KR20010053245A - 진공 처리 방법 및 장치 - Google Patents
진공 처리 방법 및 장치 Download PDFInfo
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- KR20010053245A KR20010053245A KR1020007014910A KR20007014910A KR20010053245A KR 20010053245 A KR20010053245 A KR 20010053245A KR 1020007014910 A KR1020007014910 A KR 1020007014910A KR 20007014910 A KR20007014910 A KR 20007014910A KR 20010053245 A KR20010053245 A KR 20010053245A
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- Prior art keywords
- gas
- pressure
- mounting table
- wafer
- flow rate
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
- C23C16/466—Cooling of the substrate using thermal contact gas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (7)
- 정전 척 상에 적재된 피처리물에 대하여, 피처리물과 정전 척 사이에서 열 전달을 행하는 열전도 가스를 공급하여, 소정의 처리를 실시하는 진공 처리 방법으로서,상기 열전도 가스를 공급할 시, 이 열전도 가스 유량을 측정하는 단계와,이 측정치에 기초하여, 상기 피처리물의 적재 상태의 이상 유무를 판별하는 단계를 포함하는 것을 특징으로 하는 진공 처리 방법.
- 피처리물을 진공 처리하는 진공 처리 용기와,진공 처리 용기 내에 설치되고, 또한 피처리물을 적재하는 표면을 갖는 적재대와,이 적재대의 표면에 적재된 피처리물을 소정 온도로 유지하기 위해서, 피처리물과 상기 표면 사이에 형성되는 간극에 열전도용 가스를 공급하도록 상기 표면에 형성된 열전도용 가스 분출 구멍과,상기 가스 분출 구멍에 열전도용 가스를 공급하기 위한 가스 공급로와,이 가스 공급로에 접속된 열전도용 가스 공급원과,상기 가스 공급로 내에서 열전도용 가스 압력을 조정하기 위해서 상기 가스 공급로에 설치된 압력 조정부와,상기 가스 공급로에 있어서 상기 압력 조정부의 하류측에 설치되고, 또한 열전도용 가스의 상기 가스 분출 구멍을 향하는 유량을 측정하는 유량계와,상기 피처리물과 적재대의 표면 사이에서 정상 상태로 열전도용 가스가 누출될 때 상기 유량계가 측정하는 유량치에 대응하는 유량 임계치와 상기 유량계의 유량 측정치를 비교하여, 유량 측정치가 상기 유량 임계치를 초과할 경우 검출 신호를 출력하는 비교 수단을 구비하는 것을 특징으로 하는 진공 처리 장치.
- 제2항에 있어서, 상기 피처리물을 적재대의 표면에 압박하기 위한 압박 수단을 더 구비하는 것을 특징으로 하는 진공 처리 장치.
- 제2항에 있어서, 상기 적재대는 유전체에 의해 구성되고, 상기 압박 수단은 상기 적재대의 표면 근방에 설치된 정전 흡착용 전극을 포함하는 정전 척인 것을 특징으로 하는 진공 처리 장치.
- 제2항에 있어서, 상기 가스 공급로의 가스가 1 내지 20 Torr 중에서 선택된 설정 압력치를 갖도록 상기 압력 조정부가 조정되어 있는 것을 특징으로 하는 진공 처리 장치.
- 제2항에 있어서, 상기 적재대의 표면은 경면 마무리 처리되고, 상기 압박 수단은 피처리물을 적재대의 표면에 대하여 500 g/cm2 이상의 압력으로 압박하도록 설정되어 있는 것을 특징으로 하는 진공 처리 장치.
- 제2항에 있어서, 상기 압력 조정부는 가스 공급로의 압력을 검출하는 압력계와, 이 압력계에서의 검출 압력치와 설정 압력치를 비교하여 출력 신호를 내는 압력 컨트롤러와, 압력 컨트롤러의 출력 신호에 의해 제어되는 압력 조정 밸브로 이루어지는 것을 특징으로 하는 진공 처리 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10201285A JP2000021869A (ja) | 1998-06-30 | 1998-06-30 | 真空処理装置 |
JP98-201285 | 1998-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010053245A true KR20010053245A (ko) | 2001-06-25 |
KR100407054B1 KR100407054B1 (ko) | 2003-11-28 |
Family
ID=16438447
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2000-7014910A KR100407054B1 (ko) | 1998-06-30 | 1999-06-28 | 진공 처리 방법 및 장치 |
Country Status (7)
Country | Link |
---|---|
US (1) | US6401359B1 (ko) |
EP (1) | EP1115146B1 (ko) |
JP (1) | JP2000021869A (ko) |
KR (1) | KR100407054B1 (ko) |
DE (1) | DE69937304T2 (ko) |
TW (1) | TW419744B (ko) |
WO (1) | WO2000001002A1 (ko) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6562079B1 (en) * | 1998-07-13 | 2003-05-13 | Toshiyuki Takamatsu | Microwave discharge apparatus |
US6913670B2 (en) | 2002-04-08 | 2005-07-05 | Applied Materials, Inc. | Substrate support having barrier capable of detecting fluid leakage |
TWI275913B (en) * | 2003-02-12 | 2007-03-11 | Asml Netherlands Bv | Lithographic apparatus and method to detect correct clamping of an object |
JP4519037B2 (ja) * | 2005-08-31 | 2010-08-04 | 東京エレクトロン株式会社 | 加熱装置及び塗布、現像装置 |
JP2008072030A (ja) * | 2006-09-15 | 2008-03-27 | Matsushita Electric Ind Co Ltd | プラズマ処理装置、プラズマ処理装置の異常検出方法、及びプラズマ処理方法 |
CN101226871B (zh) * | 2007-01-15 | 2010-07-21 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 硅片脱附的方法 |
US20110079288A1 (en) * | 2009-10-01 | 2011-04-07 | Bruker Biospin Corporation | Method and apparatus for preventing energy leakage from electrical transmission lines |
US20150107618A1 (en) * | 2013-10-21 | 2015-04-23 | Applied Materials, Inc. | Oxygen containing plasma cleaning to remove contamination from electronic device components |
US9508578B2 (en) | 2014-02-04 | 2016-11-29 | Globalfoundries Inc. | Method and apparatus for detecting foreign material on a chuck |
CN104867858A (zh) * | 2014-02-21 | 2015-08-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 晶片提升方法 |
EP3392512A1 (de) | 2017-04-19 | 2018-10-24 | HILTI Aktiengesellschaft | Befestigungsverfahren und befestigungssystem |
JP2019054061A (ja) * | 2017-09-13 | 2019-04-04 | 東芝メモリ株式会社 | 半導体製造装置およびウェハ保持方法 |
CN110767568B (zh) * | 2018-07-26 | 2022-05-27 | 北京北方华创微电子装备有限公司 | 压力调节组件、下电极装置、工艺腔室和半导体处理设备 |
JP7273660B2 (ja) * | 2019-08-30 | 2023-05-15 | キオクシア株式会社 | 半導体製造装置、および半導体装置の製造方法 |
JP7446181B2 (ja) * | 2020-08-20 | 2024-03-08 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
WO2022237975A1 (en) * | 2021-05-12 | 2022-11-17 | Applied Materials, Inc. | Method of substrate checking, and substrate processing system |
CN116994999B (zh) * | 2023-09-26 | 2023-12-12 | 泓浒(苏州)半导体科技有限公司 | 一种超洁净环境的机械臂吸力调节方法及系统 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0246453A3 (en) * | 1986-04-18 | 1989-09-06 | General Signal Corporation | Novel multiple-processing and contamination-free plasma etching system |
KR970003885B1 (ko) * | 1987-12-25 | 1997-03-22 | 도오교오 에레구토론 가부시끼 가이샤 | 에칭 방법 및 그 장치 |
JP2613296B2 (ja) * | 1989-09-20 | 1997-05-21 | 株式会社日立製作所 | 真空処理方法及び装置 |
JPH04359539A (ja) * | 1991-06-06 | 1992-12-11 | Fujitsu Ltd | 静電吸着装置 |
JP3086970B2 (ja) * | 1991-07-03 | 2000-09-11 | 東京エレクトロン株式会社 | 基板処理装置 |
US5539609A (en) * | 1992-12-02 | 1996-07-23 | Applied Materials, Inc. | Electrostatic chuck usable in high density plasma |
US5684669A (en) * | 1995-06-07 | 1997-11-04 | Applied Materials, Inc. | Method for dechucking a workpiece from an electrostatic chuck |
TW277139B (ko) * | 1993-09-16 | 1996-06-01 | Hitachi Seisakusyo Kk | |
JP2626539B2 (ja) * | 1993-12-15 | 1997-07-02 | 日本電気株式会社 | 静電吸着装置 |
US5491603A (en) * | 1994-04-28 | 1996-02-13 | Applied Materials, Inc. | Method of determining a dechucking voltage which nullifies a residual electrostatic force between an electrostatic chuck and a wafer |
JP3294023B2 (ja) * | 1994-11-17 | 2002-06-17 | 大日本スクリーン製造株式会社 | 基板処理装置 |
KR0160382B1 (ko) * | 1995-12-13 | 1999-02-01 | 김광호 | 반도체 제조시스템의 가스 및 전력 이상공급 경보장치 |
JPH09172055A (ja) * | 1995-12-19 | 1997-06-30 | Fujitsu Ltd | 静電チャック及びウエハの吸着方法 |
JPH10240356A (ja) * | 1997-02-21 | 1998-09-11 | Anelva Corp | 基板処理装置の基板温度制御法と基板温度制御性判定法 |
-
1998
- 1998-06-30 JP JP10201285A patent/JP2000021869A/ja active Pending
-
1999
- 1999-06-28 EP EP99957660A patent/EP1115146B1/en not_active Expired - Lifetime
- 1999-06-28 KR KR10-2000-7014910A patent/KR100407054B1/ko not_active IP Right Cessation
- 1999-06-28 WO PCT/JP1999/003441 patent/WO2000001002A1/ja active IP Right Grant
- 1999-06-28 DE DE69937304T patent/DE69937304T2/de not_active Expired - Lifetime
- 1999-06-29 TW TW088111003A patent/TW419744B/zh not_active IP Right Cessation
-
2000
- 2000-09-05 US US09/655,375 patent/US6401359B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO2000001002A1 (fr) | 2000-01-06 |
TW419744B (en) | 2001-01-21 |
EP1115146A1 (en) | 2001-07-11 |
DE69937304T2 (de) | 2008-11-27 |
EP1115146B1 (en) | 2007-10-10 |
US6401359B1 (en) | 2002-06-11 |
EP1115146A4 (en) | 2005-02-02 |
DE69937304D1 (de) | 2007-11-22 |
KR100407054B1 (ko) | 2003-11-28 |
JP2000021869A (ja) | 2000-01-21 |
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