JP2019054061A - 半導体製造装置およびウェハ保持方法 - Google Patents
半導体製造装置およびウェハ保持方法 Download PDFInfo
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- JP2019054061A JP2019054061A JP2017176076A JP2017176076A JP2019054061A JP 2019054061 A JP2019054061 A JP 2019054061A JP 2017176076 A JP2017176076 A JP 2017176076A JP 2017176076 A JP2017176076 A JP 2017176076A JP 2019054061 A JP2019054061 A JP 2019054061A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Abstract
Description
図1は、第1実施形態の半導体製造装置の構成を模式的に示す断面図である。
12a:絶縁部、12b:電極板、12c:ベース部、
12d:第1ガス導入溝、12e:第2ガス導入溝、12f:ガス排出溝、
13:ガス供給源、14:ガス導入配管、15:ガス導入弁、
16:真空ポンプ、17:ガス排出配管、18:ガス排出弁、
19:電源、20:スイッチ、21:第1フローメータ、22:第1圧力計、
23:第2フローメータ、24:第2圧力計、25:情報処理部、25a:表示部
Claims (8)
- ウェハを保持し、前記ウェハにガス供給源からのガスを供給する静電チャックステージであって、前記ウェハの中心から第1距離に位置する第1部分に前記ガスを供給する第1開口部と、前記ウェハの中心から前記第1距離よりも遠い第2距離に位置する第2部分に前記ガスを供給する第2開口部と、を備える静電チャックステージと、
前記ガス供給源と前記第1開口部との間で前記ガスの物理量を計測する第1計測器と、
前記ガス供給源と前記第2開口部との間で前記ガスの物理量を計測する第2計測器と、
前記第1計測器により計測された前記物理量と、前記第2計測器により計測された前記物理量とに基づいて、前記ウェハに関する情報を出力する出力部と、
を備える半導体製造装置。 - 前記第1および第2計測器は、前記ガスの流量および圧力を計測する、請求項1に記載の半導体製造装置。
- 前記出力部は、前記ウェハの反りに関する情報を出力する、請求項1または2に記載の半導体製造装置。
- 前記出力部は、前記ウェハに関する警報を出力する、請求項1から3のいずれか1項に記載の半導体製造装置。
- 前記第1開口部は、環状の形状を有し、
前記第2開口部は、前記第1開口部を包囲する環状の形状を有する、
請求項1から4のいずれか1項に記載の半導体製造装置。 - 前記静電チャックステージは、前記ウェハの中心から前記第1距離と前記第2距離との間の第3距離に位置する第3部分に前記ガスを供給する1つ以上の第3開口部をさらに備える、請求項1から5のいずれか1項に記載の半導体製造装置。
- 前記静電チャックステージは、前記第1開口部と前記第2開口部との間に設けられ、前記ウェハに供給された前記ガスを排出する開口部をさらに備える、請求項1から6のいずれか1項に記載の半導体製造装置。
- ガス供給源からガスを供給し、
ウェハの中心から第1距離に位置する第1部分に前記ガスを供給する第1開口部と、前記ウェハの中心から前記第1距離よりも遠い第2距離に位置する第2部分に前記ガスを供給する第2開口部と、を備える静電チャックステージにより前記ウェハを保持し、
第1計測器が前記ガス供給源と前記第1開口部との間で前記ガスの物理量を計測し、
第2計測器が前記ガス供給源と前記第2開口部との間で前記ガスの物理量を計測し、
前記第1計測器により計測された前記物理量と、前記第2計測器により計測された前記物理量とに基づいて、前記ウェハに関する情報を出力部から出力する、
ことを含むウェハ保持方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017176076A JP2019054061A (ja) | 2017-09-13 | 2017-09-13 | 半導体製造装置およびウェハ保持方法 |
US15/907,133 US10438830B2 (en) | 2017-09-13 | 2018-02-27 | Semiconductor manufacturing apparatus and wafer holding method |
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JP2017176076A JP2019054061A (ja) | 2017-09-13 | 2017-09-13 | 半導体製造装置およびウェハ保持方法 |
Publications (1)
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JP2019054061A true JP2019054061A (ja) | 2019-04-04 |
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JP2017176076A Pending JP2019054061A (ja) | 2017-09-13 | 2017-09-13 | 半導体製造装置およびウェハ保持方法 |
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JP (1) | JP2019054061A (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04359539A (ja) * | 1991-06-06 | 1992-12-11 | Fujitsu Ltd | 静電吸着装置 |
JP2000021869A (ja) * | 1998-06-30 | 2000-01-21 | Tokyo Electron Ltd | 真空処理装置 |
JP2002141332A (ja) * | 2000-10-30 | 2002-05-17 | Hitachi Ltd | 半導体製造装置 |
WO2010041409A1 (ja) * | 2008-10-07 | 2010-04-15 | 株式会社アルバック | 基板管理方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07283296A (ja) | 1994-04-04 | 1995-10-27 | Hitachi Ltd | 静電吸着装置 |
JPH10270535A (ja) * | 1997-03-25 | 1998-10-09 | Nikon Corp | 移動ステージ装置、及び該ステージ装置を用いた回路デバイス製造方法 |
JP2005136025A (ja) * | 2003-10-29 | 2005-05-26 | Trecenti Technologies Inc | 半導体製造装置、半導体装置の製造方法及びウエハステージ |
-
2017
- 2017-09-13 JP JP2017176076A patent/JP2019054061A/ja active Pending
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2018
- 2018-02-27 US US15/907,133 patent/US10438830B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04359539A (ja) * | 1991-06-06 | 1992-12-11 | Fujitsu Ltd | 静電吸着装置 |
JP2000021869A (ja) * | 1998-06-30 | 2000-01-21 | Tokyo Electron Ltd | 真空処理装置 |
JP2002141332A (ja) * | 2000-10-30 | 2002-05-17 | Hitachi Ltd | 半導体製造装置 |
WO2010041409A1 (ja) * | 2008-10-07 | 2010-04-15 | 株式会社アルバック | 基板管理方法 |
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US20190080950A1 (en) | 2019-03-14 |
US10438830B2 (en) | 2019-10-08 |
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