KR20010032940A - 스토리지 용량을 가지는 박막 트랜지스터로부터매트릭스의 제조 방법 - Google Patents
스토리지 용량을 가지는 박막 트랜지스터로부터매트릭스의 제조 방법 Download PDFInfo
- Publication number
- KR20010032940A KR20010032940A KR1020007006284A KR20007006284A KR20010032940A KR 20010032940 A KR20010032940 A KR 20010032940A KR 1020007006284 A KR1020007006284 A KR 1020007006284A KR 20007006284 A KR20007006284 A KR 20007006284A KR 20010032940 A KR20010032940 A KR 20010032940A
- Authority
- KR
- South Korea
- Prior art keywords
- matrix
- gate
- semiconductor
- thin film
- polymer
- Prior art date
Links
- 239000011159 matrix material Substances 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000010409 thin film Substances 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000000463 material Substances 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims description 18
- 229920000642 polymer Polymers 0.000 claims description 12
- 229920001940 conductive polymer Polymers 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 4
- 239000012780 transparent material Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000004973 liquid crystal related substance Substances 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 230000009849 deactivation Effects 0.000 claims 3
- 238000005530 etching Methods 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 241001239379 Calophysus macropterus Species 0.000 description 2
- 229910016024 MoTa Inorganic materials 0.000 description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133357—Planarisation layers
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19754784A DE19754784B4 (de) | 1997-12-10 | 1997-12-10 | Verfahren zur Herstellung einer Matrix aus Dünnschichttransistoren mit Speicherkapazitäten |
| DE19754784.2 | 1997-12-10 | ||
| PCT/EP1998/007361 WO1999030352A2 (de) | 1997-12-10 | 1998-11-17 | Verfahren zur herstellung einer matrix aus dünnschichttransistoren mit speicherkapazitäten |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20010032940A true KR20010032940A (ko) | 2001-04-25 |
Family
ID=7851371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020007006284A KR20010032940A (ko) | 1997-12-10 | 1998-11-17 | 스토리지 용량을 가지는 박막 트랜지스터로부터매트릭스의 제조 방법 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1038320A2 (de) |
| JP (1) | JP2001526412A (de) |
| KR (1) | KR20010032940A (de) |
| DE (1) | DE19754784B4 (de) |
| TW (1) | TW432707B (de) |
| WO (1) | WO1999030352A2 (de) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100485625B1 (ko) * | 2001-12-20 | 2005-04-27 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 및 그 제조방법 |
| KR101023292B1 (ko) * | 2003-10-28 | 2011-03-18 | 엘지디스플레이 주식회사 | 액정표시장치 제조방법 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19933843B4 (de) * | 1999-07-20 | 2005-02-17 | Robert Bosch Gmbh | Eine Schicht, die elektrisch leitfähiges, transparentes Material enthält, ein Verfahren zur Herstellung einer solchen Schicht und deren Verwendung |
| CN103700673B (zh) * | 2013-12-24 | 2017-07-04 | 京东方科技集团股份有限公司 | 一种显示装置、阵列基板及其制作方法 |
| US11676855B2 (en) * | 2020-02-26 | 2023-06-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Patterning interconnects and other structures by photo-sensitizing method |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61292183A (ja) * | 1985-05-25 | 1986-12-22 | 旭硝子株式会社 | エレクトロクロミツク表示素子 |
| DE4310640C1 (de) * | 1993-03-31 | 1994-05-11 | Lueder Ernst | Verfahren zur Herstellung einer Matrix aus a-Si:H-Dünnschichttransistoren |
| ATE287929T1 (de) * | 1994-05-06 | 2005-02-15 | Bayer Ag | Leitfähige beschichtungen hergestellt aus mischungen enthaltend polythiophen und lösemittel |
| KR970011972A (ko) * | 1995-08-11 | 1997-03-29 | 쯔지 하루오 | 투과형 액정 표시 장치 및 그 제조 방법 |
| JPH0990421A (ja) * | 1995-09-27 | 1997-04-04 | Sharp Corp | 液晶表示装置およびその製造方法 |
| DE69633523T2 (de) * | 1995-11-22 | 2006-02-16 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy Naval Research Laboratory | Leitende gemusterte polymeroberfläche, verfahren zu ihrer herstellung und diese enthaltende anordnungen |
-
1997
- 1997-12-10 DE DE19754784A patent/DE19754784B4/de not_active Expired - Fee Related
-
1998
- 1998-11-17 JP JP2000524811A patent/JP2001526412A/ja active Pending
- 1998-11-17 EP EP98966240A patent/EP1038320A2/de not_active Ceased
- 1998-11-17 KR KR1020007006284A patent/KR20010032940A/ko not_active Application Discontinuation
- 1998-11-17 WO PCT/EP1998/007361 patent/WO1999030352A2/de not_active Application Discontinuation
- 1998-12-07 TW TW087120245A patent/TW432707B/zh active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100485625B1 (ko) * | 2001-12-20 | 2005-04-27 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 및 그 제조방법 |
| KR101023292B1 (ko) * | 2003-10-28 | 2011-03-18 | 엘지디스플레이 주식회사 | 액정표시장치 제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW432707B (en) | 2001-05-01 |
| WO1999030352A2 (de) | 1999-06-17 |
| JP2001526412A (ja) | 2001-12-18 |
| DE19754784A1 (de) | 1999-06-24 |
| EP1038320A2 (de) | 2000-09-27 |
| DE19754784B4 (de) | 2004-02-12 |
| WO1999030352A3 (de) | 1999-12-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E601 | Decision to refuse application |