TW432707B - Fabrication method for producing a matrix from thin-film transistors with storage capacities - Google Patents
Fabrication method for producing a matrix from thin-film transistors with storage capacities Download PDFInfo
- Publication number
- TW432707B TW432707B TW087120245A TW87120245A TW432707B TW 432707 B TW432707 B TW 432707B TW 087120245 A TW087120245 A TW 087120245A TW 87120245 A TW87120245 A TW 87120245A TW 432707 B TW432707 B TW 432707B
- Authority
- TW
- Taiwan
- Prior art keywords
- scope
- patent application
- matrix
- item
- layer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000011159 matrix material Substances 0.000 title claims abstract description 13
- 239000010409 thin film Substances 0.000 title claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 7
- 239000004973 liquid crystal related substance Substances 0.000 claims abstract description 6
- 239000004065 semiconductor Substances 0.000 claims description 15
- 229920000642 polymer Polymers 0.000 claims description 11
- 239000003990 capacitor Substances 0.000 claims description 10
- 239000012212 insulator Substances 0.000 claims description 7
- 229920001940 conductive polymer Polymers 0.000 claims description 6
- 229910004205 SiNX Inorganic materials 0.000 claims description 5
- 238000011049 filling Methods 0.000 claims description 5
- 238000002161 passivation Methods 0.000 claims description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000002079 cooperative effect Effects 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- 239000008186 active pharmaceutical agent Substances 0.000 claims 1
- 239000002184 metal Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 241001239379 Calophysus macropterus Species 0.000 description 1
- 229910016024 MoTa Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133357—Planarisation layers
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Mathematical Physics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Description
經濟部中央標準局員工消费合作社印繁 A7 B7 五、發明説明（/ ) 〔發明的背景〕 本發明關於申請專利範圍獨立項的一種由薄膜電晶體 構成之具有記憶體能力記憶電容的矩陣(特別是供液晶螢幕 用者)的製造方法。 在德專利43 10 640 C1及DE 43 39 721 A1各發表了由 薄膜電晶體構成之具有記憶電容而供液晶螢幕用的矩陣的 製造方法，其中，係將所需光刻蝕遮罩步驟數目減至三或 四而降低製造成本。在此習知方法，係用a-Si : Η做薄膜 電晶體用的半導體》然而在此方法中，並不能將其他程序 步驟-如刻蝕’施覆及淸洗-省却以減少薄膜電晶體矩陣的 製造成本。 〔本發明的優點〕 與此習知相較，具有申請專利範圍獨立項特徵點的本 發明的方法的優點爲：所需之施覆及刻蝕步驟及除去感漆 的步驟較少。 要達成此點，係各使用了光構造化(photo-structurable) 的材料以將矩陣鈍化(被動化、無效化)(Passivierung)及製造 影像點電極。與習知方法不同者，在習知方法用SiNx做鈍 化，且一般用IT0做影像點，而依本發明這種方式，可各 省却一道施覆步驟(亦即SiNx的PECVD程序以及IT0的噴 濺作業），各一道刻蝕步驟(亦即SiNx的乾刻蝕與ΓΤ0的濕 刻蝕），及一道感光漆遮罩的洗掉步驟及其相關設備。 利用申請專利範圍附屬項中的措施，可將獨立項中的 方法做有利的進一步發展及改良。 {請先閲讀背面之注意夢項再填巧本頁) 丁 -* 線 本紙張尺度適用中國國家標準（CNS ) A4規格（210X29?公釐） A7 B7 ^32/0?_ 五、發明説明（>) 因此特別有利的是用聚合物當作可光構造化的材料’ 在此可使用一種光敏性且透明，高絕緣的聚合物做鈍化作 用，並用一種導電聚合物以製造影像光點電極。 此外，將此導電聚合物作機械式摩擦處理’可使液晶 定方位，因此可完全省却一道附加之定方位層(例如聚醯胺 )的施覆作業。 〔圖式之說明〕 第一圖中(a)〜(e)顯示本發明方法中五個階段。 〔圖號說明〕 (10) 玻璃基質 (11) 鍍金屬層 (12) 閘極絕緣物(介電質） (13) 半導體 (14) 半導體 (15) 導電層(蓋鍍金屬層） (16) 透明絕緣材料(純化層) (17) 光敏透明材料 (D) 流極接點 (S) 源極接點 (C) 記憶電容器 在一種較佳的製造方法中’個別步驟如下： -將第一導電層施覆及構造化，當作該薄膜電晶體矩 陣的列，當作電晶體的閘極接點，以及當作記憶電容的電 極， ---------^------ir-------線. t #先聞讀背面之注意#項-Λ·填本頁) 經濟部中央標準局負工消費合作社印製 本紙張尺度適用中固國家橾車（CNS >A4規格（2丨〇>< 297公® ) • · / » · * · I"Ί A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（>) 一施覆一種閘極絕緣物(12彡， -施覆-種雜自pUg醜n_的半導體當作該電晶 體的流極(漏極)與源極接表， -將另-導電層施覆及_化，以作賴膜電晶體矩 陣的行’及該流極與源極接點，以及記憶電容的對立電極 -將該慘雜成Ρ或Ν的半導體及未摻雜的半導體層 (13)構造化， -將-光敏之觀腿材料麵，感光並顯影， -將一導電之光敏透明材料施覆並感光。 最好在此用a-Si : Η做半導體及用SiNx做閘極絕緣物 〇 由於程序步驟數目銳減，故成本可大大節省，同時提 高產率。 〔圖式說明〕 本發明一實施例示於圖式中並在以下說明中詳述。圖 式中： 第一圖的⑷〜⑹係在各種不同製造階段經一液晶螢幕 的一影像點的橫剖面圖β 在第一圖中的(a)所示的製造階段，把一第一鍍金屬層 (11)(例如200nm的MoTa)噴濺到一玻璃基質(10)上，並構成 化成線路及記憶電容器線路。然後施覆以下順序的層：一 層蘭極絕緣物(2)，例如350nm的SiNx —層固有(intrinsic) 半導體（13)，例如150nm的i-a-Si :以及一層高量摻雜的半 一 5 ----------1------訂--II---丨線 (請先閱讀背面之注意爭項再填荈本頁) 本紙張尺度適用_國國家橾準（<：奶）六4規格（210/297公釐） 45270? A7 B7 五、發明説明（γ) 導體，例如50nm的n+-a-Si :以及一層蓋鍍金屬層，例如 200nm 的 Mo。 第一圖(b)顯示在蓋鍍金屬層(15)與摻雜的半導體層(14) 刻蝕後的構造，當作行線路，流極/源極接點(D)(S)，以及 記億電容器(C)的蓋電極。 在第一圖(c)的程序階段中顯示出半導體層（13)與閘極 介電質（12)在單一道電漿刻蝕步驟中製造，以得影像點的 個別薄膜電晶體分離，並將閘極線路與記憶電容器線路的 端子區域釋放。 在第一圖(d)中，把一層光敏透明且高絕緣的聚合物到 此構造上，並曝光、顯影及回火。所用聚合物的例子的如 所的Photo-BCB»此聚合的目的在於將該構造鈍化及平坦 化。記憶電容器(C)的蓋電極（它在此處同時表示薄膜電晶 體的流極接點)以及行·及列線路的端子區域在曝光及顯影 時其聚合物層再除去。 然後依第一圖(e)，將一層導電光敏之透明聚合物（17) ，上去。爲此，舉例而言，可用拜耳公司的一種名稱 PEDT/PSS的聚合物，利用紫外光透過一光罩將影像點電極 之間的區域曝光，使該導電聚合物變成一絕緣層。此聚合 物的絕緣區域在第一圖⑷中用點表示。如果使用一種光敏 導電聚合物，則影像點電極之間的區域也可利用一種顯像 物步驟除去。因此個別之影像點電極有效地互相分開或成 互不導電。影像點電極之未曝光區域在該聚合物PEDT/PSS 在純130t作回火步驟後。其一種依面積而定之層電阻爲 ________—_6 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210 X 297公釐） '~~~ --------„--K------訂-------線 (請先閲讀背面之注意事項再填苑本頁) 經濟部中央樣準局貝工消費合作社印裝 :r) ； A7 B7 五、發明説明（(） 200-1000歐姆，而在可見光頻域的透明度>70%(對於900nm 的乾燥層厚度）。將乾燥層厚度減少可提高穿透度。然後’ 此層(7)可用機械方式硏磨，因而它可造成液晶的方向性。 如此可以不必施覆一層附加方向層。 閘極·介電質（12)的構造化作業一如圖示·可以隨該未慘 雜之半導體（13)的構造化作業或隨鈍化層（16)作業在一道附 加的電漿刻蝕程序中進行，當作遮罩。 (請先閱讀背面之注意爭項再填转本f ) 訂 線 經濟部中央樣準局員工消費合作社印繁 本•中國 s )A4規格（210X297公釐）
Claims (1)
- B8 C8 DS 4327C7 六、申請專利範圍 1 _ 一種薄膜電晶體構成具有記憶體電容(c)的矩陣的 製造方法•它特別是供液晶螢幕用者，其特徵在： 各使用可光構造化的材料(16)(17)以將矩陣鈍化及製造 影像點電極。 2 *如申請專利範圍第1項之方法，其中： 使用聚合物當作可光構造化的材料（16)(17)。 3 ·如申請專利範圍第2項之方法，其中： 使用一種光敏透明高絕緣之聚合物（16)作鈍化，並使 用一種導電聚合物(Π)製造影像點電極。 4 ·如申請專利範圍第3項之方法，其中： 將該導電聚合物(17)作機械摩擦處理使液晶定方向。 5 _如申請專利範圍第1或第2項之方法，其中： -將第一導電層（10)施覆及構造化，當作該薄膜電晶 體矩陣的列，當作電晶體的閘極接點(G)，以及當作記憶電 容(C)的電極， —施覆一種閘極絕緣物（12)， -施覆一種摻雜成Ρ-或摻雜成Ν-的半導體(14)當作該 電晶體的流極(漏極)與源極接點(D)(S)， -將另一導電層（15)施覆及構造化，以作該薄膜電晶 體矩陣的行·及該流極與源極接點(D)(S)，以及記憶電容 (C)的對立電極， -將該摻雜成P或N的半導體(14)及未摻雜的半導體 層(13)構造化， -將一光敏之透明絕緣材料(16)施覆，感光並顯影， (請先閲讀背面之注意事項再填寫本頁) 訂 線！ 經濟部中央標窣局男工消費合作社印製 本紙張尺度通用中國®家標率（CNS) A4洗格（2tOX25»7公釐） Λ8 B8 C8 m 六、申請專利範圍 一將一導電之光敏透明材料（17)施覆並感光。 6 ·如申請專利範圍第5項之方法，其中： 使用a-Si : Η做半導體，使用SiNx做閘極絕緣物。 7 ·如申請專利範圍第5項之方法，其中： 該閘極絕緣物（12)隨該可光構造化的鈍化層（16)在一道 分別的步驟構造化，當作遮罩。 (請先閱讀背面之注意事項再填寫本頁) 線！ 經濟部中央揉準局負工消費合作社印製 本紙張尺度適用t國國家揉準（CNS ) A4規格（210 X 297公釐）
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19754784A DE19754784B4 (de) | 1997-12-10 | 1997-12-10 | Verfahren zur Herstellung einer Matrix aus Dünnschichttransistoren mit Speicherkapazitäten |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW432707B true TW432707B (en) | 2001-05-01 |
Family
ID=7851371
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087120245A TW432707B (en) | 1997-12-10 | 1998-12-07 | Fabrication method for producing a matrix from thin-film transistors with storage capacities |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1038320A2 (zh) |
| JP (1) | JP2001526412A (zh) |
| KR (1) | KR20010032940A (zh) |
| DE (1) | DE19754784B4 (zh) |
| TW (1) | TW432707B (zh) |
| WO (1) | WO1999030352A2 (zh) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103700673A (zh) * | 2013-12-24 | 2014-04-02 | 京东方科技集团股份有限公司 | 一种显示装置、阵列基板及其制作方法 |
| CN113161288A (zh) * | 2020-02-26 | 2021-07-23 | 台湾积体电路制造股份有限公司 | 通过光敏化方法图案化互连和其他结构 |
| TWI762201B (zh) * | 2020-02-26 | 2022-04-21 | 台灣積體電路製造股份有限公司 | 互連部件及其形成方法 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19933843B4 (de) * | 1999-07-20 | 2005-02-17 | Robert Bosch Gmbh | Eine Schicht, die elektrisch leitfähiges, transparentes Material enthält, ein Verfahren zur Herstellung einer solchen Schicht und deren Verwendung |
| KR100485625B1 (ko) * | 2001-12-20 | 2005-04-27 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 및 그 제조방법 |
| KR101023292B1 (ko) * | 2003-10-28 | 2011-03-18 | 엘지디스플레이 주식회사 | 액정표시장치 제조방법 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61292183A (ja) * | 1985-05-25 | 1986-12-22 | 旭硝子株式会社 | エレクトロクロミツク表示素子 |
| DE4310640C1 (de) * | 1993-03-31 | 1994-05-11 | Lueder Ernst | Verfahren zur Herstellung einer Matrix aus a-Si:H-Dünnschichttransistoren |
| EP0686662B2 (de) * | 1994-05-06 | 2006-05-24 | Bayer Ag | Leitfähige Beschichtungen |
| KR970011972A (ko) * | 1995-08-11 | 1997-03-29 | 쯔지 하루오 | 투과형 액정 표시 장치 및 그 제조 방법 |
| JPH0990421A (ja) * | 1995-09-27 | 1997-04-04 | Sharp Corp | 液晶表示装置およびその製造方法 |
| WO1997018944A1 (en) * | 1995-11-22 | 1997-05-29 | The Government Of The United States Of America, Represented By The Secretary Of The Navy | Patterned conducting polymer surfaces and process for preparing the same and devices containing the same |
-
1997
- 1997-12-10 DE DE19754784A patent/DE19754784B4/de not_active Expired - Fee Related
-
1998
- 1998-11-17 WO PCT/EP1998/007361 patent/WO1999030352A2/de not_active Application Discontinuation
- 1998-11-17 EP EP98966240A patent/EP1038320A2/de not_active Ceased
- 1998-11-17 KR KR1020007006284A patent/KR20010032940A/ko not_active Application Discontinuation
- 1998-11-17 JP JP2000524811A patent/JP2001526412A/ja active Pending
- 1998-12-07 TW TW087120245A patent/TW432707B/zh active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103700673A (zh) * | 2013-12-24 | 2014-04-02 | 京东方科技集团股份有限公司 | 一种显示装置、阵列基板及其制作方法 |
| CN113161288A (zh) * | 2020-02-26 | 2021-07-23 | 台湾积体电路制造股份有限公司 | 通过光敏化方法图案化互连和其他结构 |
