KR20020002911A - 반도체소자의 금속배선 형성방법 - Google Patents
반도체소자의 금속배선 형성방법 Download PDFInfo
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- KR20020002911A KR20020002911A KR1020000037275A KR20000037275A KR20020002911A KR 20020002911 A KR20020002911 A KR 20020002911A KR 1020000037275 A KR1020000037275 A KR 1020000037275A KR 20000037275 A KR20000037275 A KR 20000037275A KR 20020002911 A KR20020002911 A KR 20020002911A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02131—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/7685—Barrier, adhesion or liner layers the layer covering a conductive structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Abstract
Description
Claims (6)
- 반도체기판 위에 형성된 ILD층에 비아 및 트랜치를 형성하는 단계;탈가스 공정과 전자 빔 처리공정을 진행하여 상기 ILD층의 상부와 상기 비아 및 트랜치의 일부분에 질화막을 형성하는 단계;고주파 스퍼터링에 의한 세정공정을 실시하는 단계;접착층 및 베리어 역할을 하는 메탈층을 상기 질화막이 형성된 구조물 전면에 형성하는 단계;상기 메탈층 위에 구리를 매립한 후, 구리 플러그 및 배선부분을 제외한 나머지 부분을 제거하여 평탄화하는 단계; 및상기 구리 플러그 및 배선부분이 형성된 구조물 전면에 캡핑층을 형성하는 단계로 구성되는 반도체소자의 금속배선 형성방법.
- 제1항에 있어서, 상기 ILD층은하부 FSG막, SiN막 그리고 상부 FSG막을 순차적으로 PECVD 방법으로 형성되는 것을 특징으로 하는 반도체소자의 금속배선 형성방법.
- 제1항에 있어서, 상기 질화막은웨이퍼를 300℃~500℃에서 10분 이내로 유지하여 탈가스시킨 후 N2의 분위기에서 전자 빔 처리하여, 상기 ILD층 중에서 하부 FSG막 및 상부 FSG막의 노출된 표면을 질화시켜 형성되는 것을 특징으로 하는 반도체소자의 금속배선 형성방법.
- 제1항에 있어서, 상기 메탈층은TaN막을 스퍼터링 방법으로 300Å~1000Å의 두께로 증착하여 형성되는 것을 특징으로 하는 반도체소자의 금속배선 형성방법.
- 제1항에 있어서, 상기 구리를 매립하는 공정은무전해도금, 전해도금, 스퍼터링, CVD 방법 중에서 선택된 하나이고, 구리 전해도금을 이할할 경우에는 구리시드층을 100Å~1000Å의 두께로 상기 메탈층 위에 미리 증착하는 것을 특징으로 하는 반도체소자의 금속배선 형성방법.
- 제1항에 있어서, 상기 캡핑층은 SiN으로 이루어진 것을 특징으로 하는 반도체소자의 금속배선 형성방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020000037275A KR100623332B1 (ko) | 2000-06-30 | 2000-06-30 | 반도체소자의 금속배선 형성방법 |
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Application Number | Priority Date | Filing Date | Title |
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KR1020000037275A KR100623332B1 (ko) | 2000-06-30 | 2000-06-30 | 반도체소자의 금속배선 형성방법 |
Publications (2)
Publication Number | Publication Date |
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KR20020002911A true KR20020002911A (ko) | 2002-01-10 |
KR100623332B1 KR100623332B1 (ko) | 2006-09-11 |
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KR1020000037275A KR100623332B1 (ko) | 2000-06-30 | 2000-06-30 | 반도체소자의 금속배선 형성방법 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100861837B1 (ko) * | 2006-12-28 | 2008-10-07 | 동부일렉트로닉스 주식회사 | 반도체 소자의 금속배선 형성방법 |
KR100929732B1 (ko) * | 2007-12-24 | 2009-12-03 | 주식회사 동부하이텍 | 반도체 소자의 배선 제조방법 |
KR100977947B1 (ko) * | 2002-05-21 | 2010-08-24 | 에이저 시스템즈 인크 | 반도체 장치 및 반도체 장치 제조 공정 |
KR101036159B1 (ko) * | 2003-11-20 | 2011-05-23 | 매그나칩 반도체 유한회사 | 듀얼 다마신 방법을 이용한 금속 배선 형성 방법 |
-
2000
- 2000-06-30 KR KR1020000037275A patent/KR100623332B1/ko active IP Right Grant
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100977947B1 (ko) * | 2002-05-21 | 2010-08-24 | 에이저 시스템즈 인크 | 반도체 장치 및 반도체 장치 제조 공정 |
KR101036159B1 (ko) * | 2003-11-20 | 2011-05-23 | 매그나칩 반도체 유한회사 | 듀얼 다마신 방법을 이용한 금속 배선 형성 방법 |
KR100861837B1 (ko) * | 2006-12-28 | 2008-10-07 | 동부일렉트로닉스 주식회사 | 반도체 소자의 금속배선 형성방법 |
KR100929732B1 (ko) * | 2007-12-24 | 2009-12-03 | 주식회사 동부하이텍 | 반도체 소자의 배선 제조방법 |
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KR100623332B1 (ko) | 2006-09-11 |
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