지며 상기 데이터라인 및 게이트라인중 적어도 어느 하나의 신호배선에 연결되어 상기 신호배선에 외부로부터의 신호를 공급하는 패드전극과,상기 화소전극과 동일한 투명전도성물질로 이루어지며 상기 패드전극과 전기적으로 접촉되는 보호전극과,상기 보호전극과 동일한 패턴을 가지고, 상기 보호전극과 상기 패드전극 사이에 개재되어 상기 보호전극과 상기 패드전극 사이의 접촉저항을 낮추기 위한 배리어금속층을 구비하는 것을 특징으로 하는 액정표시장치.
- 제 1 항에 있어서,상기 배리어금속층은 몰리브덴(Mo), 텅스텐(W), 티탄(Ti) 중 어느 하나로 형성되는 것을 특징으로 하는 액정표시장치.
- 제 1 항에 있어서,상기 배리어금속층은 상기 화소전극 및 보호전극에 대한 노광 및 식각공정 시에 동시에 패터닝되는 것을 특징으로 하는 액정표시장치.
- 제 1 항에 있어서,상기 패드전극은 상기 게이트라인에서 연장되어 형성되는 것을 특징으로 하는 액정표시장치.
- 제 1 항에 있어서,상기 패드전극은 게이트절연막 및 보호막을 관통하는 접촉홀을 통해 상기 보호전극 및 배리어금속층과 전기적으로 접촉되는 것을 특징으로 하는 액정표시장치.
- 기판 상에 게이트전극 및 패드전극을 형성하는 단계와,상기 게이트전극 및 패드전극을 덮도록 상기 기판 상에 게이트절연막을 전면 형성하는 단계와,상기 게이트전극과 중첩되도록 상기 게이트절연막 상에 반도체층을 형성하는 단계와,소정 크기의 채널을 사이에 두고 상기 반도체층 상에 소스전극 및 드레인전극을 형성하는 단계와,상기 게이트절연막상에 보호막을 전면 형성한 후 패터닝하여 상기 패드전극 및 드레인전극의 위치에 각각 접촉홀을 형성하는 단계와,상기 접촉홀을 통해 상기 패드전극과 전기적으로 접촉되도록 상기 보호막 상에 새도우마스크를 이용하여 배리어금속물질을 형성하는 단계와,상기 보호막 및 상기 배리어금속물질 상에 투명전도성물질을 전면 도포하는 단계와,상기 배리어금속물질과 투명전도성물질을 동시에 패터닝하여 배리어금속층, 보호전극 및 화소전극을 동시에 형성하는 단계를 포함하는 것을 특징으로 하는 액정표시장치의 제조방법.
- 제 6 항에 있어서,상기 게이트전극 및 패드전극은 알루미늄(Al), 알루미늄-네오듐(AlNd) 중 어느 하나로 단층을 이루는 것을 특징으로 하는 액정표시장치의 제조방법.
- 제 7 항에 있어서,상기 게이트절연막은 저온인 300℃보다 낮은 온도에서 형성되는 것을 특징으로 하는 액정표시장치의 제조방법.
- 제 7 항에 있어서,상기 배리어금속층은 몰리브덴(MO), 텅스텐(W), 티탄(Ti) 중 어느 하나로 형성되는 것을 특징으로 하는 액정표시장치의 제조방법.
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KR1020010015745A KR100799465B1 (ko) | 2001-03-26 | 2001-03-26 | 액정표시장치 및 그 제조방법 |
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KR1020010015745A KR100799465B1 (ko) | 2001-03-26 | 2001-03-26 | 액정표시장치 및 그 제조방법 |
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KR100799465B1 true KR100799465B1 (ko) | 2008-02-01 |
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Families Citing this family (2)
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KR101252000B1 (ko) * | 2006-02-07 | 2013-04-08 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR101484022B1 (ko) | 2012-05-31 | 2015-01-19 | 엘지디스플레이 주식회사 | 액정표시장치용 어레이 기판 및 이의 제조 방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09189924A (ja) * | 1995-12-28 | 1997-07-22 | Samsung Electron Co Ltd | 液晶表示装置の製造方法 |
KR19990023709A (ko) * | 1997-08-22 | 1999-03-25 | 아베 아키라 | 박막트랜지스터형 액정표시장치 및 그 제조방법 |
KR20000022732A (ko) * | 1998-09-02 | 2000-04-25 | 아베 아키라 | 저저항 배선으로써 알루미늄을 이용한 박막트랜지스터기판 및그것을 이용한 액정표시장치 |
KR20010019666A (ko) * | 1999-08-30 | 2001-03-15 | 윤종용 | 박막트랜지스터 액정표시장치 |
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- 2001-03-26 KR KR1020010015745A patent/KR100799465B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09189924A (ja) * | 1995-12-28 | 1997-07-22 | Samsung Electron Co Ltd | 液晶表示装置の製造方法 |
KR19990023709A (ko) * | 1997-08-22 | 1999-03-25 | 아베 아키라 | 박막트랜지스터형 액정표시장치 및 그 제조방법 |
KR20000022732A (ko) * | 1998-09-02 | 2000-04-25 | 아베 아키라 | 저저항 배선으로써 알루미늄을 이용한 박막트랜지스터기판 및그것을 이용한 액정표시장치 |
KR20010019666A (ko) * | 1999-08-30 | 2001-03-15 | 윤종용 | 박막트랜지스터 액정표시장치 |
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