| TWI762201B (zh) * | 2020-02-26 | 2022-04-21 | 台灣積體電路製造股份有限公司 | 互連部件及其形成方法 |
| US11676855B2 (en) | 2020-02-26 | 2023-06-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Patterning interconnects and other structures by photo-sensitizing method |
| US12033890B2 (en) | 2020-02-26 | 2024-07-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Patterning interconnects and other structures by photo-sensitizing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2001526412A (ja) | 2001-12-18 |
| EP1038320A2 (de) | 2000-09-27 |
| DE19754784B4 (de) | 2004-02-12 |
| WO1999030352A2 (de) | 1999-06-17 |
| KR20010032940A (ko) | 2001-04-25 |
| DE19754784A1 (de) | 1999-06-24 |
| WO1999030352A3 (de) | 1999-12-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7141180B2 (en) | Etchant for wire, method of manufacturing wire using etchant, thin film transistor array panel including wire and manufacturing method thereof | |
| US6204081B1 (en) | Method for manufacturing a substrate of a liquid crystal display device | |
| KR100314201B1 (ko) | 박막트랜지스터형액정표시장치및그제조방법 | |
| TW594356B (en) | Liquid crystal display device, wiring substrate, and methods for fabricating the same | |
| JPH04163528A (ja) | アクティブマトリクス表示装置 | |
| JPH0468318A (ja) | アクティブマトリクス基板 | |
| US9040230B2 (en) | Resist ink and method of forming pattern using the same | |
| US6236062B1 (en) | Liquid crystal display and thin film transistor with capacitive electrode structure | |
| JPH09244055A (ja) | 液晶表示装置 | |
| TW432707B (en) | Fabrication method for producing a matrix from thin-film transistors with storage capacities | |
| US6392720B1 (en) | Substrate structure of a liquid crystal display and a manufacturing method thereof | |
| US7977250B2 (en) | Stripper solution and method of manufacturing liquid crystal display using the same | |
| TW531794B (en) | Thin film transistor, method for manufacturing the same and display device including the same | |
| TW200832719A (en) | Array substrae, display device, and method for manufacturing the array substrate | |
| US5893731A (en) | Method for fabricating low cost integrated resistor capacitor combinations | |
| JPH1082997A (ja) | アクティブマトリクス液晶表示装置の製造方法及びアクティブマトリクス液晶表示装置 | |
| US20030117539A1 (en) | Copper alloy, array substrate of liquid crystal display using the same and method of fabricating the same | |
| US6940565B2 (en) | Liquid crystal display device and fabricating method thereof | |
| JPH0334045B2 (zh) | ||
| KR100471396B1 (ko) | 박막트랜지스터 액정표시장치의 제조방법 | |
| TW550418B (en) | Active matrix substrate and method of forming a contact hole in the same, and a LCD using such substrate | |
| KR980003738A (ko) | 액정표시장치의 스토리지 캐패시터와 그 제조방법 | |
| JP3830774B2 (ja) | 反射型液晶表示装置及び携帯端末機器 | |
| JP3151209B2 (ja) | マトリクス型表示装置の製造方法 | |
| KR100741535B1 (ko) | 액정표시장치 및 그 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent |