KR20020021412A - 전계 이미터 및 디바이스 - Google Patents
전계 이미터 및 디바이스 Download PDFInfo
- Publication number
- KR20020021412A KR20020021412A KR1020027002254A KR20027002254A KR20020021412A KR 20020021412 A KR20020021412 A KR 20020021412A KR 1020027002254 A KR1020027002254 A KR 1020027002254A KR 20027002254 A KR20027002254 A KR 20027002254A KR 20020021412 A KR20020021412 A KR 20020021412A
- Authority
- KR
- South Korea
- Prior art keywords
- emitter
- particles
- field electron
- electrode structure
- electron emission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000002245 particle Substances 0.000 claims abstract description 83
- 230000000873 masking effect Effects 0.000 claims abstract description 14
- 238000001962 electrophoresis Methods 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 88
- 230000008569 process Effects 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 18
- 239000002243 precursor Substances 0.000 claims description 17
- 239000012777 electrically insulating material Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 230000005684 electric field Effects 0.000 claims description 10
- 239000007788 liquid Substances 0.000 claims description 8
- 239000011810 insulating material Substances 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 7
- 238000003491 array Methods 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 6
- 239000006185 dispersion Substances 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 239000007921 spray Substances 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 239000012707 chemical precursor Substances 0.000 claims description 4
- 238000001246 colloidal dispersion Methods 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 4
- 229910002804 graphite Inorganic materials 0.000 claims description 4
- 239000010439 graphite Substances 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- 238000012545 processing Methods 0.000 claims description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- 239000010419 fine particle Substances 0.000 claims description 3
- 230000009471 action Effects 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims description 2
- 238000005286 illumination Methods 0.000 claims description 2
- 239000000615 nonconductor Substances 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 230000037452 priming Effects 0.000 claims description 2
- 238000010292 electrical insulation Methods 0.000 claims 1
- 238000005401 electroluminescence Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 50
- 239000012212 insulator Substances 0.000 description 29
- 239000000725 suspension Substances 0.000 description 9
- 239000010432 diamond Substances 0.000 description 8
- 239000011521 glass Substances 0.000 description 8
- 239000000976 ink Substances 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 229910003460 diamond Inorganic materials 0.000 description 7
- 238000013459 approach Methods 0.000 description 6
- 239000000499 gel Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 241001428800 Cell fusing agent virus Species 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 208000036971 interstitial lung disease 2 Diseases 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 230000001954 sterilising effect Effects 0.000 description 2
- 238000004659 sterilization and disinfection Methods 0.000 description 2
- 230000001960 triggered effect Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000001652 electrophoretic deposition Methods 0.000 description 1
- 238000004924 electrostatic deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J63/00—Cathode-ray or electron-stream lamps
- H01J63/06—Lamps with luminescent screen excited by the ray or stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
- H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
- H01J31/126—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using line sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
- H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
- H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Cold Cathode And The Manufacture (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9919737.8 | 1999-08-21 | ||
| GBGB9919737.8A GB9919737D0 (en) | 1999-08-21 | 1999-08-21 | Field emitters and devices |
| PCT/GB2000/003242 WO2001015194A1 (en) | 1999-08-21 | 2000-08-21 | Field emitters and devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20020021412A true KR20020021412A (ko) | 2002-03-20 |
Family
ID=10859503
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020027002254A Withdrawn KR20020021412A (ko) | 1999-08-21 | 2000-08-21 | 전계 이미터 및 디바이스 |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US6840835B1 (https=) |
| EP (1) | EP1212776A1 (https=) |
| JP (1) | JP2003507873A (https=) |
| KR (1) | KR20020021412A (https=) |
| CN (1) | CN100342473C (https=) |
| AU (1) | AU6710900A (https=) |
| CA (1) | CA2382051A1 (https=) |
| GB (2) | GB9919737D0 (https=) |
| WO (1) | WO2001015194A1 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3535871B2 (ja) * | 2002-06-13 | 2004-06-07 | キヤノン株式会社 | 電子放出素子、電子源、画像表示装置及び電子放出素子の製造方法 |
| US20040245224A1 (en) * | 2003-05-09 | 2004-12-09 | Nano-Proprietary, Inc. | Nanospot welder and method |
| JP4154356B2 (ja) | 2003-06-11 | 2008-09-24 | キヤノン株式会社 | 電子放出素子、電子源、画像表示装置及びテレビ |
| KR101224257B1 (ko) | 2004-11-18 | 2013-01-18 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 마이크로니들 어레이를 코팅하기 위한 마스킹 방법 |
| JP4667031B2 (ja) * | 2004-12-10 | 2011-04-06 | キヤノン株式会社 | 電子放出素子の製造方法、および該製造方法を用いた、電子源並びに画像表示装置の製造方法 |
| US7504272B2 (en) * | 2006-11-06 | 2009-03-17 | Stanley Electric Co., Ltd. | Method for producing color-converting light-emitting device using electrophoresis |
| ES2393053T3 (es) | 2008-06-02 | 2012-12-18 | Pst Sensors (Pty) Limited | Impresión por inyección de tinta de tintas funcionales de nanopartículas |
| US20140029728A1 (en) * | 2011-04-04 | 2014-01-30 | Vsi Co., Ltd. | High-Efficiency Flat Type Photo Bar Using Field Emitter and Manufacturing Method Thereof |
| CN106252278B (zh) * | 2016-09-14 | 2018-12-07 | 河南大学 | 金属氧化物薄膜晶体管阵列的制备方法 |
| CN109521511B (zh) * | 2017-09-18 | 2021-01-26 | 京东方科技集团股份有限公司 | 微结构的制作方法、光调制器件、背光源、显示装置 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB772449A (en) * | 1954-05-14 | 1957-04-10 | Chemelex Corp | Improvements in heat-resistant electrically conducting coatings |
| US3179544A (en) * | 1962-05-02 | 1965-04-20 | Chemelex Inc | Electrically conductive coated article with stable electrical resistance and method for producing same |
| GB1473850A (en) * | 1974-07-03 | 1977-05-18 | Mullard Ltd | Manufacturing electrical glow-discharge display devices |
| DE3752249T2 (de) * | 1986-07-04 | 1999-07-08 | Canon K.K., Tokio/Tokyo | Elektronen emittierende Vorrichtung |
| EP0299461B1 (en) * | 1987-07-15 | 1995-05-10 | Canon Kabushiki Kaisha | Electron-emitting device |
| KR100314830B1 (ko) * | 1994-07-27 | 2002-02-28 | 김순택 | 전계방출표시장치의제조방법 |
| US5637950A (en) * | 1994-10-31 | 1997-06-10 | Lucent Technologies Inc. | Field emission devices employing enhanced diamond field emitters |
| FR2726688B1 (fr) * | 1994-11-08 | 1996-12-06 | Commissariat Energie Atomique | Source d'electrons a effet de champ et procede de fabrication de cette source, application aux dispositifs de visualisation par cathodoluminescence |
| CN1103110C (zh) * | 1995-08-04 | 2003-03-12 | 可印刷发射体有限公司 | 场电子发射材料和装置 |
| JP3229223B2 (ja) * | 1995-10-13 | 2001-11-19 | キヤノン株式会社 | 電子放出素子、電子源及び画像形成装置の製造法並びに電子放出素子製造用金属組成物 |
| JP3836539B2 (ja) * | 1996-07-12 | 2006-10-25 | 双葉電子工業株式会社 | 電界放出素子およびその製造方法 |
| JPH1050204A (ja) * | 1996-08-06 | 1998-02-20 | Dainippon Printing Co Ltd | 電子放出素子とその電極形成方法およびそれに使用するレジスト材料 |
| EP0977235A4 (en) * | 1997-04-09 | 2001-01-31 | Matsushita Electric Industrial Co Ltd | ELECTRON-EMITTING DEVICE AND PRODUCTION METHOD DAFUR |
| JPH11213866A (ja) * | 1998-01-22 | 1999-08-06 | Sony Corp | 電子放出装置及びその製造方法並びにこれを用いた表示装置 |
| JPH11329217A (ja) * | 1998-05-15 | 1999-11-30 | Sony Corp | 電界放出型カソードの製造方法 |
| US6504291B1 (en) * | 1999-02-23 | 2003-01-07 | Micron Technology, Inc. | Focusing electrode and method for field emission displays |
| JP3595718B2 (ja) * | 1999-03-15 | 2004-12-02 | 株式会社東芝 | 表示素子およびその製造方法 |
| TW472273B (en) * | 1999-04-23 | 2002-01-11 | Matsushita Electric Works Ltd | Field emission-type electron source and manufacturing method thereof |
-
1999
- 1999-08-21 GB GBGB9919737.8A patent/GB9919737D0/en not_active Ceased
-
2000
- 2000-08-21 KR KR1020027002254A patent/KR20020021412A/ko not_active Withdrawn
- 2000-08-21 CN CNB008147132A patent/CN100342473C/zh not_active Expired - Fee Related
- 2000-08-21 CA CA002382051A patent/CA2382051A1/en not_active Abandoned
- 2000-08-21 WO PCT/GB2000/003242 patent/WO2001015194A1/en not_active Ceased
- 2000-08-21 US US10/049,885 patent/US6840835B1/en not_active Expired - Fee Related
- 2000-08-21 JP JP2001519461A patent/JP2003507873A/ja active Pending
- 2000-08-21 GB GB0020511A patent/GB2355338B/en not_active Expired - Fee Related
- 2000-08-21 EP EP00954752A patent/EP1212776A1/en not_active Withdrawn
- 2000-08-21 AU AU67109/00A patent/AU6710900A/en not_active Abandoned
-
2004
- 2004-04-23 US US10/831,731 patent/US20040198132A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| CA2382051A1 (en) | 2001-03-01 |
| GB2355338A (en) | 2001-04-18 |
| EP1212776A1 (en) | 2002-06-12 |
| US20040198132A1 (en) | 2004-10-07 |
| US6840835B1 (en) | 2005-01-11 |
| JP2003507873A (ja) | 2003-02-25 |
| GB9919737D0 (en) | 1999-10-20 |
| GB0020511D0 (en) | 2000-10-11 |
| WO2001015194A1 (en) | 2001-03-01 |
| GB2355338B (en) | 2001-11-07 |
| CN1382300A (zh) | 2002-11-27 |
| CN100342473C (zh) | 2007-10-10 |
| AU6710900A (en) | 2001-03-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20020221 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |