KR20010058580A - 반도체패키지 및 그 제조방법 - Google Patents
반도체패키지 및 그 제조방법 Download PDFInfo
- Publication number
- KR20010058580A KR20010058580A KR1019990065930A KR19990065930A KR20010058580A KR 20010058580 A KR20010058580 A KR 20010058580A KR 1019990065930 A KR1019990065930 A KR 1019990065930A KR 19990065930 A KR19990065930 A KR 19990065930A KR 20010058580 A KR20010058580 A KR 20010058580A
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- Prior art keywords
- circuit board
- semiconductor chip
- input
- semiconductor
- circuit
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Combinations Of Printed Boards (AREA)
Abstract
Description
Claims (7)
- 상,하로 대향하는 면에 다수의 입출력패드가 형성된 동시에, 상기 입출력패드중 특정 입출력패드는 도전성범프에 의해 상호 접속되어 있는 다수의 반도체칩과;상기 반도체칩의 입출력패드가 형성된 면의 반대면에 각각 접착되어 있으며, 상기 반도체칩의 입출력패드가 형성된 면을 향하는 표면에는 본드핑거를, 그 반대면에는 볼랜드를 포함하는 회로패턴이 형성된 다수의 회로기판과;상기 각 반도체칩의 특정 입출력패드와 상기 각 회로기판의 본드핑거를 접속하는 다수의 도전성와이어와;상기 반도체칩의 상,하면에 각각 접착된 회로기판 사이에 충진된 봉지재와;상기 회로기판중 적어도 하나의 회로기판에 형성된 볼랜드에 융착된 다수의 도전성볼을 포함하여 이루어진 것을 특징으로 하는 반도체패키지.
- 제1항에 있어서, 상기 반도체패키지는 상,하로 적어도 2개 이상이 적층되어 이루어진 것을 특징으로 하는 반도체패키지.
- 제2항에 있어서, 상기 반도체패키지는 첫 번째 반도체패키지의 어느 한 회로기판에 형성된 도전성볼이 두 번째 반도체패키지의 어느 한 회로기판의 볼랜드에 융착되어 상호 적층된 것을 특징으로 하는 반도체패키지.
- 제1항에 있어서, 상기 회로기판은 수지층을 중심으로 상,하면에 본드핑거, 볼랜드 등의 회로패턴이 형성되고, 상,하면의 회로패턴은 도전성비아홀로 서로 연결된 인쇄회로기판인 것을 특징으로 하는 반도체패키지.
- 제1항에 있어서, 상기 회로기판은 가요성 필름 또는 가요성 테이프에 본드핑거, 볼랜드 등의 회로패턴이 형성된 써킷필름 또는 써킷테이프인 것을 특징으로 하는 반도체패키지.
- 상면에 다수의 입출력패드가 구비된 제1반도체칩과;하면에 다수의 입출력패드가 구비된 제2반도체칩과;상기 제1반도체칩 및 제2반도체칩의 특정한 입출력패드를 상호 전기적으로 접속하는 도전성범프와;상기 제1반도체칩의 하면에 접착되어 있으며, 상면에는 본드핑거를, 하면에는 볼랜드를 포함하는 회로패턴이 형성된 제1회로기판과;상기 제1반도체칩의 특정 입출력패드와 상기 제1회로기판의 본드핑거를 전기적으로 접속하는 제1도전성와이어와;상기 제2반도체칩의 상면에 위치되어 있으며, 상면에는 볼랜드를, 하면에는 본드핑거를 포함하는 회로패턴이 형성된 제2회로기판과;상기 제2반도체칩의 특정 입출력패드와 상기 제2회로기판의 본드핑거를 접속하는 제2도전성와이어와;상기 제1회로기판과 제2회로기판 사이에 충진된 봉지재와;상기 제1회로기판의 각 볼랜드에 융착된 다수의 도전성볼을 포함하여 이루어진 반도체패키지.
- 일면에는 본드핑거를, 타면에는 볼랜드를 포함하는 회로패턴이 형성된 2개의 회로기판을 제공하고, 상기 각 회로기판의 볼랜드가 형성된 면에 반도체칩을 접착하는 단계와;상기 반도체칩중 어느 하나에는 특정 입출력패드에 도전성범프를 형성하고, 다른 입출력패드는 어느 한 회로기판의 본드핑거에 도전성와이어를 이용하여 접속하고, 또한 다른 회로기판에 접착된 반도체칩의 입출력패드는 그 회로기판의 본드핑거에 도전성와이어를 이용하여 접속하는 단계와;상기 각 회로기판에 접착된 반도체칩을 상기 도전성범프를 이용하여 상호 접속시키는 단계와;상기 각 회로기판 사이에 봉지재를 충진하는 단계와;상기 회로기판중 어느 한 회로기판의 볼랜드에 도전성볼을 융착하는 단계를 포함하여 이루어진 반도체패키지의 제조 방법.
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KR10-1999-0065930A KR100401019B1 (ko) | 1999-12-30 | 1999-12-30 | 반도체패키지 및 그 제조방법 |
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KR10-1999-0065930A KR100401019B1 (ko) | 1999-12-30 | 1999-12-30 | 반도체패키지 및 그 제조방법 |
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KR20010058580A true KR20010058580A (ko) | 2001-07-06 |
KR100401019B1 KR100401019B1 (ko) | 2003-10-08 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100425766B1 (ko) * | 2001-06-28 | 2004-04-03 | 동부전자 주식회사 | 반도체 패키지 및 그 제조 방법 |
KR100808582B1 (ko) * | 2001-12-29 | 2008-02-29 | 주식회사 하이닉스반도체 | 칩 적층 패키지 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5438224A (en) * | 1992-04-23 | 1995-08-01 | Motorola, Inc. | Integrated circuit package having a face-to-face IC chip arrangement |
US5801072A (en) * | 1996-03-14 | 1998-09-01 | Lsi Logic Corporation | Method of packaging integrated circuits |
US5760478A (en) * | 1996-08-20 | 1998-06-02 | International Business Machines Corporation | Clock skew minimization system and method for integrated circuits |
JPH10294423A (ja) * | 1997-04-17 | 1998-11-04 | Nec Corp | 半導体装置 |
KR19990024255U (ko) * | 1997-12-12 | 1999-07-05 | 김영환 | 적층형 볼 그리드 어레이 패키지 |
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1999
- 1999-12-30 KR KR10-1999-0065930A patent/KR100401019B1/ko active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100425766B1 (ko) * | 2001-06-28 | 2004-04-03 | 동부전자 주식회사 | 반도체 패키지 및 그 제조 방법 |
KR100808582B1 (ko) * | 2001-12-29 | 2008-02-29 | 주식회사 하이닉스반도체 | 칩 적층 패키지 |
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