JP2001526412A - 記憶コンデンサを伴う薄膜トランジスタからなるマトリクスの製法 - Google Patents
記憶コンデンサを伴う薄膜トランジスタからなるマトリクスの製法Info
- Publication number
- JP2001526412A JP2001526412A JP2000524811A JP2000524811A JP2001526412A JP 2001526412 A JP2001526412 A JP 2001526412A JP 2000524811 A JP2000524811 A JP 2000524811A JP 2000524811 A JP2000524811 A JP 2000524811A JP 2001526412 A JP2001526412 A JP 2001526412A
- Authority
- JP
- Japan
- Prior art keywords
- applying
- matrix
- layer
- thin
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000003860 storage Methods 0.000 title claims abstract description 15
- 239000011159 matrix material Substances 0.000 title claims abstract description 14
- 239000010409 thin film Substances 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 9
- 238000002161 passivation Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims description 17
- 229920000642 polymer Polymers 0.000 claims description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 229920001940 conductive polymer Polymers 0.000 claims description 5
- 239000012780 transparent material Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000009467 reduction Effects 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 241001239379 Calophysus macropterus Species 0.000 description 1
- 229910016024 MoTa Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133357—Planarisation layers
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19754784.2 | 1997-12-10 | ||
| DE19754784A DE19754784B4 (de) | 1997-12-10 | 1997-12-10 | Verfahren zur Herstellung einer Matrix aus Dünnschichttransistoren mit Speicherkapazitäten |
| PCT/EP1998/007361 WO1999030352A2 (de) | 1997-12-10 | 1998-11-17 | Verfahren zur herstellung einer matrix aus dünnschichttransistoren mit speicherkapazitäten |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001526412A true JP2001526412A (ja) | 2001-12-18 |
Family
ID=7851371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000524811A Pending JP2001526412A (ja) | 1997-12-10 | 1998-11-17 | 記憶コンデンサを伴う薄膜トランジスタからなるマトリクスの製法 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1038320A2 (de) |
| JP (1) | JP2001526412A (de) |
| KR (1) | KR20010032940A (de) |
| DE (1) | DE19754784B4 (de) |
| TW (1) | TW432707B (de) |
| WO (1) | WO1999030352A2 (de) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19933843B4 (de) * | 1999-07-20 | 2005-02-17 | Robert Bosch Gmbh | Eine Schicht, die elektrisch leitfähiges, transparentes Material enthält, ein Verfahren zur Herstellung einer solchen Schicht und deren Verwendung |
| KR100485625B1 (ko) * | 2001-12-20 | 2005-04-27 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 및 그 제조방법 |
| KR101023292B1 (ko) * | 2003-10-28 | 2011-03-18 | 엘지디스플레이 주식회사 | 액정표시장치 제조방법 |
| CN103700673B (zh) * | 2013-12-24 | 2017-07-04 | 京东方科技集团股份有限公司 | 一种显示装置、阵列基板及其制作方法 |
| US11676855B2 (en) * | 2020-02-26 | 2023-06-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Patterning interconnects and other structures by photo-sensitizing method |
| DE102020130905A1 (de) | 2020-02-26 | 2021-08-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Strukturieren von Interconnects und anderer Aufbauten durch Photosensibilisierungsverfahren |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61292183A (ja) * | 1985-05-25 | 1986-12-22 | 旭硝子株式会社 | エレクトロクロミツク表示素子 |
| DE4310640C1 (de) * | 1993-03-31 | 1994-05-11 | Lueder Ernst | Verfahren zur Herstellung einer Matrix aus a-Si:H-Dünnschichttransistoren |
| ATE228545T1 (de) * | 1994-05-06 | 2002-12-15 | Bayer Ag | Leitfähige beschichtungen |
| KR970011972A (ko) * | 1995-08-11 | 1997-03-29 | 쯔지 하루오 | 투과형 액정 표시 장치 및 그 제조 방법 |
| JPH0990421A (ja) * | 1995-09-27 | 1997-04-04 | Sharp Corp | 液晶表示装置およびその製造方法 |
| EP1007349B1 (de) * | 1995-11-22 | 2004-09-29 | THE GOVERNMENT OF THE UNITED STATES OF AMERICA, as represented by THE SECRETARY OF THE NAVY | Leitende gemusterte polymeroberfläche, verfahren zu ihrer herstellung und diese enthaltende anordnungen |
-
1997
- 1997-12-10 DE DE19754784A patent/DE19754784B4/de not_active Expired - Fee Related
-
1998
- 1998-11-17 WO PCT/EP1998/007361 patent/WO1999030352A2/de not_active Application Discontinuation
- 1998-11-17 EP EP98966240A patent/EP1038320A2/de not_active Ceased
- 1998-11-17 JP JP2000524811A patent/JP2001526412A/ja active Pending
- 1998-11-17 KR KR1020007006284A patent/KR20010032940A/ko not_active Application Discontinuation
- 1998-12-07 TW TW087120245A patent/TW432707B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO1999030352A3 (de) | 1999-12-09 |
| DE19754784A1 (de) | 1999-06-24 |
| TW432707B (en) | 2001-05-01 |
| KR20010032940A (ko) | 2001-04-25 |
| WO1999030352A2 (de) | 1999-06-17 |
| EP1038320A2 (de) | 2000-09-27 |
| DE19754784B4 (de) | 2004-02-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7907226B2 (en) | Method of fabricating an array substrate for liquid crystal display device | |
| US7531372B2 (en) | Method for manufacturing array substrate for liquid crystal display device | |
| KR100598737B1 (ko) | 박막 트랜지스터 어레이 기판 및 그 제조 방법 | |
| KR101130202B1 (ko) | Ｔｆｔ?ｌｃｄ 어레이 기판 및 그 제조 방법 | |
| JP3856889B2 (ja) | 反射型表示装置および電子デバイス | |
| US9373701B2 (en) | Method for fabricating array substrate | |
| JPH0242761A (ja) | アクティブマトリクス基板の製造方法 | |
| KR100844392B1 (ko) | 박막 트랜지스터와 이의 제조 방법 | |
| TW569466B (en) | Method of manufacturing thin film transistor, and thin film transistor and liquid crystal display panel manufactured using such method | |
| JPH1039297A (ja) | 反射型液晶表示装置及びその製造方法 | |
| KR100487899B1 (ko) | 반투과형 액정표시장치 및 그 제조방법 | |
| JP2003517641A (ja) | アクティブマトリクスデバイスの製造方法 | |
| JP2002098995A (ja) | 液晶用マトリクス基板の製造方法 | |
| JP2000214481A (ja) | 液晶表示装置およびその製造方法 | |
| US7456910B2 (en) | Liquid crystal display device and fabricating method thereof | |
| JP2001526412A (ja) | 記憶コンデンサを伴う薄膜トランジスタからなるマトリクスの製法 | |
| JP2002250934A (ja) | 液晶用マトリクス基板の製造方法 | |
| US8421096B2 (en) | Pixel structure and display panel | |
| US5597747A (en) | Method of making inverted thin film transistor using backsick exposure and negative photoresist | |
| JP2002350897A (ja) | 液晶用マトリクス基板の製造方法 | |
| KR100219500B1 (ko) | 박막트랜지스터-액정표시장치의 제조방법 | |
| KR19990046897A (ko) | 박막 트랜지스터 및 그의 제조방법 | |
| KR20050105422A (ko) | 액정표시패널 및 그 제조 방법 | |
| US20050094049A1 (en) | Liquid crystal display device and fabrication method thereof | |
| KR100205867B1 (ko) | 액티브매트릭스기판의 제조방법 및 그 방법에 의해제조되는액티브매트릭스기판 |